SFH620A / SFH6206
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input
Features
• Good CTR Linearity Depending on
Forward Current
• Isolation Test Voltage, 5300 V
• High Collector-emitter Voltage,
V
= 70 V
CEO
• Low Saturation Voltage
• Fast Switching Times
• Low CTR Degradation
• Temperature Stable
• Low Coupling Capacitance
RMS
e3
i179080
A/C
C/A
1
1
2
4
C
E
3
1
• End-Stackable, .100 "(2.54 mm) Spacing
• High Common-Mode Interference Immunity
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code J
• CSA 93751
• BSI IEC60950 IEC60065
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Description
The SFH620A (DIP) and SFH6206 (SMD) feature a
high current transfer ratio, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and
is incorporated in a plastic DIP-4 or SMD package.
The coupling devices are designed for signal transmission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of > 8.0 mm are
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
to an operation voltage of 400 V
RMS
or DC.
Order Information
Part Remarks
SFH620A-1 CTR 40 - 125 %, DIP-4
SFH620A-2 CTR 63 - 200 %, DIP-4
SFH620A-3 CTR 100 - 320 %, DIP-4
SFH6206-1 CTR 40 - 125 %, SMD-4
SFH6206-2 CTR 63 - 200 %, SMD-4
SFH6206-3 CTR 100 - 320 %, SMD-4
SFH620A-1-X006 CTR 40 - 125 %, DIP-4 mil (option 6)
SFH620A-2-X006 CTR 63 - 200 %, DIP-4 mil (option 6)
SFH620A-2-X007 CTR 63 - 200 %, SMD-4 (option 7)
SFH620A-3-X006 CTR 100 - 320 %, DIP-4 mil (option 6)
For additional information on the available options refer to
Option Information.
Document Number 83675
Rev. 1.6, 11-May-05
www.vishay.com
1
SFH620A / SFH6206
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
DC Forward current I
Surge forward current t
≤ 10 µsI
p
Power dissipation P
Output
Parameter Test condition Symbol Val ue Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector current I
t
≤ 1.0 ms I
p
Power dissipation P
R
F
FSM
diss
CE
EC
C
C
diss
6.0 V
± 60 mA
± 2.5 A
100 mW
70 V
7.0 V
50 mA
100 mA
150 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage between
emitter and detector, refer to
V
ISO
climate DIN 40046, part 2,
Nov.74
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Insulation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDEO 303, part 1
Isolation resistance V
= 500 V, T
IO
V
= 500 V, T
IO
Storage temperature range T
Ambient temperature range T
Junction temperature T
Soldering temperature max. 10 s. dip soldering
= 25 °C R
amb
= 100 °C R
amb
T
IO
IO
stg
amb
j
sld
distance to seating plane
≥ 1.5 mm
5300 V
≥ 4.0 mm
175
12
≥ 10
11
≥ 10
- 55 to + 150 °C
- 55 to + 100 °C
100 °C
260 °C
RMS
Ω
Ω
www.vishay.com
2
Document Number 83675
Rev. 1.6, 11-May-05
SFH620A / SFH6206
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Capacitance V
Thermal resistance R
= ± 60 mA V
F
= 0 V, f = 1.0 MHz C
R
F
O
thja
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter capacitance V
Thermal resistance R
= 5.0 V, f = 1.0 MHz C
CE
CE
thja
Coupler
Parameter Test condition Part Symbol Min Ty p. Max Unit
Collector-emitter saturation
voltage
Coupling capacitance C
Collector-emitter leakage
current
Note: Still air, coupler soldered to PCB or base
= 10 mA, IC = 2.5 mA V
I
F
V
= 10 V SFH620A-1
CE
SFH6206-1
SFH620A-2
SFH6206-2
SFH620A-3
SFH6206-3
CEsat
I
CEO
I
CEO
I
CEO
C
1.25 1.65 V
50 pF
750 °C/W
6.8 pF
500 °C/W
0.25 0.4 V
0.2 pF
2.0 50 nA
2.0 50 nA
5.0 100 nA
Current Transfer Ratio
Parameter Test condition Part Symbol Min Ty p. Max Unit
I
C/IF
Document Number 83675
Rev. 1.6, 11-May-05
VCE = 5.0 V, IF = ± 10 mA SFH620A-1
= 5.0 V, IF = ± 1.0 mA SFH620A-1
V
CE
SFH6206-1
SFH620A-2
SFH6206-2
SFH620A-3
SFH6206-3
SFH6206-1
SFH620A-2
SFH6206-2
SFH620A-3
SFH6206-3
CTR 40 125 %
CTR 63 200 %
CTR 100 320 %
CTR 13 30 %
CTR 22 45 %
CTR 34 70 %
www.vishay.com
3
SFH620A / SFH6206
Vishay Semiconductors
I
F
RL=75Ω
I
C
V
=5V
CC
47 Ω
isfh620a_08
Figure 1. Switching Times Linear Operation (without saturation)
Switching Characteristics
Parameter Te s t co n di t io n Symbol Min Ty p. Max Unit
Turn-on Time R
Rise Time R
Turn-off Time R
Fall Time R
Cut-off frequency R
= 75 Ω, IF = 10 mA, VCC = 5.0 V t
L
= 75 Ω, IF = 10 mA, VCC = 5.0 V t
L
= 75 Ω, IF = 10 mA, VCC = 5.0 V t
L
= 75 Ω, IF = 10 mA, VCC = 5.0 V t
L
= 75 Ω, IF = 10 mA, VCC = 5.0 V f
L
on
r
off
f
ctr
3.0 µs
2.0 µs
2.3 µs
2.0 µs
250 kHz
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
IF= 10 mA, VCE= 5.0 V
isfh620a_01
Figure 2. Current Transfer Ratio (CTR) vs. Temperature
www.vishay.com
4
isfh620a_02
Figure 3. Output Characteristics (typ.) Collector Current vs.
Collector-Emitter Voltage
Document Number 83675
Rev. 1.6, 11-May-05
SFH620A / SFH6206
Vishay Semiconductors
isfh620a_03
Figure 4. Diode Forward Voltage (typ.) vs. Forward Current
f = 1.0 MHz
isfh620a_04
Figure 5. Transistor Capacitance (typ.) vs. Collector-Emitter
Voltage
isfh620a_06
Figure 7. Permissible Power Dissipation vs. Ambient Temperature
isfh620a_07
Figure 8. Permissible Diode Forward Current vs. Ambient
Temperature
Pulse cycle
D = parameter,
isfh620a_05
Figure 6. Permissible Pulse Handling Capability Forward Current
vs. Pulse Width
Document Number 83675
Rev. 1.6, 11-May-05
www.vishay.com
5
SFH620A / SFH6206
Vishay Semiconductors
Package Dimensions in Inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
3
4
.179 (4.55)
.190 (4.83)
.031 (.79) typ.
.050 (1.27) typ.
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
.050 (1.27)
.100 (2.54)
i178027
.030 (.76)
.045 (1.14)
4°
typ.
.018 (.46)
.022 (.56)
ISO Method A
.300 (7.62) typ.
10°
3°–9°
.008 (.20)
.012 (.30)
.230 (5.84)
.250 (6.35)
.110 (2.79)
.130 (3.30)
Package Dimensions in Inches (mm)
SMD
.255 (6.48)
.268 (6.81)
34
.179 (4.55)
.190 (4.83)
ISO Method A
i178029
.030 (.76)
.045 (1.14)
4° typ.
1.00 (2.54)typ.
.050 (1.27)
typ.
.031 (.79)
typ.
.130 (3.30)
.150 (3.81)
.0098 (.249)
.035 (.102)
pin one ID
coplanarity
.004 max.
Lead
.100 (2.54)
R .010 (.25)
.315 (8.00) mi
.435 (11.05)
.375 (9.52)
.395 (10.03)
.296 (7.52)
.312 (7.90)
°
10
.315 (8.00)
min.
.020 (.508)
.040 (1.02)
.030 (.76)
.070 (1.78)
n
.060 (1.52)
.010 (.25)
typ.
3°–7°
www.vishay.com
6
Document Number 83675
Rev. 1.6, 11-May-05
SFH620A / SFH6206
Vishay Semiconductors
18487
Option 6
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.028 (0.7)
MIN.
Option 7
.300 (7.62)
TYP.
.315 (8.0)
MIN.
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.180 (4.6)
.160 (4.1)
Document Number 83675
Rev. 1.6, 11-May-05
www.vishay.com
7
SFH620A / SFH6206
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
8
Document Number 83675
Rev. 1.6, 11-May-05
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Loading...