Vishay SD263C..S50L Series Data Sheet

DO-200AB (B-PUK)

PRODUCT SUMMARY

I

F(AV)

SD263C..S50L Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 375 A

FEATURES

• High power FAST recovery diode series

• 4.5 µs recovery time

• High voltage ratings up to 4500 V

• High current capability

• Optimized turn-on and turn-off characteristics

• Low forward recovery

• Fast and soft reverse recovery

• Press PUK encapsulation

• Case style conform to JEDEC DO-200AB (B-PUK)

• Maximum junction temperature 125 °C

• Lead (Pb)-free

375 A

TYPICAL APPLICATIONS

• Snubber diode for GTO

• High voltage freewheeling diode

• Fast recovery rectifier applications

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

F(AV)

I

F(RMS)

I

FSM

V

RRM

t

rr

T

J

T

hs

50 Hz 5500

60 Hz 5760

Range 3000 to 4500 V

T

J

375 A

55 °C

408

4.5 µs

125

- 40 to 125

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

SD263C..S50L

, MAXIMUM REPETITIVE

VOLTAGE

CODE

30 3000 3100

36 3600 3700

40 4000 4100

45 4500 4600

RRM

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

AT T

A

°C

MAXIMUM

RRM

= TJ MAXIMUM

J

mA

50

Document Number: 93173 For technical questions, contact: [e-mail]
Revision: 14-May-08 1

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SD263C..S50L Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 375 A

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
at heatsink temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1510 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward
slope resistance

High level value of forward
slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

f1

r

f2

FM

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 725

t = 10 ms

t = 8.3 ms 5760

t = 10 ms

t = 8.3 ms 4850

t = 10 ms

t = 8.3 ms 138

t = 10 ms

t = 8.3 ms 98

(16.7 % x π x I
(I > π x I

(16.7 % x π x I

(I > π x I

No voltage
reapplied

50 % V

RRM

reapplied

No voltage

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

50 % V

RRM

reapplied

< I < π x I

F(AV)

), TJ = TJ maximum 1.71

F(AV)

< I < π x I

F(AV)

), TJ = TJ maximum 1.53

F(AV)

), TJ = TJ maximum 1.56

F(AV)

), TJ = TJ maximum 1.64

F(AV)

Ipk = 1000 A, TJ = TJ maximum,
t

= 10 ms sinusoidal wave

p

375 (150) A

55 (85) °C

5500

4630

151

107

3.20 V

A

kA2s

V

mΩ

RECOVERY CHARACTERISTICS

TYPICAL VALUES

AT TJ = 150 °C

AT 25 % I

(µs)

RRM

Q

(µC)

I

FM

rr

I

rr

(A)

t

rr

dir

dt

I

RM(REC)

CODE

MAXIMUM VALUE

= 25 °C

AT T

J

AT 25 % I

t

rr

RRM

(µs)

TEST CONDITIONS

I

pk

SQUARE

PULSE

dI/dt

(A/µs)

(1)

V

t

r

rr

(V)

(A)

S50 5.0 1000 100 - 50 4.5 680 240

Note

(1)

dI/dt = 25 A/µs, TJ = 25 °C

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

Mounting force, ± 10 % 9800 (1000) N (kg)

Approximate weight 230 g

Case style See dimensions - link at the end of datasheet DO-200AB (B-PUK)

R

T

J

Stg

thJ-hs

- 40 to 125

- 40 to 150

DC operation single side cooled 0.11

DC operation double side cooled 0.05

°C

K/W

t

Q

rr

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Document Number: 93173

2 Revision: 14-May-08

SD263C..S50L Series

Fast Recovery Diodes

(Hockey PUK Version), 375 A

ΔR

CONDUCTION ANGLE

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.012 0.011 0.008 0.008

120° 0.014 0.015 0.014 0.014

90° 0.018 0.018 0.019 0.019

60° 0.026 0.027 0.027 0.028

30° 0.045 0.046 0.046 0.046

130

120

110

100

90

80

70

60

50

40

30

20

10

050100150200250300

Maximum Allowable Heatsink Temperature (°C)

Average Forward Current (A)

SD263C..S50L Series
(Single Side Cooled)
R (DC) = 0.11 K/W

thJ-hs

Conduction Angle

90°

60°

30°

120°

180°

Fig. 1 - Current Ratings Characteristics

Vishay High Power Products

TEST CONDITIONS UNITS

= TJ maximum K/W

T

J

when devices operate at different conduction angles than DC

thJ-hs

130

120

110

100

90

80

70

60

50

40

30

20

10

0 100 200 300 400 500

Maxim um Allowable Heatsink Temperature (°C)

A ver a g e Fo rw a rd C u rre nt (A )

Fig. 3 - Current Ratings Characteristics

SD 2 63C ..S50 L S e ries
(D o uble Side C oo le d )
R (D C ) = 0 .0 5 K /W

th J-hs

Conduction Angle

30°

60°

90°

120°

180°

130

120

110

100

90

80

70

60

50

40

30

20

10

0 50 100 150 200 250 300 350 400 450

Maxim um Allowable Heatsink Tem perature (°C )

SD263C ..S50L Series
(Single Side Cooled)
R ( D C ) = 0 .1 1 K / W

th J-hs

Conduction Period

30°

60°

90°

120°

180°

Average Forw ard Current (A)

Fig. 2 - Current Ratings Characteristics

DC

130

120

110

100

90

80

70

60

50

40

30

20

10

Maximum Allowable Heatsink Temperature (°C)

30°

0200400600800

Average Forward Current (A)

SD263C..S50L Series
(Double Side Cooled)
R (D C) = 0.05 K/W

thJ-h s

Conduction Period

60°

90°

120°

180°

DC

Fig. 4 - Current Ratings Characteristics

Document Number: 93173 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 14-May-08 3