VISHAY SFH617A User Manual
VISHAY
SFH617A
Vishay Semiconductors
Optocoupler, High Reliability, 5300 V
Features
• Good CTR Linearity Depending on
Forward Current
• Isolation Test Voltage, 5300 V
• High Collector-Emitter Voltage, V
• Low Saturation Voltage
• Fast Switching Times
• Low CTR Degradation
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100 " (2.54 mm) Spacing
• High Common-Mode Interference Immunity
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• CSA 93751
Description
The SFH617A (DIP) feature a high current transfer
ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a
plastic DIP-4 package.
The coupling devices are designed for signal transmission between two electrically separated circuits.
RMS
CEO
= 70 V
A
C
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of > 8.0 mm are
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
up to an operation voltage of 400 V
ifications subject to change.
Order Information
SFH617A-1 CTR 40 - 80 %, DIP-4
SFH617A-2 CTR 63 - 125 %, DIP-4
SFH617A-3 CTR 100 - 200 %, DIP-4
SFH617A-4 CTR 160 - 320 %, DIP-4
SFH617A-1X006 CTR 40 - 80 %, DIP-4 400 mil (option 6)
SFH617A-2X006 CTR 63 - 125 %, DIP-4 400 mil (option 6)
SFH617A-2X009 CTR 63 - 125 %, SMD-4 (option 9)
SFH617A-3X006 CTR 100 - 200 %, DIP-4 400 mil (option 6)
SFH617A-3X007 CTR 100 - 200 %, SMD-4 (option 7)
SFH617A-4X006 CTR 160 - 320 %, DIP-4 400 mil (option 6)
For additional information on the available options refer to
Option Information.
RMS
C
1
2
Part Remarks
4
3
E
17907
RMS
e3
Pb
Pb-free
or DC. Spec-
Document Number 83740
Rev. 1.4, 26-Oct-04
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SFH617A
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
DC Forward current I
Surge forward current t ≤ 10 µsI
Power dissipation P
R
F
FSM
diss
6.0 V
60 mA
2.5 A
100 mW
Output
Parameter Test condition Symbol Val ue Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector current I
t ≤ 1.0 ms I
Power dissipation P
CE
EC
C
C
diss
70 V
7.0 V
50 mA
100 mA
150 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage between
emitter and detector, refer to
V
ISO
climate DIN 40046, part 2,
Nov. 74
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Insulation thickness between
emitter and detector
Comparative Tracking index per
DIN IEC 112/VDEO 303, part 1
Isolation resistance V
= 500 V, T
IO
V
= 500 V, T
IO
Storage temperature range T
Ambient temperature range T
Junction temperature T
Soldering temperature max. 10 s. dip soldering
= 25 °C R
amb
= 100 °C R
amb
T
IO
IO
stg
amb
j
sld
distance to seating plane
≥ 1.5 mm
5300 V
≥ 0.4 mm
≥ 175
12
≥ 10
11
≥ 10
- 55 to + 150 °C
- 55 to + 100 °C
100 °C
260 °C
RMS
Ω
Ω
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Document Number 83740
Rev. 1.4, 26-Oct-04
VISHAY
200
150
SFH617A
Vishay Semiconductors
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
100
50
tot
P –Power Dissipation (mW)
18483
Diode
0
0 25 50 75 100 125 150
T
– Ambient Temperature ( qC )
amb
Phototransistor
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
(IR GaAs)
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Capacitance V
= 60 mA V
F
= 6.0 V I
R
= 0 V, f = 1.0 MHz C
R
Thermal resistance R
F
R
O
thja
1.25 1.65 V
0.01 10 µA
13 pF
750 K/W
Output
(Si Phototransistor)
Parameter Test condition Part Symbol Min Ty p. Max Unit
Collector-emitter capacitance V
= 5 V, f = 1.0 MHz C
CE
Thermal resistance R
Collector-emitter leakage
V
= 10 V SFH617A-1 I
CE
current
SFH617A-2 I
SFH617A-3 I
SFH617A-4 I
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter saturation
voltage
Coupling capacitance C
Document Number 83740
Rev. 1.4, 26-Oct-04
= 10 mA, f = 1.0 MHz V
I
F
CEsat
C
CE
thja
CEO
CEO
CEO
CEO
5.2 pF
500 K/W
2.0 50 nA
2.0 50 nA
5.0 100 nA
5.0 100 nA
0.4 0.25 V
0.4 pF
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