VISHAY SFH640 User Manual
VISHAY
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SFH640
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection,
300 V BV
CEO
Features
• Good CTR Linearity with Forward Current
• Low CTR Degradation
• Very High Collector-emitter Breakdown Voltage,
BV
• Isolation Test Voltage: 5300 V
CER
= 300 V
RMS
• Low Coupling Capacitance
• High Common Mode Transient Immunity
• Phototransistor Optocoupler 6 Pin DIP Package
with Base Connection
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• CSA 93751
• BSI IEC60950 IEC60065
Description
The SFH 640 is an optocoupler with very high BV
a minimum of 300 V. It is intended for telecommunications applications or any DC application requiring a
high blocking voltage.
CER
Order Information
Part Remarks
SFH640-1 CTR 40 - 80 %, DIP-6
SFH640-2 CTR 63 - 125 %, DIP-6
SFH640-3 CTR 100 - 200 %, DIP-6
SFH640-2X007 CTR 63 - 125 %, SMD-6 (option 7)
SFH640-3X007 CTR 100 - 200 %, SMD-6 (option 7)
SFH640-3X009 CTR 100 - 200 %, SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
,
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
DC Forward current I
Surge forward current t
Total power dissipation P
Document Number 83682
Rev. 1.3, 20-Apr-04
≤ 10 µsI
p
R
F
FSM
diss
6.0 V
60 mA
2.5 A
100 mW
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SFH640
VISHAY
Vishay Semiconductors
Output
Parameter Test condition Symbol Value Unit
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Surge collector current t
≤ 1.0 ms I
p
Total power dissipation P
CE
CBO
EBO
C
FSM
diss
300 V
300 V
7.0 V
50 mA
100 mA
300 mW
Coupler
Parameter Test condition Symbol Value Unit
Isolation test voltage (between
V
ISO
emitter and detector, refer to
climate DIN 40046 part 2,
Nov. 74)
Isolation resistance VIO = 500 V, T
V
= 500 V, T
IO
= 25 °C R
amb
= 100 °C R
amb
IO
IO
Insulation thickness between
emitter and detector
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Storage temperature range T
Operating temperature range T
Junction temperature T
Soldering temperature max. 10 s, dip soldering:
T
stg
amb
j
sld
distance to seating plane
≥ 1.5 mm
5300/7500 V
12
≥ 10
11
≥ 10
RMS/VPK
≥ 0.4 mm
175
- 55 to + 150 °C
- 55 to + 100 °C
100 °C
260 °C
Ω
Ω
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse voltage I
Reverse current V
Capacitance V
= 10 mA V
F
= 10 µAV
R
= 6.0 V I
R
= 0 V, f = 1.0 MHz C
R
Thermal resistance R
R
thja
V
R
O
6.0 V
1.1 1.5 V
0.01 10 µA
25 pF
750 K/W
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter breakdown
voltage
Voltage emitter-base I
Collector-emitter capacitance V
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2
= 1.0 mA, RBE = 1.0 MΩ BV
I
CE
= 10 µABV
EB
= 10 V, f = 1.0 MHz C
CE
CER
BEO
CE
300 V
7.0 V
7.0 pF
Document Number 83682
Rev. 1.3, 20-Apr-04
VISHAY
Parameter Test condition Symbol Min Ty p . Max Unit
Collector - base capacitance VCB = 10 V, f = 1.0 MHz C
Emitter - base capacitance V
= 5.0 V, f = 1.0 MHz C
EB
Thermal resistance R
Coupler
Parameter Test condition Part Symbol Min Ty p . Max Unit
Coupling capacitance C
Saturation voltage, collectoremitter
Collector-emitter leakage
I
= 10 mA, IC = 2.0 mA SFH640-1 V
F
= 10 mA, IC = 3.2 mA SFH640-2 V
I
F
I
= 10 mA, IC = 5.0 mA SFH640-3 V
F
V
= 200 V, RBE = 1.0 MΩ I
CE
current
Current Transfer Ratio
Parameter Test condition Part Symbol Min Typ . Max Unit
Current Transfer Ratio I
= 10 mA, VCE = 10 V SFH640-1 IC/I
F
I
= 1.0 mA, VCE = 10 V SFH640-1 IC/I
F
I
= 10 mA, VCE = 10 V SFH640-2 IC/I
F
I
= 1.0 mA, VCE = 10 V SFH640-2 IC/I
F
I
= 10 mA, VCE = 10 V SFH640-3 IC/I
F
I
= 1.0 mA, VCE = 10 V SFH640-3 IC/I
F
CB
EB
thja
C
CEsat
CEsat
CEsat
CER
Vishay Semiconductors
8.0 pF
38 pF
250 K/W
0.6 pF
0.25 0.4 V
0.25 0.4 V
0.25 0.4 V
1.0 100 nA
40 80 %
F
13 30 %
F
63 125 %
F
22 45 %
F
100 200 %
F
34 70 %
F
SFH640
Document Number 83682
Rev. 1.3, 20-Apr-04
www.vishay.com
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