VISHAY SFH6345 User Manual
SFH6345
i179072
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V
CC
NC
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E
NC
A
C
NC
Vishay Semiconductors
High Speed Optocoupler, 1 Mbd, 15 kV/ms CMR, Transistor
Output
Features
• Direct Replacement for HCPL4503
• High Speed Optocoupler without Base Connection
• Isolation Test Voltage: 5300 V
• GaAlAs Emitter
• Integrated Detector with Photo diode and Transistor
• High Data Transmission Rate: 1 MBit/s
• TTL Compatible
• Open Collector Output
• Good CTR Linearity Relative to Forward Current
• Field Effect Stable
• Low Coupling Capacitance
• Very High Common Mode Transient Immunity
dV/dt: ≥ 15 kV/µs at V
CM
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
Data Communications
IGBT Drivers
Programmable Controllers
RMS
= 1500 V
e3
Description
The SFH6345 is an optocoupler with a GaAlAs infrared emitting diode, optically coupled to an integrated
photo detector consisting of a photo diode and a high
speed transistor in a DIP-8 plastic package. The
device is similar to the 6N135 but has an additional
Faraday shield on the detector which enhances the
input-output dv/dt immunity.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible reference voltages.
Order Information
Part Remarks
SFH6345 CTR 30 %, DIP-8
SFH6345-X006 CTR 30 %, DIP-8 400 mil (option 6)
SFH6345-X007 CTR 30 %, SMD-8 (option 7)
SFH6345-X009 CTR 30 %, SMD-8 (option 9)
For additional information on the available options refer to
Option Information.
Pb
Pb-free
Document Number 83680
Rev. 1.4, 26-Oct-04
www.vishay.com
1
SFH6345
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
DC forward current I
Surge forward current t
≤ 1 µs, 300 pulses/sec. I
p
Power dissipation P
R
F
FSM
diss
3V
25 mA
1A
45 mW
Output
Parameter Test condition Symbol Val ue Unit
Supply voltage V
Output voltage V
Output current I
Power dissipation P
S
O
O
diss
- 0.5 to 30 V
- 0.5 to 25 V
8mA
100 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage between
emitter and detector (refer to
V
ISO
climate DIN 40046, part 2,
Nov. 74)
Creepage ≥ 7mm
Clearance ≥ 7mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance V
= 500 V, T
IO
V
= 500 V, T
IO
Storage temperature range T
Ambient temperature range T
Junction temperature T
Soldering temperature t = 10 sec. max, Dip soldering:
= 25 °C R
amb
= 100 °C R
amb
T
IO
IO
stg
amb
j
sld
distance to seating plane
≥ 1.5 mm
5300 V
RMS
≥ 175
12
≥ 10
11
≥ 10
- 55 to + 150 °C
- 55 to + 100 °C
100 °C
260 °C
Ω
Ω
www.vishay.com
2
Document Number 83680
Rev. 1.4, 26-Oct-04
VISHAY
SFH6345
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
T
= 0 to 70 °C, unless otherwise specified, typical values T
amb
amb
= 25 °C
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Capacitance V
= 16 mA V
F
= 3 V I
R
= 0 V, f = 1 MHz C
R
Thermal resistance R
F
R
O
thja
1.6 1.9 V
0.5 10 µA
75 pF
700 K/W
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Supply current, logic high I
Output current, output high I
Collector-emitter capacitance V
= 0, VO = open, VCC = 15 V I
F
= 0, VO = VCC = 5.5 V I
F
I
= 0, VO = VCC = 15 V I
F
= 5 V, f = 1 MHz C
CE
Thermal resistance R
CCH
I
CCH
I
OH
OH
OH
CE
thja
0.01 1 µA
0.01 2 µA
.003 0.5 µA
.01 1
50
3pF
300 K/W
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Coupling capacitance C
Collector emitter saturation
voltage
Logic low supply current I
I
= 16 mA, IO = 2.4 mA,
F
= 4.5 V
V
CC
= 16 mA, VO = open,
F
V
= 15 V
CC
Current Transfer Ratio
Parameter Test condition Symbol Min Ty p. Max Unit
Current Transfer Ratio I
= 16 mA, VO = 0.4 V,
F
= 4.5 V
V
CC
I
= 16 mA, VO = 0.5 V,
F
= 4.5 V
V
CC
V
I
CCL
I
C/IF
I
C/IF
OL
C
0.6 pF
0.1 0.4 V
80 200 µA
19 30 %
15 %
Document Number 83680
Rev. 1.4, 26-Oct-04
www.vishay.com
3
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