VISHAY SFH 6136 VIS Datasheet

VISHAY

i179081

1

2

3

4

8

7

6

5

C(VCC)

NC

A

C

NC

B(V

B

)

C(V

O

)

E (GND)

SFH6135/ SFH6136

Vishay Semiconductors

High Speed Optocoupler, 1 MBd, Transistor Output

Features

• Isolation Test Voltage: 5300 V

• TTL Compatible

• High Bit Rates: 1.0 Mbit/s

• High Common-mode Interference Immunity

• Bandwidth 2.0 MHz

• Open-collector Output

• External Base Wiring Possible

Agency Approvals

• UL - File No. E52744 System Code H or J

RMS

• CSA 93751

• DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1

Signals can be transmitted between two electrically separated circuits up to frequencies of 2.0 MHz. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages.

Description

The SFH6135 and SFH6136 optocouplers feature a high signal transmission rate and a high isolation resistance. They have a GaAIAs infrared emitting diode, optically coupled with an integrated photo detector which consists of a photo diode and a highspeed transistor in a DIP-8 plastic package.

Order Information

Part Remarks

SFH6135 CTR ≥ 7.0 %, DIP-8

SFH6136 CTR ≥ 19 %, DIP-8

For additional information on the available options refer to Option Information.

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Value Unit

Reverse voltage V

Forward current I

Peak forward current t = 1.0 ms, duty cycle 50 % I

Maximum surge forward current t ≤ 1.0 µs, 300 pulses/s I

Thermal resistance R

Power dissipation P

R

F

FM

FSM

thja

diss

3.0 V

25 mA

50 mA

1.0 A

700 K/W

45 mW

Document Number 83668

Rev. 1.4, 27-Apr-04

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1

SFH6135/ SFH6136

VISHAY

Vishay Semiconductors

Output

Parameter Test condition Symbol Val ue Unit

Supply voltage V

Output voltage V

Emitter-base voltage V

Output current I

Maximum output current I

Base current I

Thermal resistance R

Power dissipation T

= 70 °C P

amb

S

O

EBO

O

B

thja

diss

- 0.5 to 30 V

- 0.5 to 25 V

5.0 V

8.0 mA

16 mA

5.0 mA

300 K/W

100 mW

Coupler

Parameter Test condition Symbol Val ue Unit

Isolation test voltage V

ISO

Pollution degree (DIN VDE

0110)

Creepage ≥ 7.0 mm

Clearance ≥ 7.0 mm

Comparative tracking index per DIN IEC 112/VDE 0303 part 1

Isolation resistance V

= 500 V, T

IO

V

= 500 V, T

IO

Storage temperature range T

Ambient temperature range T

Soldering temperature max. ≤10 s, dip soldering

= 25 °C R

amb

= 100 °C R

amb

T

IO

stg

amb

sld

≥ 0.5 mm distance from case bottom

5300 V

2

175

12

≥ 10

11

≥ 10

- 55 to + 125 °C

- 55 to + 100 °C

260 °C

RMS

Ω

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Breakdown voltage I

Reverse current V

Capacitance V

Temperature coefficient of forward voltage

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2

= 16 mA V

F

= 10 µAV

R

= 3.0 V I

R

= 0 V, f = 1.0 MHz C

R

I

= 16 mA ∆VF/∆T

F

BR

R

F

3.0 V

O

amb

1.6 1.9 V

0.5 10 µA

125 pF

1.7 mV/°C

Document Number 83668

Rev. 1.4, 27-Apr-04

VISHAY

Output

Parameter Test condition Part Symbol Min Ty p. Max Unit

Logic low supply current I

Logic high supply current I

Output voltage, output low I

Output current, output high I

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Capacitance (input-output) f = 1.0 MHz C

Current Transfer Ratio

Parameter Test condition Part Symbol Min Ty p. Max Unit

Current Transfer Ratio I

= 16 mA, VO open, VCC = 15 V I

F

= 0 mA, VO open, VCC = 15 V I

F

= 16 mA, VCC = 4.5 V,

F

I

= 1.1 mA

O

I

= 16 mA, VCC = 4.5 V,

F

I

= 2.4 mA

O

= 0 mA, VO = VCC = 5.5 V I

F

= 0 mA, VO = VCC = 15 V I

I

F

= 16 mA, VO = 0.4 V,

F

= 4.5 V

V

CC

SFH6135 V

SFH6136 V

SFH6135 CTR 7 16 %

SFH6136 CTR 19 35 %

= 16 mA, VO = 0.5 V,

I

F

V

= 4.5 V

CC

SFH6135 CTR 5 %

SFH6136 CTR 15 %

SFH6135/ SFH6136

Vishay Semiconductors

CCL

CCH

OL

OH

IO

150 µA

0.01 1.0 µA

0.1 0.4 V

3.0 500 nA

0.01 1.0 µA

0.6 pF

Pulse generator Z

=50Ω

O

t

tf=5ns

,

r

duty cycle 10% t≤100 µs

I

Monitor

F

isfh6135_01

Fig. 1 Schematics

I

F

100

I

F

t

R

L

C 15 pF

5V

V

L

V

O

V

OL

t

PHL

t

PLH

5V

1.5 V

t

1

2

3

4

Ω

ı

8

7

6

5

Document Number 83668

Rev. 1.4, 27-Apr-04

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3

SFH6135/ SFH6136

Vishay Semiconductors

Switching Characteristics

Delay Time

Parameter Test condition Part Symbol Min Ty p. Max Unit

High-low I

Low-high I

I

1

F

2

A

isfh6135_02

B

V

FF

3

4

Pulse generator

+V

CM

Z t

O

,

tf=8ns

r

= 16 mA, VCC = 5.0 V,

F

= 4.1 kΩ

R

L

I

= 16 mA, VCC = 5.0 V,

F

R

= 1.9 kΩ

L

= 16 mA, VCC = 5.0 V,

F

= 4.1 kΩ

R

L

I

= 16 mA, VCC = 5.0 V,

F

= 1.9 kΩ

R

L

8

7

6

5

=50Ω

VISHAY

SFH6135 t

SFH6136 t

SFH6135 t

SFH6136 t

V

CM

5V

R

L

V

O

V

PHL

PLH

10 V

90%

10% 90%

0V

t

O

5V

O

V

r

OL

t

f

10%

0.3 1.5 µs

0.2 0.8 µs

0.3 1.5 µs

0.2 0.8 µs

t

=0mA

A: I

F

t

=16mA

B: I

F

t

Fig. 2 Common-Mode Interference Immunity

Common Mode Transient Immunity

Parameter Test condition Part Symbol Min Ty p . Max Unit

High V

Low V

= 10 V

CM

I

= 0 mA, RL = 4.1 kΩ

F

V

= 10 V

CM

= 0 mA, RL = 1.9 kΩ

I

F

= 10 V

CM

= 0 mA, RL = 4.1 kΩ

I

F

= 10 V

V

CM

I

= 0 mA, RL = 1.9 kΩ

F

, VCC = 5.0 V,

P-P

, VCC = 5.0 V,

P-P

, VCC = 5.0 V,

P-P

, VCC = 5.0 V,

P-P

SFH6135 CM

SFH6136 CM

SFH6135 CM

SFH6136 CM

H

L

1000 V/µs

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Document Number 83668

Rev. 1.4, 27-Apr-04

VISHAY

isfh6135_06

25

20

15

10

5

0

0 5 10 15 20 25

Output Voltage, Vo (V)

Output Current, Io(mA)

IF=15mA

IF=10mA

IF=5mA

IF=40mA

IF=20mA

IF=35mA

IF=30mA

IF=25mA

(VCC= 5.0 V)

isfh6135_07

8

7

6

5

4

3

2

1

0

-60 -40 -20 0 20 40 60 80 100

Output Current, Io (mA)

Temperature, Ta (°C)

IF = 20mA

IF = 16mA

IF = 10mA

IF=2mA

IF=1mA

@VO= 0.4 V, VCC= 5.0

isfh6135_08

900

800

700

600

500

400

300

200

100

0

-60 -40 -20 0 20 40 60 80 100

tp - Propagation Delay Time - ns

Temperature, Ta (°C)

TpLH @ 3 V

TpHL@3V

TpHL @ 1.5 V

TpLH @ 1.5 V

SFH6136 @ VCC= 5.0 V IF= 16 mA, RL= 1.9 kΩ

SFH6135/ SFH6136

Vishay Semiconductors

Typical Characteristics (T

20

15

75 °C

- LED Current in mA F

I

isfh6135_03

10

5

0

VF- LED forward Voltage

25 °C

= 25 °C unless otherwise specified)

amb

Fig. 3 LED Forward Current vs.Forward Voltage

30

20

0°C

1.71.61.51.41.3

Fig. 6 Output Current vs. Output Voltage

LED Current in ma

F

10

I

0

isfh6135_04

Ambient Temperature in °C

Fig. 4 Permissible Forward LED Current vs. Temperature

120

100

80

60

40

Total Power in mW

20

0

isfh6135_05

Fig. 5 Permissible Power Dissipation vs. Temperature

Document Number 83668

Rev. 1.4, 27-Apr-04

Detector

Emitter

Ambient Temperature in °C

100806040200

Fig. 7 Output Current vs. Temperature

100806040200

Fig. 8 Propagation Delay vs. Temperature-SFH6136

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5

SFH6135/ SFH6136

Vishay Semiconductors

1400

SFH1635 @ VCC= 5.0 V,

1200

IF=16mA,RL= 4.1 kΩ

1000

800

600

400

200

tp - Propagation Delay Time - ns

0

-60 -40 -20 100

isfh6135_09

Fig. 9 Propagation Delay vs. Temperature-SFH6135

100

10

VCC=VO=15V

1

TpLH

TpHL

0

20 40

Temperature, Ta (°C)

60

80

VCC=VO=5V

VISHAY

0.1

0.01

- Collector Current, IC (nA)

OH

I

0.001

-60 -40 -20 100

isfh6135_10

0

20

Temperature, TA(°C)

40

60 80

Fig. 10 Logic High Output Current vs.Temperature

/ Small Signal Current

O

/∆i

F

ˇ

∆i

isfh6135_11

0.6

0.5

0.4

0.3

0.2

Transfer Ratio

0.1

0

5

(VCC= 5.0 V, RL= 100 Ω)

10 15 20 25

IF/mA

Fig. 11 Small Signal Current Transfer Ratio vs. Quiescent Input

Current

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Document Number 83668

Rev. 1.4, 27-Apr-04

VISHAY

Package Dimensions in Inches (mm)

pin one ID

SFH6135/ SFH6136

Vishay Semiconductors

i178006

.255 (6.48) .268 (6.81)

.030 (0.76) .045 (1.14)

4° typ.

.050 (1.27)

.018 (.46) .022 (.56)

4

3

5

6

.379 (9.63) .390 (9.91)

.100 (2.54) typ.

1

2

78

.031 (0.79)

.130 (3.30) .150 (3.81)

.020 (.51 ) .035 (.89 )

ISO Method A

.300 (7.62)

typ.

10°

3°–9° .008 (.20)

.012 (.30)

.110 (2.79) .130 (3.30)

.230(5.84) .250(6.35)

Document Number 83668

Rev. 1.4, 27-Apr-04

www.vishay.com

7

SFH6135/ SFH6136

VISHAY

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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Document Number 83668

Rev. 1.4, 27-Apr-04

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