VISHAY SFH6135, SFH6136 User Manual

SFH6135/ SFH6136

i179081

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2

3

4

8

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C(VCC)

NC

A

C

NC

B(V

B

)

C(V

O

)

E (GND)

Vishay Semiconductors

High Speed Optocoupler, 1 MBd, Transistor Output

Features

• Isolation Test Voltage: 5300 V

• TTL Compatible

• High Bit Rates: 1.0 Mbit/s

• High Common-mode Interference Immunity

• Bandwidth 2.0 MHz

• Open-collector Output

• External Base Wiring Possible

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

RMS

e3

Pb

Pb-free

Agency Approvals

• UL1577, File No. E52744 System Code H or J,
Double Protection

• CSA 93751

• DIN EN 60747-5-2 (VDE0884)

Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible refer­ence voltages.

DIN EN 60747-5-5 pending
Available with Option 1

Description

The SFH6135 and SFH6136 optocouplers feature a
high signal transmission rate and a high isolation
resistance. They have a GaAIAs infrared emitting

Order Information

Part Remarks

SFH6135 CTR ≥ 7.0 %, DIP-8

SFH6136 CTR ≥ 19 %, DIP-8

For additional information on the available options refer to
Option Information.

diode, optically coupled with an integrated photo
detector which consists of a photo diode and a high­speed transistor in a DIP-8 plastic package.

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage V

Forward current I

Peak forward current t = 1.0 ms, duty cycle 50 % I

Maximum surge forward current t ≤ 1.0 µs, 300 pulses/s I

Thermal resistance R

Power dissipation P

R

F

FM

FSM

thja

diss

3.0 V

25 mA

50 mA

1.0 A

700 K/W

45 mW

Document Number 83668

Rev. 1.5, 26-Oct-04

www.vishay.com

1

SFH6135/ SFH6136

VISHAY

Vishay Semiconductors

Output

Parameter Test condition Symbol Va lue Unit

Supply voltage V

Output voltage V

Emitter-base voltage V

Output current I

Maximum output current I

Base current I

Thermal resistance R

Power dissipation T

= 70 °C P

amb

S

O

EBO

O

O

B

thja

diss

- 0.5 to 30 V

- 0.5 to 25 V

5.0 V

8.0 mA

16 mA

5.0 mA

300 K/W

100 mW

Coupler

Parameter Test condition Symbol Va lue Unit

Isolation test voltage V

ISO

Pollution degree (DIN VDE

0110)

Creepage ≥ 7.0 mm

Clearance ≥ 7.0 mm

Comparative tracking index per
DIN IEC 112/VDE 0303 part 1

Isolation resistance V

= 500 V, T

IO

V

= 500 V, T

IO

Storage temperature range T

Ambient temperature range T

Soldering temperature max. ≤10 s, dip soldering

= 25 °C R

amb

= 100 °C R

amb

T

IO

IO

stg

amb

sld

≥ 0.5 mm distance from case
bottom

5300 V

2

175

12

≥ 10

11

≥ 10

- 55 to + 125 °C

- 55 to + 100 °C

260 °C

RMS

Ω

Ω

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Breakdown voltage I

Reverse current V

Capacitance V

Temperature coefficient of
forward voltage

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2

= 16 mA V

F

= 10 µAV

R

= 3.0 V I

R

= 0 V, f = 1.0 MHz C

R

I

= 16 mA ∆VF/∆T

F

BR

R

F

3.0 V

O

amb

1.6 1.9 V

0.5 10 µA

125 pF

1.7 mV/°C

Document Number 83668

Rev. 1.5, 26-Oct-04

VISHAY

Output

Parameter Test condition Part Symbol Min Ty p. Max Unit

Logic low supply current I

Logic high supply current I

Output voltage, output low I

Output current, output high I

Coupler

Parameter Test condition Symbol Min Ty p . Max Unit

Capacitance (input-output) f = 1.0 MHz C

Current Transfer Ratio

Parameter Test condition Part Symbol Min Ty p. Max Unit

Current Transfer Ratio I

= 16 mA, VO open, VCC = 15 V I

F

= 0 mA, VO open, VCC = 15 V I

F

= 16 mA, VCC = 4.5 V,

F

= 1.1 mA

I

O

I

= 16 mA, VCC = 4.5 V,

F

= 2.4 mA

I

O

= 0 mA, VO = VCC = 5.5 V I

F

I

= 0 mA, VO = VCC = 15 V I

F

= 16 mA, VO = 0.4 V,

F

= 4.5 V

V

CC

SFH6135 V

SFH6136 V

SFH6135 CTR 7 16 %

SFH6136 CTR 19 35 %

= 16 mA, VO = 0.5 V,

I

F

V

= 4.5 V

CC

SFH6135 CTR 5 %

SFH6136 CTR 15 %

SFH6135/ SFH6136

Vishay Semiconductors

CCL

CCH

OL

OL

OH

OH

IO

150 µA

0.01 1.0 µA

0.1 0.4 V

0.1 0.4 V

3.0 500 nA

0.01 1.0 µA

0.6 pF

isfh6135_01

Pulse generator
Z

=50Ω

O

t

tf=5ns

,

r

duty cycle 10%
t≤100 µs

I

F

I

Monitor

F

100

I

F

t

R

L

C
15 pF

5V

V

L

V

O

O

V

OL

t

PHL

t

PLH

5V

1.5 V

t

1

2

3

4

Ω

ı

8

7

6

5

Figure 1. Schematics

Document Number 83668

Rev. 1.5, 26-Oct-04

www.vishay.com

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