Vishay SD253N SERIES, SD253R SERIES Data Sheet
Bulletin I2065 rev. A 09/94
SD253N/R SERIES
FAST RECOVERY DIODES Stud Version
Features
High power FAST recovery diode series
1.5 to 2.0 µs recovery time
High voltage ratings up to 1600V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version JEDEC DO-205AB (DO-9)
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
250A
Major Ratings and Characteristics
Parameters SD253N/R Units
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
I2t@
V
RRM
trrrange 1.5 to 2.0 µs
T
J
@ 50Hz 5350 A
@ 60Hz 5600 A
50Hz 143 KA2s
@ 60Hz 130 KA
range 400 to 1600 V
@ T
J
www.irf.com
250 A
85 °C
392 A
25 °C
- 40 to 125 °C
2
s
case style
DO-205AB (DO-9)
1
SD253N/R Series
Bulletin I2065 rev. A 09/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
Type number Code peak and off-state voltage repetitive peak voltage T
04 400 500
SD253N/R..S15 08 800 900
10 1000 1100
12 1200 1300
SD253N/R..S20 14 1400 1500
16 1600 1700
Forward Conduction
Parameter SD253N/R Units Conditions
I
Max. average forward current 250 A 180° conduction, half sine wave.
F(AV)
@ Case temperature 85 °C
I
Max. RMS current 392 A DC @ 74°C case temperature
F(RMS)
Max. peak, one-cycle 5350 t = 10ms No voltage
I
FSM
non-repetitive forward current 5600 t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 143 t = 10ms No voltage Initial TJ = TJ max.
2
I
√t Maximum I2√t for fusing 1430 KA2√s t = 0.1 to 10ms, no voltage reapplied
Low level of threshold voltage 0.87 (16.7% x π x I
V
F(TO)1
High level of threshold voltage 1.17 (I > π x I
V
F(TO)2
r
Low level of forward slope resistance 0.62 (16.7% x π x I
f1
High level of forward slope resistance 0.29 (I > π x I
r
f2
V
Max. forward voltage 1.38 V Ipk= 785A, TJ = 25°C, tp = 400 µs square pulse
FM
max. repetitive V
RRM
, maximum non- I
RSM
VVmA
4500 t = 10ms 100% V
4710 t = 8.3ms reapplied Sinusoidal half wave,
130 t = 8.3ms reapplied
101 t = 10ms 100% V
92 t = 8.3ms reapplied
A
KA2s
V
mΩ
F(AV)
), TJ = TJ max.
F(AV)
F(AV)
), TJ = TJ max.
F(AV)
RRM
RRM
< I < π x I
< I < π x I
), TJ = TJ max.
F(AV)
), TJ = TJ max.
F(AV)
max.
RRM
= 125°C
J
35
Recovery Characteristics
Code
T
= 25 oC
J
typical t
@ 25% I
rr
RRM
Test conditions Max. values @ T
I
pk
Square Pulse @ 25% I
di/dt V
r
t
rr
RRM
(µs) (A) (A/µs) (V) (µs) (µC) (A)
S15 1.5 2.9 90 44
S20 2.0 3.2 107 46
750 25 - 30
= 125 °C
J
QrrI
rr
2 www.irf.com
SD253N/R Series
Bulletin I2065 rev. A 09/94
Thermal and Mechanical Specification
Parameter SD253N/R Units Conditions
T
Max. operating temperature range -40 to 125
J
Max. storage temperature range -40 to 150
T
stg
Max. thermal resistance, junction to case 0.115 DC operation
R
thJC
Max. thermal resistance, case to heatsink 0.08 Mounting surface, smooth, flat and greased
R
thCS
T Mounting torque ± 10% 31 Not lubricated threads
24.5 Lubricated threads
wt Approximate weight 250 g
Case style DO-205AB (DO-9) See Outline Table
∆R
Conduction
thJC
(The following table shows the increment of thermal resistence R
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.010 0.008 TJ = TJ max.
120° 0.013 0.014
90° 0.017 0.019 K/ W
60° 0.025 0.027
30° 0.044 0.044
°C
K/W
Nm
when devices operate at different conduction angles than DC)
thJC
Ordering Information Table
1 - Diode
2 - Essential part number
3 - 3 = Fast recovery
4 - N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5 - Voltage code: Code x 100 = V
6 -trr code (see Recovery Characteristics table)
7 - P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A
M = Stud base DO-205AB (DO-9) M16 X 1.5
8 -7 B = Flag top terminals (for Cathode/ Anode Leads)
S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
None = Not isolated lead
9 - V = Glass-metal seal
Device Code
SD 25 3 R 16 S20 P B V
2 3 4
(see Voltage Ratings table)
RRM
51
7689
3www.irf.com
Loading...