VISHAY SFH615A, SFH6156 User Manual

SFH615A / SFH6156

Vishay Semiconductors

Optocoupler, High Reliability, 5300 V

Features

• Excellent CTR Linearity Depending on Forward Current

• Isolation Test Voltage, 5300 V

• Fast Switching Times

• Low CTR Degradation

• Low Coupling Capacitance

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E52744 System Code H or J, Double Protection

• DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1

Applications

Switchmode power supply Telecom Battery powered equipment

Description

The SFH615A (DIP) and SFH6156 (SMD) feature a variety of transfer ratios, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package.

The coupling devices are designed for signal transmission between two electrically separated circuits.

The couplers are end-stackable with 2.54 mm lead spacing.

Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 V

Specifications subject to change.

RMS

or DC.

Order Information

SFH615A-1 CTR 40 - 80 %, DIP-4

SFH615A-2 CTR 63 - 125 %, DIP-4

SFH615A-3 CTR 100 - 200 %, DIP-4

SFH615A-4 CTR 160 - 320 %, DIP-4

SFH6156-1 CTR 40 - 80 %, SMD-4

SFH6156-2 CTR 63 - 125 %, SMD-4

SFH6156-3 CTR 100 - 200 %, SMD-4

SFH6156-4 CTR 160 - 320 %, SMD-4

SFH615A-1X006 CTR 40 - 80 %, DIP-4 400 mil (option 6)

SFH615A-1X007 CTR 40 - 80 %, SMD-4 (option 7)

SFH615A-2X006 CTR 63 - 125 %, DIP-4 400 mil (option 6)

SFH615A-2X007 CTR 63 - 125 %, SMD-4 (option 7)

SFH615A-2X009 CTR 63 - 125 %, SMD-4 (option 9)

SFH615A-3X006 CTR 100 - 200 %, DIP-4 400 mil (option 6)

SFH615A-3X007 CTR 100 - 200 %, SMD-4 (option 7)

SFH615A-3X008 CTR 100 - 200 %, SMD-4 (option 8)

SFH615A-3X009 CTR 100 - 200 %, SMD-4 (option 9)

SFH615A-4X006 CTR 160 - 320 %, DIP-4 400 mil (option 6)

SFH615A-4X007 CTR 160 - 320 %, SMD-4 (option 7)

SFH615A-4X008 CTR 160 - 320 %, SMD-4 (option 8)

SFH615A-4X009 CTR 160 - 320 %, SMD-4 (option 9)

For additional information on the available options refer to Option Information.

See TAPE AND REEL Section for 4-pin optocouplers T0 with 90 ° rotation.

RMS

17448

Part Remarks

Document Number 83671

Rev. 1.9, 11-May-05

www.vishay.com

SFH615A / SFH6156

Vishay Semiconductors

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage V

DC Forward current I

Surge forward current t

≤ 10 µsI

Power dissipation P

Output

Parameter Test condition Symbol Val ue Unit

Collector-emitter voltage V

Emitter-collector voltage V

Collector current I

≤ 1.0 ms I

Power dissipation P

FSM

diss

CEO

diss

6.0 V

60 mA

2.5 A

100 mW

70 V

7.0 V

50 mA

100 mA

150 mW

Coupler

Parameter Test condition Symbol Val ue Unit

Isolation test voltage (between emitter and detector, refered to

t = 1.0 s V

ISO

climate DIN 40046, part 2, Nov. 74

Creepage ≥ 7.0 mm

Clearance ≥ 7.0 mm

Insulation thickness between emitter and detector

Comparative tracking index per DIN IEC 112/VDE 0303, part 1

Isolation resistance V

= 500 V, T

Storage temperature range T

Ambient temperature range T

Soldering temperature max. 10 s, Dip soldering

distance to seating plane

= 25 °C R

amb

= 100 °C R

amb

stg

amb

sld

≥ 1.5 mm

5300 V

≥ 0.4 mm

≥ 175

≥ 10

- 55 to + 150 °C

- 55 to + 100 °C

260 °C

RMS

Ω

www.vishay.com

Document Number 83671

Rev. 1.9, 11-May-05

200

150

SFH615A / SFH6156

Vishay Semiconductors

100

tot

P –Power Dissipation (mW)

18483

Diode

0 25 50 75 100 125 150

– Ambient Temperature ( qC )

amb

Phototransistor

Figure 1. Permissible Power Dissipation vs. Ambient Temperature

Electrical Characteristics

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

Capacitance V

= 60mA V

= 6.0 V I

= 0 V, f = 1.0 MHz C

Thermal resistance R

thja

1.25 1.65 V

0.01 10 µA

13 pF

750 K/W

Output

Parameter Test condition Part Symbol Min Ty p. Max Unit

Collector-emitter capacitance V

= 5.0 V, f = 1.0 MHz C

Thermal resistance R

Collector-emitter leakage current

= 10 V SFH615A-1

SFH6156-1

SFH615A-2

SFH6156-2

SFH615A-3

SFH6156-3

SFH615A-4

SFH6156-4

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Collector-emitter saturation voltage

Coupling capacitance C

Document Number 83671

Rev. 1.9, 11-May-05

= 10 mA, IC = 2.5 mA V

CEsat

CEO

thja

5.2 pF

500 K/W

2.0 50 nA

5.0 100 nA

0.25 0.4 V

0.4 pF

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