Page 1
SFH615A/SFH6156
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Reliability,
5300 V
RMS
Features
• Excellent CTR Linearity Depending on
Forward Current
• Isolation Test Voltage, 5300 V
RMS
e3
• Fast Switching Times
• Low CTR Degradation
• Low Coupling Capacitance
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
• Switchmode power supply
• Telecom
• Battery powered equipment
Description
The SFH615A (DIP) and SFH6156 (SMD) feature a
variety of transfer ratios, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and
is incorporated in a plastic DIP-4 or SMD package.
The coupling devices are designed for signal transmission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of > 8.0 mm are
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
up to an operation voltage of 400 V
Specifications subject to change.
RMS
or DC.
1
C
4
3
E
1
17448
A
1
C
2
Order Information
Part Remarks
SFH615A-1 CTR 40 - 80 %, DIP-4
SFH615A-2 CTR 63 - 125 %, DIP-4
SFH615A-3 CTR 100 - 200 %, DIP-4
SFH615A-4 CTR 160 - 320 %, DIP-4
SFH6156-1 CTR 40 - 80 %, SMD-4
SFH6156-2 CTR 63 - 125 %, SMD-4
SFH6156-3 CTR 100 - 200 %, SMD-4
SFH6156-4 CTR 160 - 320 %, SMD-4
SFH615A-1X006 CTR 40 - 80 %, DIP-4 400 mil (option 6)
SFH615A-1X007 CTR 40 - 80 %, SMD-4 (option 7)
SFH615A-2X006 CTR 63 - 125 %, DIP-4 400 mil (option 6)
SFH615A-2X007 CTR 63 - 125 %, SMD-4 (option 7)
SFH615A-2X009 CTR 63 - 125 %, SMD-4 (option 9)
SFH615A-3X006 CTR 100 - 200 %, DIP-4 400 mil (option 6)
SFH615A-3X007 CTR 100 - 200 %, SMD-4 (option 7)
SFH615A-3X008 CTR 100 - 200 %, SMD-4 (option 8)
SFH615A-3X009 CTR 100 - 200 %, SMD-4 (option 9)
SFH615A-4X006 CTR 160 - 320 %, DIP-4 400 mil (option 6)
SFH615A-4X007 CTR 160 - 320 %, SMD-4 (option 7)
SFH615A-4X008 CTR 160 - 320 %, SMD-4 (option 8)
SFH615A-4X009 CTR 160 - 320 %, SMD-4 (option 9)
For additional information on the available options refer to Option
Information.
See TAPE AND REEL Section for 4-pin optocouplers T0 with 90°
rotation.
Document Number 83671
Rev. 2.0, 06-Sep-06
www.vishay.com
1
Page 2
SFH615A/SFH6156
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage
DC Forward current
Surge forward current
t
≤ 10 µs I
p
V
I
F
FSM
R
Output
Parameter Test condition Symbol Val ue Unit
V
V
CEO
CE
I
C
C
Collector-emitter voltage
Emitter-collector voltage
Collector current
≤ 1.0 ms I
t
p
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage (between
emitter and detector, refered to
climate DIN 40046, part 2,
Nov. 74
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Insulation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance V
Storage temperature range
Ambient temperature range
Soldering temperature max. 10 s, Dip soldering
t = 1.0 s V
= 500 V, T
IO
V
= 500 V, T
IO
= 25 °C R
amb
= 100 °C R
amb
distance to seating plane
≥ 1.5 mm
ISO
IO
IO
T
stg
T
amb
T
sld
6.0 V
60 mA
2.5 A
70 V
7.0 V
50 mA
100 mA
5300 V
RMS
≥ 0.4 mm
≥ 175
12
≥ 10
11
≥ 10
- 55 to + 150 °C
- 55 to + 100 °C
260 °C
Ω
Ω
200
150
100
50
Diode
tot
P - Power Dissipation (mW)
0
0 25 50 75 100 125 150
18483
T
amb
Phototransistor
- Ambient Temperature (°C)
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
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2
Document Number 83671
Rev. 2.0, 06-Sep-06
Page 3
SFH615A/SFH6156
T
A
θ
CA
T
C
T
JD
T
JE
T
B
θ
EC
θ
EB
θ
DC
θ
DB
θ
BA
θ
DE
T
A
Vishay Semiconductors
Thermal Characteristics
The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB,
layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics
of Optocouplers Application note.
Parameter Test condition Symbol Val ue Unit
LED Power dissipation at 25 °C P
Output Power dissipation at 25 °C P
Maximum LED junction temperature T
Maximum output die junction temperature T
Thermal resistance, Junction Emitter to Board
Thermal resistance, Junction Emitter to Case
Thermal resistance, Junction Detector to Board
Thermal resistance, Junction Detector to Case
Thermal resistance, Junction Emitter to Junction Detector
Thermal resistance, Board to Ambient*
Thermal resistance, Case to Ambient*
* For 2 layer FR4 board (4" x 3" x 0.062)
jmax
jmax
θ
θ
θ
θ
θ
θ
θ
diss
diss
EB
EC
DB
DC
ED
BA
CA
100 mW
150 mW
125 °C
125 °C
173 °C/W
149 °C/W
111 °C/W
127 °C/W
95 °C/W
195 °C/W
3573 °C/W
Package
19996
Document Number 83671
Rev. 2.0, 06-Sep-06
www.vishay.com
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Page 4
SFH615A/SFH6156
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
= 60 mA V
Forward voltage
Reverse current
Capacitance
Output
Parameter Test condition Par t Symbol Min Ty p. Max Unit
Collector-emitter capacitance
Collector-emitter leakage
current
I
F
= 6.0 V I
V
R
= 0 V, f = 1.0 MHz C
V
R
= 5.0 V, f = 1.0 MHz C
V
CE
= 10 V SFH615A-1
V
CE
F
R
O
SFH6156-1
SFH615A-2
SFH6156-2
SFH615A-3
SFH6156-3
SFH615A-4
SFH6156-4
I
CEO
I
CEO
I
CEO
I
CEO
CE
1.25 1.65 V
0.01 10 µA
13 pF
5.2 pF
2.0 50 nA
2.0 50 nA
5.0 100 nA
5.0 100 nA
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter saturation
voltage
Coupling capacitance
= 10 mA, IC = 2.5 mA V
I
F
CEsat
C
C
0.25 0.4 V
0.4 pF
Current Transfer Ratio
Parameter Te s t co n di t i on Part Symbol Min Ty p. Max Unit
I
C/IF
IF = 10 mA, VCE = 5.0 V
I
= 1.0 mA, VCE = 5.0 V
F
SFH615A-1
SFH6156-1
SFH615A-2
SFH6156-2
SFH615A-3
SFH6156-3
SFH615A-4
SFH6156-4
SFH615A-1
SFH6156-1
SFH615A-2
SFH6156-2
SFH615A-3
SFH6156-3
SFH615A-4
SFH6156-4
CTR 40 80 %
CTR 63 125 %
CTR 100 200 %
CTR 160 320 %
CTR 13 30 %
CTR 22 45 %
CTR 34 70 %
CTR 56 90 %
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4
Document Number 83671
Rev. 2.0, 06-Sep-06
Page 5
SFH615A/SFH6156
Vishay Semiconductors
Switching Characteristics
Switching Non-saturated
Parameter Test condition Symbol Min Ty p. Max Unit
= 10 mA, VCC = 5.0 V, TA = 25 °C, RL = 75 Ω t
Rise Time
Fall Time
Turn-on time
Turn-off time
Cut-off
frequency
I
F
= 10 mA, VCC = 5.0 V, TA = 25 °C, RL = 75 Ω t
I
F
= 10 mA, VCC = 5.0 V, TA = 25 °C, RL = 75 Ω t
I
F
= 10 mA, VCC = 5.0 V, TA = 25 °C, RL = 75 Ω t
I
F
= 10 mA, VCC = 5.0 V, TA = 25 °C, RL = 75 Ω f
I
F
r
f
on
off
ctr
Switching Saturated
Parameter Test condition Part Symbol Min Ty p. Max Unit
Rise time V
= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 20 mA SFH615A-1
CC
t
r
SFH6156-1
= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 10 mA SFH615A-2
V
CC
SFH6156-2
SFH615A-3
SFH6156-3
= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 5.0 mA SFH615A-4
V
CC
t
r
t
r
t
r
SFH6156-4
Fall time V
= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 20 mA SFH615A-1
CC
= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 10 mA SFH615A-2
V
CC
SFH6156-1
SFH6156-2
SFH615A-3
t
f
t
f
t
f
SFH6156-3
Turn-on time V
= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 5.0 mA SFH615A-4
V
CC
= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 20 mA SFH615A-1
CC
= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 10 mA SFH615A-2
V
CC
SFH6156-4
SFH6156-1
t
f
t
on
t
on
SFH6156-2
Turn-off time V
SFH615A-3
SFH6156-3
= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 5.0 mA SFH615A-4
V
CC
= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 20 mA SFH615A-1
CC
SFH6156-4
t
on
t
on
t
off
SFH6156-1
= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 10 mA SFH615A-2
V
CC
SFH6156-2
SFH615A-3
SFH6156-3
= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 5.0 mA SFH615A-4
V
CC
t
off
t
off
t
off
SFH6156-4
2.0 µs
2.0
3.0
2.3
250 kHz
2.0 µs
3.0 µs
3.0 µs
4.6 µs
11 µs
14 µs
14 µs
15 µs
3.0 µs
4.2 µs
4.2 µs
6.0 µs
18 µs
23 µs
23 µs
25 µs
µs
µs
µs
Document Number 83671
Rev. 2.0, 06-Sep-06
www.vishay.com
5
Page 6
SFH615A/SFH6156
Vishay Semiconductors
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
I
F
47 Ω
isfh615a_01
Figure 2. Linear Operation (without Saturation)
RL=75Ω
I
C
30
=14 mA
I
1.0 mA
F
12 mA
10 mA
8.0 mA
6.0 mA
4.0 mA
2.0 mA
mA
V
=5V
CC
I
C
isfh615a_04
20
10
0
0510V 15
V
CE
Figure 5. Output Characteristics (typ.) Collector Current vs.
Collector-Emitter Voltage
I
F
47 Ω
isfh615a_02
Figure 3. Switching Operation (with Saturation)
3
10
%
IF=10mA,VCE= 5.0 V
5
I
C
I
F
2
10
5
4
3
2
1
1 Ω
1.2
V
1.1
V
=5V
V
CC
F
isfh615a_05
1.0
0.9
-1
10
0
10
I
F
25°
50°
75°
101mA 10
2
Figure 6. Diode Forward Voltage (typ.) vs. Forward Current
20
pF
15
C
10
5
f = 1.0 MHz
C
CE
1
10
- 25 0 25 50 °C 75
isfh615a_01
T
A
Figure 4. Current Transfer Ratio (typical) vs. Temperature
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6
isfh615a_06
0
-2
10
-1
10
-0
10
V
e
101V 10
Figure 7. Transistor Capacitance (typ.) vs.
Collector-Emitter Voltage
Document Number 83671
Rev. 2.0, 06-Sep-06
2
Page 7
4
I
F
10
mA
10
10
10
isfh615a_07
5
3
5
2
5
1
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
DC
- 5
- 410- 3
10
Pulse cycle D = parameter
10
t
p
t
p
D=
T
- 2
10
t
p
T
- 1
I
F
100s10
1
Figure 8. Permissible Pulse Handling Capability Forward Current
vs. Pulse Width
Package Dimensions in Inches (mm)
SFH615A/SFH6156
Vishay Semiconductors
i178027
0.255 (6.48)
0.268 (6.81)
0.030 (0.76)
0.045 (1.14)
typ.
0.018 (0.46)
0.022 (0.56)
4°
2
1
3
4
0.179 (4.55)
0.190 (4.83)
pin one ID
0.031 (0.79) typ.
0.050 (1.27) typ.
0.130 (3.30)
0.150 (3.81)
0.020 (0.508)
0.035 (0.89)
0.050 (1.27)
0.100 (2.54)
ISO Method A
0.300 (7.62) typ.
10°
3° - 9°
0.008 (0.20)
0.012 (0.30)
0.110 (2.79)
0.130 (3.30)
0.230 (5.84)
0.250 (6.35)
Document Number 83671
Rev. 2.0, 06-Sep-06
www.vishay.com
7
Page 8
SFH615A/SFH6156
Vishay Semiconductors
Package Dimensions in Inches (mm)
ISO Method A
i178029_1
SMD
0.255 (6.48)
0.268 (6.81)
0.030 (0.76)
0.045 (1.14)
4° typ.
1.00 (2.54) typ.
0.050 (1.27)
typ.
34
0.179 (4.55)
0.190 (4.83)
0.098 (0.249)
0.035 (0.102)
pin one ID
0.031 (0.79)
typ.
0.130 (3.30)
0.150 (3.81)
coplanarity
0.004 max.
0.100 (2.54)
Lead
R 0.010 (0.25)
0.315 (8.00) min
0.435 (11.05)
0.375 (9.52)
0.395 (10.03)
0.296 (7.52)
0.312 (7.90)
10°
0.315 (8.00)
min.
0.020 (0.508)
0.040 (1.02)
0.030 (0.76)
0.070 (1.78)
0.060 (1.52)
0.010 (0.25)
typ.
3° - 7°
0.0040 (0.102)
0.0098 (0.249)
18486
Option 9
0.375 (9.53)
0.395 (10.03)
0.300 (7.62) ref.
0.020 (0.51)
0.040 (1.02)
0.315 (8.00)
min.
0.012 (0.30) typ.
15° max.
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8
Document Number 83671
Rev. 2.0, 06-Sep-06
Page 9
SFH615A/SFH6156
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 83671
Rev. 2.0, 06-Sep-06
www.vishay.com
9
Page 10
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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