Vishay SD1100C..L Series Data Sheet

Vishay High Power Products

Standard Recovery Diodes

(Hockey PUK Version), 1170 A

FEATURES

• Wide current range

SD1100C..L Series

DO-200AB (B-PUK)

PRODUCT SUMMARY

I

F(AV)

1170 A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS

I

F(AV)

I

F(RMS)

I

FSM

2

I

t

V

RRM

T

J

T

hs

T

hs

50 Hz 13 000 10 500

60 Hz 13 600 11 000

50 Hz 846 551

60 Hz 772 503

Range 400 to 2000 2500 to 3200 V

• High voltage ratings up to 3200 V

• High surge current capabilities

• Diffused junction

• Hockey PUK version

• Case style DO-200AB (B-PUK)

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• Converters

• Power supplies

• Machine tool controls

• High power drives

• Medium traction applications

SD1100C..L

04 to 20 25 to 32

1170 910 A

55 55 °C

2080 1660 A

25 25 °C

- 40 to 180 - 40 to 150 °C

UNITS

kA2s

RoHS

COMPLIANT

A

SD1100C..L Series

Vishay High Power Products

Standard Recovery Diodes

(Hockey PUK Version),

1170 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM REPETITIVE

TYPE NUMBER

VOLTAGE

CODE

RRM

PEAK REVERSE VOLTAGE

V

04 400 500

08 800 900

12 1200 1300

SD1100C..L

16 1600 1700

20 2000 2100

25 2500 2600

30 3000 3100

32 3200 3300

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS

Maximum average forward current
at heatsink temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 8460 5510 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward
slope resistance

High level value of forward
slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

r

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 2080 1660

t = 10 ms

t = 8.3 ms 13 600 11 000

t = 10 ms

t = 8.3 ms 11 450 9250

t = 10 ms

t = 8.3 ms 772 503

t = 10 ms

t = 8.3 ms 546 356

(16.7 % x π x I
(I > π x I

(16.7 % x π x I

f1

(I > π x I

f2

Ipk = 1500 A, TJ = TJ maximum,

FM

t

= 10 ms sinusoidal wave

p

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

F(AV)

), TJ = TJ maximum 0.94 0.88

F(AV)

F(AV)

), TJ = TJ maximum 0.26 0.38

F(AV)

V

RRM

RRM

< I < π x I

< I < π x I

RSM

PEAK REVERSE VOLTAGE

F(AV)

F(AV)

, MAXIMUM NON-REPETITIVE

AT T

V

SD1100C..L

04 to 20 25 to 32

1170 (600) 910 (420) A

55 (85) 55 (85) °C

13 000 10 500

10 930 8830

Sinusoidal half wave,
initial T

= TJ maximum

J

846 551

598 390

), TJ = TJ maximum 0.78 0.84

), TJ = TJ maximum 0.35 0.40

1.31 1.44 V

I

MAXIMUM

RRM

= TJ MAXIMUM

J

mA

15

UNITS

A

kA2s

V

mΩ

SD1100C..L Series

Standard Recovery Diodes

Vishay High Power Products

(Hockey PUK Version), 1170 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Maximum junction operating
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

Mounting force, ± 10 %

Approximate weight 250 g

Case style See dimensions - link at the end of datasheet DO-200AB (B-PUK)

ΔR

CONDUCTION ANGLE

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.011 0.011 0.008 0.008

120° 0.014 0.015 0.014 0.014

90° 0.018 0.018 0.019 0.019

60° 0.026 0.026 0.027 0.028

30° 0.045 0.046 0.046 0.046

R

T

J

Stg

thJ-hs

DC operation single side cooled 0.11

DC operation double side cooled 0.05

when devices operate at different conduction angles than DC

thJ-hs

SD1100C..L

04 to 20 25 to 32

- 40 to 180 - 40 to 150

- 55 to 200

9800

(1000)

TEST CONDITIONS UNITS

= TJ maximum K/W

T

J

UNITS

°C

K/W

N

(kg)