VISHAY SFH615A, SFH6156 User Manual

SFH615A / SFH6156

Vishay Semiconductors

Optocoupler, High Reliability, 5300 V

Features

• Excellent CTR Linearity Depending on
Forward Current

• Isolation Test Voltage, 5300 V

• Fast Switching Times

• Low CTR Degradation

• Low Coupling Capacitance

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E52744 System Code H or J,
Double Protection

• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1

Applications

Switchmode power supply
Telecom
Battery powered equipment

Description

The SFH615A (DIP) and SFH6156 (SMD) feature a
variety of transfer ratios, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared diode emitter, which is optically cou­pled to a silicon planar phototransistor detector, and
is incorporated in a plastic DIP-4 or SMD package.

The coupling devices are designed for signal trans­mission between two electrically separated circuits.

The couplers are end-stackable with 2.54 mm lead
spacing.

Creepage and clearance distances of > 8.0 mm are
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
up to an operation voltage of 400 V

Specifications subject to change.

RMS

RMS

or DC.

e3

Order Information

SFH615A-1 CTR 40 - 80 %, DIP-4

SFH615A-2 CTR 63 - 125 %, DIP-4

SFH615A-3 CTR 100 - 200 %, DIP-4

SFH615A-4 CTR 160 - 320 %, DIP-4

SFH6156-1 CTR 40 - 80 %, SMD-4

SFH6156-2 CTR 63 - 125 %, SMD-4

SFH6156-3 CTR 100 - 200 %, SMD-4

SFH6156-4 CTR 160 - 320 %, SMD-4

SFH615A-1X006 CTR 40 - 80 %, DIP-4 400 mil (option 6)

SFH615A-1X007 CTR 40 - 80 %, SMD-4 (option 7)

SFH615A-2X006 CTR 63 - 125 %, DIP-4 400 mil (option 6)

SFH615A-2X007 CTR 63 - 125 %, SMD-4 (option 7)

SFH615A-2X009 CTR 63 - 125 %, SMD-4 (option 9)

SFH615A-3X006 CTR 100 - 200 %, DIP-4 400 mil (option 6)

SFH615A-3X007 CTR 100 - 200 %, SMD-4 (option 7)

SFH615A-3X008 CTR 100 - 200 %, SMD-4 (option 8)

SFH615A-3X009 CTR 100 - 200 %, SMD-4 (option 9)

SFH615A-4X006 CTR 160 - 320 %, DIP-4 400 mil (option 6)

SFH615A-4X007 CTR 160 - 320 %, SMD-4 (option 7)

SFH615A-4X008 CTR 160 - 320 %, SMD-4 (option 8)

SFH615A-4X009 CTR 160 - 320 %, SMD-4 (option 9)

For additional information on the available options refer to
Option Information.

See TAPE AND REEL Section for 4-pin optocouplers T0 with 90 °
rotation.

RMS

1

A

1

C

2

17448

Part Remarks

C

4

3

E

1

Document Number 83671

Rev. 1.9, 11-May-05

www.vishay.com

1

SFH615A / SFH6156

Vishay Semiconductors

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage V

DC Forward current I

Surge forward current t

≤ 10 µsI

p

Power dissipation P

Output

Parameter Test condition Symbol Val ue Unit

Collector-emitter voltage V

Emitter-collector voltage V

Collector current I

t

≤ 1.0 ms I

p

Power dissipation P

R

F

FSM

diss

CE

CEO

C

C

diss

6.0 V

60 mA

2.5 A

100 mW

70 V

7.0 V

50 mA

100 mA

150 mW

Coupler

Parameter Test condition Symbol Val ue Unit

Isolation test voltage (between
emitter and detector, refered to

t = 1.0 s V

ISO

climate DIN 40046, part 2,
Nov. 74

Creepage ≥ 7.0 mm

Clearance ≥ 7.0 mm

Insulation thickness between
emitter and detector

Comparative tracking index per
DIN IEC 112/VDE 0303, part 1

Isolation resistance V

= 500 V, T

IO

V

= 500 V, T

IO

Storage temperature range T

Ambient temperature range T

Soldering temperature max. 10 s, Dip soldering

distance to seating plane

= 25 °C R

amb

= 100 °C R

amb

T

IO

IO

stg

amb

sld

≥ 1.5 mm

5300 V

≥ 0.4 mm

≥ 175

12

≥ 10

11

≥ 10

- 55 to + 150 °C

- 55 to + 100 °C

260 °C

RMS

Ω

Ω

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2

Document Number 83671

Rev. 1.9, 11-May-05

200

150

SFH615A / SFH6156

Vishay Semiconductors

100

50

tot

P –Power Dissipation (mW)

18483

Diode

0

0 25 50 75 100 125 150

T

– Ambient Temperature ( qC )

amb

Phototransistor

Figure 1. Permissible Power Dissipation vs. Ambient Temperature

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

Capacitance V

= 60mA V

F

= 6.0 V I

R

= 0 V, f = 1.0 MHz C

R

Thermal resistance R

F

R

O

thja

1.25 1.65 V

0.01 10 µA

13 pF

750 K/W

Output

Parameter Test condition Part Symbol Min Ty p. Max Unit

Collector-emitter capacitance V

= 5.0 V, f = 1.0 MHz C

CE

Thermal resistance R

Collector-emitter leakage
current

V

= 10 V SFH615A-1

CE

SFH6156-1

SFH615A-2

SFH6156-2

SFH615A-3

SFH6156-3

SFH615A-4

SFH6156-4

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Collector-emitter saturation
voltage

Coupling capacitance C

Document Number 83671

Rev. 1.9, 11-May-05

= 10 mA, IC = 2.5 mA V

I

F

CEsat

C

I

CEO

I

CEO

I

CEO

I

CEO

CE

thja

5.2 pF

500 K/W

2.0 50 nA

2.0 50 nA

5.0 100 nA

5.0 100 nA

0.25 0.4 V

0.4 pF

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3

SFH615A / SFH6156

Vishay Semiconductors

Current Transfer Ratio

Parameter Te s t co n di t i on Par t Symbol Min Ty p. Max Unit

I

C/IF

IF = 10 mA, VCE = 5.0 V SFH615A-1

SFH6156-1

SFH615A-2
SFH6156-2

SFH615A-3
SFH6156-3

SFH615A-4
SFH6156-4

= 1.0 mA, VCE = 5.0 V SFH615A-1

I

F

SFH6156-1

SFH615A-2
SFH6156-2

SFH615A-3
SFH6156-3

SFH615A-4
SFH6156-4

Switching Characteristics

Switching Non-saturated

Parameter Test condition Symbol Min Ty p . Max Unit

Rise Time I

Fall Time I

Turn-on time I

Turn-off time I

Cut-off
frequency

Switching Saturated

Parameter Test condition Par t Symbol Min Ty p. Max Unit

Rise time V

Fall time V

Turn-on time V

= 10 mA, VCC = 5.0 V, TA = 25 °C, RL = 75 Ω t

F

= 10 mA, VCC = 5.0 V, TA = 25 °C, RL = 75 Ω t

F

= 10 mA, VCC = 5.0 V, TA = 25 °C, RL = 75 Ω t

F

= 10 mA, VCC = 5.0 V, TA = 25 °C, RL = 75 Ω t

F

I

= 10 mA, VCC = 5.0 V, TA = 25 °C, RL = 75 Ω f

F

= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 20 mA SFH615A-1

CC

SFH6156-1

= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 10 mA SFH615A-2

V

CC

SFH6156-2

SFH615A-3
SFH6156-3

= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 5.0 mA SFH615A-4

V

CC

SFH6156-4

= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 20 mA SFH615A-1

CC

= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 10 mA SFH615A-2

V

CC

SFH6156-1

SFH6156-2

SFH615A-3
SFH6156-3

= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 5.0 mA SFH615A-4

V

CC

= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 20 mA SFH615A-1

CC

= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 10 mA SFH615A-2

V

CC

SFH6156-4

SFH6156-1

SFH6156-2

SFH615A-3
SFH6156-3

= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 5.0 mA SFH615A-4

V

CC

SFH6156-4

r

f

on

off

ctr

CTR 40 80 %

CTR 63 125 %

CTR 100 200 %

CTR 160 320 %

CTR 13 30 %

CTR 22 45 %

CTR 34 70 %

CTR 56 90 %

2.0 µs

2.0 µs

3.0 µs

2.3 µs

250 kHz

t

r

t

r

t

r

t

r

t

f

t

f

t

f

t

f

t

on

t

on

t

on

t

on

2.0 µs

3.0 µs

3.0 µs

4.6 µs

11 µs

14 µs

14 µs

15 µs

3.0 µs

4.2 µs

4.2 µs

6.0 µs

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4

Document Number 83671

Rev. 1.9, 11-May-05

SFH615A / SFH6156

isfh615a_01

–25 0 25 50 °C 75

10

3

10

2

10

1

5

5

%

I

C

I

F

T

A

4

3

2

1

IF=10mA,VCE= 5.0 V

isfh615a_04

30

20

10

0

0 5 10 V 15

IF=14 mA

2.0 mA

4.0 mA

6.0 mA

8.0 mA

10 mA

12 mA

1.0 mA

mA

I

C

V

CE

Vishay Semiconductors

Parameter Test condition Par t Symbol Min Ty p. Max Unit

Turn-off time VCC = 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 20 mA SFH615A-1

SFH6156-1

= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 10 mA SFH615A-2

V

CC

SFH6156-2

SFH615A-3

SFH6156-3

= 5.0 V, TA = 25 °C, RL = 1 kΩ, IF = 5.0 mA SFH615A-4

V

CC

SFH6156-4

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

t

off

t

off

t

off

t

off

18 µs

23 µs

23 µs

25 µs

I

F

RL=75Ω

I

C

47 Ω

isfh615a_01

Figure 2. Linear Operation (without Saturation)

I

F

1 Ω

47 Ω

V

=5V

CC

Figure 4. Current Transfer Ratio (typical) vs. Temperature

V

=5V

CC

isfh615a_02

Figure 3. Switching Operation (with Saturation)

Document Number 83671

Rev. 1.9, 11-May-05

Figure 5. Output Characteristics (typ.) Collector Current vs.

Collector-Emitter Voltage

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5

SFH615A / SFH6156

Vishay Semiconductors

1.2

V

1.1

V

F

1.0

0.9

isfh615a_05

10

–1

10

0

I

F

Figure 6. Diode Forward Voltage (typ.) vs. Forward Current

20

pF

15

C

10

f = 1.0 MHz

C

CE

10

1

25°
50°
75°

mA 10

2

5

0

isfh615a_06

10

–2

10

–1

10

–0

V

e

101V10

2

Figure 7. Transistor Capacitance (typ.) vs. Collector-Emitter

Voltage

4

I

F

isfh615a_07

10

10

10

10

mA

5

5

5

3

2

1

10

D=

0

0.005

0.01

0.02

0.05

0.1

0.2

0.5
DC

–5

10–410–310

t

p

t

D=

p

T

I

F

T

Pulse cycle D = parameter

–2

10–1100s10

t

p

1

Figure 8. Permissible Pulse Handling Capability Forward Current

vs. Pulse Width

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6

Document Number 83671

Rev. 1.9, 11-May-05

Package Dimensions in Inches (mm)

2

1

pin one ID

.255 (6.48)
.268 (6.81)

3

4

.179 (4.55)
.190 (4.83)

.031 (.79) typ.
.050 (1.27) typ.

.130 (3.30)
.150 (3.81)

.020 (.508 )
.035 (.89)

.050 (1.27)

.100 (2.54)

i178027

.030 (.76)
.045 (1.14)

4°

typ.

.018 (.46)
.022 (.56)

ISO Method A

.300 (7.62) typ.

10°

3°–9°

.008 (.20)
.012 (.30)

SFH615A / SFH6156

Vishay Semiconductors

.230 (5.84)
.250 (6.35)

.110 (2.79)
.130 (3.30)

Package Dimensions in Inches (mm)

SMD

pin one ID

.255 (6.48)
.268 (6.81)

34

.179 (4.55)
.190 (4.83)

ISO Method A

i178029

.030 (.76)
.045 (1.14)

4° typ.

1.00 (2.54)typ.

.050 (1.27)

typ.

.031 (.79)
typ.

.130 (3.30)
.150 (3.81)

.0098 (.249)
.035 (.102)

Lead

coplanarity

.004 max.

.100 (2.54)

R .010 (.25)

.315 (8.00) mi

.435 (11.05)

.375 (9.52)

.395 (10.03)

.296 (7.52)
.312 (7.90)

°

10

.315 (8.00)

min.

.020 (.508)
.040 (1.02)

.030 (.76)

.070 (1.78)

n

.060 (1.52)

.010 (.25)

typ.

3°–7°

Document Number 83671

Rev. 1.9, 11-May-05

www.vishay.com

7

SFH615A / SFH6156

Vishay Semiconductors

Option 9

.375 (9.53)

.395 (10.03)

0040 (.102)
0098 (.249)

18486

.300 (7.62)

.020 (.51)

.040 (1.02)

.315 (8.00)

ref.

.012 (.30) typ.

15° max.

min.

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8

Document Number 83671

Rev. 1.9, 11-May-05

SFH615A / SFH6156

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number 83671

Rev. 1.9, 11-May-05

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9

Legal Disclaimer Notice

Vishay

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.