SFH620A / SFH6206
Document Number 83675
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
1
i179080
1
1
E
C
A/C
C/A
1
2
4
3
Pb
Pb-free
e3
Optocoupler, Phototransistor Output, AC Input
Features
• Good CTR Linearity Depending on
Forward Current
• Isolation Test Voltage, 5300 V
RMS
• High Collector-emitter Voltage, V
CEO
= 70 V
• Low Saturation Voltage
• Fast Switching Times
• Low CTR Degradation
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100 "(2.54 mm) Spacing
• High Common-Mode Interference Immunity
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code J
• CSA 93751
• BSI IEC60950 IEC60065
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Description
The SFH620A (DIP) and SFH6206 (SMD) feature a
high current transfer ratio, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and
is incorporated in a plastic DIP-4 or SMD package.
The coupling devices are designed for signal transmission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of > 8.0 mm are
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
to an operation voltage of 400 V
RMS
or DC.
Order Information
For additional information on the available options refer to
Option Information.
Part Remarks
SFH620A-1 CTR 40 - 125 %, DIP-4
SFH620A-2 CTR 63 - 200 %, DIP-4
SFH620A-3 CTR 100 - 320 %, DIP-4
SFH6206-1 CTR 40 - 125 %, SMD-4
SFH6206-2 CTR 63 - 200 %, SMD-4
SFH6206-3 CTR 100 - 320 %, SMD-4
SFH620A-1-X006 CTR 40 - 125 %, DIP-4 mil (option 6)
SFH620A-2-X006 CTR 63 - 200 %, DIP-4 mil (option 6)
SFH620A-2-X007 CTR 63 - 200 %, SMD-4 (option 7)
SFH620A-3-X006 CTR 100 - 320 %, DIP-4 mil (option 6)
SFH620A / SFH6206
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Parameter Test condition Symbol Value Unit
Reverse voltage V
R
6.0 V
DC Forward current I
F
± 60 mA
Surge forward current t
p
d 10 Ps I
FSM
± 2.5 A
Power dissipation P
diss
100 mW
Parameter Test condition Symbol Value Unit
Collector-emitter voltage V
CE
70 V
Emitter-collector voltage V
EC
7.0 V
Collector current I
C
50 mA
t
p
d 1.0 ms I
C
100 mA
Power dissipation P
diss
150 mW
Parameter Test condition Symbol Value Unit
Isolation test voltage between
emitter and detector, refer to
climate DIN 40046, part 2,
Nov.74
V
ISO
5300 V
RMS
Creepage t 7.0 mm
Clearance t 7.0 mm
Insulation thickness between
emitter and detector
t 4.0 mm
Comparative tracking index per
DIN IEC 112/VDEO 303, part 1
175
Isolation resistance VIO = 500 V, T
amb
= 25 °C R
IO
t 10
12
:
V
IO
= 500 V, T
amb
= 100 °C R
IO
t 10
11
:
Storage temperature range T
stg
- 55 to + 150 °C
Ambient temperature range T
amb
- 55 to + 100 °C
Junction temperature T
j
100 °C
Soldering temperature max. 10 s. dip soldering
distance to seating plane
t 1.5 mm
T
sld
260 °C
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2
Document Number 83675
Rev. 1.5, 26-Oct-04
SFH620A / SFH6206
Document Number 83675
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Note: Still air, coupler soldered to PCB or base
Current Transfer Ratio
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = ± 60 mA V
F
1.25 1.65 V
Capacitance V
R
= 0 V, f = 1.0 MHz C
O
50 pF
Thermal resistance R
thja
750 °C/W
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter capacitance VCE = 5.0 V, f = 1.0 MHz C
CE
6.8 pF
Thermal resistance R
thja
500 °C/W
Parameter Test condition Part Symbol Min Typ. Max Unit
Collector-emitter saturation
voltage
IF = 10 mA, IC = 2.5 mA V
CEsat
0.25 0.4 V
Coupling capacitance C
C
0.2 pF
Collector-emitter leakage
current
V
CE
= 10 V SFH620A-1
SFH6206-1
I
CEO
2.0 50 nA
SFH620A-2
SFH6206-2
I
CEO
2.0 50 nA
SFH620A-3
SFH6206-3
I
CEO
5.0 100 nA
Parameter Test condition Part Symbol Min Typ. Max Unit
IC/I
F
VCE = 5.0 V, IF = ± 10 mA SFH620A-1
SFH6206-1
CTR 40 125 %
SFH620A-2
SFH6206-2
CTR 63 200 %
SFH620A-3
SFH6206-3
CTR 100 320 %
VCE = 5.0 V, IF = ± 1.0 mA SFH620A-1
SFH6206-1
CTR 13 30 %
SFH620A-2
SFH6206-2
CTR 22 45 %
SFH620A-3
SFH6206-3
CTR 34 70 %
SFH620A / SFH6206
Vishay Semiconductors
Switching Characteristics
Typical Characteristics (Tamb = 25 qC unless otherwise specified)
isfh620a_08
RL= 75 Ω
V
CC
= 5 V
47 Ω
I
F
I
C
Figure 1. Switching Times Linear Operation (without saturation)
Parameter Test condition Symbol Min Typ. Max Unit
Turn-on Time R
L
= 75 :, I
F
= 10 mA, VCC = 5.0 V t
on
3.0 Ps
Rise Time R
L
= 75 :, I
F
= 10 mA, VCC = 5.0 V t
r
2.0 Ps
Turn-off Time R
L
= 75 :, I
F
= 10 mA, VCC = 5.0 V t
off
2.3 Ps
Fall Time R
L
= 75 :, I
F
= 10 mA, VCC = 5.0 V t
f
2.0 Ps
Cut-off frequency R
L
= 75 :, I
F
= 10 mA, VCC = 5.0 V f
ctr
250 kHz
Figure 2. Current Transfer Ratio (CTR) vs. Temperature
isfh620a_01
IF= 10 mA, VCE= 5.0 V
Figure 3. Output Characteristics (typ.) Collector Current vs.
Collector-Emitter Voltage
isfh620a_02
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4
Document Number 83675
Rev. 1.5, 26-Oct-04
SFH620A / SFH6206
Document Number 83675
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
5
Figure 4. Diode Forward Voltage (typ.) vs. Forward Current
Figure 5. Transistor Capacitance (typ.) vs. Collector-Emitter
Voltage
Figure 6. Permissible Pulse Handling Capability Forward Current
vs. Pulse Width
isfh620a_03
isfh620a_04
f = 1.0 MHz
isfh620a_05
Pulse cycle
D = parameter,
Figure 7. Permissible Power Dissipation vs. Ambient Temperature
Figure 8. Permissible Diode Forward Current vs. Ambient
Temperature
isfh620a_06
isfh620a_07
SFH620A / SFH6206
Vishay Semiconductors
Package Dimensions in Inches (mm)
Package Dimensions in Inches (mm)
i178027
.255 (6.48)
.268 (6.81)
1
2
4
3
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4°
typ.
.100 (2.54)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
10°
3°–9°
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
.050 (1.27)
ISO Method A
i178029
.255 (6.48)
.268 (6.81)
3 4
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4° typ.
1.00 (2.54)
typ.
.130 (3.30)
.150 (3.81)
.0098 (.249)
.035 (.102)
.020 (.508)
.040 (1.02)
.031 (.79)
typ.
.050 (1.27)
typ.
.010 (.25)
typ.
10
°
3°–7°
.375 (9.52)
.305 (10.03)
.296 (7.52)
.312 (7.90)
.315 (8.00)
min.
Lead
coplanarity
.004 max.
SMD
ISO Method A
.100 (2.54)
R .010 (.25)
.070 (1.78)
.030 (.76)
.315 (8.00) mi
n
.060 (1.52)
.435 (11.05)
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6
Document Number 83675
Rev. 1.5, 26-Oct-04
SFH620A / SFH6206
Document Number 83675
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
7
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.307 (7.8)
.291 (7.4)
.407 (10.36)
.391 (9.96)
Option 6
.315 (8.0)
MIN.
.300 (7.62)
TYP.
.180 (4.6)
.160 (4.1)
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.028 (0.7)
MIN.
Option 7
18487
SFH620A / SFH6206
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 83675
Rev. 1.5, 26-Oct-04
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