Vishay SD1053C..L Series Data Sheet

DO-200AB (B-PUK)

PRODUCT SUMMARY

I

F(AV)

SD1053C..L Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 920/1050 A

FEATURES

• High power FAST recovery diode series

• 2.0 to 3.0 µs recovery time

• High voltage ratings up to 3000 V

• High current capability

• Optimized turn-on and turn-off characteristics

• Low forward recovery

• Fast and soft reverse recovery

• Press PUK encapsulation

• Case style conform to JEDEC DO-200AB (B-PUK)

• Maximum junction temperature 150 °C

• RoHS compliant

• Lead (Pb)-free

• Designed and qualified for industrial level

920/1050 A

TYPICAL APPLICATIONS

• Snubber diode for GTO

• High voltage freewheeling diode

• Fast recovery rectifier applications

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS

I

F(AV)

I

F(RMS)

I

FSM

V

RRM

t

rr

T

J

T

hs

50 Hz 15 000 13 000

60 Hz 15 700 13 610

Range 1800 to 2500 1800 to 3000 V

T

J

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM REPETITIVE

TYPE NUMBER

SD1053C..S20L

SD1053C..S30L

VOLTAGE

CODE

18 1800 1900

22 2200 2300

25 2500 2600

18 1800 1900

22 2200 2300

25 2500 2600

28 2800 2900

30 3000 3100

RRM

PEAK REVERSE VOLTAGE

V

SD1053C..L

S20 S30

1050 920 A

55 55 °C

1940 1700

2.0 3.0 µs

25

- 40 to 150

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

UNITS

I

MAXIMUM

RRM

AT T

= TJ MAXIMUM

J

A

°C

mA

50

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SD1053C..L Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version),

920/1050 A

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS

Maximum average forward current
at heatsink temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 11 250 8450 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward
slope resistance

High level value of forward
slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

r

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 1940 1700

t = 10 ms

t = 8.3 ms 15 700 13 610

t = 10 ms

t = 8.3 ms 13 210 11 450

t = 10 ms

t = 8.3 ms 1027 772

t = 10 ms

t = 8.3 ms 727 546

(16.7 % x π x I
(I > π x I

(16.7 % x π x I

f1

(I > π x I

f2

Ipk = 1500 A, TJ = TJ maximum,

FM

t

= 10 ms sinusoidal wave

p

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

reapplied

100 % V

RRM

reapplied

< I < π x I

F(AV)

), TJ = TJ maximum 1.48 1.67

F(AV)

< I < π x I

F(AV)

), TJ = TJ maximum 0.33 0.45

F(AV)

F(AV)

F(AV)

SD1053C..L

S20 S30

1050 (450) 920 (390) A

55 (85) 55 (85) °C

15 000 13 000

12 620 10 930

= TJ maximum

J

1125 845

796 598

), TJ = TJ maximum 1.34 1.51

), TJ = TJ maximum 0.37 0.50

1.90 2.26 V

UNITS

A

2

kA

V

mΩ

s

RECOVERY CHARACTERISTICS

TYPICAL VALUES

AT TJ = 150 °C

AT 25 % I

(µs)

RRM

Q

(µC)

rr

4.0 400 180

I

(A)

I

rr

FM

t

rr

I

RM(REC)

t

Q

rr

dir

dt

CODE

MAXIMUM VALUE

= 25 °C

AT T

J

AT 25 % I

t

rr

RRM

(µs)

TEST CONDITIONS

I

pk

SQUARE

PULSE

(A/µs)

dI/dt

V

(V)

t

r

rr

(A)

S20 2.0

S30 3.0 4.5 550 230

1000 100 - 50

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
and storage temperature range

Maximum thermal resistance,
case junction to heatsink

Mounting force, ± 10 %

Approximate weight 255 g

Case style See dimensions - link at the end of datasheet DO-200AB (B-PUK)

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2 Revision: 14-May-08

T

J

R

, T

thJ-hs

Stg

DC operation single side cooled 0.073

DC operation double side cooled 0.031

- 40 to 150 °C

K/W

14 700

(1500)

(kg)

N

Document Number: 93167

SD1053C..L Series

Fast Recovery Diodes

(Hockey PUK Version),

920/1050 A

ΔR

CONDUCTION ANGLE

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.009 0.008 0.006 0.006

120° 0.011 0.011 0.011 0.011

90° 0.014 0.014 0.015 0.015

60° 0.020 0.021 0.021 0.022

30° 0.036 0.036 0.036 0.036

160

140

120

100

80

60

40

0 100 200 300 400 500 600 700

Maximum Allowable Heatsink Temperature (°C)

SD1053C .. S20L Se ries
(Single Side Cooled)
R ( DC) = 0.073 K/W

thJ-hs

Cond uc tion Angle

60°

30°

Average Forward Current (A)

90°

120°

180°

Fig. 1 - Current Ratings Characteristics

Vishay High Power Products

TEST CONDITIONS UNITS

= TJ maximum K/W

T

J

when devices operate at different conduction angles than DC

thJ-hs

160

140

120

100

80

60

40

20

0 100 200 300 400 500 600

Maximum Allowable Heatsink Temperature (°C)

Average Forward Current (A)

Fig. 3 - Current Ratings Characteristics

SD1053C ..S30L Serie s
(Single Side Cooled)
R ( DC) = 0.073 K/W

thJ-hs

Cond uctio n Angle

30°

60°

90°

120°

180°

160

140

120

100

80

60

40

20

0 200 400 600 800 1000 1200

Maximum Allowable Heatsink Temperature (°C)

SD 1 0 5 3C . . S20L Serie s
(Single Side Cooled)
R (DC) = 0.073 K/ W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

DC

Average Forward Current (A)

Fig. 2 - Current Ratings Characteristics

160

140

120

100

80

60

40

20

0

0 200 400 600 800 1000

Maximum Allowable Heatsink Temperature (°C)

SD 1 05 3 C . .S3 0L Se r i e s
(Sing le Side Cooled)
R (DC) = 0.073 K/ W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

Average Forward Current (A)

Fig. 4 - Current Ratings Characteristics

DC

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SD1053C..L Series

Vishay High Power Products

160

140

120

100

80

60

40

20

0

0 200 400 600 800 1000 1200 1400

Maximum Allowable Heatsink Te mperature (°C)

Fig. 5 - Current Ratings Characteristics

160

140

120

100

80

60

40

20

0

0 400 800 1200 1600 2000

Maximum Allowable Heatsink Temperature (°C)

Fig. 6 - Current Ratings Characteristics

SD1053C..S20L Serie s
(Double Side Cooled)
R (DC) = 0.031 K/W

thJ-hs

Conduction Angle

30°

60°

90°

120°

180°

Average Forward Current (A)

SD1053C ..S20L Se ries
(Double Side Cooled)
R (DC) = 0.031 K/W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

Average Forward Current (A)

Fast Recovery Diodes

(Hockey PUK Version),

920/1050 A

DC

160

140

120

100

80

60

40

20

0

0 400 800 120016002000

Maximum Allowa ble Heatsink Temp erature (°C)

SD 10 5 3 C .. S3 0L Se r i e s
(Double Side Cooled)
R (DC) = 0.031 K/ W

thJ-hs

Cond uction Period

30°

60°

90°

120°

180°

DC

Average Fo rward Current (A)

Fig. 8 - Current Ratings Characteristics

3500

3000

2500

2000

1500

1000

500

Maximum Average Forward Power Loss (W)

180°
120°

90°
60°
30°

SD 1 0 53 C . . S2 0L Se r i e s
T = 150°C

J

0

0 200 400 600 800 1000 1200 1400

Ave ra g e Forwa rd Current (A)

RM S Li m it

Cond uction Angle

Fig. 9 - Forward Power Loss Characteristics

160

140

120

100

80

60

40

20

0

0 200 400 600 800 1000 1200

Maximum Allowable Heatsink Temperature (°C)

SD1053C..S30L Seri es
(Double Side Cooled)
R (DC) = 0.031 K/ W

thJ-hs

Conduction Angle

90°

60°

30°

Average Forward Current (A)

Fig. 7 - Current Ratings Characteristics

120°

180°

4500

4000

3500

3000

2500

2000

1500

1000

500

Maximum Average Forward Power Loss (W)

DC
180°
120°

90°
60°
30°

RM S L i m i t

Conduction Period

SD1053C ..S20L Se rie s
T = 150°C

J

0

0 400 800 120016002000

Av era ge Fo rwa rd Curren t ( A)

Fig. 10 - Forward Power Loss Characteristics

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Document Number: 93167

4 Revision: 14-May-08

SD1053C..L Series

3200

Maximum Average Forwa rd Power Loss (W)

2800

2400

2000

1600

1200

800

400

0

180°
120°

90°
60°
30°

SD1053C..S30L Se rie s
T = 150°C

J

0 200 400 600 800 1000 1200

Average Forward Current (A)

RM S Li m i t

Conduction Angle

Fig. 11 - Forward Power Loss Characteristics

4500

4000

3500

3000

2500

2000

1500

1000

500

Maximum Average Forward Power Loss (W)

DC
180°
120°

90°

60°

30°

RM S Li m i t

Conduction Period

SD1053C ..S30L Serie s
T = 1 50 °C

J

0

0 400 800 120016002000

Average Forward Current (A)

Fig. 12 - Forward Power Loss Characteristics

Fast Recovery Diodes

(Hockey PUK Version),

920/1050 A

Vishay High Power Products

16000

Maximum Non Rep etitive Surge Current

14000

12000

10000

8000

6000

SD1053C ..S20L Se ries

4000

Peak Half Sine Wave Forward Current (A)

2000

0.01 0.1 1

Fig. 14 - Maximum Non-Repetitive Surge Current

12000

At Any Rat ed Lo ad Cond itio n And With

11000

10000

9000

8000

7000

6000

5000

4000

Pe ak Ha l f Sine Wav e Fo rward Curre nt (A)

3000

Number Of Eq ual Amp litude Half Cyc le Current Pulses (N)

Rated V A p plied Following Surg e.

SD1053C ..S30L Se ries

110100

Fig. 15 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Ve rsus Pulse Trai n Dura tio n.

Pulse Train Duration (s)

RRM

Initia l T = 150 °C

No Voltage Reapplied
Rated V Rea pplied

RRM

Init ial T = 150°C
@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

J

J

14000

At Any Ra ted Load Co ndition And With

13000

12000

11000

10000

Peak Half Sine Wave Forward Current (A)

Numbe r Of Eq ual Am plitud e Half Cyc le Current Pulses (N)

Rated V App lied Following Surg e.

RRM

9000

8000

7000

6000

SD1053C ..S20L Se rie s

5000

4000

110100

Init ial T = 150 °C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Fig. 13 - Maximum Non-Repetitive Surge Current

13000

Maximum Non Repet itive Surge Current

12000

11000

10000

9000

8000

7000

6000

5000

SD1053C. .S30L Series

4000

Pe ak Ha lf Sine Wave Forward Current (A)

3000

0.01 0.1 1

Versus Pulse Train Durat ion.

Pul se Tr a in Dura t io n ( s)

Init ial T = 150 °C

No Voltage Reapplied
Rated V Reapplied

RRM

J

Fig. 16 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

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SD1053C..L Series

Vishay High Power Products

10000

T = 2 5° C

J

T = 1 50 °C

J

1000

SD1053C ..S20L Se ries

Instantaneous Forward Current (A)

100

11.522.533.544.55

Instant aneous Forward Voltage (V)

Fig. 17 - Forward Voltage Drop Characteristics Fig. 18 - Forward Voltage Drop Characteristics

0.1

SD1053C..S20/ S30L Series

thJ-hs

Fast Recovery Diodes

(Hockey PUK Version),

920/1050 A

10000

Instantaneous Forward Current (A)

T = 25 ° C

J

T = 1 50 °C

J

1000

SD 10 5 3 C .. S3 0L Se r ie s

100

1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5

Instantaneous Forward Voltage (V)

0.01

0.00 1

Transient Thermal Impedance Z (K/W)

0.001 0.01 0.1 1 10 100

100

V

FP

80

60

40

Fo rw a r d Re c o v ery (V )

20

0

0 400 800 1200 1600 2000

Ra t e O f Ri se O f Fo rw a r d C u rr e n t - d i/ d t ( A/ u s)

I

T = 1 5 0° C

J

T = 25 ° C

J

SD1053C ..S20L Se rie s

Sq ua re Wa ve Pulse D ura tio n (s)

Fig. 19 - Thermal Impedance Z

St e a d y St a t e V a l u e

R = 0.073 K/ W

thJ-hs

(Single Side Cooled)

R = 0.031 K/ W

thJ-hs

(Double Side Co oled )

(DC Op eration)

Characteristic

thJ-hs

160

120

80

Forward Recovery (V)

40

0

0 400 800 1200 1600 2000

Rate Of Rise Of Forward Current - di/dt (A/us)

V

FP

T = 150°C

J

I

T = 2 5 ° C

J

SD1053C..S30L Series

Fig. 20 - Typical Forward Recovery Characteristics Fig. 21 - Typical Forward Recovery Characteristics

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Document Number: 93167

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SD1053C..L Series

Fast Recovery Diodes

(Hockey PUK Version),

6.5

5.5

4.5

3.5

Maximum Reverse Recovery Time - Trr (µs)

2.5

Rate Of Fall Of Forward Current - di/dt (A/µs)

Fig. 22 - Recovery Time Characteristics

1000

900

800

700

600

500

400

300

200

100

Maximum Reverse Rec overy Charge - Qrr (µC)

Rate Of Fall Of Forward Current - di/dt (A/µs)

Fig. 23 - Recovery Charge Characteristics

SD1053C..S20L Se rie s

6

T = 150 °C ; V > 100V

5

4

rJ

I = 1500 A

FM

Si n e Pu l se

1000 A

500 A

3

10 100 1000

I = 1500 A

FM

Si n e Pu l se

1000 A

500 A

SD1053C..S20L Serie s
T = 150 °C; V > 100V

J

0

0 50 100 150 200 250 300

r

920/1050 A

Vishay High Power Products

9

8.5

7.5

6.5

5.5

4.5

Maximum Reverse Recovery Time - Trr (µs)

3.5

Ra te O f Fall O f Forw ard Current - di/ dt (A/ µs)

Fig. 25 - Recovery Time Characteristics

1600

1400

1200

1000

800

600

400

200

Maximum Reverse Rec overy Ch arge - Qrr (µC)

Rat e Of Fal l Of Forw ard Cu rren t - d i/d t (A /µ s)

Fig. 26 - Recovery Charge Characteristics

SD1053C..S30L Se ries
T = 150 °C; V > 100V

8

J

r

7

6

5

I = 1500 A

FM

Si n e Pu l se

1000 A

500 A

4

10 100 1000

I = 1500 A

FM

Si n e Pu l s e

1000 A

500 A

SD1053C..S30L Serie s
T = 150°C; V > 100V

J

0

0 50 100 150 200 250 300

r

500

450

400

350

300

I = 1500 A

FM

Si n e Pu l se

1000 A

500 A

700

600

500

400

1000 A

500 A

I = 1500 A

FM

Si n e P u l se

250

200

150

100

50

0

Maximum Reverse Recovery Current - Irr (A)

Rate Of Fa ll Of Forward Current - di/ dt (A/µs)

SD1053C. .S20L Serie s
T = 1 50 ° C ; V > 1 00 V

J

r

0 50 100150200250300

Fig. 24 - Recovery Current Characteristics

300

200

100

0

Maximum Reve rse Rec ove ry Current - Irr (A)

Rat e Of Fa ll Of Fo rwa rd C urren t - d i/ d t ( A/ µs)

SD1053C..S30L Se ries
T = 1 5 0° C ; V > 10 0V

J

0 50 100 150 200 250 300

r

Fig. 27 - Recovery Current Characteristics

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SD1053C..L Series

Vishay High Power Products

1E4

10 jo ules p er p ulse

6

4

2

1

0.6

0.4

1E3

Pea k Fo rw ard Curre nt (A)

1E2

1E1 1E2 1E3 1E4

Fig. 28 - Maximum Total Energy Loss

1E4

1E3

Peak Forward Current (A)

1E2

20000

1E1 1E2 1E3 1E4

Fig. 29 - Frequency Characteristics

0.2

0.08

SD1053C. .S20L Serie s
Si n uso i d a l Pu l se

T = 150° C, V = 800V

J

tp

dv/dt = 1000V/µs

RRM

Pulse Ba se wi dt h (µ s)

Per Pulse Characteristics

400

1000

2000

3000

4000

6000

10000

15000

Pul se Ba sew id th (µ s)

SD 1 0 5 3 C . . S2 0L Se r i e s
Si n u s o i d a l Pu l se
T = 55°C , V = 800V

C

tp

dv/dt = 1000V/us

200

Fast Recovery Diodes

(Hockey PUK Version),

920/1050 A

50 Hz

100

RRM

1E4

100

200

400

600

1000

1500

2000

6000

10000

15000

4000

3000

20000

SD1053C..S20L Se rie s
Tr a p e z o i d a l P u l se

T = 55°C, V = 800V

C

d v/d t = 1000V/ us,

tp

di/dt = 300A/us

RRM

1E3

Pe a k Fo r w a rd Cu rre nt ( A )

1E2

1E1 1E2 1E3 1E4

Pulse Basewidth (µs)

Fig. 31 - Frequency Characteristics

1E4

10 jo ules pe r p ulse

6

4

2

1

1E3

Pea k Fo rwa rd Cu rre n t (A)

1E2

1 E1 1 E2 1 E3 1 E4

SD 10 53 C . .S2 0L Ser i e s
Trapezoidal Pulse

T = 150°C, V = 800V

tp

d v/ dt = 1000V/ µs, d i/d t = 100A / µs

0.8

0.6

0.4

J

RRM

Pulse Basewidth (µs)

Fig. 32 - Maximum Total Energy Loss

Per Pulse Characteristics

50 Hz

1E4

10 joule s p er p ulse

6

4

2

1E3

0.6

0.4

Peak Forward Curre nt ( A)

tp

1E2

1 E1 1 E2 1 E3 1 E4

1

0.8

SD 10 5 3C . . S20 L Se r i e s
Trapezoidal Pulse
T = 150°C, V = 800V

J

d v/ dt = 1000V/ µs, di /d t = 300A/ µs

RRM

Pu lse Ba se w id t h ( µs)

Fig. 30 - Maximum Total Energy Loss

1E4

50 Hz

100

200

400

600

1000

2000

4000

1E3

Peak Forwa rd Current (A )

20000

1E2

1E11E21E31E4

10000

15000

6000

SD1053C.. S20L Se rie s
Tr a p e z o i d a l Pu l s e
T = 55°C , V = 800V

C

dv/dt = 1000V/us

tp

di/dt = 100A/us

RRM

Pulse Basewidth (µs)

Fig. 33 - Frequency Characteristics

Per Pulse Characteristics

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Document Number: 93167

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SD1053C..L Series

Fast Recovery Diodes

(Hockey PUK Version),

920/1050 A

1E4

10 joules per pulse

6

4

2

1

0.6

1E3

Peak Forward Current (A)

1E2

1 E1 1 E2 1 E3 1 E4

Fig. 34 - Maximum Total Energy Loss

1E4

1E3

Pea k Fo rw ard C urrent (A )

1E2

1E11E21E31E4

15000

20000

Fig. 35 - Frequency Characteristics

0.4

0.2

SD1053C.. S30L Se rie s
Sinusoid a l Pulse
T = 150°C, V = 1000V

J

tp

dv/dt = 1000V/µs

RRM

Pu lse Ba se w i d t h ( µ s)

Per Pulse Characteristics

1000

2000

3000

4000

6000

10000

tp

Pulse Ba se wid t h (µs)

200

400

SD1053C. .S30L Series
Sinuso idal Pulse

T = 5 5°C, V = 1000V

C

dv/dt = 1000V/us

50 Hz

100

RRM

Vishay High Power Products

1E4

200

400

600

1000

1500

1E3

Peak Forward Current (A)

10000

15000

1E2

1E1 1E2 1E3 1E4

1E4

1E3

Peak Forward Current (A)

1E2

1E1 1E2 1E3 1E4

2000

3000

4000

6000

SD1053C..S30L Series
Tra p ezoid al Pulse
T = 55°C, V = 1000V

C

dv/dt = 1000V/us,

tp

d i/ d t = 300A/ us

RRM

Pulse Ba se w id t h (µ s)

Fig. 37 - Frequency Characteristics

10 jo ule s p er p ulse

6

4

2

1

0.8

0.6

SD1053C.. S30L Serie s
Tr a p e z o i d a l Pu l s e
T = 150°C, V = 1000V

J

tp

dv/dt = 1000V/µs, di/dt = 100A/µs

RRM

Pulse Ba se w id th (µ s)

Fig. 38 - Maximum Total Energy Loss

Per Pulse Characteristics

100

50 Hz

1E4

10 jo ule s p er p ulse

6

4

2

1E3

1

0.8

0.6

Pe ak Fo r w a rd Cu rr e n t (A )

1E2

1E1 1E2 1E3 1E4

SD1053C..S30L Series
Trapezoidal Pulse
T = 150°C, V = 1000V

J

tp

dv/dt = 1000V/µs, di/dt = 300A/µs

RRM

Pul se Ba sew id t h (µ s)

Fig. 36 - Maximum Total Energy Loss

1E4

200

400

600

1000

2000

6000

4000

3000

SD1053C ..S30L Serie s
Tr a p e z o i d a l P u l se
T = 55°C, V = 1000V

C

dv/dt = 1000V/us,

tp

d i/ d t = 100A /u s

RRM

1E3

Peak Forward Current (A)

1E2

10000

15000

1E1 1E2 1E3 1E4

Pulse Ba sew id th ( µ s)

Fig. 39 - Frequency Characteristics

100

50 Hz

Per Pulse Characteristics

Document Number: 93167 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 14-May-08 9

SD1053C..L Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

SD 105 3 C 30 S30 L

1

- Diode

2

- Essential part number

3

- 3 = Fast recovery

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

-trr code

7

- L = PUK case DO-200AB (B-PUK)

Fast Recovery Diodes

(Hockey PUK Version),

920/1050 A

51324

(see Voltage Ratings table)

RRM

67

www.vishay.com For technical questions, contact: [e-mail]
10 Revision: 14-May-08

Document Number: 93167

DIMENSIONS in millimeters (inches)

3.5 (0.14) DIA. NOM. x

1.8 (0.07) deep MIN. both ends

Outline Dimensions

Vishay High Power Products

DO-200AB (B-PUK)

58.5 (2.30) DIA. MAX.

0.8 (0.03)
both ends

25.4 (1)

26.9 (1.06)

Quote between upper and lower pole pieces has to be considered after

application of mounting force (see Thermal and Mechanical Specifications)

34 (1.34) DIA. MAX.

2 places

53 (2.09) DIA. MAX.

Document Number: 95246 For technical questions concerning discrete products, contact: [e-mail]
Revision: 05-Nov-07 For technical questions concerning module products, contact: [e-mail]

www.vishay.com

1

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

®

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1