VISHAY SFH6318T, SFH6319T User Manual

SFH6318T/ SFH6319T

i179070

1

2

3

4

8

7

6

5

V

CC

NC

A

C

NC

V

0

V

B

GND

Vishay Semiconductors

High Speed Optocoupler, 100 kBd, Low Input Current, High Gain

Features

• Industry Standard SOIC-8 Surface Mountable
Package

• High Current Transfer Ratio, 800 %

• Low Input Current, 0.5 mA

• High Output Current, 60 mA

• Isolation Test Voltage, 3000 V

• TTL Compatible Output, VOL = 0.1 V

• Adjustable Bandwidth-Access to Base

• Lead-free component

RMS

e3

Pb

Pb-free

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E52744 System Code H or J,
Double Protection

• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1

• CSA 93751

Applications

Logic Ground Isolation -TTL/TTL, TTL/CMOS,
CMOS/CMOS, CMOS/TTL

EIA RS 232C Line Receiver
Low Input Current Line Receiver Long Lines, Party

Lines
Telephone Ring Detector
117 VAC Line Voltage Status Indication - Low Input

Power Dissipation
Low Power Systems - Ground Isolation

Description

Very high current ratio together with 3000 V
tion are achieved by coupling an LED with an inte­grated high gain photo detector in a SOIC-8 package.
Separate pins for the photo diode and output stage

RMS

isola-

enable TTL compatible saturation voltages with high
speed operation. Photodarlington operation is
achieved by tying the V

and VO terminals together.

CC

Access to the base terminal allows adjustment to the
gain bandwidth.

The SFH6318T is ideal for TTL applications since the
300 % minimum current transfer ratio with an LED
current of 1.6 mA enables operation with one unit
load-in and one unit load-out with a 2.2 kΩ pull-up
resistor.

The SFH6319T is best suited for low power logic
applications involving CMOS and low power TTL. A
400 % current transfer ratio with only 0.5 mA of LED
current is guaranteed from 0 °C to 70 °C.

Caution:
Due to the small geometries of this device, it should
be handled with Electrostatic Discharge (ESD) pre­cautions. Proper grounding would prevent damage
further and/or degradation which may be induced by
ESD.

Order Information

Part Remarks

SFH6318T CTR 1600 (300 - 2600) %, SOIC-8

SFH6319T CTR 2000 (400 - 3500) %, SOIC-8

For additional information on the available options refer to
Option Information.

Note Product available only on tape and reel

Document Number 83678

Rev. 1.4, 26-Oct-04

www.vishay.com

1

SFH6318T/ SFH6319T

Vishay Semiconductors

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Par t Symbol Val ue Unit

Reverse input voltage V

Supply and output voltage V

(pin 8-5), VO (pin 6-5) SFH6318T VCC, V

CC

SFH6319T V

Input power dissipation P

CC

R

, V

diss

O

O

Derate linearly above 50 °C

Free air temperature 0.7 mW/°C

Average input current I

Peak input current 50 % duty cycle-1.0 ms pulse

width

Peak transient input current t

≤ 1.0 µs, 300 pps I

p

F(AVG)

I

FRM

FSM

3.0 V

- 0.5 to 7.0 V

- 0.5 to 18 V

35 mW

20 mA

40 mA

1.0 A

Output

Parameter Test condition Symbol Val ue Unit

Output current (pin 6) I

Emitter-base reverse current

O

60 mA

0.5 V

(pin 5-7)

Output power dissipation P

diss

150 mW

Derate linearly from 25 °C 2.0 mW/°C

Coupler

Parameter Test condition Symbol Val ue Unit

Storage temperature T

Lead soldering temperature t = 10 s T

Junction temperature T

Ambient temperature range T

Isolation test voltage between

V

stg

sld

j

amb

ISO

emitter and detector (refer to
climate DIN 40046, part 2, Nov.

74)

Pollution degree (DIN VDE

0110)

Creepage distance ≥ 4.0 mm

Clearance ≥ 4.0 mm

Comparative tracking index per
DIN IEC 112/VDE 0303, part 1

Isolation resistance V

= 500 V, T

IO

V

= 500 V, T

IO

= 25 °C R

amb

= 100 °C R

amb

IO

IO

- 55 to + 125 °C

260 °C

100 °C

- 55 to + 100 °C

3000 V

RMS

2

175

12

≥ 10

11

≥ 10

Ω

Ω

www.vishay.com

2

Document Number 83678

Rev. 1.4, 26-Oct-04

SFH6318T/ SFH6319T

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

T

= 0 °C to 70 °C. Typical values are specified at T

amb

Parameter Test condition Part Symbol Min Ty p. Max Unit

Input forward voltage I

Temperature coefficient, forward

= 1.6 mA V

F

I

= 1.6 mA ∆VF/

F

voltage

Output

T

= 0 °C to 70 °C. Typical values are specified at T

amb

Parameter Test condition Symbol Min Ty p. Max Unit

Logic low output voltage,
see note 2

Logic high output current,
see note 2

Logic low supply current,
see note 2

Logic high supply current,
see note 2

= 1.6 mA, IO = 4.8 mA,

I

F

= 4.5 V

V

CC

I

= 1.6 mA, IO = 8.0 mA,

F

= 4.5 V

V

CC

I

= 5.0 mA, IO = 15 mA,

F

= 4.5 V

V

CC

I

= 12 mA, IO = 24 mA,

F

= 4.5 V

V

CC

I

= 0 mA, VO = VCC = 7.0 V I

F

= 0 mA, VO = VCC = 18 V I

I

F

I

= 1.6 mA, VO = OPEN,

F

= 18 V

V

CC

I

= 0 mA, VO = OPEN,

F

V

= 18 V

CC

amb

amb

= 25 °C.

= 25 °C.

V

V

V

V

I

CCL

I

CCH

OL

OL

OL

OL

IO

IO

∆T

F

amb

1.4 1.7 V

- 1.8 mV/°C

0.1 0.4 V

0.1 0.4 V

0.15 0.4 V

0.25 0.4 V

0.1 250 µA

0.05 100 µA

0.2 1.5 mA

0.01 10 µA

Coupler

T

= 0 °C to 70 °C. Typical values are specified at T

amb

amb

= 25 °C.

Parameter Test condition Symbol Min Ty p. Max Unit

Capacitance (input-output) (see

f = 1.0 MHz C

IO

0.6 pF

note 3)

Input capacitance f = 1.0 MHz, V

Resistance (input-output),
see note 3

V

= 500 VDC, T

IO

= 500 VDC, T

V

IO

= 0 C

F

= 25 °C R

amb

= 100 °C R

amb

IN

IO

IO

25 pF

12

10

11

10

Current Transfer Ratio

T

= 0 °C to 70 °C. Typical values are specified at T

amb

Para me ter Test condition Part Symbol Min Ty p. Max Unit

Current Transfer

IF = 1.6 mA, VO = 0.4 V, VCC = 4.5 V SFH6318T CTR 300 1600 2600 %

Ratio

See notes 1 and 2

= 0.5 mA, VO = 0.4 V, VCC = 4.5 V SFH6319T CTR 400 2000 3500 %

I

F

I

= 1.6 mA, VO = 0.4 V, VCC = 4.5 V SFH6319T CTR 500 1600 2600 %

F

Document Number 83678

Rev. 1.4, 26-Oct-04

amb

= 25 °C.

Ω

Ω

www.vishay.com

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