Vishay SD703CL User Manual

DO-200AB (B-PUK)

PRODUCT SUMMARY

I

F(AV)

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 700/790 A

FEATURES

• High power FAST recovery diode series

• 2.0 to 3.0 µs recovery time

• High voltage ratings up to 2500 V

• High current capability

• Optimized turn-on and turn-off characteristics

• Low forward recovery

• Fast and soft reverse recovery

• Press PUK encapsulation

• Case style conform to JEDEC DO-200AB (B-PUK)

• Maximum junction temperature 150 °C

• Lead (Pb)-free

• Designed and qualified for industrial level

700/790 A

TYPICAL APPLICATIONS

• Snubber diode for GTO

• High voltage freewheeling diode

• Fast recovery rectifier applications

SD703C..L Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS

I

F(AV)

I

F(RMS)

I

FSM

V

RRM

t

rr

T

J

T

hs

50 Hz 9300 9600

60 Hz 9730 10 050

Range 1200 to 2500 V

T

J

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

, MAXIMUM REPETITIVE

V

TYPE NUMBER

SD703C..L

VOLTAGE

CODE

12 1200 1300

16 1600 1700

20 2000 2100

25 2500 2600

RRM

PEAK REVERSE VOLTAGE

V

SD703C..L

S20 S30

700 790 A

55 55 °C

1320 1470

2.0 3.0 µs

25

- 40 to 150

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

UNITS

I

RRM

AT T

= TJ MAXIMUM

J

A

°C

MAXIMUM

mA

50

Document Number: 93179 For technical questions, contact: [e-mail]
Revision: 14-May-08 1

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SD703C..L Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version),

700/790 A

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS

Maximum average forward current
at heatsink temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4320 4600 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward
slope resistance

High level value of forward
slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

r

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 1320 1470

t = 10 ms

t = 8.3 ms 9730 10 050

t = 10 ms

t = 8.3 ms 8190 8450

t = 10 ms

t = 8.3 ms 395 420

t = 10 ms

t = 8.3 ms 279 297

(16.7 % x π x I
(I > π x I

(16.7 % x π x I

f1

(I > π x I

f2

Ipk = 1500 A, TJ = TJ maximum,

FM

= 10 ms sinusoidal wave

t

p

No voltage
reapplied

100 % V

RRM

reapplied

No voltage

Sinusoidal half wave,
initial T

reapplied

100 % V

RRM

reapplied

< I < π x I

F(AV)

), TJ = TJ maximum 1.11 1.05

F(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.76 0.56

T(AV)

F(AV)

T(AV)

SD703C..L

S20 S30

700 (365) 790 (400) A

55 (85) 55 (85) °C

9300 9600

7820 8070

= TJ maximum

J

432 460

306 326

), TJ = TJ maximum 1.00 0.95

), TJ = TJ maximum 0.80 0.60

2.20 1.85 V

UNITS

A

2

kA

V

mΩ

s

RECOVERY CHARACTERISTICS

CODE

MAXIMUM VALUE

AT T

= 25 °C

J

t

AT 25 % I

rr

RRM

(µs)

TEST CONDITIONS

I

pk

SQUARE

PULSE

dI/dt

(A/µs)

V

(V)

t

r

rr

(A)

S20 2.0

S30 3.0 5.0 380 130

1000 50 - 50

TYPICAL VALUES

= 150 °C

AT T

J

AT 25 % I

(µs)

RRM

Q

(µC)

rr

3.5 240 110

I

(A)

I

rr

FM

t

rr

I

RM(REC)

t

Q

rr

dir

dt

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
and storage temperature range

Maximum thermal resistance,
case junction to heatsink

Mounting force, ± 10 %

Approximate weight 250 g

Case style See dimensions - link at the end of datasheet DO-200AB (B-PUK)

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2 Revision: 14-May-08

T

R

, T

J

thJ-hs

Stg

DC operation single side cooled 0.092

DC operation double side cooled 0.046

- 40 to 150 °C

K/W

9800

(1000)

N

(kg)

Document Number: 93179

SD703C..L Series

Fast Recovery Diodes

(Hockey PUK Version),

ΔR

CONDUCTION ANGLE

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.011 0.011 0.008 0.008

120° 0.013 0.014 0.013 0.013

90° 0.017 0.017 0.018 0.018

60° 0.024 0.025 0.026 0.026

30° 0.043 0.043 0.043 0.044

160

140

120

100

SD703C..S20L Se rie s
(Single Side Cooled)
R (DC) = 0.092 K/ W

thJ-hs

Cond uction Angle

Vishay High Power Products

700/790 A

TEST CONDITIONS UNITS

T

= TJ maximum K/W

J

when devices operate at different conduction angles than DC

thJ-hs

160

140

120

100

SD 70 3 C . . S3 0L Se r i e s
(Single Side Cooled)
R (DC) = 0.092 K/W

thJ-hs

Cond uction Ang le

80

60

40

20

0 100200300400500600

Maximum Allowable Heatsink Temperature (°C)

Average Forward Current (A)

30°

60°

90°

120°

Fig. 1 - Current Ratings Characteristics

160

140

120

100

80

60

40

20

0

0 100 200 300 400 500 600 700 800 900

Maximum Allowable Heatsink Temperature (°C)

SD703C..S20L Se rie s
(Single Side Cooled)
R (DC) = 0.092 K/ W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

Average Forward Current (A)

Fig. 2 - Current Ratings Characteristics

DC

180°

80

60

40

20

0 100 200 300 400 500 600

Maximum Allowable Heatsink Temperature (°C)

30°

60°

90°

Average Forward Current (A)

Fig. 3 - Current Ratings Characteristics

160

140

120

100

80

60

40

20

0

0 200 400 600 800 1000

Maximum Allowable Heatsink Temperature (°C)

SD703C .. S30L Se ries
(Single Side Cooled)
R (DC) = 0.092 K/ W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

Average Forward Current (A)

Fig. 4 - Current Ratings Characteristics

120°

180°

DC

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Revision: 14-May-08 3

SD703C..L Series

Vishay High Power Products

160

140

120

100

80

60

40

20

0

0 100 200 300 400 500 600 700 800 900

Maximum Allowable Heatsink Temperature (°C)

Fig. 5 - Current Ratings Characteristics

160

140

120

100

80

60

40

20

0

0 200 400 600 800 1000 1200 1400

Maximum Allowab le Heatsink Te mperature (°C)

Fig. 6 - Current Ratings Characteristics

SD703C..S20L Series
(Double Side Cooled)
R (DC) = 0.046 K/ W

thJ-hs

Conduction Angle

30°

60°

90°

120°

Average Forward Current (A)

SD703C ..S20L Se ries
(Double Side Cooled)
R ( DC) = 0.046 K/W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

Average Forward Current (A)

Fast Recovery Diodes

(Hockey PUK Version),

700/790 A

180°

DC

160

140

120

100

80

60

40

20

0

0 250 500 750 1000 1250 1500

Maximum Allowa ble Heatsink Te mperature (°C)

Average Forward Current (A)

SD 7 0 3C . . S3 0 L Se r ie s
(Double Side Cooled)
R ( DC) = 0.046 K/W

thJ-hs

30°

60°

90°

120°

Conduction Period

180°

Fig. 8 - Current Ratings Characteristics

2500

2000

1500

1000

500

Maximum Average Forward Power Loss (W)

180°
120°

90°
60°
30°

SD703C ..S20L Se rie s
T = 1 50 °C

0

0 100 200 300 400 500 600 700 800 900

Average Forward Current (A)

J

RM S Li m i t

Cond uction Angle

Fig. 9 - Forward Power Loss Characteristics

DC

160

140

120

100

80

60

40

20

0

0 200 400 600 800 1000

Maximum Allowable Heatsink Temperature (°C)

SD703C ..S30L Se rie s
(Double Side Cooled)
R (DC) = 0.046 K/ W

thJ-hs

Conduction Angle

30°

60°

90°

Average Forward Current (A)

Fig. 7 - Current Ratings Characteristics

120°

180°

3000

DC

180°

2500

120°

90°

2000

60°
30°

1500

1000

500

0

Maximum Average Forward Power Loss (W)

0 200 400 600 800 1000 1200 1400

Ave rag e Fo rw a rd Cu rren t (A )

SD 70 3C . . S20 L Se r i e s
T = 1 50 ° C

J

RM S Li m i t

Cond uct ion Period

Fig. 10 - Forward Power Loss Characteristics

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Document Number: 93179

4 Revision: 14-May-08

SD703C..L Series

2500

180°

2000

1500

1000

500

Maximum Average Forward Power Loss (W)

120°

90°
60°
30°

SD703C ..S30L Se rie s
T = 150°C

J

0

0 200 400 600 800 1000

Average Forward Current (A)

RM S Li m i t

Conduction Angle

Fig. 11 - Forward Power Loss Characteristics

3000

2500

2000

1500

1000

500

Maximum Average Forward Power Loss (W)

DC
180°
120°

90°
60°
30°

RM S Lim i t

Conduction Period

SD 70 3C . . S3 0 L Se r ie s
T = 1 5 0° C

J

0

0 400 800 1200 1600

Ave ra ge Forward Curre nt (A)

Fig. 12 - Forward Power Loss Characteristics

Fast Recovery Diodes

(Hockey PUK Version),

700/790 A

Vishay High Power Products

10000

Peak Half Sine Wave Forward Current (A)

Fig. 14 - Maximum Non-Repetitive Surge Current

9000

8000

7000

6000

5000

4000

3000

Pe a k Ha l f Sine Wave Forward C urren t (A)

2000

Number Of Equal Am plitude Half Cyc le Current Pulses (N)

Fig. 15 - Maximum Non-Repetitive Surge Current

Maximum Non Repetitive Surge Current

8000

6000

4000

SD703C ..S20L Se rie s

2000

0.01 0.1 1

Versus Pulse Train Duration.

Pulse Tra in D ura t io n ( s)

Init ia l T = 150°C

No Voltage Reapplied
Ra t e d V Re a p p l ie d

RRM

J

Single and Double Side Cooled

At Any Rated Lo a d Condition A nd With

Rated V Applied Following Surge.

RRM

SD 70 3C . . S30 L Se r i e s

110100

Init ial T = 150 °C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Single and Double Side Cooled

9000

At Any Ra ted Load Condition And With

Ra ted V A pp lied Fo llowing Surg e

8000

7000

6000

5000

4000

3000

Peak Half Sine Wave Forward Current (A)

SD703C..S20L Serie s

2000

110100

Number Of Equal Amp litude Half Cyc le Current Pulses (N)

RRM

Init ia l T = 150 °C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Fig. 13 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

10000

Pe ak Ha lf Sin e Wa v e Fo rw a rd Cu rre nt (A )

Maximum Non Repetitive Surge Curre nt

9000

8000

7000

6000

5000

4000

SD 70 3 C . . S3 0 L Se r ie s

3000

2000

0.01 0.1 1

Versus Pulse Train Duration.

Pulse Train Duration (s)

Init ial T = 150°C

No Voltage Reapplied
Rated V Reapplied

RRM

J

Fig. 16 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

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Revision: 14-May-08 5

SD703C..L Series

Vishay High Power Products

10000

T = 2 5° C

J

T = 150° C

J

1000

SD703C ..S20L Se ries

In st a n ta n eo us Fo rw a rd C u rr en t ( A)

100

0.5 1 1.5 2 2. 5 3 3. 5 4 4.5 5

Instantaneous Forward Voltage (V)

Fig. 17 - Forward Voltage Drop Characteristics Fig. 18 - Forward Voltage Drop Characteristics

0.1

SD 70 3 C .. S20 / S3 0L Se ri e s

thJ-hs

Fast Recovery Diodes

(Hockey PUK Version),

700/790 A

Insta ntaneous Forward Current (A)

10000

T = 2 5 ° C

J

1000

SD703C ..S30L Se rie s

100

0.5 1 1.5 2 2.5 3 3. 5 4

Instantaneous Forward Voltage (V)

T = 15 0° C

J

0.01

0.001

Tra n si en t The rm a l I m p e d a n c e Z (K/ W )

0.001 0.01 0.1 1 10 100

100

V

FP

80

60

40

Fo rw a rd Re c ov e r y (V )

20

0

0 400 800 1200 1 600 2000

Rate Of Rise Of Forward Current - di/dt (A/us)

T = 150°C

J

I

T = 25 ° C

SD 70 3 C . . S20 L Se r i e s

J

Sq u a r e Wa v e P u l se D u r a t i o n ( s)

Fig. 19 - Thermal Impedance Z

Steady State Value

R = 0.092 K/ W

thJ-hs

(Single Side Cooled)

R = 0.046 K/ W

thJ-hs

(Double Side Cooled)

(DC Operation)

Characteristic

thJ-hs

100

V

80

60

40

Fo r w a r d Re c o v e r y ( V)

20

0

0 400 800 1200 1600 2000

Rate Of Rise Of Forward Current - di/dt (A/us)

T = 150°C

FP

I

J

T = 25 ° C

J

SD703C..S30L Series

Fig. 20 - Typical Forward Recovery Characteristics Fig. 21 - Typical Forward Recovery Characteristics

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Document Number: 93179

6 Revision: 14-May-08

SD703C..L Series

Fast Recovery Diodes

(Hockey PUK Version),

6

5.5

4.5

3.5

2.5

Maximum Reverse Rec overy Time - Trr (µs)

Rate Of Fall Of Forwa rd Current - d i/d t (A/µs)

Fig. 22 - Recovery Time Characteristics

800

700

600

500

400

300

200

100

Ma ximum Rev erse Rec ove ry C harge - Qrr (A)

Rat e Of Fa ll O f Fo rwa rd C urren t - d i/d t ( A/ µs)

SD 70 3C . . S20 L Se r i e s
T = 150 °C; V > 100V

J

r

5

I = 1000 A

FM

4

Si n e Pu l se

500 A

150 A

3

2

10 100 1000

I = 1000 A

FM

Si n e P u ls e

500 A

150 A

SD 7 0 3 C . . S20 L Se r i e s
T = 150 °C; V > 100V

J

0

0 50 100 150 200 250 300

r

700/790 A

Vishay High Power Products

7

6.5

5.5

4.5

3.5

2.5

Maximum Reverse Recovery Time - Trr (µs)

Ra te Of Fall O f Forwa rd C urrent - d i/d t ( A/µs)

Fig. 25 - Recovery Time Characteristics

1100

1000

900

800

700

600

500

400

300

200

100

Maximum Reverse Recovery Charge - Qrr (µC)

Rate Of Fall Of Forward C urrent - di/ dt (A/µs)

SD703C..S30L Se ries
T = 150 °C; V > 100V

6

J

5

4

r

I = 1000 A

FM

Si n e Pu l s e

500 A

150 A

3

2

10 100 1000

I = 1000 A

FM

Si n e Pu l se

500 A

150 A

SD 70 3 C . . S3 0L Se r ie s
T = 150 °C; V > 100V

J

0

0 50 100 150 200 250 300

r

Fig. 23 - Recovery Charge Characteristics

450

400

350

300

250

200

150

100

50

0

Ma xim um Reverse Rec overy Current - Irr (A)

050100150200250300

Ra t e O f Fa l l Of Fo rw a rd C ur re nt - d i/ d t (A / µ s)

I = 1000 A

FM

Si n e Pu l se

500 A

150 A

SD703C. .S20L Se rie s
T = 150 °C; V > 100V

J

r

Fig. 24 - Recovery Current Characteristics

Fig. 26 - Recovery Charge Characteristics

550

500

450

400

350

300

250

200

150

100

50

0

Maximum Reverse Rec overy Current - Irr (A)

050100150200250300

Ra te Of Fall Of Forward Current - di/dt (A/µs)

I = 1000 A

FM

Si n e Pu ls e

500 A

150 A

SD 70 3 C . . S3 0L Se r i e s
T = 150 °C; V > 100V

J

r

Fig. 27 - Recovery Current Characteristics

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Revision: 14-May-08 7

SD703C..L Series

Vishay High Power Products

1E4

10 joules per pulse

6

4

2

1

0.6

0.4

1E3

Peak Forward Current (A)

1E2

1E1 1E2 1E3 1E4

Fig. 28 - Maximum Total Energy Loss

1E4

1E3

Peak Forward Current (A)

1E2

1E1 1E2 1E3 1E4

Fig. 29 - Frequency Characteristics

0.2

0.1

0.08

SD70 3C..S20L Serie s
Si n u so i d a l Pu l se
T = 150°C, V = 800V

J

tp

d v/ dt = 1000V/ µs

Pulse Ba sew id t h ( µ s)

Per Pulse Characteristics

1000

2000

3000

4000

10000

15000

20000

600

400

6000

tp

Pulse Ba sew id t h ( µs)

RRM

200

SD703C..S20L Se rie s
Si n u so i d a l P u ls e
T = 55°C, V = 800V

C

dv/dt = 1000V/us

Fast Recovery Diodes

(Hockey PUK Version),

700/790 A

100

50 Hz

RRM

1E4

100

200

400

600

1000

4000

3000

2000

SD703C..S20L Series
Trapezoidal Pulse
T = 55°C, V = 800V

C

dv/dt = 1000V/us,

tp

d i/ dt = 300A/ us

1E3

6000

Peak Forward Current (A)

1E2

10000

15000

1E1 1E2 1E3 1E4

Pulse Base w id th ( µ s)

Fig. 31 - Frequency Characteristics

1E4

tp

1E3

Peak Forward Current (A)

SD 70 3 C . .S2 0 L Se r ie s
Tr a p e z o i d a l Pu l se
T = 150°C, V = 800V

J

d v/ d t = 1000 V/µ s, d i/ dt = 100A/ µ s

1E2

1E1 1E2 1E3 1E4

RRM

10 jo ules p er p ulse

6

4

2

1

0.6

0.4

0.2

Pulse Base w id th (µ s)

Fig. 32 - Maximum Total Energy Loss

Per Pulse Characteristics

50 Hz

RRM

1E4

10 joules per pulse

6

4

2

1E3

0.4

Peak Fo rward Current (A)

tp

1E2

1E1 1E2 1E3 1E4

1

0.8

0.6

SD703C..S20L Se rie s

Trapezoidal Pulse

T = 150°C, V = 800V

J

dv/dt = 1000V/µs
d i/ dt = 300A/ µs

RRM

Pu lse Ba se w id th ( µs)

Fig. 30 - Maximum Total Energy Loss

1E4

100

200

400

1000

2000

6000

4000

3000

SD703C..S20L Series

Trap ezoid al Pulse
T = 55°C, V = 800V

C

dv/dt = 1000V/us,

tp

di/dt = 100A/us

RRM

1E3

Pe ak Fo rw a rd Cu rre nt ( A)

1E2

1E1 1E2 1E3 1E4

10000

15000

20000

Pulse Ba se wi dt h ( µs)

Fig. 33 - Frequency Characteristics

50 Hz

Per Pulse Characteristics

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Document Number: 93179

8 Revision: 14-May-08

SD703C..L Series

Fast Recovery Diodes

(Hockey PUK Version),

700/790 A

1E4

10 joules per p ulse

6

4

2

1

0.6

1E3

Peak Forward Current (A)

1E2

1E11E21E31E4

Fig. 34 - Maximum Total Energy Loss

1E4

1E3

Peak Forward Current (A)

1E2

1E1 1E2 1E3 1E4

0.4

0.2

0.1

SD 70 3 C . .S3 0 L Se r i e s
Si n u so i d a l P ul se
T = 150°C, V = 800V

tp

J

dv/dt = 1000V/µs

RRM

Pulse Basew idth (µs)

Per Pulse Characteristics

2000

3000

4000

6000

10000

15000

20000

Pu lse Ba se wid t h ( µs)

1500

400

1000

SD 7 03 C . . S3 0L Se r i e s
Si n u so i d a l P u ls e
T = 55°C, V = 800V

C

dv/dt = 1000V/us

tp

100

RRM

Fig. 35 - Frequency Characteristics

50 Hz200

Vishay High Power Products

1E4

100

200

400

600

1000

1E3

Pea k Forw a rd Curre n t (A)

1E2

6000

10000

1E1 1E2 1E3 1E4

Fig. 37 - Frequency Characteristics

1E4

1E3

Pea k Fo rwa rd C urre nt ( A)

tp

1E2

1 E1 1 E2 1 E3 1 E4

Fig. 38 - Maximum Total Energy Loss

1500

2000

3000

4000

tp

Pulse Base w id t h ( µ s)

6

4

2

1

0.8

0.6

0.4

SD 70 3 C . . S30 L Se r i e s
Trapezoidal Pulse

T = 150°C, V = 800V

J

d v/ dt = 1000V/ µs
di/dt = 100A/µs

RRM

Pulse Basewidth (µs)

Per Pulse Characteristics

SD 7 03 C . . S30L Series

Tra pe zoi da l Pu lse

T = 55°C, V = 800V

C

dv/dt = 1000V/ us,
di/dt = 300A/us

10 jo ules p er p ulse

50 Hz

RRM

1E4

10 jo ule s p er pulse

6

4

2

1E3

0.6

Peak Forward Current (A)

1E2

0.4

SD70 3C..S30L Serie s
Trapezoidal Pulse
T = 15 0°C , V = 800V

tp

dv/dt = 1000V/µs, di/dt = 300A/ µs

1 E1 1 E2 1 E3 1 E4

1

0.8

J

RRM

Pulse Basewidth (µs)

Fig. 36 - Maximum Total Energy Loss

1E4

50 Hz

100

200

400

1000

1500

2000

10000

15000

6000

4000

3000

SD 7 03 C . . S30 L Se ri e s

Trapezoida l Pulse

T = 55°C, V = 800V

C

dv/dt = 1000V/us,

tp

di/dt = 100A/us

RRM

1E3

Peak Forward Current (A)

1E2

1E11E2 1E31E4

Pulse Base w id th ( µ s)

Fig. 39 - Frequency Characteristics

Per Pulse Characteristics

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Revision: 14-May-08 9

SD703C..L Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version),

700/790 A

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95246

SD 70 3 C 25 S20 L

51324

1 -Diode

2 - Essential part number

- 3 = Fast recovery

3

- C = Ceramic PUK

4

5 - Voltage code x 100 = V

6 -trr code

7 - L = PUK case DO-200AB (B-PUK)

LINKS TO RELATED DOCUMENTS

RRM

67

(see Voltage Ratings table)

www.vishay.com For technical questions, contact: [e-mail]
10 Revision: 14-May-08

Document Number: 93179

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1