Vishay Si1026X Schematic

N-Channel 60 V (D-S) MOSFET

Marking Code: E

To p View

3

1

D

2

G

2

S

1

52

4

6

D

1

S

2

G

1

SC-89

Ordering Information:

Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free)

Si1026X

Vishay Siliconix

PRODUCT SUMMARY

V

DS(min)

60

(V) R

1.40 at V

()V

DS(on)

= 10 V

GS

(V) ID (mA)

GS(th)

1 to 2.5 500

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• Low On-Resistance: 1.40 

• Low Threshold: 2 V (typ.)

• Low Input Capacitance: 30 pF

• Fast Switching Speed: 15 ns (typ.)

• Low Input and Output Leakage

• ESD Protected: 2000 V

• Miniature Package

• Compliant to RoHS Directive 2002/95/EC

BENEFITS

• Low Offset Voltage

• Low-Voltage Operation

• High-Speed Circuits

• Low Error Voltage

• Small Board Area

APPLICATIONS

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

• Battery Operated Systems

• Solid-State Relays

Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature.

Document Number: 71434 S10-2432-Rev. D, 25-Oct-10

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

b

Continuous Source Current (Diode Conduction)

a

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

TA = 25 °C

T

= 85 °C

A

T

= 25 °C

A

= 85 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

320 305

230 220

450 380

280 250

145 130

Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V

60

± 20

- 650

mA

mW

- 55 to 150 °C

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V

1

Si1026X

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

Total Gate Charge

Gate-Drain Charge

Input Capacitance

Reverse Transfer Capacitance

Switching

b, c

Tur n -O n T im e

Turn-Off Time

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

V

Q

C

t

(on)

t

(off)

DS

fs

SD

gs

gd

iss

oss

rss

V

DS

V

GS

g

V

DS

= 200 mA, V

I

D

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature.

= 0 V, ID = 10 µA

GS

V

= VGS, ID = 0.25 mA

DS

VDS = 0 V, VGS = ± 10 V

V

= 0 V, VGS = ± 5 V

DS

V

= 60 V, V

DS

= 60 V, V

V

GS

= 10 V, V

DS

= 7.5 V, V

DS

= 4.5 V, ID = 200 mA

GS

= 10 V, ID = 500 mA

GS

= 0 V

GS

= 0 V, TJ = 85 °C

= 4.5 V

GS

= 10 V

GS

= 10 V, ID = 500 mA, TJ = 125 °C

VDS = 10 V, ID = 200 mA

V

= 0 V, IS = 200 mA

GS

= 10 V, ID = 250 mA, V

= 25 V, V

V

DS

GS

= 0 V,

= 4.5 V

f = 1 MHz

V

= 30 V, RL = 150 

DD

= 10 V, Rg = 10 

GEN

60

1 2.5

± 150

± 50

1

V

nA

µA

10

500

800

mA

3.0

1.40



2.50

200 mS

1.40 V

600

120

pCGate-Source Charge

225

30

6

pFOutput Capacitance

3

15

20

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 71434

S10-2432-Rev. D, 25-Oct-10

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.0

0.2

0.4

0.6

0.8

1.0

012345

VDS- Drain-to-Source Voltage (V)

- Drain Current (A)I D

VGS = 10 V thru 7 V

3 V

5 V

4 V

6 V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0 200 400 600 800 1000

ID- Drain Current (mA)

VGS = 4.5 V

VGS = 10 V

- On-Resistance (Ω)R

DS(on)

0

1

2

3

4

5

6

7

0.0 0.1 0.2 0.3 0.4 0.5 0.6

VDS = 10 V I

D

= 250 mA

- Gate-to-Source Voltage (V)

Qg- Total Gate Charge (nC)

V

GS

0

300

600

900

1200

0123456

VGS- Gate-to-Source Voltage (V)

- Drain Current (mA)I

D

TJ = - 55 °C

125 °C

25 °C

0.0

0.4

0.8

1.2

1.6

2.0

- 50 - 25 0 25 50 75 100 125 150

TJ- J unction Temperature (°C)

VGS = 10 V at 500 mA

VGS = 4.5 V

at 200 mA

(Normalized)

- On-Resistance

R

DS(on)

Si1026X

Vishay Siliconix

Output Characteristics

On-Resistance vs. Drain Current

Transfer Characteristics

50

VGS= 0 V f = 1 MHz

40

30

C

iss

20

Capacitance (pF) C-

10

0

0 5 10 15 20 25

C

oss

C

rss

VDS- Drain-to-Source Voltage (V)

Capacitance

Document Number: 71434 S10-2432-Rev. D, 25-Oct-10

Gate Charge

On-Resistance vs. Junction Temperature

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Vishay Si1026X Schematic [ru]