Page 1
SFH6345
i179072
1
2
3
4
8
7
6
5
V
CC
NC
C
E
NC
A
C
NC
Vishay Semiconductors
High Speed Optocoupler, 1 Mbd, 15 kV/ms CMR, Transistor
Output
Features
• Direct Replacement for HCPL4503
• High Speed Optocoupler without Base Connection
• Isolation Test Voltage: 5300 V
• GaAlAs Emitter
• Integrated Detector with Photo diode and Transistor
• High Data Transmission Rate: 1 MBit/s
• TTL Compatible
• Open Collector Output
• Good CTR Linearity Relative to Forward Current
• Field Effect Stable
• Low Coupling Capacitance
• Very High Common Mode Transient Immunity
dV/dt: ≥ 15 kV/µs at V
CM
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
Data Communications
IGBT Drivers
Programmable Controllers
RMS
= 1500 V
e3
Description
The SFH6345 is an optocoupler with a GaAlAs infrared emitting diode, optically coupled to an integrated
photo detector consisting of a photo diode and a high
speed transistor in a DIP-8 plastic package. The
device is similar to the 6N135 but has an additional
Faraday shield on the detector which enhances the
input-output dv/dt immunity.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible reference voltages.
Order Information
Part Remarks
SFH6345 CTR 30 %, DIP-8
SFH6345-X006 CTR 30 %, DIP-8 400 mil (option 6)
SFH6345-X007 CTR 30 %, SMD-8 (option 7)
SFH6345-X009 CTR 30 %, SMD-8 (option 9)
For additional information on the available options refer to
Option Information.
Pb
Pb-free
Document Number 83680
Rev. 1.4, 26-Oct-04
www.vishay.com
1
Page 2
SFH6345
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
DC forward current I
Surge forward current t
≤ 1 µs, 300 pulses/sec. I
p
Power dissipation P
R
F
FSM
diss
3V
25 mA
1A
45 mW
Output
Parameter Test condition Symbol Val ue Unit
Supply voltage V
Output voltage V
Output current I
Power dissipation P
S
O
O
diss
- 0.5 to 30 V
- 0.5 to 25 V
8mA
100 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage between
emitter and detector (refer to
V
ISO
climate DIN 40046, part 2,
Nov. 74)
Creepage ≥ 7mm
Clearance ≥ 7mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance V
= 500 V, T
IO
V
= 500 V, T
IO
Storage temperature range T
Ambient temperature range T
Junction temperature T
Soldering temperature t = 10 sec. max, Dip soldering:
= 25 °C R
amb
= 100 °C R
amb
T
IO
IO
stg
amb
j
sld
distance to seating plane
≥ 1.5 mm
5300 V
RMS
≥ 175
12
≥ 10
11
≥ 10
- 55 to + 150 °C
- 55 to + 100 °C
100 °C
260 °C
Ω
Ω
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2
Document Number 83680
Rev. 1.4, 26-Oct-04
Page 3
VISHAY
SFH6345
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
T
= 0 to 70 °C, unless otherwise specified, typical values T
amb
amb
= 25 °C
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Capacitance V
= 16 mA V
F
= 3 V I
R
= 0 V, f = 1 MHz C
R
Thermal resistance R
F
R
O
thja
1.6 1.9 V
0.5 10 µA
75 pF
700 K/W
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Supply current, logic high I
Output current, output high I
Collector-emitter capacitance V
= 0, VO = open, VCC = 15 V I
F
= 0, VO = VCC = 5.5 V I
F
I
= 0, VO = VCC = 15 V I
F
= 5 V, f = 1 MHz C
CE
Thermal resistance R
CCH
I
CCH
I
OH
OH
OH
CE
thja
0.01 1 µA
0.01 2 µA
.003 0.5 µA
.01 1
50
3pF
300 K/W
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Coupling capacitance C
Collector emitter saturation
voltage
Logic low supply current I
I
= 16 mA, IO = 2.4 mA,
F
= 4.5 V
V
CC
= 16 mA, VO = open,
F
V
= 15 V
CC
Current Transfer Ratio
Parameter Test condition Symbol Min Ty p. Max Unit
Current Transfer Ratio I
= 16 mA, VO = 0.4 V,
F
= 4.5 V
V
CC
I
= 16 mA, VO = 0.5 V,
F
= 4.5 V
V
CC
V
I
CCL
I
C/IF
I
C/IF
OL
C
0.6 pF
0.1 0.4 V
80 200 µA
19 30 %
15 %
Document Number 83680
Rev. 1.4, 26-Oct-04
www.vishay.com
3
Page 4
SFH6345
Vishay Semiconductors
Switching Characteristics
Parameter Test condition Symbol Min Ty p. Max Unit
Propagation delay time (highlow), see fig. 1
Propagation delay time (lowhigh), see fig. 1
Pulse generator
ZO=50Ω
tr,tf=5ns
duty cycle 10%
t ≤100 µs
= 16 mA, VCC = 5 V,
I
F
= 1.9 kΩ
R
L
I
= 16 mA, VCC = 5 V,
F
= 1.9 kΩ
R
L
t
PHL
t
PLH
VISHAY
0.3 0.8 µs
0.3 0.8 µs
I
F
t
8
7
6
5
C=100 nF
isfh6345_01
I
Monitor
F
100 Ω
1
I
F
2
3
4
Figure 1. Switching times (typ.)
Common Mode Transient Immunity
Parameter Test condition Symbol Min Ty p. Max Unit
Common mode transient
immunity (high), see fig. 2
Common mode transient
immunity (low), see fig. 2
I
1
F
2
A
isfh6345_02
B
V
CC
3
4
= 0, VCM = 1500 V
I
F
= 1.9 kΩ, VCC = 5 V
R
L
I
= 16 mA, VCM = 1500 V
F
= 1.9 kΩ, VCC = 5 V
R
L
Pulse generator
V
CM
C = 0.1 µF
8
7
6
5
R
P-P
5V
L
V
R
CL=15pF
,
P-P
O
5V
L
V
V
O
O
,
V
OL
t
PHL
| CM
|15 30 kV/µs
H
| CM
|15 30 kV/µs
L
V
CM
90%
10% 90%
0V
t
V
5V
V
V
OL
r
O
O
10%
t
f
t
PLH
A: IF=0mA
B: IF=16mA
5V
1.5 V
t
t
t
t
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4
Figure 2. Common mode transient immunity
Document Number 83680
Rev. 1.4, 26-Oct-04
Page 5
VISHAY
isfh6345_06
25
20
15
10
5
0
0 5 10 15 20 25
Output Voltage, Vo (V)
Output Current, Io(mA)
IF=15mA
IF=10mA
IF=5mA
IF=40mA
IF=20mA
IF=35mA
IF=30mA
IF=25mA
(VCC= 5.0 V)
isfh6345_07
8
7
6
5
4
3
2
1
0
-60 -40 -20 0 20 40 60 80 100
Output Current, Io (mA)
Temperature, Ta (°C)
IF = 20mA
IF = 16mA
IF = 10mA
IF=2mA
IF=1mA
@VO= 0.4 V, VCC= 5.0
isfh6345_08
900
800
700
600
500
400
300
200
100
0
-60 -40 -20 0 20 40 60 80 100
tp - Propagation Delay Time - ns
Temperature, Ta (°C)
TpHL@3V
TpHL @ 1.5 V
TpLH @ 1.5 V
TpLH@3V
@VCC= 5.0 V
IF= 16 mA, RL= 1.9 kΩ
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
20
15
SFH6345
25 °C
1.5
- LED Current in mA
F
I
isfh6345_03
10
75 °C
5
0
1.3
1.4
VF- LED forward Voltage
Figure 3. Logic high output current vs. temperature
30
20
10
LED Current in ma
F
I
isfh6345_04
0
0
20
40
Ambient Temperature in °C
60
1.6
80
0°C
1.7
Figure 6. Output Current vs. Output Voltage
100
Figure 4. Permissible Forward LED Current vs. Temperature
120
100
80
60
40
Total Power in mW
20
0
isfh6345_05
Figure 5. Permissible Power Dissipation vs. Temperature
Document Number 83680
Rev. 1.4, 26-Oct-04
Detector
Emitter
Ambient Temperature in °C
Figure 7. Output Current vs. Temperature
806040200
100
Figure 8. Propagation Delay vs. Ambient Temperature
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5
Page 6
SFH6345
isfh6345_10
0.6
0.5
0.4
0.3
0.2
0.1
0
10 15 20 25
ˇ
∆i
F
/∆i
O
/ Small Signal Current
Transfer Ratio
IF/mA
5
0
(VCC= 5.0 V, RL= 100 Ω)
Vishay Semiconductors
100
10
VCC=VO=15V
1
0.1
0.01
- Collector Current, IC (nA)
OH
I
0.001
-60 -40 -20 100
isfh6345_09
0
20
Temperature, TA(°C)
40
VISHAY
VCC=VO=5V
60 80
Figure 9. Logic high output current vs. temperature
Package Dimensions in Inches (mm)
pin one ID
i178006
.255 (6.48)
.268 (6.81)
.030 (0.76)
.045 (1.14)
4° typ.
.050 (1.27)
.018 (.46)
.022 (.56)
4
3
5
6
.379 (9.63)
.390 (9.91)
1
2
78
.031 (0.79)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
Figure 10. Small Signal Current Transfer Ratio vs. Quiescent Input
Current
ISO Method A
.300 (7.62)
typ.
.230(5.84)
.250(6.35)
3°–9°
10°
.110 (2.79)
.130 (3.30)
.008 (.20)
.012 (.30)
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6
Document Number 83680
Rev. 1.4, 26-Oct-04
Page 7
VISHAY
SFH6345
Vishay Semiconductors
Option 6
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.028 (0.7)
MIN.
Option 7
.300 (7.62)
TYP.
.315 (8.0)
MIN.
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
.012 (.30) typ.
15° max.
18450
Document Number 83680
Rev. 1.4, 26-Oct-04
www.vishay.com
7
Page 8
SFH6345
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 83680
Rev. 1.4, 26-Oct-04
Page 9
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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