Maximum average forward current
at heatsink temperature
Maximum RMS forward currentI
Maximum peak, one-cycle forward,
non-repetitive current
2
Maximum I
Maximum I
t for fusingI2t
2
√t for fusingI2√tt = 0.1 to 10 ms, no voltage reapplied84605510 kA2√s
Low level value of threshold voltageV
High level value of threshold voltageV
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage dropV
I
F(AV)
F(RMS)
I
FSM
F(TO)1
F(TO)2
r
r
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled25002000
t = 10 ms
t = 8.3 ms13 60011 000
t = 10 ms
t = 8.3 ms11 4509250
t = 10 ms
t = 8.3 ms772503
t = 10 ms
t = 8.3 ms546356
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
f1
(I > π x I
f2
Ipk = 1500 A, TJ = TJ maximum
FM
= 10 ms sinusoidal wave
t
p
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
Sinusoidal half wave,
initial T
reapplied
100 % V
RRM
reapplied
< I < π x I
F(AV)
), TJ = TJ maximum0.940.88
F(AV)
< I < π x I
F(AV)
), TJ = TJ maximum0.260.38
F(AV)
F(AV)
F(AV)
SD1100C..C
04 TO 2025 TO 32
1400 (795) 1100 (550)A
55 (85)55 (85)°C
13 00010 500
10 9308830
= TJ maximum
J
846551
598390
), TJ = TJ maximum0.780.84
), TJ = TJ maximum0.350.40
1.311.44V
UNITS
A
kA2s
V
mΩ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOLTEST CONDITIONS
Maximum junction operating
temperature range
Maximum storage temperature rangeT
Maximum thermal resistance,
junction to heatsink
R
T
J
Stg
thJ-hs
DC operation single side cooled0.076
DC operation double side cooled0.038
Mounting force, ± 10 %9800 (1000)N (kg)
Approximate weight83g
Case styleSee dimensions - link at the end of datasheetB-43
ΔR
CONDUCTION ANGLE
CONDUCTION
thJ-hs
SINUSOIDAL CONDUCTIONRECTANGULAR CONDUCTION
SINGLE SIDEDOUBLE SIDESINGLE SIDEDOUBLE SIDE
180°0.0070.0070.0050.005
120°0.0080.0080.0080.008
90°0.0100.0100.0110.011
60°0.0150.0150.0160.016
30°0.0260.0260.0260.026
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJ-hs
SD1100C..C
04 TO 2025 TO 32
- 40 to 180 - 40 to 150
- 55 to 200
TEST CONDITIONS UNITS
T
= TJ maximumK/W
J
UNITS
°C
K/W
SD1100C..C Series
Standard Recovery Diodes
180
160
140
120
100
80
60
40
Maximum Allowable Heatsink Temperature (°C)
180
160
140
120
100
80
60
40
20
Maximum Allowable Heatsink Tem perature (°C)
SD1100C..C Series (400V to 2000V)
020040060080 01000
Average Forward Current (A)
(Single Side Cooled)
R (D C ) = 0.0 76 K / W
th J-hs
Conduction Angle
30°
60°
90°
120°
180°
Fig. 1 - Current Ratings Characteristics
SD 1100 C..C Series (400V to 2000 V )
30°
040080012001600
Average Forward Current (A)
( S in g le Sid e C oo le d )
R ( D C ) = 0 .0 76 K /W
thJ-h s
Cond uc tion Pe riod
90°
60°
120°
180°
DC
Fig. 2 - Current Ratings Characteristics
(Hockey PUK Version),
1400 A
Vishay High Power Products
180
160
140
120
100
80
60
40
20
Maximum Allowable Heatsink Tem perature (°C)
150
140
130
120
110
100
90
80
70
60
50
40
Maximum Allowable Heatsink Temperature (°C)
SD 1 100C ..C Series (400V to 2000V )
30°
60°
0
05001000 1500 2000 2500 3000
Average Forward Current (A)
(Double Side Cooled)
R (D C ) = 0.038 K/W
th J-hs
Cond uc tion Pe riod
90°
120°
180°
DC
Fig. 4 - Current Ratings Characteristics
SD1100C..C Series (250 0V t o 3200V )
0200400600800
Ave rage F orw ard C urrent ( A)
(Single Side Co oled)
R (DC) = 0.076 K/W
thJ- hs
Conduction Angle
30°
60°
90°
120°
180°
Fig. 5 - Current Ratings Characteristics
180
160
140
120
100
80
60
40
20
Maximum Allowable Heatsink Tem perature (°C)
SD 110 0C ..C Series (400V to 2000V )
30°
0400800120016002000
Average Forward Current (A)
(D ouble Side C ooled)
R (DC ) = 0.038 K /W
th J-hs
Cond uc tion A ngle
60°
90°
120°
180°
Fig. 3 - Current Ratings Characteristics
150
140
130
120
110
100
Maximum Allowable Heatsink Temperature (°C)
SD1100C..C Ser ies (25 00V to 32 00V)
90
80
70
60
50
40
30
20
30°
0200 400 600 800 1000 1200 1400
Average Forward Current (A)
(Single Side Cooled)
R (DC) = 0.076 K/W
th J-hs
Conduction Period
90°
60°
120°
180°
Fig. 6 - Current Ratings Characteristics
DC
SD1100C..C Series
Vishay High Power Products
150
140
130
120
110
100
Maximum Allowable Heatsink Temperature (°C)
150
140
130
120
110
100
Maximum Allowable Heatsink Temperature (°C)
SD1100C..C Series (2500V to 3200V)
90
80
70
60
50
40
30
20
0200 400 600 800 1000 1200 1400
Average Forward Current (A)
(Dou ble Side Co oled )
R (D C ) = 0.038 K/W
thJ-h s
Conduction Angle
30°
60°
90°
120°
Fig. 7 - Current Ratings Characteristics
SD1100C..C Series (2500V to 3200V)
90
80
70
30°
60
50
40
30
20
0400800 1200 1600 2000 2400
Avera ge Fo rw ard Curren t (A )
(Double Side Cooled)
R (D C) = 0.0 38 K/W
thJ-h s
Conduction Period
60°
90°
120°
180°
DC
Fig. 8 - Current Ratings Characteristics
Standard Recovery Diodes
(Hockey PUK Version),
1400 A
180°
450 0
400 0
DC
180°
350 0
120°
90°
300 0
60°
30°
250 0
200 0
150 0
100 0
500
0
Maximum Average Forward Power Loss (W )
0500 1000 1500 2000 2500 3000
Average Forward Current (A)
RMS Lim it
Conduction Period
SD1100C ..C Series
(400V to 2000V)
T = 180°C
J
Fig. 10 - Forward Power Loss Characteristics
3000
2500
2000
1500
1000
500
Maximum Average Forward Power Loss (W)
180°
120°
90°
60°
30°
0
0200 400 600 800 1000 1200 1400
Average Forward Current (A)
RMS Limit
Conduction Angle
SD1100C..C Series
(2500V to 320 0V)
T = 150°C
J
Fig. 11 - Forward Power Loss Characteristics
350 0
180°
120°
90°
60°
30°
040080012001600
Average Forward Current (A)
RMS Limit
Conduction Angle
SD1100C..C Series
(400V to 2000 V)
T = 180°C
J
Maximum Average Forward Power Loss (W)
300 0
250 0
200 0
150 0
100 0
500
0
Fig. 9 - Forward Power Loss Characteristics
3500
DC
180°
3000
120°
90°
2500
60°
30°
2000
1500
1000
500
0
Maximum Average Forward Power Loss (W)
0 400 800 1200160020002400
Aver a ge Forw ard C urrent (A)
RMS Limit
Conduction Period
SD1100C..C Series
(2500V to 3200V )
T = 150°C
J
Fig. 12 - Forward Power Loss Characteristics
SD1100C..C Series
Standard Recovery Diodes
(Hockey PUK Version),
12000
At Any Rated Load Condition And With
Ra ted V A p p lied Fo llow in g S urg e .
11000
10000
9000
8000
7000
6000
5000
SD1 100C ..C S eries
4000
Peak Half Sin e Wave Forward Curren t (A)
(400V to 200 0V
3000
N u m b er O f E qu a l A m p l itu d e H alf C y cl e Cu rr e n t P ulse s (N )
Fig. 13 - Maximum Non-Repetitive Surge Current
14000
Maximum Non Repetitive Surge Current
13000
12000
11000
10000
9000
8000
7000
6000
5000
4000
Peak Half Sine Wave Forward Curr ent (A)
3000
0.010.11
Fig. 14 - Maximum Non-Repetitive Surge Current
RRM
)
In it i a l T = 1 8 0 ° C
J
@ 60 H z 0.0083 s
@ 50 H z 0.0100 s
Single and Double Side Cooled
Versus Pulse Train Duration.
SD1100C..C Series
(400V to 2000V
Pulse Train Duration (s)
In it ial T = 18 0 °C
No Voltage Reapplied
Rated V Reapplied
)
J
RRM
Single and Double Side Cooled
Vishay High Power Products
1400 A
11000
M aximum Non Repet itive Surge C urrent
10000
9000
8000
7000
6000
5000
SD1100C..C Series
4000
Peak Half Sine Wave Forward Current (A)
001011
(2500V to 3200V)
3000
0.010.11
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
100 0
Instantaneous Forward Current (A)
100
0.511 .522 .533.54
Instantaneo us Fo rwa rd Vo ltage (V)
Fig. 17 - Forward Voltage Drop Characteristics
Versus Pulse Train Duration.
No Voltage Reapplied
Rated V Reapplied
Pulse Train Duration (s)
T = 25°C
J
Initial T = 150 °C
J
RRM
T = 180°C
J
SD1100 C ..C Se ries
(400V to 200 0V
)
10000
At Any Rated Load Condition And With
Rated V Applied Following Surge.
9000
8000
7000
6000
5000
SD 1100C.. C Ser ies
4000
Peak Half Sine Wave Forward Current (A)
(2500V to 32 00V)
3000
Number Of Equal Amplitude Half Cycle C urrent Pulses (N)
RRM
Initial T = 150°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
T = 25°C
J
T = 150°C
J
1000
SD 1100C.. C Series
Instantane ous Forward Current (A)
100
001011
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Instantan eous Forward Voltag e (V)
(2500V to 32 00V
)
Fig. 18 - Forward Voltage Drop Characteristics
SD1100C..C Series
Vishay High Power Products
0.1
Steady St ate Value
R = 0.076 K /W
thJ-h s
(Single Sid e Cooled)
0.01
0.001
R = 0.038 K /W
thJ-h s
(Dou ble Side C ooled)
(D C O pera tion)
Fig. 19 - Thermal Impedance Z
SD1100C32C
th J -h s
T ra n sien t T h e rm a l Im p e d a n c e Z (K / W )
ORDERING INFORMATION TABLE
Device code
Standard Recovery Diodes
(Hockey PUK Version),
1400 A
SD1 100C ..C Series
Sq ua re W a ve Pu lse D uratio n ( s)
Characteristics
thJ-hs
0111.010.0100.0
1-Diode
2-Essential part number
3-0 = Standard recovery
4-C = Ceramic PUK
5-Voltage code x 100 = V
6-C = PUK case B-43
51324
6
(see Voltage Ratings table)
RRM
DIMENSIONS in millimeters (inches)
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
Outline Dimensions
Vishay High Power Products
B-43
42 (1.65) DIA. MAX.
0.8 (0.03) MIN.
both ends
14.4 (0.57)
15.4 (0.61)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
25.3 (1) DIA. MAX.
2 places
40.5 (1.59) DIA. MAX.
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
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