SFH618A / SFH6186
Vishay Semiconductors
Optocoupler, Phototransistor Output, Low Input Current
Features
• Good CTR Linearity Depending on
Forward Current
• Low CTR Degradation
•
High Collector-emitter Voltage, V
• Isolation Test Voltage, 5300 V
CEO
RMS
= 55 V
• Low Coupling Capacitance
• End-Stackable, 0.100 " (2.54 mm) Spacing
• High Common-mode Interference Immunity
• Lead (Pb)-free component
e3
i179061
1
A
1
C
2
C
4
E
3
1
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CSA 93751
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
Telecom
Industrial Controls
Battery Powered Equipment
Office Machines
Description
The SFH618A (DIP) and SFH6186 (SMD) feature a
high current transfer ratio, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared diode emitter, which is optically coupled to silicon planar phototransistor detector, and is
incorporated in a plastic DIP-4 or SMD package.
The coupling devices are designed for signal transmission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of > 8.0 mm
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
to an operation voltage of 400 V
RMS
or DC.
Order Information
Part Remarks
SFH618A-2 CTR 63 - 125 %, DIP-4
SFH618A-3 CTR 100 - 200 %, DIP-4
SFH618A-4 CTR 160 - 320 %, DIP-4
SFH618A-5 CTR 250 - 500 %, DIP-4
SFH6186-2 CTR 63 - 125 %, SMD-4
SFH6186-3 CTR 100 - 200 %, SMD-4
SFH6186-4 CTR 160 - 320 %, SMD-4
SFH6186-5 CTR 250 - 500 %, SMD-4
SFH618A-3X006 CTR 100 - 200 %, DIP-4 400 mil (option 6)
SFH618A-3X007 CTR 100 - 200 %, SMD-4 (option 7)
SFH618A-4X006 CTR 160 - 320 %, DIP-4 400 mil (option 6)
SFH618A-5X006 CTR 250 - 500 %, DIP-4 400 mil (option 6)
SFH618A-5X007 CTR 250 - 500 %, SMD-4 (option 7)
For additional information on the available options refer to
Option Information.
Document Number 83673
Rev. 1.7, 11-May-05
www.vishay.com
1
SFH618A / SFH6186
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
Power dissipation P
Forward current I
Output
Parameter Test condition Symbol Val ue Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector current I
t
≤ 1.0 ms I
p
Power dissipation P
R
diss
F
CE
EC
C
C
diss
6.0 V
mW
60 mA
55 V
7.0 V
50 mA
100 mA
150 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage between
emitter and detector, refer to
V
ISO
Climate DIN 40046, part2,
Nov.74
Creepage distance ≥ 7.0 mm
Clearance ≥ 7.0 mm
Insulation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDEO 303, part 1
Isolation resistance V
= 500 V, T
IO
V
= 500 V, T
IO
Storage temperature range T
Ambient temperature range T
Junction temperature T
Soldering temperature max. 10 s. Dip Soldering
distance to seating plane
= 25 °C R
amb
= 100 °C R
amb
T
IO
IO
stg
amb
j
sld
≥ 1.5 mm
5300 V
≥ 0.4 mm
175
12
≥ 10
11
≥ 10
- 55 to +150 °C
- 55 to +100 °C
100 °C
260 °C
RMS
Ω
Ω
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2
Document Number 83673
Rev. 1.7, 11-May-05
SFH618A / SFH6186
Vishay Semiconductors
200
150
Detector
100
LED
50
tot
P –Power Dissipation (mW)
0
0 20406080 100 120
T
– Ambient Temperature ( C )
19386
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
amb
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Capacitance V
Thermal resistance R
= 5.0 mA V
F
= 6.0 V I
R
= 0 V, f = 1.0 MHz C
R
F
R
O
thja
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter leakage
= 10 V I
V
CE
CEO
current
Collector-emitter capacitance V
Thermal resistance R
= 5.0 V, f = 1.0 MHz C
CE
CE
thja
Coupler
Parameter Test condition Par t Symbol Min Ty p. Max Unit
Collector-emitter saturation
voltage
Coupling capacitance C
= 0.32 mA, IF = 1.0 mA SFH618A-2
I
C
= 0.5 mA, IF = 1.0 mA SFH618A-3
I
C
= 1.25 mA, IF = 1.0 mA SFH618A-4
I
C
SFH6186-2
SFH6186-3
SFH6186-4
= 0.8 mA, IF = 1.0 mA SFH618A-5
I
C
SFH6186-5
V
V
V
V
CEsat
CEsat
CEsat
CEsat
C
1.1 1.5 V
.01 10 µA
25 pF
1070 K/W
10 200 nA
7pF
500 K/W
0.25 0.4 V
0.25 0.4 V
0.25 0.4 V
0.25 0.4 V
0.25 pF
Document Number 83673
Rev. 1.7, 11-May-05
www.vishay.com
3
SFH618A / SFH6186
isfh618a_12
10%
90%
Input Pulse
Output Pulse
t
r
t
on
t
f
t
off
Vishay Semiconductors
Current Transfer Ratio
Parameter Test condition Par t Symbol Min Ty p. Max Unit
I
C/IF
Switching Characteristics
Typical
Parameter Test condition Symbol Min Ty p. Max Unit
Turn-on time V
Rise time V
Turn-off time V
Fall time V
IF = 1.0 mA, VCE = 0.5 V SFH618A-2
= 0.5 mA, VCE = 1.5 V SFH618A-2
I
F
= 1.0 mA, VCE = 0.5 V SFH618A-3
I
F
= 0.5 mA, VCE = 1.5 V SFH618A-3
I
F
= 1.0 mA, VCE = 0.5 V SFH618A-4
I
F
= 0.5 mA, VCE = 1.5 V SFH618A-4
I
F
= 1.0 mA, VCE = 0.5 V SFH618A-5
I
F
= 0.5 mA, VCE = 1.5 V SFH618A-5
I
F
= 5.0 V, IC = 2.0 mA,
CC
= 100 Ω
R
L
= 5.0 V, IC = 2.0 mA,
CC
= 100 Ω
R
L
= 5.0 V, IC = 2.0 mA,
CC
= 100 Ω
R
L
= 5.0 V, IC = 2.0 mA,
CC
= 100 Ω
R
L
SFH6186-2
SFH6186-2
SFH6186-3
SFH6186-3
SFH6186-4
SFH6186-4
SFH6186-5
SFH6186-5
t
on
t
r
t
off
t
f
CTR 63 125 %
CTR 32 75 %
CTR 100 200 %
CTR 50 120 %
CTR 160 320 %
CTR 80 200 %
CTR 250 500 %
CTR 125 300 %
6.0 µs
3.5 µs
5.5 µs
5.0 µs
INPUT
isfh618a_10
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4
VCC=5V
R
L
V
OUT
Figure 2. Test Circuit
Figure 3. Test Circuit and Waveforms
Document Number 83673
Rev. 1.7, 11-May-05
SFH618A / SFH6186
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
isfh618a_01
VCE= 0.5 V, CTR=f(TA)
Figure 4. Current Transfer Ratio (typ.)
VCE= 0.5 V, CTR=f(TA)
isfh618a_04
IF= 1.0 mA, VF=f(TA)
Figure 7. Diode Forward Voltage (typ.)
TA= 25°C, f = 1.0 MHz,
CEE=f(VCE)
isfh618a_02
isfh618a_03
isfh618a_01
Figure 5. Current Transfer Ratio (typ.)
TA= 25°C, VF=f(IF)
Figure 6. Diode Forward Voltage (typ.)
isfh618a_05
isfh618a_06
Figure 8. Transistor Capacitance
TA= 25°C,
CE=f
(VCE,IF)
Figure 9. Output Characteristics
Document Number 83673
Rev. 1.7, 11-May-05
www.vishay.com
5
SFH618A / SFH6186
Vishay Semiconductors
TA= 25°C, IF= 1.0 mA,
VCC= 5.0 V, tON,tR,
t
,=f(RL)
OFF,tF
isfh618a_09
Figure 10. Switching times (typ.)
Package Dimensions in Inches (mm)
i178027
.255 (6.48)
.268 (6.81)
.030 (.76)
.045 (1.14)
4°
typ.
.018 (.46)
.022 (.56)
2
1
3
4
.179 (4.55)
.190 (4.83)
pin one ID
.031 (.79) typ.
.050 (1.27) typ.
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
.050 (1.27)
.100 (2.54)
ISO Method A
.300 (7.62) typ.
10°
3°–9°
.008 (.20)
.012 (.30)
.230 (5.84)
.250 (6.35)
.110 (2.79)
.130 (3.30)
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6
Document Number 83673
Rev. 1.7, 11-May-05
Package Dimensions in Inches (mm)
SFH618A / SFH6186
Vishay Semiconductors
ISO Method A
i178029
SMD
.255 (6.48)
.268 (6.81)
.030 (.76)
.045 (1.14)
4° typ.
1.00 (2.54)typ.
.050 (1.27)
typ.
Option 6
34
.179 (4.55)
.190 (4.83)
pin one ID
.031 (.79)
typ.
.130 (3.30)
.150 (3.81)
.0098 (.249)
.035 (.102)
Lead
coplanarity
.004 max.
.100 (2.54)
Option 7
R .010 (.25)
.315 (8.00) mi
.435 (11.05)
.375 (9.52)
.395 (10.03)
.296 (7.52)
.312 (7.90)
°
10
.315 (8.00)
min.
.020 (.508)
.040 (1.02)
.030 (.76)
.070 (1.78)
n
.060 (1.52)
.010 (.25)
typ.
3°–7°
18487
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.028 (0.7)
MIN.
.300 (7.62)
TYP.
.315 (8.0)
MIN.
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.180 (4.6)
.160 (4.1)
Document Number 83673
Rev. 1.7, 11-May-05
www.vishay.com
7
SFH618A / SFH6186
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
8
Document Number 83673
Rev. 1.7, 11-May-05
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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