Vishay SD553CS50L User Manual

DO-200AB (B-PUK)

PRODUCT SUMMARY

I

F(AV)

SD553C..S50L Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 560 A

FEATURES

• High power FAST recovery diode series

• 6.0 µs recovery time

• High voltage ratings up to 4500 V

• High current capability

• Optimized turn-on and turn-off characteristics

• Low forward recovery

• Fast and soft reverse recovery

• Press PUK encapsulation

• Case style conform to JEDEC DO-200AB (B-PUK)

• Maximum junction temperature 125 °C

• Lead (Pb)-free

560 A

TYPICAL APPLICATIONS

• Snubber diode for GTO

• High voltage freewheeling diode

• Fast recovery rectifier applications

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

V

RRM

t

rr

T

J

TEST CONDITIONS VALUES

T

hs

T

hs

50 Hz 12 000

60 Hz 12 570

50 Hz 721

60 Hz 658

Range 3000 to 4500 V

T

J

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM REPETITIVE

TYPE NUMBER

SD553C..S50L

VOLTAGE

CODE

30 3000 3100

36 3600 3700

40 4000 4100

45 4500 4600

RRM

PEAK REVERSE VOLTAGE

V

560 A

55 °C

1120 A

25 °C

6.0 µs

125

- 40 to 125

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

UNITS

A

kA2s

°C

I

MAXIMUM

RRM

AT T

= 125 °C

J

mA

75

Document Number: 93177 For technical questions, contact: [e-mail]
Revision: 14-May-08 1

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SD553C..S50L Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 560 A

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
at heatsink temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 7210 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward
slope resistance

High level value of forward
slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

f1

r

f2

FM

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 1120

t = 10 ms

t = 8.3 ms 12 570

t = 10 ms

t = 8.3 ms 10 570

t = 10 ms

t = 8.3 ms 658

t = 10 ms

t = 8.3 ms 466

(16.7 % x π x I
(I > π x I

(16.7 % x π x I

(I > π x I

No voltage
reapplied

50 % V

RRM

reapplied

No voltage

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

50 % V

RRM

reapplied

< I < π x I

F(AV)

), TJ = TJ maximum 1.95

F(AV)

< I < π x I

F(AV)

), TJ = TJ maximum 0.89

F(AV)

), TJ = TJ maximum 1.77

F(AV)

), TJ = TJ maximum 0.98

F(AV)

Ipk = 1500 A, TJ =125 °C, tp = 10 ms sinusoidal wave 3.24 V

560 (210) A

55 (85) °C

12 000

10 100

721

510

A

kA2s

V

mΩ

RECOVERY CHARACTERISTICS

CODE

MAXIMUM VALUE

AT T

= 25 °C

J

t

AT 25 % I

rr

RRM

(µs)

TEST CONDITIONS

I

pk

SQUARE

PULSE

(A/µs)

dI/dt

V

(V)

r

(A)

S50 5.0 1000 100 - 50 6.0 900 250

TYPICAL VALUES

t

AT 25 % I

rr

(µs)

AT TJ = 125 °C

Q

RRM

rr

(µC)

I

(A)

I

FM

rr

t

rr

dir

dt

I

RM(REC)

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

R

T

J

Stg

thJ-hs

DC operation single side cooled 0.073

DC operation double side cooled 0.031

Mounting force, ± 10 %

Approximate weight 255 g

Case style Conforms to JEDEC DO-200AB (B-PUK)

- 40 to 125

- 40 to 150

14 700
(1500)

°C

K/W

N

(kg)

t

Q

rr

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Document Number: 93177

2 Revision: 14-May-08

SD553C..S50L Series

Fast Recovery Diodes

(Hockey PUK Version), 560 A

ΔR

CONDUCTION ANGLE

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.009 0.009 0.006 0.006

120° 0.011 0.011 0.011 0.011

90° 0.014 0.014 0.015 0.015

60° 0.020 0.020 0.021 0.021

30° 0.036 0.036 0.036 0.036

130

120

110

100

90

80

70

60

50

40

30

0100200300400

Maxim um Allowable Heatsink Temperature (°C)

Average Forward Current (A)

SD 553C..S50L Se ries
(Single Side C ooled)
R (DC ) = 0.073 K/W

th J-hs

Cond uction Angl e

60°

30°

90°

120°

180°

Fig. 1 - Current Ratings Characteristics

Vishay High Power Products

TEST CONDITIONS UNITS

T

= TJ maximum K/W

J

when devices operate at different conduction angles than DC

thJ-hs

130

120

110

100

90

80

70

60

50

40

30

20

0 100 200 300 400 500 600 700 800

Maximum Allowable Heatsink Temperature ( °C)

Fig. 3 - Current Ratings Characteristics

SD553C..S50L Series
(D oub le Side Cooled )
R (DC ) = 0.031 K/W

thJ-hs

Conduction Angle

30°

60°

90°

120°

Average Forward C urrent (A)

180°

130

120

110

100

90

80

70

60

50

40

30

20

10

0 1 00 200 300 40 0 5 00 6 00

Maxim um Allowable Heatsink Temperature (°C)

SD 553C ..S50L Series
(Single S ide C ooled)
R ( D C) = 0.073 K/W

thJ-h s

Conduction Period

30°

60°

90°

120°

180° DC

Average Forward Current (A)

Fig. 2 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

10

0 200 400 6 00 80 0 100 0 120 0

Maximum Allowable Heatsink Tem perature (°C)

SD553C..S50 L Se ries
(Double S ide Cooled)
R (D C) = 0.031 K/ W

thJ-h s

Conduction Period

30°

60°

90°

120°

180°

Average Forward Curren t (A)

Fig. 4 - Current Ratings Characteristics

DC

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Revision: 14-May-08 3

SD553C..S50L Series

Vishay High Power Products

250 0

225 0

200 0

175 0

150 0

125 0

100 0

750

500

250

Maximum Average Forward Power Loss (W)

3500

3000

2500

2000

1500

1000

500

Maximum Average Forw ard Power Loss (W)

180°
120°

90°
60°
30°

SD553C..S50L Series
T = 125°C

J

0

0 100 200 300 400 500 600 700 800

Averag e Forward C urrent (A)

RMS Limit

Con duction An gle

Fig. 5 - Forward Power Loss Characteristics

DC
180°
120°

90°

60°

30°

RMS Limit

Conduction Period

SD553C ..S50L Series
T = 125°C

J

0

0 200 400 600 800 1000 1200

Ave rage Forward Curre nt (A )

Fig. 6 - Forward Power Loss Characteristics

Fast Recovery Diodes

(Hockey PUK Version), 560 A

14000

12000

10000

8000

6000

4000

Peak Half Sine Wave Forward Current (A)

2000

Fig. 8 - Maximum Non-Repetitive Surge Current

10000

1000

Instan taneous For ward C urrent (A)

100

Fig. 9 - Forward Voltage Drop Characteristics

Maximum Non Repetitive Surge Current

SD553C ..S50L Series

Ve rsus P ulse Train D uration .

50% Rated V Reapplied

Pulse Train Duration (s)

Initial T = 125°C

No Voltage Reapplied

RRM

J

11.010.0

Single and Double Side Cooled

T = 25°C

J

1.522.533.544.55

Instantaneous Forward Voltage (V)

T = 125°C

J

SD553C ..S50L Series

12000

At Any Rated Load Condition And With

50% Ra ted V Ap plied Fo llow ing Surge

11000

10000

9000

8000

7000

6000

5000

SD 553C..S50L Se ries

4000

Pe a k H a lf S in e W a ve F o rw a rd C u rr e n t (A)

3000

Num ber Of E qua l Amp litude Half Cycle C urrent Pulses (N)

RRM

In itia l T = 1 25 °C

J

@ 60 H z 0.0083 s
@ 50 H z 0.0100 s

Fig. 7 - Maximum Non-Repetitive Surge Current

001011

0.1

SD 553 C..S50 L S erie s

thJ-h s

0.01

0.001

Tra nsient Th erm al Im ped an ce Z (K /W )

0. 001 0.0 1 0 .1 1 1 0 10 0

Sq ua re W av e Pu lse Dura tion (s)

Fig. 10 - Thermal Impedance Z

Ste a dy State V alue

R = 0.073 K/W

thJ-hs

(Single S id e C ooled )

R = 0.031 K/W

thJ- hs

(Double Side Cooled)

(D C Op era tio n)

thJ-hs

Characteristic

Single and Double Side Cooled

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Document Number: 93177

4 Revision: 14-May-08

SD553C..S50L Series

(Hockey PUK Version), 560 A

400

V

350

300

250

200

150

Forward Recovery (V)

100

50

0

10.5

10

9.5

SD 553 C ..S50L Se ries
T = 1 25 °C; V > 100V

J

9

8.5
8

7.5

I = 15 00 A

FM

Sine Pulse

7

6.5
6

5.5

5

4.5

Maximum Reverse Recovery Time - Trr (µs)

4

10 100 1000

Rate Of Fall Of Forward Current - di/dt (A/µs)

FP

0 200 400 600 800 1000 1200 1400 1600 1800 2000

Fig. 11 - Typical Forward Recovery Characteristics

r

1000 A

500 A

Fast Recovery Diodes

I

SD55 3C..S 50L Series

Rate Of Rise Of Forw ard C urrent - di/dt (A/us)

Vishay High Power Products

T = 12 5°C

J

T = 25°C

J

800

700

600

500

400

300

200

100

0

M ax im um R ev erse Re c ov ery Cu rren t - Ir r (A)

0 5 0 100 1 50 2 00 2 50 300

Rate Of Fall Of Forwa rd Current - di/dt (A/µs)

I = 15 00 A

FM

Sine Pulse

1000 A

500 A

SD 5 5 3C ..S 5 0 L S er ie s
T = 1 2 5 °C ; V > 1 0 0V

J

r

Fig. 12 - Recovery Time Characteristics

2500

2000

1500

1000

500

0

0 50 100 150 200 250 300

Ma x im u m Re ve rse Re co ve ry C h arg e - Q rr (µC )

Rate Of Fall O f Forward Current - di/dt (A/µs)

I = 1 5 00 A

FM

Sin e Pu lse

1000 A

500 A

SD 553C ..S50L Series
T = 1 2 5 °C ; V > 1 0 0V

J r

Fig. 13 - Recovery Charge Characteristics

Fig. 14 - Recovery Current Characteristics

1E4

10 joules per pulse

6

4

2

1

0.8

1E3

Peak Forward Current (A)

1E2

1E1 1E2 1E3 1E4

0.6

0.4

0.2

SD553C..S50L Series
Sinu soid al Pulse
T = 1 25° C, V = 15 00V

J

dv/dt = 1000V/µs

tp

RRM

Pulse B asewidth (µs)

Fig. 15 - Maximum Total Energy Loss

Per Pulse Characteristics

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Revision: 14-May-08 5

SD553C..S50L Series

Vishay High Power Products

1E4

200

400

600

1000

1500

2000

1E3

Peak Forw ard C urrent (A)

1E2

1E1 1E2 1E3 1E4

1E4

1E3

Peak Forward C urrent (A)

1E2

1E1 1E2 1E3 1E4

3000

4000

6000

10000

SD 553 C..S50L Series

Sinu soid al Puls e

T = 55°C , V = 15 00V

C

dv/dt = 1000V/u s

tp

Pulse Basewidth (µs)

Fig. 16 - Frequency Characteristics

SD5 53C.. S5 0L Series
Sin uso ida l Pu lse
T = 125°C, V = 1500V

J

6

4

2

dv/dt = 1000V/µs

10 jo ules p er p ulse

8

tp

1

0.8

0.6

0.4

Pulse Basewidth (µs)

Fig. 17 - Maximum Total Energy Loss

Per Pulse Characteristics

Fast Recovery Diodes

(Hockey PUK Version), 560 A

1E4

100

50 H z

1E3

RRM

Peak Forward Current (A)

1E2

1E4

RRM

1E3

Peak Forward Current (A)

1E2

6000

tp

400 0

3000

2000

1500

100 0

600

400

50 H z

100

200

SD 55 3C.. S50 L Ser ies
Trap ezo idal Pulse
T = 5 5°C, V = 150 0V
dv/dt = 10 00V/us,
di/dt = 300A/us

RRM

C

1E1 1E 2 1E3 1E4

Pulse Basewidth (µs)

Fig. 18 - Frequency Characteristics

SD553C..S50L Series
Tra pezo idal Puls e
T = 125°C, V = 1500V

J

dv/d t = 100 0V/ µs
di/dt = 100A /µs

RRM

0.4

0.6

0.8

tp

10 jo u les p er puls e

8

6

4

2

1

1E1 1E2 1E3 1 E4

Pulse Basewidth (µs)

Fig. 19 - Maximum Total Energy Loss

Per Pulse Characteristics

1E4

tp

400

600

1000

3000

2000

150 0

SD553C..S50L Series
Tra pe zoida l Pu lse
T = 55°C, V = 15 00V

C

dv/dt = 1000V/us,
di/dt = 100A/us

1E3

Peak Forward Current (A)

1E2

4000

6000

1E1 1E2 1E3 1E4

200

100

50 H z

RRM

Pulse Basewidth (µs)

Fig. 20 - Frequency Characteristics

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Document Number: 93177

6 Revision: 14-May-08

SD553C..S50L Series

Fast Recovery Diodes

Vishay High Power Products

(Hockey PUK Version), 560 A

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95246

SD 55 3 C 45 S50 L

51324

1 - Diode

2 - Essential part number

3 - 3 = Fast recovery

4 - C = Ceramic PUK

5 - Voltage code x 100 = V

6 -t

7 - L = PUK case DO-200AB (B-PUK)

code

rr

LINKS TO RELATED DOCUMENTS

67

(see Voltage Ratings table)

RRM

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Revision: 14-May-08 7

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Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

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