VISHAY SFH618A, SFH6186 User Manual
SFH618A / SFH6186
Vishay Semiconductors
Optocoupler, Phototransistor Output, Low Input Current
Features
• Good CTR Linearity Depending on
Forward Current
• Low CTR Degradation
•
High Collector-emitter Voltage, V
• Isolation Test Voltage, 5300 V
CEO
RMS
= 55 V
• Low Coupling Capacitance
• End-Stackable, 0.100 " (2.54 mm) Spacing
• High Common-mode Interference Immunity
• Lead (Pb)-free component
e3
i179061
1
A
1
C
2
C
4
E
3
1
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CSA 93751
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
Telecom
Industrial Controls
Battery Powered Equipment
Office Machines
Description
The SFH618A (DIP) and SFH6186 (SMD) feature a
high current transfer ratio, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared diode emitter, which is optically coupled to silicon planar phototransistor detector, and is
incorporated in a plastic DIP-4 or SMD package.
The coupling devices are designed for signal transmission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of > 8.0 mm
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
to an operation voltage of 400 V
RMS
or DC.
Order Information
Part Remarks
SFH618A-2 CTR 63 - 125 %, DIP-4
SFH618A-3 CTR 100 - 200 %, DIP-4
SFH618A-4 CTR 160 - 320 %, DIP-4
SFH618A-5 CTR 250 - 500 %, DIP-4
SFH6186-2 CTR 63 - 125 %, SMD-4
SFH6186-3 CTR 100 - 200 %, SMD-4
SFH6186-4 CTR 160 - 320 %, SMD-4
SFH6186-5 CTR 250 - 500 %, SMD-4
SFH618A-3X006 CTR 100 - 200 %, DIP-4 400 mil (option 6)
SFH618A-3X007 CTR 100 - 200 %, SMD-4 (option 7)
SFH618A-4X006 CTR 160 - 320 %, DIP-4 400 mil (option 6)
SFH618A-5X006 CTR 250 - 500 %, DIP-4 400 mil (option 6)
SFH618A-5X007 CTR 250 - 500 %, SMD-4 (option 7)
For additional information on the available options refer to
Option Information.
Document Number 83673
Rev. 1.7, 11-May-05
www.vishay.com
1
SFH618A / SFH6186
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
Power dissipation P
Forward current I
Output
Parameter Test condition Symbol Val ue Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector current I
t
≤ 1.0 ms I
p
Power dissipation P
R
diss
F
CE
EC
C
C
diss
6.0 V
mW
60 mA
55 V
7.0 V
50 mA
100 mA
150 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage between
emitter and detector, refer to
V
ISO
Climate DIN 40046, part2,
Nov.74
Creepage distance ≥ 7.0 mm
Clearance ≥ 7.0 mm
Insulation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDEO 303, part 1
Isolation resistance V
= 500 V, T
IO
V
= 500 V, T
IO
Storage temperature range T
Ambient temperature range T
Junction temperature T
Soldering temperature max. 10 s. Dip Soldering
distance to seating plane
= 25 °C R
amb
= 100 °C R
amb
T
IO
IO
stg
amb
j
sld
≥ 1.5 mm
5300 V
≥ 0.4 mm
175
12
≥ 10
11
≥ 10
- 55 to +150 °C
- 55 to +100 °C
100 °C
260 °C
RMS
Ω
Ω
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Document Number 83673
Rev. 1.7, 11-May-05
SFH618A / SFH6186
Vishay Semiconductors
200
150
Detector
100
LED
50
tot
P –Power Dissipation (mW)
0
0 20406080 100 120
T
– Ambient Temperature ( C )
19386
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
amb
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Capacitance V
Thermal resistance R
= 5.0 mA V
F
= 6.0 V I
R
= 0 V, f = 1.0 MHz C
R
F
R
O
thja
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter leakage
= 10 V I
V
CE
CEO
current
Collector-emitter capacitance V
Thermal resistance R
= 5.0 V, f = 1.0 MHz C
CE
CE
thja
Coupler
Parameter Test condition Par t Symbol Min Ty p. Max Unit
Collector-emitter saturation
voltage
Coupling capacitance C
= 0.32 mA, IF = 1.0 mA SFH618A-2
I
C
= 0.5 mA, IF = 1.0 mA SFH618A-3
I
C
= 1.25 mA, IF = 1.0 mA SFH618A-4
I
C
SFH6186-2
SFH6186-3
SFH6186-4
= 0.8 mA, IF = 1.0 mA SFH618A-5
I
C
SFH6186-5
V
V
V
V
CEsat
CEsat
CEsat
CEsat
C
1.1 1.5 V
.01 10 µA
25 pF
1070 K/W
10 200 nA
7pF
500 K/W
0.25 0.4 V
0.25 0.4 V
0.25 0.4 V
0.25 0.4 V
0.25 pF
Document Number 83673
Rev. 1.7, 11-May-05
www.vishay.com
3
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