VISHAY SFH608 User Manual
SFH608
i179004i179004
1
2
3
6
5
4
B
C
E
A
C
NC
Vishay Semiconductors
Optocoupler, Phototransistor Output, Low Input Current, With
Base Connection, 5300 V
RMS
Features
• Very High CTR at IF = 1.0 mA, VCE = 0.5 V
• Specified Minimum CTR at I
•V
= 1.5 V ≥ 32 % (typ. 120 %)
CE
= 0.5 mA,
F
• Good CTR Linearity with Forward Current
• Low CTR Degradation
• High Collector-Emitter Voltage V
• Isolation Test Voltage: 5300 V
RMS
CEO
= 55 V
• Low Current Input
• Low Coupling Capacitance
• High Common Mode Transient Immunity
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• CSA 93751
• BSI IEC60950 IEC60065
Applications
Telecommunications
Industrial Controls
Office Machines
Microprocessor System Interfaces
e3
Pb
Pb-free
Description
The SFH 608 is an optocoupler designed for high current transfer ratio at low input currents with the output
transistor saturated. This makes the device ideal for
low current switching applications. The SFH608 is
packaged in a six pin plastic DIP.
Order Information
Part Remarks
SFH608-2 CTR 63 - 125 %, DIP-6
SFH608-3 CTR 100 - 200 %, DIP-6
SFH608-4 CTR 160 - 320 %, DIP-6
SFH608-5 CTR 250 - 500 %, DIP-6
SFH608-2-X006 CTR 63 - 125 %, DIP-6 400 mil (option 6)
SFH608-2-X007 CTR 63 - 125 %, SMD-6 (option 7)
SFH608-2-X009 CTR 63 - 125 %, SMD-6 (option 9)
SFH608-3-X006 CTR 100 - 200 %, DIP-6 400 mil (option 6)
SFH608-3-X007 CTR 100 - 200 %, SMD-6 (option 7)
SFH608-4-X006 CTR 160 - 320 %, DIP-6 400 mil (option 6)
SFH608-4-X007 CTR 160 - 320 %, SMD-6 (option 7)
SFH608-5-X007 CTR 250 - 500 %, SMD-6 (option 7)
For additional information on the available options refer to
Option Information.
Document Number 83664
Rev. 1.4, 26-Oct-04
www.vishay.com
1
SFH608
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
DC Forward current I
Surge forward current t ≤ 10 µsI
Total power dissipation P
R
F
FSM
diss
Output
Parameter Test condition Symbol Val ue Unit
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Surge collector current tp ≤ 1.0 ms 100 mA
Total power dissipation P
CE
CBO
EBO
C
diss
6.0 V
50 mA
2.5 A
70 mW
55 V
55 V
7.0 V
50 mA
150 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage (between
emitter and detector, refer to
t = 1.0 s V
ISO
climate DIN 40046 part 2
Nov. 74)
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance V
= 500 V, T
IO
V
= 500 V, T
IO
Storage temperature range T
Operating temperature range T
Soldering temperature max. 10 s, dip soldering:
= 25 °C R
amb
= 100 °C R
amb
T
IO
IO
stg
amb
sld
distance to seating plane
≥ 1.5 mm
5300 V
175
12
≥ 10
11
≥ 10
- 55 to + 150 °C
- 55 to + 100 °C
260 °C
RMS
Ω
Ω
www.vishay.com
2
Document Number 83664
Rev. 1.4, 26-Oct-04
SFH608
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse voltage I
Reverse current V
Capacitance V
= 5.0 mA V
F
= 10 µAV
R
= 6.0 V I
R
= 0 V, f = 1.0 MHz C
R
Thermal resistance R
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Voltage, collector-emitter I
Voltage, emitter-base I
Collector-emitter capacitance V
Collector - base capacitance V
Emitter - base capacitance V
Thermal resistance R
Collector-emitter leakage
current
= 10 µAV
CE
= 10 µAV
EB
= 5.0, f = 1.0 MHz C
CE
= 5.0, f = 1.0 MHz C
CE
= 5.0, f = 1.0 MHz C
CE
V
= 10 V I
CE
R
thja
CEO
EBO
CE
CB
EB
thja
CEO
F
R
O
6.0 V
55 V
7.0 V
1.1 1.5 V
0.01 10 µA
25 pF
1070 K/W
10 pF
16 pF
10 pF
500 K/W
10 200 nA
Coupler
Parameter Test condition Part Symbol Min Ty p . Max Unit
Coupling capacitance C
Saturation voltage, collectoremitter
I
= 0.32 mA, IF = 1.0 mA SFH608-2 V
C
= 0.5 mA, IF = 1.0 mA SFH608-3 V
I
C
I
= 0.8 mA, IF = 1.0 mA SFH608-4 V
C
I
= 01.25 mA, IF = 1.0 mA SFH608-5 V
C
Current Transfer Ratio
Parameter Test condition Part Symbol Min Ty p . Max Unit
Coupling Transfer Ratio I
= 1.0 mA, VCE = 0.5 V SFH608-2 CTR 63 125 %
F
I
= 0.5 mA, VCE = 1.5 V SFH608-2 CTR 32 75 %
F
I
= 1.0 mA, VCE = 0.5 V SFH608-3 CTR 100 200 %
F
I
= 0.5 mA, VCE = 1.5 V SFH608-3 CTR 50 120 %
F
I
= 1.0 mA, VCE = 0.5 V SFH608-4 CTR 160 320 %
F
I
= 0.5 mA, VCE = 1.5 V SFH608-4 CTR 80 200 %
F
I
= 1.0 mA, VCE = 0.5 V SFH608-5 CTR 250 500 %
F
I
= 0.5 mA, VCE = 1.5 V SFH608-5 CTR 125 300 %
F
C
CEsat
CEsat
CEsat
CEsat
0.60 pF
0.25 0.4 V
0.25 0.4 V
0.25 0.4 V
0.25 0.4 V
Document Number 83664
Rev. 1.4, 26-Oct-04
www.vishay.com
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