VISHAY
SFH617A
Vishay Semiconductors
Optocoupler, High Reliability, 5300 V
Features
• Good CTR Linearity Depending on
Forward Current
• Isolation Test Voltage, 5300 V
• High Collector-Emitter Voltage, V
• Low Saturation Voltage
• Fast Switching Times
• Low CTR Degradation
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100 " (2.54 mm) Spacing
• High Common-Mode Interference Immunity
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• CSA 93751
Description
The SFH617A (DIP) feature a high current transfer
ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a
plastic DIP-4 package.
The coupling devices are designed for signal transmission between two electrically separated circuits.
RMS
CEO
= 70 V
A
C
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of > 8.0 mm are
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
up to an operation voltage of 400 V
ifications subject to change.
Order Information
SFH617A-1 CTR 40 - 80 %, DIP-4
SFH617A-2 CTR 63 - 125 %, DIP-4
SFH617A-3 CTR 100 - 200 %, DIP-4
SFH617A-4 CTR 160 - 320 %, DIP-4
SFH617A-1X006 CTR 40 - 80 %, DIP-4 400 mil (option 6)
SFH617A-2X006 CTR 63 - 125 %, DIP-4 400 mil (option 6)
SFH617A-2X009 CTR 63 - 125 %, SMD-4 (option 9)
SFH617A-3X006 CTR 100 - 200 %, DIP-4 400 mil (option 6)
SFH617A-3X007 CTR 100 - 200 %, SMD-4 (option 7)
SFH617A-4X006 CTR 160 - 320 %, DIP-4 400 mil (option 6)
For additional information on the available options refer to
Option Information.
RMS
C
1
2
Part Remarks
4
3
E
17907
RMS
e3
Pb
Pb-free
or DC. Spec-
Document Number 83740
Rev. 1.4, 26-Oct-04
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1
SFH617A
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
DC Forward current I
Surge forward current t ≤ 10 µsI
Power dissipation P
R
F
FSM
diss
6.0 V
60 mA
2.5 A
100 mW
Output
Parameter Test condition Symbol Val ue Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector current I
t ≤ 1.0 ms I
Power dissipation P
CE
EC
C
C
diss
70 V
7.0 V
50 mA
100 mA
150 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage between
emitter and detector, refer to
V
ISO
climate DIN 40046, part 2,
Nov. 74
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Insulation thickness between
emitter and detector
Comparative Tracking index per
DIN IEC 112/VDEO 303, part 1
Isolation resistance V
= 500 V, T
IO
V
= 500 V, T
IO
Storage temperature range T
Ambient temperature range T
Junction temperature T
Soldering temperature max. 10 s. dip soldering
= 25 °C R
amb
= 100 °C R
amb
T
IO
IO
stg
amb
j
sld
distance to seating plane
≥ 1.5 mm
5300 V
≥ 0.4 mm
≥ 175
12
≥ 10
11
≥ 10
- 55 to + 150 °C
- 55 to + 100 °C
100 °C
260 °C
RMS
Ω
Ω
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2
Document Number 83740
Rev. 1.4, 26-Oct-04
VISHAY
200
150
SFH617A
Vishay Semiconductors
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
100
50
tot
P –Power Dissipation (mW)
18483
Diode
0
0 25 50 75 100 125 150
T
– Ambient Temperature ( qC )
amb
Phototransistor
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
(IR GaAs)
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Capacitance V
= 60 mA V
F
= 6.0 V I
R
= 0 V, f = 1.0 MHz C
R
Thermal resistance R
F
R
O
thja
1.25 1.65 V
0.01 10 µA
13 pF
750 K/W
Output
(Si Phototransistor)
Parameter Test condition Part Symbol Min Ty p. Max Unit
Collector-emitter capacitance V
= 5 V, f = 1.0 MHz C
CE
Thermal resistance R
Collector-emitter leakage
V
= 10 V SFH617A-1 I
CE
current
SFH617A-2 I
SFH617A-3 I
SFH617A-4 I
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter saturation
voltage
Coupling capacitance C
Document Number 83740
Rev. 1.4, 26-Oct-04
= 10 mA, f = 1.0 MHz V
I
F
CEsat
C
CE
thja
CEO
CEO
CEO
CEO
5.2 pF
500 K/W
2.0 50 nA
2.0 50 nA
5.0 100 nA
5.0 100 nA
0.4 0.25 V
0.4 pF
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SFH617A
Vishay Semiconductors
Current Transfer Ratio
Parameter Test condition Part Symbol Min Ty p. Max Unit
I
C/IF
Switching Characteristics
Without Saturation
Parameter Te s t co n di t io n Symbol Min Ty p . Max Unit
Turn-on time I
Rise time I
Turn-off time I
Fall time I
Cut-off frequency I
With Saturation
Parameter Te s t co n di t io n Par t Symbol Min Ty p. Max Unit
Turn-on time I
Rise time I
Turn-off time I
Fall time I
= 10 mA, VCC = 5.0 V, RL = 75 Ω t
F
= 10 mA, VCC = 5.0 V, RL = 75 Ω t
F
= 10 mA, VCC = 5.0 V, RL = 75 Ω t
F
= 10 mA, VCC = 5.0 V, RL = 75 Ω t
F
= 10 mA, VCC = 5.0 V, f
F
= 20 mA SFH617A-1 t
F
I
= 10 mA SFH617A-2 t
F
I
= 5.0 mA SFH617A-4 t
F
= 20 mA SFH617A-1 t
F
I
= 10 mA SFH617A-2 t
F
I
= 5.0 mA SFH617A-4 t
F
= 20 mA SFH617A-1 t
F
= 10 mA SFH617A-2 t
I
F
I
= 5.0 mA SFH617A-4 t
F
= 20 mA SFH617A-1 t
F
I
= 10 mA SFH617A-2 t
F
I
= 5.0 mA SFH617A-4 t
F
IF = 10 mA, VCE = 5.0 V SFH617A-1 CTR 40 80 %
SFH617A-2 CTR 63 125 %
SFH617A-3 CTR 100 200 %
SFH617A-4 CTR 160 320 %
= 1.0 mA, VCE = 5.0 V SFH617A-1 CTR 13 30 %
I
F
SFH617A-2 CTR 22 45 %
SFH617A-3 CTR 34 70 %
SFH617A-4 CTR 56 90 %
on
r
off
f
ctr
SFH617A-3 t
SFH617A-3 t
SFH617A-3 t
SFH617A-3 t
on
on
on
on
r
r
r
r
off
off
off
off
f
f
f
f
3.0 µs
2.0 µs
2.3 µs
2.0 µs
250 kHz
3.0 µs
4.2 µs
4.2 µs
6.0 µs
2.0 µs
3.0 µs
3.0 µs
4.6 µs
18 µs
23 µs
23 µs
25 µs
11 µs
14 µs
14 µs
15 µs
VISHAY
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Document Number 83740
Rev. 1.4, 26-Oct-04
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
SFH617A
I
F
RL=75Ω
I
C
47 Ω
isfh610a_01
Figure 2. Linear Operation ( without Saturation)
I
F
1.0 kΩ
47 Ω
V
=5V
CC
isfh610a_04
Figure 5. Output Characteristics (typ.) Collector Current vs.
Collector-Emitter Voltage
VF=f(IF)
V
=5V
CC
isfh610a_02
Figure 3. Switching Operation (with Saturation)
IF= 10 mA, VCC= 5.0 V
isfh610a_03
Figure 4. Current Transfer Ratio (CTR) vs. Temperature
Document Number 83740
Rev. 1.4, 26-Oct-04
isfh610a_05
Figure 6. Diode Forward Voltage vs. Forward Current
f = 1.0 MHz
isfh610a_06
Figure 7. Transistor Capacitance (typ.) vs. Collector-Emitter
Voltage
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SFH617A
Vishay Semiconductors
Pulse cycle
D = parameter,
P
tot
VISHAY
=f(TA)
isfh610a_07
Figure 8. Permissible Pulse Handling Capability Forward Current
vs. Pulse Width
Package Dimensions in Inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
3
4
.179 (4.55)
.190 (4.83)
.031 (.79) typ.
.050 (1.27) typ.
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
.050 (1.27)
.100 (2.54)
i178027
.030 (.76)
.045 (1.14)
4°
typ.
.018 (.46)
.022 (.56)
isfh610a_08
Figure 9. Permissible Power Dissipation vs. Temperature
ISO Method A
.300 (7.62) typ.
10°
3°–9°
.008 (.20)
.012 (.30)
.230 (5.84)
.250 (6.35)
.110 (2.79)
.130 (3.30)
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Document Number 83740
Rev. 1.4, 26-Oct-04
VISHAY
SFH617A
Vishay Semiconductors
Option 6
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.028 (0.7)
MIN.
Option 7
.300 (7.62)
TYP.
.315 (8.0)
MIN.
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
.012 (.30) typ.
15° max.
18450
Document Number 83740
Rev. 1.4, 26-Oct-04
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7
SFH617A
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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8
Document Number 83740
Rev. 1.4, 26-Oct-04
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