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SFH608
i179004i179004
1
2
3
6
5
4
B
C
E
A
C
NC
Vishay Semiconductors
Optocoupler, Phototransistor Output, Low Input Current, With
Base Connection, 5300 V
RMS
Features
• Very High CTR at IF = 1.0 mA, VCE = 0.5 V
• Specified Minimum CTR at I
•V
= 1.5 V ≥ 32 % (typ. 120 %)
CE
= 0.5 mA,
F
• Good CTR Linearity with Forward Current
• Low CTR Degradation
• High Collector-Emitter Voltage V
• Isolation Test Voltage: 5300 V
RMS
CEO
= 55 V
• Low Current Input
• Low Coupling Capacitance
• High Common Mode Transient Immunity
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• CSA 93751
• BSI IEC60950 IEC60065
Applications
Telecommunications
Industrial Controls
Office Machines
Microprocessor System Interfaces
e3
Pb
Pb-free
Description
The SFH 608 is an optocoupler designed for high current transfer ratio at low input currents with the output
transistor saturated. This makes the device ideal for
low current switching applications. The SFH608 is
packaged in a six pin plastic DIP.
Order Information
Part Remarks
SFH608-2 CTR 63 - 125 %, DIP-6
SFH608-3 CTR 100 - 200 %, DIP-6
SFH608-4 CTR 160 - 320 %, DIP-6
SFH608-5 CTR 250 - 500 %, DIP-6
SFH608-2-X006 CTR 63 - 125 %, DIP-6 400 mil (option 6)
SFH608-2-X007 CTR 63 - 125 %, SMD-6 (option 7)
SFH608-2-X009 CTR 63 - 125 %, SMD-6 (option 9)
SFH608-3-X006 CTR 100 - 200 %, DIP-6 400 mil (option 6)
SFH608-3-X007 CTR 100 - 200 %, SMD-6 (option 7)
SFH608-4-X006 CTR 160 - 320 %, DIP-6 400 mil (option 6)
SFH608-4-X007 CTR 160 - 320 %, SMD-6 (option 7)
SFH608-5-X007 CTR 250 - 500 %, SMD-6 (option 7)
For additional information on the available options refer to
Option Information.
Document Number 83664
Rev. 1.4, 26-Oct-04
www.vishay.com
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SFH608
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
DC Forward current I
Surge forward current t ≤ 10 µsI
Total power dissipation P
R
F
FSM
diss
Output
Parameter Test condition Symbol Val ue Unit
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Surge collector current tp ≤ 1.0 ms 100 mA
Total power dissipation P
CE
CBO
EBO
C
diss
6.0 V
50 mA
2.5 A
70 mW
55 V
55 V
7.0 V
50 mA
150 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage (between
emitter and detector, refer to
t = 1.0 s V
ISO
climate DIN 40046 part 2
Nov. 74)
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance V
= 500 V, T
IO
V
= 500 V, T
IO
Storage temperature range T
Operating temperature range T
Soldering temperature max. 10 s, dip soldering:
= 25 °C R
amb
= 100 °C R
amb
T
IO
IO
stg
amb
sld
distance to seating plane
≥ 1.5 mm
5300 V
175
12
≥ 10
11
≥ 10
- 55 to + 150 °C
- 55 to + 100 °C
260 °C
RMS
Ω
Ω
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Document Number 83664
Rev. 1.4, 26-Oct-04
Page 3
SFH608
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse voltage I
Reverse current V
Capacitance V
= 5.0 mA V
F
= 10 µAV
R
= 6.0 V I
R
= 0 V, f = 1.0 MHz C
R
Thermal resistance R
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Voltage, collector-emitter I
Voltage, emitter-base I
Collector-emitter capacitance V
Collector - base capacitance V
Emitter - base capacitance V
Thermal resistance R
Collector-emitter leakage
current
= 10 µAV
CE
= 10 µAV
EB
= 5.0, f = 1.0 MHz C
CE
= 5.0, f = 1.0 MHz C
CE
= 5.0, f = 1.0 MHz C
CE
V
= 10 V I
CE
R
thja
CEO
EBO
CE
CB
EB
thja
CEO
F
R
O
6.0 V
55 V
7.0 V
1.1 1.5 V
0.01 10 µA
25 pF
1070 K/W
10 pF
16 pF
10 pF
500 K/W
10 200 nA
Coupler
Parameter Test condition Part Symbol Min Ty p . Max Unit
Coupling capacitance C
Saturation voltage, collectoremitter
I
= 0.32 mA, IF = 1.0 mA SFH608-2 V
C
= 0.5 mA, IF = 1.0 mA SFH608-3 V
I
C
I
= 0.8 mA, IF = 1.0 mA SFH608-4 V
C
I
= 01.25 mA, IF = 1.0 mA SFH608-5 V
C
Current Transfer Ratio
Parameter Test condition Part Symbol Min Ty p . Max Unit
Coupling Transfer Ratio I
= 1.0 mA, VCE = 0.5 V SFH608-2 CTR 63 125 %
F
I
= 0.5 mA, VCE = 1.5 V SFH608-2 CTR 32 75 %
F
I
= 1.0 mA, VCE = 0.5 V SFH608-3 CTR 100 200 %
F
I
= 0.5 mA, VCE = 1.5 V SFH608-3 CTR 50 120 %
F
I
= 1.0 mA, VCE = 0.5 V SFH608-4 CTR 160 320 %
F
I
= 0.5 mA, VCE = 1.5 V SFH608-4 CTR 80 200 %
F
I
= 1.0 mA, VCE = 0.5 V SFH608-5 CTR 250 500 %
F
I
= 0.5 mA, VCE = 1.5 V SFH608-5 CTR 125 300 %
F
C
CEsat
CEsat
CEsat
CEsat
0.60 pF
0.25 0.4 V
0.25 0.4 V
0.25 0.4 V
0.25 0.4 V
Document Number 83664
Rev. 1.4, 26-Oct-04
www.vishay.com
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SFH608
Vishay Semiconductors
Switching Characteristics
Parameter Test condition Symbol Min Ty p. Max Unit
Turn-on time I
Rise time I
Turn-off time I
Fall time I
= 2.0 mA (to adjust by IF),
C
= 100 Ω, VCC = 5.0 V
R
L
= 2.0 mA (to adjust by IF),
C
= 100 Ω, VCC = 5.0 V
R
L
= 2.0 mA (to adjust by IF),
C
R
= 100 Ω, VCC= 5.0 V
L
= 2.0 mA (to adjust by IF),
C
= 100 Ω, VCC = 5.0 V
R
L
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
t
on
t
r
t
off
t
f
8.0 µs
5.0 µs
7.5 µs
7.0 µs
isfh608_01
I
F
R
L
I
C
47 Ω
Figure 1. Switching Schematic
IF= 1.0 mA,
VCE= 5.0 V, tON,tR,
t
,=f(RL)
OFF,tF
V
CC
VCE= 0.5 V,
CTR=f(TA,IF)
isfh608_03
Figure 3. Current Transfer Ratio (typ.)
VCE= 1.5 V,
CTR=f(TA,IF)
isfh608_02
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Figure 2. Switching Times
isfh608_04
Figure 4. Current Transfer Ratio (typ.)
Document Number 83664
Rev. 1.4, 26-Oct-04
Page 5
SFH608
Vishay Semiconductors
isfh608_05
VF=f(IF)
Figure 5. Diode Forward Voltage (typ.)
IF= 1.0 mA, VF=f(TA)
isfh608_08
ICE=f
(VCE,IF)
Figure 8. Output Characteristics
IF=f(TA)
isfh608_06
isfh608_07
Figure 6. Diode Forward Voltage (typ.)
ICE=f
(VCE,IB)
Figure 7. Output Characteristics
isfh608_09
Figure 9. Permissible Forward Current Diode
P
=f(TA)
tot
isfh608_10
Figure 10. Permissible Power Dissipation for Transistor and Diode
Document Number 83664
Rev. 1.4, 26-Oct-04
www.vishay.com
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SFH608
Vishay Semiconductors
f=1.0 MHz,CCE=f (VCE)
CCB=f (VCB),
CEB=f (VEB)
IF=0,VCE=10V,
I
=f(TA)
CEO
isfh608_11
Figure 11. Transistor Capacitance
Package Dimensions in Inches (mm)
pin one ID
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.248 (6.30)
.256 (6.50)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
i178004
3
4
5
.335 (8.50)
.343 (8.70)
12
6
.048 (0.45)
.022 (0.55)
isfh608_12
Figure 12. Collector-Emitter Leakage Current vs.Temp.
ISO Method A
.300 (7.62)
typ.
3°–9°
18°
.010 (.25)
.114 (2.90)
.130 (3.0)
typ.
.300–.347
(7.62–8.81)
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Document Number 83664
Rev. 1.4, 26-Oct-04
Page 7
SFH608
Vishay Semiconductors
Option 6
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.028 (0.7)
MIN.
Option 7
.300 (7.62)
TYP.
.315 (8.0)
MIN.
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
.012 (.30) typ.
15° max.
18450
Document Number 83664
Rev. 1.4, 26-Oct-04
www.vishay.com
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SFH608
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 83664
Rev. 1.4, 26-Oct-04
Page 9
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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