• Compatible with Infrared Vapor Phase Reflow and
Wave Soldering Processes
• Isolation Test Voltage, 3000 V
• Very High Common Mode Transient Immunity:
15000 V/ µs at V
= 1500 V Guaranteed
CM
(SFH6343)
• High Speed: 1.0 Mb/s
• TTL Compatible
• Guaranteed AC and DC Performance Temperature: 0 °C to 70 °C
• Open Collector Output
• Pin Compatible with Agilent(HP) Optocouplers
- SFH6315T-HCPL0500
- SFH6316T-HCPL0501
- SFH6343T-HCPL0453
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code Y
• CSA 93751
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
RMS
Description
The SFH6315T/ SFH6316T/ SFH6343T, high speed
optocouplers, each consists of a GaAlAs infrared
emitting diode, optically coupled with an integrated
photo detector and a high speed transistor. The photo
detector is junction isolated from the transistor to
reduce miller capacitance effects. The open collector
output function allows circuit designers to adjust the
load conditions when interfacing with different logic
systems such as TTL, CMOS, etc.
Because the SFH6343T has a Faraday shield on the
detector chip, it can also reject and minimize high
input to output common mode transient voltages.
There is no base connection, further reducing the
potential electrical noise entering the package.
The SFH6315T/ SFH6316T/ SFH6343T are packaged in industry standard SOIC-8 packages and are
suitable for surface mounting.
e3
Pb
Pb-free
Applications
Line Receivers
Logic Ground Isolation
Analog Signal Ground Isolation
Replace Pulse Transformers
Document Number 83677
Rev. 1.6, 26-Oct-04
Order Information
PartRemarks
SFH6315TCTR > 5.0 %, SOIC-8
SFH6316TCTR > 15 %, SOIC-8
SFH6343TCTR > 19 %, SOIC-8
For additional information on the available options refer to
Option Information.
Note that product is available only on tape and reel.
www.vishay.com
1
SFH6315T/ SFH6316T/ SFH6343T
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
ParameterTest conditionSymbolVal ueUnit
Reverse voltageV
DC forward currentI
Surge forward currentt
Power dissipationT
≤ 1.0 µs, 300 pulses/sI
p
≤ 70 °CP
amb
R
F
FSM
diss
3.0V
25mA
1.0A
45mW
Output
ParameterTest conditionSymbolVal ueUnit
Supply voltageV
Output voltageV
Output currentI
Power dissipationT
≤ 70 °CP
amb
S
O
O
diss
- 0.5 to 30V
- 0.5 to 25V
8.0mA
100mW
Coupler
ParameterTest conditionSymbolVal ueUnit
Isolation test voltage between
emitter and detector (refer to
V
ISO
climate DIN 40046, part 2,
Nov.74)
Pollution degree (DIN VDE
0110)
Creepage≥ 4.0mm
Clearance≥ 4.0mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistanceV
= 500 V, T
IO
R
ISOL
V
= 500 V, T
IO
R
ISOL
(Note 2)
(Note 2)
= 25 °C,
amb
= 100 °C,
amb
Storage temperature rangeT
Ambient temperature rangeT
Junction temperatureT
R
R
amb
IO
IO
stg
j
Soldering temperaturet = 10 s max., Dip soldering:
distance to seating plane
≥1.5 mm
3000V
2
175
12
≥ 10
11
≥ 10
-55 to +150°C
-55 to +100°C
100°C
260°C
RMS
Ω
Ω
www.vishay.com
2
Document Number 83677
Rev. 1.6, 26-Oct-04
VISHAY
SFH6315T/ SFH6316T/ SFH6343T
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Over recommend temperature (T
ParameterTest conditionSymbolMinTy p.MaxUnit
Input forward voltageI
Input reverse currentV
Input capacitancef = 1.0 MHz, V
Temperature coefficient of
forward voltage
= 0 °C to 70 °C) unless otherwise specified. See note 6. All typical values at T
= 0°C to 70°C ), VCC = 5.0 V, IF = 16 mA unless otherwise specified. All typical values, T
amb
R
µ
F
+5 V
L
V
CL=15pF
8
7
6
0.1
5
Figure 1. Test Circuit for Switching Times
RL = 4.1 KΩSFH6315Tt
R
= 1.9 KΩSFH6316Tt
L
RL = 4.1 KΩSFH6315Tt
R
=1.9 KΩSFH6316Tt
L
R
= 1.9 KΩSFH6343Tt
L
I
F
0
V
O
O
t
PHL
SFH6315Tt
SFH6343Tt
SFH6315Tt
VISHAY
5V
1.5 V
t
PLH
*0.51.5µs
PHL
PHL
PHL
PHL
*0.51.5µs
PLH
PLH
PLH
PLH
1.5 V
V
OL
0.52.0µs
0.250.8µs
0.251.0µs
0.52.0µs
0.50.8µs
0.51.0µs
amb
= 25 °C
www.vishay.com
4
Document Number 83677
Rev. 1.6, 26-Oct-04
VISHAY
SFH6315T/ SFH6316T/ SFH6343T
Vishay Semiconductors
Common Mode Transient Immunity
ParameterTest conditionPartSymbolMinTy p .MaxUnit
Common mode transient
immunity at logic high level
output
See fig. 2 and notes 3,4 and 5
Common mode transient
immunity at logic low level
output
See fig. 2 and notes 3,4 and 5
RL = 4.1 KΩ, IF = 0 mA,
= 10 V
V
CM
R
= 1.9 KΩ, IF = 0 mA,
L
V
CM
P-P
= 1500 V
P-P
RL = 4.1 KΩ, IF = 16 mA,
= 10 V
V
CM
R
= 1.9 K Ω, IF = 16 mA,
L
V
CM
R
= 1.9 K Ω, IF = 16 mA,
L
V
CM
P-P
= 10 V
P-P
= 1500 V
P-P
1. Current transfer ratio in percent equals the ratio of output collector current (IO) to the forward LED input current (IF) times 100
2. Device considered a two-terminal device: pins 1, 2, 3, and 4 shorted together and pins 5, 6, 7, and 8 shorted together.
3. Common mode transient immunity in a Logic High level is the maximum tolerable (positive) dV
mode pulse (V
Low level the maximum tolerable (negative) dV
will remain in Logic Low state, i.e., V
) to assure that the output will remain in a Logic High state (i.e., VO > 2.0 V). Common mode transient immunity in a Logic
CM
> 0.8 V).
O
/dt on the trailing edge of the common mode pulse signal (VCM to assure that the output
CM
4. The 1.9 kΩ load represents 1 TTL unit load of 1.6 mA and the 5.6 kΩ pull-up resistor.
5. The 4.1 kΩ load represents 1 LSTTL unit load of 0.36 mA and the 6.1 kΩ pull-up resistor.
6. A 0.1 µf bypass capacitor connected between pins 5 and 8 is recommended.
SFH6315T|CMH|1.0KV/µs
SFH6316T|CMH|1.0KV/µs
SFH6343T|CM
|1530KV/µs
H
SFH6315T|CML|1.0KV/µs
SFH6316T|CML|1.0KV/µs
SFH6343T|CML|1530KV/µs
/dt on the leading edge of the common
CM
isfh6315t_02
R
L
0.1 µF
+5 V
V
O
V
CM
10%
0V
V
O
Switch at A: IF=0mA
V
O
Switch at B: IF=16mA
90%
90%
10%
t
r
t
f
5V
V
OL
1
I
F
2
A
B
V
CC
3
4
V
+–
Pulse Generator
8
7
6
5
CM
Figure 2. Test Circuit for Transient Immunity and Typical Waveforms
Document Number 83677
Rev. 1.6, 26-Oct-04
www.vishay.com
5
SFH6315T/ SFH6316T/ SFH6343T
isfh6315t_07
8
7
6
5
4
3
2
1
0
-60 -40-20020406080 100
Output Current, Io (mA)
Temperature, Ta (°C)
IF = 20mA
IF = 16mA
IF = 10mA
IF=2mA
IF=1mA
@VO= 0.4 V, VCC= 5.0
isfh6315t_08
900
800
700
600
500
400
300
200
100
0
-60 -40-20020406080 100
tp - Propagation Delay Time - ns
Temperature, Ta (°C)
TpHL@3V
TpHL @ 1.5 V
TpLH @ 1.5 V
TpLH@3V
SFH6316T and SFH6343T
@VCC= 5.0 V
IF= 16 mA, RL= 1.9 kΩ
isfh6315t_09
1400
1200
1000
800
600
400
200
0
-60 -40-20100
TpLH
TpHL
Temperature, Ta (°C)
tp - Propagation Delay Time - ns
0
2040
60
80
SFH6315T @ VCC= 5.0 V,
IF=16mA,RL= 4.1 kΩ
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
20
15
25 °C
0°C
1.71.61.51.41.3
- LED Current in mA
F
I
isfh6315t_03
10
75 °C
5
0
VF- LED forward Voltage
VISHAY
Figure 3. LED Forward Current vs.Forward Voltage
30
20
10
LED Current in ma
F
I
0
Ambient Temperature in °C
isfh6315t_04
100806040200
Figure 4. Permissible Forward LED Current vs. Temperature
120
Total Power in mW
100
80
60
40
20
0
Detector
Emitter
100806040200
Ambient Temperature in °C
Figure 6. Output Current vs. Temperature
Figure 7. Propagation Delay vs. Temperature-SFH6316T and
SFH6343T
isfh6315t_05
Figure 5. Permissible Power Dissipation vs. Temperature
www.vishay.com
6
Figure 8. Propagation Delay vs. Temperature-SFH6315T
Document Number 83677
Rev. 1.6, 26-Oct-04
VISHAY
isfh6315t_11
0.6
0.5
0.4
0.3
0.2
0.1
0
10152025
ˇ
∆i
F
/∆i
O
/ Small Signal Current
Transfer Ratio
IF/mA
5
0
(VCC= 5.0 V, RL= 100 Ω)
100
10
VCC=VO=15V
1
0.1
0.01
- Collector Current, IC (nA)
OH
I
0.001
-60 -40-20100
isfh6315t_10
0
20
Temperature, TA(°C)
40
SFH6315T/ SFH6316T/ SFH6343T
Vishay Semiconductors
VCC=VO=5V
6080
Figure 9. Logic High Output Current vs.Temperature
Package Dimensions in Inches (mm)
.120± .005
.240
(6.10)
ISO Method A
(3.05± .13)
Pin One ID
.192± .005
(4.88± .13)
.004 (.10)
.008 (.20)
.050 (1.27)
.021 (.53)
typ.
.154± .005
C
L
(3.91± .13)
.016 (.41)
Figure 10. Small Signal Current Transfer Ratio vs. Quiescent Input
Current
R .010 (.13)
.050 (1.27)
.014 (.36)
.036 (.91)
.170 (4.32)
.045 (1.14)
.260 (6.6)
7°
.015± .002
40°
.058± .005
(1.49± .13)
(.38± .05)
.125± .005
.008 (.20)
.020± .004
(.51± .10)
5° max.
R.010
(.25) max.
(3.18± .13)
Lead
Coplanarity
±.0015 (.04)
max.
2 plcs.
i178003
Document Number 83677
Rev. 1.6, 26-Oct-04
www.vishay.com
7
SFH6315T/ SFH6316T/ SFH6343T
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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