VISHAY SFH628A, SFH6286 User Manual
SFH628A / SFH6286
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input, Low Input
Current
Features
• High Common-mode Interference
Immunity
• Isolation Test Voltage, 5300 V
• Low Coupling Capacitance
• Good CTR Linearity Depending on
Forward Current
• Low CTR Degradation
• High Collector-emitter Voltage, V
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
RMS
CEO
= 55 V
e3
i179080
A/C
C/A
1
4
1
2
C
E
3
1
Agency Approvals
• UL1577, File No. E52744 System Code J
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
Telecom
Industrial Controls
Battery Powered Equipment
Office Machines
Description
The SFH628A (DIP) and SFH6286 (SMD) feature a
high current transfer ratio, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared emitting diode, which is optically coupled to a silicon planar phototransistor detector, and
is incorporated in a plastic DIP-4 or SMD package.
The coupling devices are designed for signal transmission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of > 8.0 mm are
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
to an operation voltage of 400 V
RMS
or DC.
Order Information
Part Remarks
SFH628A-2 CTR 63 - 200 %, DIP-4
SFH628A-3 CTR 100 - 320 %, DIP-4
SFH628A-4 CTR 160 - 500 %, DIP-4
SFH6286-2 CTR 63 - 200 %, SMD-4
SFH6286-3 CTR 100 - 320 %, SMD-4
SFH6286-4 CTR 160 - 500 %, SMD-4
SFH628A-2X006 CTR 63 - 200 %, DIP-4 400 mil (option 6)
SFH628A-3X006 CTR 100 - 320 %, DIP-4 400 mil (option 6)
SFH628A-3X007 CTR 100 - 320 %, SMD-4 (option 7)
SFH628A-4X006 CTR 160 - 500 %, DIP-4 400 mil (option 6)
For additional information on the available options refer to
Option Information.
Document Number 83722
Rev. 1.6, 11-May-04
www.vishay.com
1
SFH628A / SFH6286
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the devise. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
DC Forward current I
Surge forward current t ≤ 10 µsI
F
FSM
Output
Parameter Test condition Symbol Val ue Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector current I
t
≤ 1.0 ms I
p
Power dissipation P
CE
EC
C
C
diss
± 50 mA
± 2.5 A
55 V
7.0 V
50 mA
100 mA
150 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage between
emitter and detector, refer to
V
ISO
Climate DIN 40046, part2,
Nov.74
Creepage distance ≥ 7.0 mm
Clearance ≥ 7.0 mm
Insulation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDEO 303, part 1
Isolation resistance V
= 500 V, T
IO
V
= 500 V, T
IO
Storage temperature range T
Ambient temperature range T
Junction temperature T
Soldering temperature max. 10 s. Dip Soldering
distance to seating plane
= 25 °C R
amb
= 100 °C R
amb
T
IO
IO
stg
amb
j
sld
≥ 1.5 mm
5300 V
≥ 0.4 mm
175
12
≥ 10
11
≥ 10
- 55 to +150 °C
- 55 to +100 °C
100 °C
260 °C
RMS
Ω
Ω
www.vishay.com
2
Document Number 83722
Rev. 1.6, 11-May-04
SFH628A / SFH6286
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Capacitance V
= 5.0 mA V
F
= 0 V, f = 1.0 MHz C
R
Thermal resistance R
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter leakage
current
Collector-emitter capacitance V
Thermal resistance R
= 10 V I
V
CE
= 5.0 V, f = 1.0 MHz C
CE
F
O
thja
CEO
CE
thja
1.1 1.5 V
45 pF
1070 K/W
10 200 nA
7pF
500 K/W
Coupler
Parameter Test condition Par t Symbol Min Ty p. Max Unit
Collector-emitter saturation
voltage
Current Transfer Ratio
Parameter Test condition Par t Symbol Min Ty p. Max Unit
I
C/IF
= ± 1.0 mA, IC = 0.5 mA SFH628A-2
I
F
= ± 1.0 mA, IC = 0.8 mA SFH628A-3
I
F
SFH6286-2
SFH6286-3
= ± 1.0 mA, IC = 1.25 mA SFH628A-4
I
F
SFH6286-4
IF = ± 1.0 mA, VCE = 0.5 V SFH628A-2
SFH6286-2
= ± 0.5 mA, VCE = 1.5 V SFH628A-2
I
F
SFH6286-2
= ± 1.0 mA, VCE = 0.5 V SFH628A-3
I
F
= ± 0.5 mA, VCE = 1.5 V SFH628A-3
I
F
= ± 1.0 mA, VCE = 0.5 V SFH628A-4
I
F
= ± 0.5 mA, VCE = 1.5 V SFH628A-4
I
F
SFH6286-3
SFH6286-3
SFH6286-4
SFH6286-4
V
V
V
CEsat
CEsat
CEsat
0.25 0.4 V
0.25 0.4 V
0.25 0.4 V
CTR 63 200 %
CTR 32 100 %
CTR 100 320 %
CTR 50 160 %
CTR 160 500 %
CTR 80 250 %
Document Number 83722
Rev. 1.6, 11-May-04
www.vishay.com
3
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