VISHAY SFH690ABT, SFH690AT, SFH690BT, SFH690CT Technical data
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SFH690ABT/ AT/ BT/ CT
Vishay Semiconductors
Optocoupler, Phototransistor Output, SOP-4, Mini-Flat Package
Features
• SOP (Small Outline Package)
• Isolation Test Voltage, 3750 V
• High Collector-Emitter Breakdown Voltage,
V
= 70 V
CEO
• Low Saturation Voltage
• Fast Switching Times
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100 " (2.54 mm) Spacing
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
RMS
(1.0 s)
e3
Pb
Pb-free
Agency Approvals
• UL1577, File No. E52744 System Code U
• CSA 93751
• BSI IEC60950 IEC60065
The coupling devices are designed for signal transmission between two electrically separated circuits.
The SFH690 series is available only on tape and reel.
There are 2000 parts per reel. Marking for SFH690AT
is SFH690A; SFH690BT is SFH690B; SFH690CT is
SFH690C; SFH690ABT will be marked as SFH690A
Applications
or SFH690B.
High density mounting or space sensitive PCBs
PLCs
Telecommunication
Description
The SFH690ABT/ AT/ BT/ CT family has a GaAs
infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and
is incorporated in a 4-pin 100 mil lead pitch miniflat
package. It features a high current transfer ratio, low
Order Information
Part Remarks
SFH690ABT CTR 50 - 300 %, SMD-4
SFH690AT CTR 50 - 150 %, SMD-4
SFH690BT CTR 100 - 300 %, SMD-4
SFH690CT CTR 100 - 200 %, SMD-4
For additional information on the available options refer to
Option Information.
coupling capacitance, and high isolation voltage.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
DC Forward current I
Surge forward current t
Power dissipation P
Document Number 83686
Rev. 1.5, 20-Apr-04
≤ 10 µsI
p
F
FSM
diss
R
6.0 V
50 mA
2.5 A
80 mW
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SFH690ABT/ AT/ BT/ CT
Vishay Semiconductors
Output
Parameter Test condition Symbol Value Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector current I
t
≤ 1.0 ms I
p
Power dissipation P
CE
EC
C
C
diss
Coupler
Parameter Test condition Symbol Value Unit
Isolation test voltage between
emitter and detector (1.0 s)
Creepage ≥ 5.33 mm
Clearance ≥ 5.08 mm
Insulation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDEO 0303, part 1
Isolation resistance V
= 500 V, T
IO
V
= 500 V, T
IO
= 25 °C R
amb
= 100 °C R
amb
Storage temperature range T
Ambient temperature range T
Junction temperature T
Soldering temperature max. 10 s Dip soldering distance
to seating plane
≥1.5 mm
V
T
ISO
IO
IO
stg
amb
j
sld
70 V
7.0 V
50 mA
100 mA
150 mW
3750 V
≥ 0.4 mm
≥ 175
12
≥ 10
11
≥ 10
- 55 to + 150 °C
- 55 to + 100 °C
100 °C
260 °C
RMS
Ω
Ω
200
150
100
50
Diode
tot
P –Power Dissipation (mW)
0
0 25 50 75 100 125 150
T
– Ambient Temperature ( qC )
18484
amb
Phototransistor
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
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Document Number 83686
Rev. 1.5, 20-Apr-04
SFH690ABT/ AT/ BT/ CT
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Capacitance V
Thermal resistance R
= 5 mA V
F
= 6.0 V I
R
= 0.0 V, f = 1.0 MHz C
R
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter leakage
current
Collector-emitter capacitance V
Thermal resistance R
= 20 V I
V
CE
= 5.0 V, f = 1.0 MHz C
CE
F
R
O
thja
CEO
CE
thja
1.15 1.4 V
0.01 10 µA
14 pF
750 K/W
100 nA
2.8 pF
500 K/W
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter saturation
voltage
Coupling capacitance f = 1.0 MHz C
= 10 mA, IC = 2.0 mA V
I
F
CEsat
C
0.1 0.3 V
0.3 pF
Current Transfer Ratio
Parameter Tes t co n d it i o n Part Symbol Min Ty p. Max Unit
I
C/IF
IF = 5.0 mA, VCE = 5.0 V SFH690AT CTR 50 150 %
SFH690BT CTR 100 300 %
SFH690CT CTR 100 200 %
SFH690ABT CTR 50 300 %
Document Number 83686
Rev. 1.5, 20-Apr-04
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