VISHAY SF4001, SF4002, SF4003, SF4004, SF4005 User Manual

SF4001 / 2 / 3 / 4 / 5 / 6 / 7

Ultra Fast Avalanche Sinterglass Diode

Features

• Glass passivated

• Hermetically sealed axial leaded glass
envelope

• Low reverse current

• High reverse voltage

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

e2

Vishay Semiconductors

949539

Applications

Switched mode power supplies
High-frequency inverter circuits

Mechanical Data

Case: SOD-57 Sintered glass case

Parts Table

Part Type differentiation Package

SF4001 V

SF4002 V

SF4003 V

SF4004 V

SF4005 V

SF4006 V

SF4007 V

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Part Symbol Val ue Unit

Reverse voltage = Repetitive
peak reverse voltage

Peak forward surge current t

see electrical characteristics SF4001 V

= 10 ms, half sinewave I

p

= 50 V; I

R

= 100 V; I

R

= 200 V; I

R

= 400 V; I

R

= 600 V; I

R

= 800 V; I

R

= 1000 V; I

R

Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg

= 1 A SOD-57

FAV

= 1 A SOD-57

FAV

= 1 A SOD-57

FAV

= 1 A SOD-57

FAV

= 1 A SOD-57

FAV

= 1 A SOD-57

FAV

= 1 A SOD-57

FAV

= V

R

SF4002 V

SF4003 V

SF4004 V

SF4005 V

SF4006 V

SF4007 V

R

R

R

R

R

R

= V

= V

= V

= V

= V

= V

FSM

RRM

RRM

RRM

RRM

RRM

RRM

RRM

50 V

100 V

200 V

400 V

600 V

800 V

1000 V

30 A

Document Number 86060

Rev. 1.7, 14-Apr-05

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1

SF4001 / 2 / 3 / 4 / 5 / 6 / 7

Vishay Semiconductors

Parameter Test condition Part Symbol Val ue Unit

Average forward current Lead length l = 10 mm I

Junction and storage
temperature range

Non repetitive reverse
avalanche energy

Maximum Thermal Resistance

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Value Unit

Junction ambient Lead length l = 10 mm,

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Par t Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

Reverse breakdown voltage I

Reverse recovery time I

= 0.4 A E

I

(BR)R

R

= constant

T

L

on PC board neith spacing
25 mm

= 1 A SF4001-

F

SF4004

thJA

R

thJA

SF4005-

SF4007

= V

R

RRM

V

= V

R

= 100 µA SF4001 V

R

, Tj = 125 °C I

RRM

SF4002 V

SF4003 V

SF4004 V

SF4005 V

SF4006 V

SF4007 V

= 0.5 A, IR = 1 A, iR = 0.25 A SF4001-

F

SF4004

SF4005-

SF4007

V

F

V

F

I

R

R

(BR)R

(BR)R

(BR)R

(BR)R

(BR)R

(BR)R

(BR)R

t

rr

t

rr

FAV

T

= T

j

stg

R

1A

- 55 to + 175 °C

10 mJ

45 K/W

100 K/W

1V

1.7 V

5 µA

50 µA

50 V

100 V

200 V

400 V

600 V

800 V

1000 V

50 ns

75 ns

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Document Number 86060

Rev. 1.7, 14-Apr-05

SF4001 / 2 / 3 / 4 / 5 / 6 / 7

Vishay Semiconductors

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

120

100

80

60

ll

40

20

thJA

R - Therm. Resist. Junction/Ambient (K/W)

94 9552

0

0

51015 25

l - Lead Length ( mm )

TL= constant

20

30

Figure 1. Max. Thermal Resistance vs. Lead Length

2.0
SF4001...SF4004

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

FAV

I –Average Forward Current( A )

0.0

0 20 40 60 80 100 120 140 160 180

T

96 12052

– Ambient Temperature (°C )

amb

R

Figure 4. Max. Average Forward Current vs. Ambient Temperature

VR=V

≤

f 1 kHz

45 K/W

≤

thJA

l=10mm

RRM

2.0
SF4001...SF4004

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

FAV

I –Average Forward Current( A )

0.0

0 20 40 60 80 100 120 140 160 180

T

96 12130

– Ambient Temperature ( °C )

amb

VR=V

R

thJA

PCBoard

RRM

≤

f 1 kHz

100 K/W

≤

Figure 2. Max. Average Forward Current vs. Ambient Temperature

2.0
SF4005...SF4007

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

FAV

I –Average Forward Current( A )

0.0

0 20 40 60 80 100 120 140 160 180

T

96 12131

– Ambient Temperature ( °C )

amb

VR=V

R

thJA

PCBoard

RRM

≤

f 1 kHz

100 K/W

≤

2.0
SF4005...SF4007

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

FAV

I –Average Forward Current( A )

0.0

0 20 40 60 80 100 120 140 160 180

T

96 12053

– Ambient Temperature ( °C )

amb

VR=V

≤

f 1 kHz

R

thJA

l=10mm

45 K/W

≤

RRM

Figure 5. Max. Average Forward Current vs. Ambient Temperature

10.000

I – Forward Current (A )

96 12048

SF4001...SF4004

1.000

Tj= 175°C

Tj=25°C

0.100

0.010

F

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF– Forward Voltage(V)

Figure 3. Max. Average Forward Current vs. Ambient Temperature

Document Number 86060

Rev. 1.7, 14-Apr-05

Figure 6. Max. Forward Current vs. Forward Voltage

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3

SF4001 / 2 / 3 / 4 / 5 / 6 / 7

Vishay Semiconductors

10.000

I – Forward Current (A )

96 12050

SF4005...SF4007

1.000

Tj=175°C

0.100

Tj=25°C

0.010

F

0.001

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0

VF– Forward Voltage(V)

Figure 7. Max. Forward Current vs. Forward Voltage

1000

SF4001...SF4007 VR=V

100

10

R

I – Reverse Current (A )

1

25 50 75 100 125 150 175

96 12056

Tj– Junction Temperature ( °C )

RRM

500

450

400

350

300

250

200

150

16476

100

50

R

P – Reverse Power Dissipation ( mW )

P

0

25 50 75 100 125 150 175

P

R

SF4007

P

–Limit @80 % V

R

SF4004

–Limit @100 % V

P

R

SF4004

–Limit @80 % V

R

Tj– Junction Temperature (°C )

VR=V

SF4007

–Limit @100 % V

R

R

R

RRM

R

Figure 9. Max. Reverse Power Dissipation vs. Junction

Temperature

50

45

40

35

30

25

16477

20

15

10

D

C – Diode Capacitance ( pF )

5

0

SF4007

0.1 1.0 10.0 100.0

SF4004

VR– Reverse Voltage(V)

f=1MHz

Figure 8. Max. Reverse Current vs. Junction Temperature

Package Dimensions in mm (Inches)

Sintered Glass Case
SOD-57

26(1.014) min.

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4

CathodeIdentification

4.0 (0.156) max.

Figure 10. Diode Capacitance vs. Reverse Voltage

3.6 (0.140)max.

26(1.014) min.

94 9538

ISO Method E

0.82 (0.032) max.

Document Number 86060

Rev. 1.7, 14-Apr-05

SF4001 / 2 / 3 / 4 / 5 / 6 / 7

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number 86060

Rev. 1.7, 14-Apr-05

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5

Legal Disclaimer Notice

Vishay

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.