Vishay Si1300BDL Schematic

Si1300BDL

20

335

PRODUCT SUMMARY

V

(V)

DS

r

(W)

DS(on)

0.85 at VGS = 4.5 V 0.4

1.08 at VGS = 2.5 V 0.35

SC-70 (3-LEADS)

G

1

S

2

New Product

N-Channel 20-V (D-S) MOSFET

FEATURES

 TrenchFET Power MOSFET

a

I

(A)

D

3

D

Qg (Typ)

Marking Code

KE XX

 100 % R

YY

Lot Traceability and Date Code

Part # Code

Tested

g

Vishay Siliconix

RoHS

COMPLIANT

D

G

Top View

Ordering Information: Si1300BDL–T1–E3

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

TC = 25 C

Continuous Drain Current (TJ = 150 C)

Pulsed Drain Current I

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

TC = 70 C

TA = 25 C

TA = 70 C

TC = 25 C

TA = 25 C

TC = 25 C

TC = 70 C

TA = 25 C

TA = 70 C

DM

P

DS

GS

I

D

I

S

D

stg

20

"8

0.4

0.32

b, c

0.37

b, c

0.30

0.5

0.18

b, c

0.14

0.2

0.14

0.19

b, c

0.12

–55 to 150

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

b, d

t p 5 sec

R

thJA

thJF

540 670

450 570

S

V

A

W

C



C/W

Notes: a. Based on T b. Surface mounted on 1” x 1” FR4 board. c. t = 5 sec d. Maximum under steady state conditions is 360 C/W.

Document Number: 73557 S–52388—Rev. A, 21–Nov–05

= 25 C.

C

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Si1300BDL

Drain-S

a

W

p

V

DD

R

L

W

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25 C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

VDS Temperature Coefficient

V

Temperature Coefficient

GS(th)

DVDS/T

DV

GS(th)/TJ

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

-

ource On-State Resistance

Dynamic

b

a

-

a

I

r

DS(on)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

DS

GS(th)

GSS

DSS

D(on)

iss

oss

rss

g

gs

gd

g

d(on)

r

d(off)

f

VGS = 0 V, I

J

VDS = VGS, I

VDS = 0 V, VGS = "8 V "100

VDS = 20 V, VGS = 0 V 100 nA

VDS = 20 V, VGS = 0 V, TJ = 55 C

VDS w 5 V, VGS = 4.5 V

VDS w 5 V, VGS = 2.5 V

VGS = 4.5 V, ID = 0.25

VGS =2.5 V, ID = 0.15 0.85 1.08

V

= 10 V, VGS = 0 V, f = 1 MHz 13

DS

V

= 10 V, VGS = 4.5 V, ID = 0.4 560 840

DS

V

= 10 V, VGS = 2.5 V, ID= 0.35 98

DS

VDD = 10 V, RL = 25 W

ID ^ 0.4 A, V

= 250 mA

D

I

= 250 mA

D

= 250 mA

D

f = 1 MHz 7 12

= 10 V,

= 25

= 4.5 V, Rg = 1 W

GEN

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulse Diode Forward Current

a

Body Diode Voltage V

S

I

SM

SD

Notes a. Pulse test; pulse width v b. Guaranteed by design, not subject to production testing.

300 ms, duty cycle v 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TC = 25 C

I

= 0.05 A

S

20 V

20

–2.8

mV/C

0.4 1.0 V

5

0.4

0.12

0.65 0.85

35

4

335 503

85

7 12

10 15

8 13

7 12

0.18

0.4

0.7 1.2 V

nA

mA

A

pF

pC

W

ns

A

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Document Number: 73557

S–52388—Rev. A, 21–Nov–05

Si1300BDL

New Product

TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)

1.25

1.00

0.75

0.50

– Drain Current (A)I

D

0.25

0.00

0.0 0.5 1.0 1.5 2.0 2.5 3.0

2.0

Output Characteristics Transfer Characteristics curves vs. Temp

VGS = 10 V thru 2.5 V

VGS = 2.0 V

VGS = 1.5 V

VGS = 1.0 V

VDS – Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Vishay Siliconix

0.8

0.6

0.4

– Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5

50

TA = 25 C

TA = 125 C

TA = –55 C

VGS – Gate-to-Source Voltage (V)

Capacitance

W )

1.5

1.0

– On-Resistance (r

0.5

DS(on)

0.0

0.00 0.25 0.50 0.75 1.00 1.25

5

ID = 0.4 A

4

3

2

– Gate-to-Source Voltage (V)

GS

1

V

VGS = 2.5 V

VGS = 4.5 V

ID – Drain Current (A)

Qg–Gate Charge

VDS = 10 V

VDS = 16 V

40

30

20

C – Capacitance (pF)

10

0

0 4 8 12 16 20

On-Resistance vs. Junction Temperature

1.6

ID = 0.25 A

1.4

1.2

1.0

– On-Resistance

(Normalized)

DS(on)

r

0.8

C

iss

C

oss

C

rss

– Drain-Source Voltage (V)

V

DS

0

0 150 300 450 600

Qg – Total Gate Charge (nC)

Document Number: 73557 S–52388—Rev. A, 21–Nov–05

0.6 –50 –25 0 25 50 75 100 125 150

T

– Junction Temperature (C)

J

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Vishay Si1300BDL Schematic [ru]