Vishay SD1553CK User Manual

DO-200AC (K-PUK)

PRODUCT SUMMARY

I

F(AV)

SD1553C..K Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 1650/1825 A

FEATURES

• High power FAST recovery diode series

• 2.0 to 3.0 µs recovery time

• High voltage ratings up to 3000 V

• High current capability

• Optimized turn-on and turn-off characteristics

• Low forward recovery

• Fast and soft reverse recovery

• Press PUK encapsulation

• Case style conform to JEDEC DO-200AC (K-PUK)

• Maximum junction temperature 150 °C

• Lead (Pb)-free

1650/1825 A

TYPICAL APPLICATIONS

• Snubber diode for GTO

• High voltage freewheeling diode

• Fast recovery rectifier applications

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS

I

F(AV)

I

F(RMS)

I

FSM

V

RRM

t

rr

T

J

T

hs

50 Hz 25 000 22 000

60 Hz 26 180 23 000

Range 1800 to 2500 1800 to 3000 V

T

J

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM REPETITIVE

TYPE NUMBER

SD1553C..S20K

SD1553C..S30K

VOLTAGE

CODE

18 1800 1900

22 2200 2300

25 2500 2600

18 1800 1900

22 2200 2300

25 2500 2600

28 2800 2900

30 3000 3100

RRM

PEAK REVERSE VOLTAGE

V

SD1553C..K

S20 S30

1825 1650 A

55 55 °C

3100 2800

2.0 3.0 µs

25

- 40 to 150

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

UNITS

I

MAXIMUM

RRM

= TJ MAXIMUM

AT T

J

A

°C

mA

75

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Revision: 14-May-08 1

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SD1553C..K Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version),

1650/1825 A

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS

Maximum average forward current
at heatsink temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 31 260 24 210 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward
slope resistance

High level value of forward
slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

r

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 3100 2800

t = 10 ms

t = 8.3 ms 26 180 23 000

t = 10 ms

t = 8.3 ms 22 010 19 370

t = 10 ms

t = 8.3 ms 2854 2210

t = 10 ms

t = 8.3 ms 2018 1563

(16.7 % x π x I
(I > π x I

(16.7 % x π x I

f1

(I > π x I

f2

Ipk = 4000 A, TJ = TJ maximum,

FM

= 10 ms sinusoidal wave

t

p

No voltage
reapplied

100 % V

RRM

reapplied

No voltage

Sinusoidal half wave,
initial T

reapplied

100 % V

RRM

reapplied

< I < π x I

F(AV)

), TJ = TJ maximum 1.29 1.45

F(AV)

< I < π x I

F(AV)

), TJ = TJ maximum 0.25 0.30

F(AV)

F(AV)

F(AV)

SD1553C..K

S20 S30

1825 (865) 1650 (790) A

55 (85) 55 (85) °C

25 000 22 000

21 030 18 500

= TJ maximum

J

3126 2421

2210 1712

), TJ = TJ maximum 1.15 1.31

), TJ = TJ maximum 0.27 0.32

2.23 2.60 V

UNITS

A

2

kA

V

mΩ

s

RECOVERY CHARACTERISTICS

CODE

MAXIMUM VALUE

AT T

= 25 °C

J

t

AT 25 % I

rr

RRM

(µs)

TEST CONDITIONS

I

pk

SQUARE

PULSE

(A/µs)

dI/dt

V

(V)

t

r

rr

(A)

S20 2.0

S30 3.0 5.0 780 260

1000 100 - 50

TYPICAL VALUES

AT TJ = 150 °C

AT 25 % I

(µs)

RRM

Q

(µC)

rr

4.5 650 240

I

(A)

I

rr

FM

t

rr

I

RM(REC)

t

Q

rr

dir

dt

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
and storage temperature range

Maximum thermal resistance,
case junction to heatsink

Mounting force, ± 10 %

Approximate weight 425 g

Case style See dimensions - link at the end of datasheet DO-200AC (K-PUK)

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T

R

, T

J

thJ-hs

Stg

DC operation single side cooled 0.04

DC operation double side cooled 0.02

- 40 to 150 °C

K/W

22 250
(2250)

N

(kg)

Document Number: 93169

SD1553C..K Series

Fast Recovery Diodes

(Hockey PUK Version),

1650/1825 A

ΔR

CONDUCTION ANGLE

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.0018 0.0019 0.0012 0.0012

120° 0.0021 0.0021 0.0021 0.0021

90° 0.0027 0.0027 0.0029 0.0029

60° 0.0039 0.0039 0.0041 0.0041

30° 0.0067 0.0067 0.0068 0.0068

160

140

120

100

SD 1 553 C ..S20 K S eries
(Single Side Cooled)
R (D C ) = 0.04 K /W

th J-hs

Conduction Angle

Vishay High Power Products

TEST CONDITIONS UNITS

T

= TJ maximum K/W

J

when devices operate at different conduction angles than DC

thJ-hs

160

140

120

100

SD1553C..S30K Series
(Single Side C ooled)
R ( D C) = 0. 04 K/W

thJ-h s

Conduction Angle

80

60

40

0 200 400 600 800 1000 1200

Maxim um Allowable Heatsink Temperature (°C)

A vera g e F orw a rd Curre n t (A)

30°

60°

Fig. 1 - Current Ratings Characteristics

160

140

120

100

80

60

40

20

0

0 400 800 1200 1600 2000

Maximum Allow able Heatsink T emperature (°C)

SD1553C..S20K Series
(Single Side Cooled)
R (DC) = 0.04 K/W

th J-hs

Conduction Period

30°

60°

90°

120°

180° DC

Aver a ge For w ard Curr en t (A )

Fig. 2 - Current Ratings Characteristics

90°

120°

180°

80

60

40

0 200 400 600 80 0 100 0 120 0

Maximum Allowable Heatsink Temperature (°C)

Average Forward Current (A)

30°

60°

90°

Fig. 3 - Current Ratings Characteristics

160

140

120

100

80

60

40

20

0 400 800 1200 1600 2000

Maximum Allowable Heatsink Temperature ( °C)

SD1553C..S30K S eries
(Single Side C ooled)
R (DC) = 0.04 K/W

th J-hs

Conduction Period

30°

60°

90°

120°

180°

Average Forward Current (A)

Fig. 4 - Current Ratings Characteristics

180°

120°

DC

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SD1553C..K Series

Vishay High Power Products

160

140

120

100

80

60

40

20

0 500 1000 1500 2000 2500

Maxim um A llowable Heatsink Tem perature ( °C)

Fig. 5 - Current Ratings Characteristics

160

140

120

100

80

60

40

20

0 500 1000 1500 2000 2500 3000 3500

Maximum Allowable Heatsink Temperature (°C)

Fig. 6 - Current Ratings Characteristics

SD 15 53C ..S20K Serie s
(D o uble S ide C o oled)
R (DC ) = 0.02 K /W

th J-hs

Conduction Angle

90°

60°

30°

Average Forward C urrent (A)

SD1553C..S20K Series
(Double Side Co oled)
R (DC ) = 0. 02 K / W

th J-hs

90°

60°

30°

Average Forward Current (A)

120°

Conduction Period

120°

180°

180°

DC

Fast Recovery Diodes

(Hockey PUK Version),

1650/1825 A

Maximum Allowable H eatsink Temperature (°C)

Maximum A verage Forward Power Loss (W)

160

140

120

100

80

60

40

20

0 500 1000 1500 2000 2500 3000

SD 155 3C ..S3 0K Se r ies
(Double S ide Co oled)
R (DC ) = 0. 02 K / W

th J-hs

Con du ction Pe riod

90°

60°

30°

Average Forward Current (A)

120°

180°

DC

Fig. 8 - Current Ratings Characteristics

5000

4500

4000

3500

3000

2500

2000

1500

1000

500

180°
120°

90°
60°
30°

SD 15 53 C ..S20 K Ser ie s
T = 1 5 0°C

J

0

0 500 1000 1500 2000

Average Forward Current (A)

RMS Limit

Conduction Angle

Fig. 9 - Forward Power Loss Characteristics

160

140

120

100

80

60

40

0 400 800 1200 1600 2000

Maximum Allowable Heatsink Tem perature (°C)

SD1553C..S30K Series
(Double Side Cooled)
R (DC ) = 0.0 2 K/W

th J-hs

Conduction Angle

30°

60°

90°

Averag e Fo rwa rd C urre nt (A)

Fig. 7 - Current Ratings Characteristics

120°

180°

7000

6000

5000

4000

3000

2000

1000

Maximum Average Forward Power Loss (W)

DC
180°
120°

90°

60°

30°

RMS Limit

Conduction Period

SD1553C..S20K Series
T = 150°C

J

0

0 500 1000 1500 2000 2500 3000 3500

Averag e F orwa rd Current (A)

Fig. 10 - Forward Power Loss Characteristics

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Document Number: 93169

4 Revision: 14-May-08

SD1553C..K Series

5000

180°
120°

90°
60°
30°

SD1553C..S30K Series
T = 150°C

J

0 500 1000 1500 2000

Average Forward Current (A)

RM S Lim it

Cond uc tion Angle

M aximum Average Forward Power Loss (W)

4000

3000

2000

1000

0

Fig. 11 - Forward Power Loss Characteristics

7000

6000

5000

4000

3000

2000

1000

Maximum Average Forward Power Loss ( W)

DC
180°
120°

90°
60°
30°

RMS Limit

Conduction Period

SD1553C..S30K Series
T = 150°C

J

0

0 500 1000 1500 2000 2500 3000

Ave rage Fo rward Current (A )

Fig. 12 - Forward Power Loss Characteristics

Fast Recovery Diodes

(Hockey PUK Version),

1650/1825 A

Vishay High Power Products

25000

Max imum N on Repetitive Surge Current

22500

20000

17500

15000

12500

10000

7500

SD1553C..S20K Series

Peak Half Sine Wave Forward Current (A)

5000

0.01 0.1 1

Fig. 14 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

20000

At An y Ra te d Lo a d C o nd ition A n d W ith

18000

16000

14000

12000

10000

8000

Peak Half Sine W ave Forward Current (A)

6000

Nu mb e r O f Eq ua l A m pl itu d e H a lf C yc le C u rre n t P u l s es (N )

Ra te d V Ap p lie d Fo llow ing Su rg e.

SD15 53C ..S3 0K S eries

Fig. 15 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Versus Pulse Train Duration.

Pulse T rain Duration (s)

RRM

In it ial T = 15 0 ° C

No Voltage Reapplied
Rated V Reapplied

RRM

Initia l T = 150°C
@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

J

J

001011

25000

At Any Rated Load Condition And W ith

R a te d V A p p lie d F o llo w in g S u rg e .

22500

20000

17500

15000

12500

10000

SD 1 553 C..S20 K S eries

7500

Peak Half Sine W ave Forward C urrent (A)

5000

Number Of Equal Amplitude Half Cycle Current Pulses (N)

RRM

Init ia l T = 150 °C

J

@ 60 H z 0.0083 s
@ 50 H z 0.0100 s

Fig. 13 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

001011

24000

M a xim u m N on Re p etitive S urg e C urre nt

22000

20000

18000

16000

14000

12000

10000

8000

SD 1 553 C ..S 30K S e rie s

6000

Peak Half Sine W ave Forw ard C urren t (A)

4000

0.01 0.1 1

V e rs u s P u ls e Tr a in D u ra t io n .

Pulse Train Duration (s)

Initia l T = 150 °C

N o Vo lta g e R e a p p lie d
Ra ted V Re a p p lie d

RRM

J

Fig. 16 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

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SD1553C..K Series

Vishay High Power Products

10000

T = 25°C

100 0

Instantane ous Forwa rd Current (A )

100

0.511.522.533.54

Instantaneous Forward Voltage (V)

Fig. 17 - Forward Voltage Drop Characteristics Fig. 18 - Forward Voltage Drop Characteristics

J

T = 150°C

J

SD1553C..S20K Series

0.1

Stead y St a te V a lue

R = 0.04 K /W

th J -h s

(Single Side Coo led )

thJ-h s

R = 0.02 K /W

0.01

thJ-hs

(Dou ble Side Co ole d )

(D C O p e ration)

Fast Recovery Diodes

(Hockey PUK Version),

1650/1825 A

Instantaneous Forw ard Current (A)

10000

T = 25°C

J

T = 150°C

J

1000

SD1553C..S30K Series

100

1 1.5 2 2.5 3 3 .5 4 4 .5

Instantaneous Forward V oltage (V)

0.001

SD 1553C ..S20/S30K Series

0.000 1

Transien t Therm al Impedance Z (K/W)

0.001 0.01 0 .1 1 10 100

Squa re W ave Pulse D uration (s)

80

V

F P

60

40

Fo rw a rd R e c ove ry (V )

20

0

0 400 800 1200 1600 2000

Rate Of Rise Of Forw ard Current - di/dt (A/us)

I

T = 150°C

J

T = 25°C

J

SD15 53C ..S20K Serie s

Fig. 19 - Thermal Impedance Z

Characteristic

thJ-hs

Fo rw a rd R ec ov ery (V )

100

V

F P

80

60

40

20

0

0 400 800 120016002000

Ra te Of Rise O f Forwa rd Cu rrent - d i/dt ( A/u s)

I

T = 150°C

J

T = 25°C

J

SD1553C..S30K Series

Fig. 20 - Typical Forward Recovery Characteristics Fig. 21 - Typical Forward Recovery Characteristics

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Document Number: 93169

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SD1553C..K Series

Fast Recovery Diodes

(Hockey PUK Version),

7.5

7

6.5

6

5.5

5

4.5

4

3.5

3

Maxim um Reverse Recovery Tim e - Trr (µs)

2.5

Rate Of Fall Of Forward Current - di/dt (A/µs)

Fig. 22 - Recovery Time Characteristics

1400

1200

1000

800

600

400

200

Maximum Reverse Recovery Charge - Qrr (µC)

Rate Of Fall Of Forward Current - di/dt (A/µs)

SD1 553C ..S20K Series
T = 1 50 °C ; V > 100V

rJ

I = 1500 A

FM

Sine Pulse

1000 A

500 A

10 100 1000

I = 15 0 0 A

FM

Sin e Puls e

1000 A

500 A

SD 155 3C..S20K Series
T = 150 °C; V > 100V

J r

0

050100150200250300

1650/1825 A

Vishay High Power Products

8.5

8

7.5

7

6.5

6

5.5

5

4.5

4

Maxim um Reverse Re covery Tim e - Trr (µs)

3.5

Rate Of Fall O f Forward Current - di/dt (A/µs)

Fig. 25 - Recovery Time Characteristics

1600

1400

1200

1000

800

600

400

200

Maximum Reverse Recovery Charge - Qrr (µC)

Rate Of Fall Of Forward Current - di/dt (A/µs)

SD 1553C ..S 30K S eries
T = 150 °C; V > 100V

rJ

I = 150 0 A

FM

Sin e Pulse

1000 A

500 A

10 100 1000

I = 1 50 0 A

FM

Sine Pu lse

1000 A

500 A

SD 1553C ..S3 0K S eries
T = 1 5 0 ° C ; V > 1 0 0V

J r

0

050100150200250300

Fig. 23 - Recovery Charge Characteristics

700

600

I = 1500 A

FM

Sine Pulse

500

400

1000 A

500 A

300

200

SD155 3C ..S20K Serie s

100

0

Maxim um Reverse Recovery Current - Irr (A)

Rate Of Fall Of Forward Current - di/dt (A/µs)

T = 1 50 °C; V > 100V

J

r

0 50 100 150 200 250 300

Fig. 24 - Recovery Current Characteristics

Fig. 26 - Recovery Charge Characteristics

700

600

500

400

300

200

100

0

M axim u m R ev e rse R e c ove ry C urre n t - Irr (A )

0 5 0 10 0 15 0 200 250 300

Ra te Of Fa ll O f Fo rw a rd C u rre n t - di/d t (A/ µs )

I = 1 50 0 A

FM

Sin e Pu lse

1000 A

500 A

SD 15 53 C ..S30K Se ries
T = 150 °C; V > 100V

J

r

Fig. 27 - Recovery Current Characteristics

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Revision: 14-May-08 7

SD1553C..K Series

Vishay High Power Products

1E4

10 jo u le s p e r p ulse

6

4

2

1

0.6

0.4

1E3

Peak Forward Current (A)

1E2

1E1 1E2 1E3 1 E4

Fig. 28 - Maximum Total Energy Loss

1E4

1E3

20000

Peak Forward Current (A)

1E2

1E1 1 E2 1E 3 1 E4

0.2

0.1

SD1 553 C..S20 K Seri es
Sinu soida l Pulse
T = 150°C, V = 800V

tp

dv/dt = 1000V/µs

RRM

J

Pulse Basew idth (µs)

Per Pulse Characteristics

400

400 0

100 0200 0

SD1553C..S20 K Seri es
Sinuso ida l Pulse
T = 55°C , V = 8 00 V

C

dv/dt = 1000V/us

tp

3000

6000

10000

150 00

Pulse Base w idth (µs)

200

RRM

Fast Recovery Diodes

(Hockey PUK Version),

1650/1825 A

50 Hz

100

1E4

100

200

400

600

1000

2000

3000

4000

1E3

Peak Forward Current (A)

1E2

1E1 1 E2 1 E3 1 E4

6000

10000

15000

20000 tp

SD1553C..S20K Series
Tra pe zoid al P u ls e
T = 5 5°C, V = 800V
dv/dt = 1000V/us,
di/dt = 300A/us

RRM

C

Pulse Basewidth (µs)

Fig. 31 - Frequency Characteristics

1E4

10 j o ules p er p ul se

6

4

2

1

1E3

Peak Forward Current (A)

1E2

1E1 1 E2 1E3 1 E4

SD1 553 C ..S20K S eries
Tra pe zoid al P u lse
T = 15 0°C, V = 80 0V

J

dv/dt = 1000V/µs

tp

di/dt = 100A/µs

0.8

0.6

0.4

RRM

Pulse Basewidth (µs)

50 H z

Fig. 29 - Frequency Characteristics

Fig. 32 - Maximum Total Energy Loss

Per Pulse Characteristics

1E4

10 j o ules p er p ul se

6

4

2

1E3

0.4

Peak F orw ard Current (A )

1E2

1E1 1 E2 1 E3 1 E4

SD1 553 C ..S20K S eries
Trap ezoi da l P uls e
T = 150°C, V = 800V

dv/dt = 1000V/µs

tp

di/dt = 300A/µs

1

0.8

0.6

RRM

J

Pulse Basewidth (µs)

Fig. 30 - Maximum Total Energy Loss

1E4

100

200

400

1000

2000

6000

15000

20000

10000

SD1 553C ..S20 K Seri es
Tra p ezo idal Pu lse
T = 55°C , V = 800 V

C

dv/dt = 1000V/us,

tp

di/dt = 100A/us

RRM

1E3

Peak Forward Current (A)

1E2

1E1 1 E2 1 E 3 1 E4

Pulse B ase width (µs)

Fig. 33 - Frequency Characteristics

50 H z

Per Pulse Characteristics

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Document Number: 93169

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SD1553C..K Series

1E4

10 joules per pulse

6

4

2

1

0.6

0.4

1E3

Peak Forward Current (A)

1E2

1E1 1E2 1 E3 1 E4

0.2

SD1553C..S30K Series
Sinuso ida l Pul se
T = 150°C, V = 1000V

J

d v/d t = 1 00 0V /µs

tp

RRM

Pulse Basew idth (µs)

Fig. 34 - Maximum Total Energy Loss

Per Pulse Characteristics

1E4

1000

2000

3000

4000

6000

10000

Peak Forward Curren t (A)

1E3

1E1 1 E2 1E3 1 E4

400

SD1553C..S30 K Ser ies
Sin usoid al Pu lse

T = 55°C , V = 1000V

C

dv/dt = 1000V/us

tp

P ulse Base w idt h (µs)

100

RRM

Fast Recovery Diodes

(Hockey PUK Version),

1650/1825 A

1E4

1E3

Peak Forward Current (A)

1E2

1E4

50 Hz200

1E3

Peak Forward Curre nt (A )

1E2

Vishay High Power Products

50 H z

100

200

400

1000

2000

4000

6000

10000

15000

20000

1E1 1E2 1E3 1E4

Pulse Basew idth (µs)

Fig. 37 - Frequency Characteristics

0.8

0.6

SD1 553 C..S30 K Series
Trapezoidal Pulse
T = 150°C, V = 1000V

J

dv/dt = 1000V/µs

tp

di/dt = 100A/µs

1E1 1 E2 1 E3 1 E4

Pulse Basewidth (µs)

SD1553C..S30 K Series
Trapezoidal Pulse
T = 55°C, V = 1000V

C

dv/dt = 1000V/us,

tp

di/dt = 300A/us

6

4

2

1

RRM

RRM

10 joules per pulse

Fig. 35 - Frequency Characteristics

Fig. 38 - Maximum Total Energy Loss

Per Pulse Characteristics

1E4

1 0 j o u les p e r pu ls e

6

4

2

1E3

1

0.8

0.6

Peak Forward Curre nt (A )

1E2

1E1 1E2 1E3 1E4

SD1 553 C ..S30 K Series

Tra pe zoida l Pu lse
T = 150°C, V = 1000V

J

dv/dt = 1000V/µs

tp

d i/dt = 300A /µ s

RRM

Pulse B ase width (µs)

Fig. 36 - Maximum Total Energy Loss

1E4

400

200

600

1000

2000

4000

SD1553C..S30K Series

Peak Forward Current (A)

1E3

1E1 1E2 1E3 1E4

Trap ezoidal Pulse
T = 55°C, V = 1000V

C

dv/dt = 1000V/us,

tp

di/dt = 100A/us

RRM

100

Pulse Basew idth (µs)

Fig. 39 - Frequency Characteristics

50 Hz

Per Pulse Characteristics

Document Number: 93169 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 14-May-08 9

SD1553C..K Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version),

1650/1825 A

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95247

SD 155 3 C 30 S30 K

51324

67

1

- Diode

2

- Essential part number

3

- 3 = Fast recovery

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

-trr code

7

- K = PUK case DO-200AC (K-PUK)

LINKS TO RELATED DOCUMENTS

(see Voltage Ratings table)

RRM

www.vishay.com For technical questions, contact: [e-mail]
10 Revision: 14-May-08

Document Number: 93169

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1