VISHAY SFH620A User Manual
SFH620A / SFH6206
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input
Features
• Good CTR Linearity Depending on
Forward Current
• Isolation Test Voltage, 5300 V
• High Collector-emitter Voltage,
V
= 70 V
CEO
• Low Saturation Voltage
• Fast Switching Times
• Low CTR Degradation
• Temperature Stable
• Low Coupling Capacitance
RMS
e3
i179080
A/C
C/A
1
1
2
4
C
E
3
1
• End-Stackable, .100 "(2.54 mm) Spacing
• High Common-Mode Interference Immunity
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code J
• CSA 93751
• BSI IEC60950 IEC60065
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Description
The SFH620A (DIP) and SFH6206 (SMD) feature a
high current transfer ratio, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and
is incorporated in a plastic DIP-4 or SMD package.
The coupling devices are designed for signal transmission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of > 8.0 mm are
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
to an operation voltage of 400 V
RMS
or DC.
Order Information
Part Remarks
SFH620A-1 CTR 40 - 125 %, DIP-4
SFH620A-2 CTR 63 - 200 %, DIP-4
SFH620A-3 CTR 100 - 320 %, DIP-4
SFH6206-1 CTR 40 - 125 %, SMD-4
SFH6206-2 CTR 63 - 200 %, SMD-4
SFH6206-3 CTR 100 - 320 %, SMD-4
SFH620A-1-X006 CTR 40 - 125 %, DIP-4 mil (option 6)
SFH620A-2-X006 CTR 63 - 200 %, DIP-4 mil (option 6)
SFH620A-2-X007 CTR 63 - 200 %, SMD-4 (option 7)
SFH620A-3-X006 CTR 100 - 320 %, DIP-4 mil (option 6)
For additional information on the available options refer to
Option Information.
Document Number 83675
Rev. 1.6, 11-May-05
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1
SFH620A / SFH6206
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
DC Forward current I
Surge forward current t
≤ 10 µsI
p
Power dissipation P
Output
Parameter Test condition Symbol Val ue Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector current I
t
≤ 1.0 ms I
p
Power dissipation P
R
F
FSM
diss
CE
EC
C
C
diss
6.0 V
± 60 mA
± 2.5 A
100 mW
70 V
7.0 V
50 mA
100 mA
150 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage between
emitter and detector, refer to
V
ISO
climate DIN 40046, part 2,
Nov.74
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Insulation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDEO 303, part 1
Isolation resistance V
= 500 V, T
IO
V
= 500 V, T
IO
Storage temperature range T
Ambient temperature range T
Junction temperature T
Soldering temperature max. 10 s. dip soldering
= 25 °C R
amb
= 100 °C R
amb
T
IO
IO
stg
amb
j
sld
distance to seating plane
≥ 1.5 mm
5300 V
≥ 4.0 mm
175
12
≥ 10
11
≥ 10
- 55 to + 150 °C
- 55 to + 100 °C
100 °C
260 °C
RMS
Ω
Ω
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Document Number 83675
Rev. 1.6, 11-May-05
SFH620A / SFH6206
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Capacitance V
Thermal resistance R
= ± 60 mA V
F
= 0 V, f = 1.0 MHz C
R
F
O
thja
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter capacitance V
Thermal resistance R
= 5.0 V, f = 1.0 MHz C
CE
CE
thja
Coupler
Parameter Test condition Part Symbol Min Ty p. Max Unit
Collector-emitter saturation
voltage
Coupling capacitance C
Collector-emitter leakage
current
Note: Still air, coupler soldered to PCB or base
= 10 mA, IC = 2.5 mA V
I
F
V
= 10 V SFH620A-1
CE
SFH6206-1
SFH620A-2
SFH6206-2
SFH620A-3
SFH6206-3
CEsat
I
CEO
I
CEO
I
CEO
C
1.25 1.65 V
50 pF
750 °C/W
6.8 pF
500 °C/W
0.25 0.4 V
0.2 pF
2.0 50 nA
2.0 50 nA
5.0 100 nA
Current Transfer Ratio
Parameter Test condition Part Symbol Min Ty p. Max Unit
I
C/IF
Document Number 83675
Rev. 1.6, 11-May-05
VCE = 5.0 V, IF = ± 10 mA SFH620A-1
= 5.0 V, IF = ± 1.0 mA SFH620A-1
V
CE
SFH6206-1
SFH620A-2
SFH6206-2
SFH620A-3
SFH6206-3
SFH6206-1
SFH620A-2
SFH6206-2
SFH620A-3
SFH6206-3
CTR 40 125 %
CTR 63 200 %
CTR 100 320 %
CTR 13 30 %
CTR 22 45 %
CTR 34 70 %
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