VISHAY SFH 6136 VIS Datasheet

VISHAY
1
2
3
4
8
7
6
5
C(VCC)
NC
A
C
NC
B(V
B
)
C(V
O
)
E (GND)
SFH6135/ SFH6136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd, Transistor Output

Features

• Isolation Test Voltage: 5300 V
• TTL Compatible
• High Bit Rates: 1.0 Mbit/s
• High Common-mode Interference Immunity
• Bandwidth 2.0 MHz
• Open-collector Output
• External Base Wiring Possible

Agency Approvals

• UL - File No. E52744 System Code H or J
RMS
• CSA 93751
• DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1
Signals can be transmitted between two electrically separated circuits up to frequencies of 2.0 MHz. The potential difference between the circuits to be coupled should not exceed the maximum permissible refer­ence voltages.

Description

The SFH6135 and SFH6136 optocouplers feature a high signal transmission rate and a high isolation resistance. They have a GaAIAs infrared emitting diode, optically coupled with an integrated photo detector which consists of a photo diode and a high­speed transistor in a DIP-8 plastic package.
Order Information
Part Remarks
SFH6135 CTR 7.0 %, DIP-8
SFH6136 CTR 19 %, DIP-8
For additional information on the available options refer to Option Information.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Value Unit
Reverse voltage V
Forward current I
Peak forward current t = 1.0 ms, duty cycle 50 % I
Maximum surge forward current t 1.0 µs, 300 pulses/s I
Thermal resistance R
Power dissipation P
R
F
FM
FSM
thja
diss
3.0 V
25 mA
50 mA
1.0 A
700 K/W
45 mW
Document Number 83668
Rev. 1.4, 27-Apr-04
www.vishay.com
1
SFH6135/ SFH6136
VISHAY
Vishay Semiconductors
Output
Parameter Test condition Symbol Val ue Unit
Supply voltage V
Output voltage V
Emitter-base voltage V
Output current I
Maximum output current I
Base current I
Thermal resistance R
Power dissipation T
= 70 °C P
amb
S
O
EBO
O
O
B
thja
diss
- 0.5 to 30 V
- 0.5 to 25 V
5.0 V
8.0 mA
16 mA
5.0 mA
300 K/W
100 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage V
ISO
Pollution degree (DIN VDE
0110)
Creepage 7.0 mm
Clearance 7.0 mm
Comparative tracking index per DIN IEC 112/VDE 0303 part 1
Isolation resistance V
= 500 V, T
IO
V
= 500 V, T
IO
Storage temperature range T
Ambient temperature range T
Soldering temperature max. 10 s, dip soldering
= 25 °C R
amb
= 100 °C R
amb
T
IO
IO
stg
amb
sld
0.5 mm distance from case bottom
5300 V
2
175
12
10
11
10
- 55 to + 125 °C
- 55 to + 100 °C
260 °C
RMS
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Breakdown voltage I
Reverse current V
Capacitance V
Temperature coefficient of forward voltage
www.vishay.com
2
= 16 mA V
F
= 10 µAV
R
= 3.0 V I
R
= 0 V, f = 1.0 MHz C
R
I
= 16 mA ∆VF/T
F
BR
R
F
3.0 V
O
amb
1.6 1.9 V
0.5 10 µA
125 pF
1.7 mV/°C
Document Number 83668
Rev. 1.4, 27-Apr-04
VISHAY
Output
Parameter Test condition Part Symbol Min Ty p. Max Unit
Logic low supply current I
Logic high supply current I
Output voltage, output low I
Output current, output high I
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Capacitance (input-output) f = 1.0 MHz C
Current Transfer Ratio
Parameter Test condition Part Symbol Min Ty p. Max Unit
Current Transfer Ratio I
= 16 mA, VO open, VCC = 15 V I
F
= 0 mA, VO open, VCC = 15 V I
F
= 16 mA, VCC = 4.5 V,
F
I
= 1.1 mA
O
I
= 16 mA, VCC = 4.5 V,
F
I
= 2.4 mA
O
= 0 mA, VO = VCC = 5.5 V I
F
= 0 mA, VO = VCC = 15 V I
I
F
= 16 mA, VO = 0.4 V,
F
= 4.5 V
V
CC
SFH6135 V
SFH6136 V
SFH6135 CTR 7 16 %
SFH6136 CTR 19 35 %
= 16 mA, VO = 0.5 V,
I
F
V
= 4.5 V
CC
SFH6135 CTR 5 %
SFH6136 CTR 15 %
SFH6135/ SFH6136
Vishay Semiconductors
CCL
CCH
OL
OL
OH
OH
IO
150 µA
0.01 1.0 µA
0.1 0.4 V
0.1 0.4 V
3.0 500 nA
0.01 1.0 µA
0.6 pF
Pulse generator Z
=50
O
t
tf=5ns
,
r
duty cycle 10% t100 µs
I
Monitor
F
isfh6135_01
Fig. 1 Schematics
I
F
100
I
F
t
R
L
C 15 pF
5V
V
L
V
O
O
V
OL
t
PHL
t
PLH
5V
1.5 V
t
1
2
3
4
ı
8
7
6
5
Document Number 83668
Rev. 1.4, 27-Apr-04
www.vishay.com
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