SFH615A/SFH6156
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Reliability,
5300 V
RMS
Features
• Excellent CTR Linearity Depending on
Forward Current
• Isolation Test Voltage, 5300 V
RMS
e3
• Fast Switching Times
• Low CTR Degradation
• Low Coupling Capacitance
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
• Switchmode power supply
• Telecom
• Battery powered equipment
Description
The SFH615A (DIP) and SFH6156 (SMD) feature a
variety of transfer ratios, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and
is incorporated in a plastic DIP-4 or SMD package.
The coupling devices are designed for signal transmission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of > 8.0 mm are
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
up to an operation voltage of 400 V
Specifications subject to change.
RMS
or DC.
1
C
4
3
E
1
17448
A
1
C
2
Order Information
Part Remarks
SFH615A-1 CTR 40 - 80 %, DIP-4
SFH615A-2 CTR 63 - 125 %, DIP-4
SFH615A-3 CTR 100 - 200 %, DIP-4
SFH615A-4 CTR 160 - 320 %, DIP-4
SFH6156-1 CTR 40 - 80 %, SMD-4
SFH6156-2 CTR 63 - 125 %, SMD-4
SFH6156-3 CTR 100 - 200 %, SMD-4
SFH6156-4 CTR 160 - 320 %, SMD-4
SFH615A-1X006 CTR 40 - 80 %, DIP-4 400 mil (option 6)
SFH615A-1X007 CTR 40 - 80 %, SMD-4 (option 7)
SFH615A-2X006 CTR 63 - 125 %, DIP-4 400 mil (option 6)
SFH615A-2X007 CTR 63 - 125 %, SMD-4 (option 7)
SFH615A-2X009 CTR 63 - 125 %, SMD-4 (option 9)
SFH615A-3X006 CTR 100 - 200 %, DIP-4 400 mil (option 6)
SFH615A-3X007 CTR 100 - 200 %, SMD-4 (option 7)
SFH615A-3X008 CTR 100 - 200 %, SMD-4 (option 8)
SFH615A-3X009 CTR 100 - 200 %, SMD-4 (option 9)
SFH615A-4X006 CTR 160 - 320 %, DIP-4 400 mil (option 6)
SFH615A-4X007 CTR 160 - 320 %, SMD-4 (option 7)
SFH615A-4X008 CTR 160 - 320 %, SMD-4 (option 8)
SFH615A-4X009 CTR 160 - 320 %, SMD-4 (option 9)
For additional information on the available options refer to Option
Information.
See TAPE AND REEL Section for 4-pin optocouplers T0 with 90°
rotation.
Document Number 83671
Rev. 2.0, 06-Sep-06
www.vishay.com
1
SFH615A/SFH6156
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage
DC Forward current
Surge forward current
t
≤ 10 µs I
p
V
I
F
FSM
R
Output
Parameter Test condition Symbol Val ue Unit
V
V
CEO
CE
I
C
C
Collector-emitter voltage
Emitter-collector voltage
Collector current
≤ 1.0 ms I
t
p
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage (between
emitter and detector, refered to
climate DIN 40046, part 2,
Nov. 74
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Insulation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance V
Storage temperature range
Ambient temperature range
Soldering temperature max. 10 s, Dip soldering
t = 1.0 s V
= 500 V, T
IO
V
= 500 V, T
IO
= 25 °C R
amb
= 100 °C R
amb
distance to seating plane
≥ 1.5 mm
ISO
IO
IO
T
stg
T
amb
T
sld
6.0 V
60 mA
2.5 A
70 V
7.0 V
50 mA
100 mA
5300 V
RMS
≥ 0.4 mm
≥ 175
12
≥ 10
11
≥ 10
- 55 to + 150 °C
- 55 to + 100 °C
260 °C
Ω
Ω
200
150
100
50
Diode
tot
P - Power Dissipation (mW)
0
0 25 50 75 100 125 150
18483
T
amb
Phototransistor
- Ambient Temperature (°C)
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
www.vishay.com
2
Document Number 83671
Rev. 2.0, 06-Sep-06
SFH615A/SFH6156
T
A
θ
CA
T
C
T
JD
T
JE
T
B
θ
EC
θ
EB
θ
DC
θ
DB
θ
BA
θ
DE
T
A
Vishay Semiconductors
Thermal Characteristics
The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB,
layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics
of Optocouplers Application note.
Parameter Test condition Symbol Val ue Unit
LED Power dissipation at 25 °C P
Output Power dissipation at 25 °C P
Maximum LED junction temperature T
Maximum output die junction temperature T
Thermal resistance, Junction Emitter to Board
Thermal resistance, Junction Emitter to Case
Thermal resistance, Junction Detector to Board
Thermal resistance, Junction Detector to Case
Thermal resistance, Junction Emitter to Junction Detector
Thermal resistance, Board to Ambient*
Thermal resistance, Case to Ambient*
* For 2 layer FR4 board (4" x 3" x 0.062)
jmax
jmax
θ
θ
θ
θ
θ
θ
θ
diss
diss
EB
EC
DB
DC
ED
BA
CA
100 mW
150 mW
125 °C
125 °C
173 °C/W
149 °C/W
111 °C/W
127 °C/W
95 °C/W
195 °C/W
3573 °C/W
Package
19996
Document Number 83671
Rev. 2.0, 06-Sep-06
www.vishay.com
3
Loading...