VISHAY SFH640 User Manual

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VISHAY

i179004i179004

SFH640

Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection, 300 V BV

CEO

Features

• Good CTR Linearity with Forward Current

• Low CTR Degradation

• Very High Collector-emitter Breakdown Voltage, BV

• Isolation Test Voltage: 5300 V

CER

= 300 V

RMS

• Low Coupling Capacitance

• High Common Mode Transient Immunity

• Phototransistor Optocoupler 6 Pin DIP Package with Base Connection

• Lead-free component

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E52744 System Code H or J, Double Protection

• DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1

• CSA 93751

• BSI IEC60950 IEC60065

Description

The SFH 640 is an optocoupler with very high BV a minimum of 300 V. It is intended for telecommunications applications or any DC application requiring a high blocking voltage.

CER

Order Information

Part Remarks

SFH640-1 CTR 40 - 80 %, DIP-6

SFH640-2 CTR 63 - 125 %, DIP-6

SFH640-3 CTR 100 - 200 %, DIP-6

SFH640-2X007 CTR 63 - 125 %, SMD-6 (option 7)

SFH640-3X007 CTR 100 - 200 %, SMD-6 (option 7)

SFH640-3X009 CTR 100 - 200 %, SMD-6 (option 9)

For additional information on the available options refer to Option Information.

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage V

DC Forward current I

Surge forward current t

Total power dissipation P

Document Number 83682

Rev. 1.3, 20-Apr-04

≤ 10 µsI

FSM

diss

6.0 V

60 mA

2.5 A

100 mW

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SFH640

VISHAY

Vishay Semiconductors

Output

Parameter Test condition Symbol Value Unit

Collector-emitter voltage V

Collector-base voltage V

Emitter-base voltage V

Collector current I

Surge collector current t

≤ 1.0 ms I

Total power dissipation P

CBO

EBO

FSM

diss

300 V

7.0 V

50 mA

100 mA

300 mW

Coupler

Parameter Test condition Symbol Value Unit

Isolation test voltage (between

ISO

emitter and detector, refer to climate DIN 40046 part 2, Nov. 74)

Isolation resistance VIO = 500 V, T

= 500 V, T

= 25 °C R

amb

= 100 °C R

amb

Insulation thickness between emitter and detector

Creepage ≥ 7.0 mm

Clearance ≥ 7.0 mm

Comparative tracking index per DIN IEC 112/VDE 0303, part 1

Storage temperature range T

Operating temperature range T

Junction temperature T

Soldering temperature max. 10 s, dip soldering:

stg

amb

sld

distance to seating plane ≥ 1.5 mm

5300/7500 V

≥ 10

RMS/VPK

≥ 0.4 mm

175

- 55 to + 150 °C

- 55 to + 100 °C

100 °C

260 °C

Ω

Electrical Characteristics

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Reverse voltage I

Reverse current V

Capacitance V

= 10 mA V

= 10 µAV

= 6.0 V I

= 0 V, f = 1.0 MHz C

Thermal resistance R

thja

6.0 V

1.1 1.5 V

0.01 10 µA

25 pF

750 K/W

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector-emitter breakdown voltage

Voltage emitter-base I

Collector-emitter capacitance V

www.vishay.com

= 1.0 mA, RBE = 1.0 MΩ BV

= 10 µABV

= 10 V, f = 1.0 MHz C

CER

BEO

300 V

7.0 V

7.0 pF

Document Number 83682

Rev. 1.3, 20-Apr-04

Page 3

VISHAY

Parameter Test condition Symbol Min Ty p . Max Unit

Collector - base capacitance VCB = 10 V, f = 1.0 MHz C

Emitter - base capacitance V

= 5.0 V, f = 1.0 MHz C

Thermal resistance R

Coupler

Parameter Test condition Part Symbol Min Ty p . Max Unit

Coupling capacitance C

Saturation voltage, collectoremitter

Collector-emitter leakage

= 10 mA, IC = 2.0 mA SFH640-1 V

= 10 mA, IC = 3.2 mA SFH640-2 V

= 10 mA, IC = 5.0 mA SFH640-3 V

= 200 V, RBE = 1.0 MΩ I

current

Current Transfer Ratio

Parameter Test condition Part Symbol Min Typ . Max Unit

Current Transfer Ratio I

= 10 mA, VCE = 10 V SFH640-1 IC/I

= 1.0 mA, VCE = 10 V SFH640-1 IC/I

= 10 mA, VCE = 10 V SFH640-2 IC/I

= 1.0 mA, VCE = 10 V SFH640-2 IC/I

= 10 mA, VCE = 10 V SFH640-3 IC/I

= 1.0 mA, VCE = 10 V SFH640-3 IC/I

thja

CEsat

CER

Vishay Semiconductors

8.0 pF

38 pF

250 K/W

0.6 pF

0.25 0.4 V

1.0 100 nA

40 80 %

13 30 %

63 125 %

22 45 %

100 200 %

34 70 %

SFH640

Document Number 83682

Rev. 1.3, 20-Apr-04

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Page 4

SFH640

Vishay Semiconductors

Switching Characteristics

Parameter Test condition Symbol Min Ty p. Max Unit

Turn-on time I

Rise time I

Turn-off time I

Fall time I

= 2.0 mA, RL = 100 Ω,

= 10 V

= 2.0 mA, RL = 100 Ω,

= 10 V

= 2.0 mA, RL = 100 Ω,

= 10 V

= 2.0 mA, RL = 100 Ω,

= 10 V

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

off

VCE=10V, normalized to IF=10mA, NCTR = f (IF)

5.0 µs

2.5 µs

6.0 µs

5.5 µs

VISHAY

isfh640_01a

47 Ω

Figure 1. Switching Times Measurement-Test Circuit and

Waveform

Input Pulse

10%

90%

Output Pulse

off

isfh640_02

Figure 3. Current Transfer Ratio (typ.)

VF=f(IF,TA)

isfh640_01b

Figure 2. Switching Times Measurement-Test Circuit and

Waveform

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isfh640_03

Figure 4. Diode Forward Voltage (typ.)

Document Number 83682

Rev. 1.3, 20-Apr-04

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VISHAY

SFH640

Vishay Semiconductors

isfh640_04

ICE=f (VCE,IB)

Figure 5. Output Characteristics (typ.)

ICE=f(VCE,IF)

IF=0,RBE= 1.0 MW, I

=f(VCE)

CER

isfh640_07

Figure 8. Collector-Emitter Leakage Current (typ.)

IF=f(TA)

isfh640_05

isfh640_06

Figure 6. Output Characteristics (typ.)

f=1.0 MHz,

CCE=f(VCE)

CCB=f (VCB),

CEB=f (VEB)

Figure 7. Transistor Capacitances (typ.)

isfh640_08

isfh640_09

Figure 9. Permissible Loss Diode

=f(TA)

IOT

Figure 10. Permissible Power Dissipation

Document Number 83682

Rev. 1.3, 20-Apr-04

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SFH640

Vishay Semiconductors

Package Dimensions in Inches (mm)

VISHAY

.248 (6.30) .256 (6.50)

.039

(1.00)

Min.

4°

typ.

.018 (0.45) .022 (0.55)

i178004

.335 (8.50) .343 (8.70)

Option 7

.300 (7.62)

TYP.

.048 (0.45) .022 (0.55)

.100 (2.54) typ.

pin one ID

.130 (3.30) .150 (3.81)

.031 (0.80) min.

.031 (0.80) .035 (0.90)

3°–9°

ISO Method A

.300 (7.62)

18°

.010 (.25)

.300–.347

(7.62–8.81)

Option 9

.375 (9.53)

.395 (10.03)

typ.

.114 (2.90)

.130 (3.0)

typ.

.028 (0.7)

MIN.

.315 (8.0)

MIN.

.331 (8.4)

MIN.

.406 (10.3)

MAX.

.180 (4.6) .160 (4.1)

.0040 (.102) .0098 (.249)

.300 (7.62)

ref.

.020 (.51)

.040 (1.02)

.315 (8.00)

min.

.012 (.30) typ.

15° max.

18494

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Document Number 83682

Rev. 1.3, 20-Apr-04

Page 7

VISHAY

SFH640

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 83682

Rev. 1.3, 20-Apr-04

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Page 8

Legal Disclaimer Notice

Vishay

Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.