Vishay SD103N SERIES, SD103R SERIES Data Sheet

Bulletin I2062 rev. B 12/96
SD103N/R SERIES
FAST RECOVERY DIODES Stud Version
Features
High power FAST recovery diode series
Typical Applications
Snubber diode for GTO High voltage free-wheeling diode Fast recovery rectifier applications
1 10A
Major Ratings and Characteristics
Parameters SD103N/R Units
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
I2t@
V
RRM
trrrange 1.0 to 2.0 µs
T
J
@ 50Hz 3570 A @ 60Hz 3730 A
50Hz 64 KA2s
@ 60Hz 58 KA
range 400 to 2500 V
@ T
J
www.irf.com
110 A
85 °C
173 A
25 °C
- 40 to 125 °C
2
s
case style
DO-205AC (DO-30)
1
SD103N/R Series
Bulletin I2062 rev. B 12/96
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
Type number Code peak and off-state voltage repetitive peak voltage T
04 400 500
SD103N/R..S10 08 800 900
10 1000 1100 12 1200 1300
SD103N/R..S15 14 1400 1500
16 1600 1700
SD103N/R..S20
20 2000 2100 25 2500 2600
Forward Conduction
Parameter SD103N/R Units Conditions
I
Max. average forward current 110 A 180° conduction, half sine wave.
F(AV)
@ Case temperature 85 °C
I
Max. RMS current 173 A DC @ 75°C case temperature
F(RMS)
Max. peak, one-cycle 3570 t = 10ms No voltage
I
FSM
non-repetitive forward current 3730 t = 8.3ms reapplied
2
t Maximum I2t for fusing 64 t = 10ms No voltage Initial TJ = TJ max.
I
2
I
t Maximum I2√t for fusing 636 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
Low level of threshold voltage 1.36 (16.7% x π x I
F(TO)1
High level of threshold voltage 1.94 (I > π x I
V
F(TO)2
r
Low level of forward slope resistance 2.55 (16.7% x π x I
f1
r
High level of forward slope resistance 1.11 (I > π x I
f2
V
Max. forward voltage 2.23 V Ipk= 345A, TJ = 25°C, tp = 400 µs square pulse
FM
max. repetitive V
RRM
, maximum non- I
RSM
VVmA
3000 t = 10ms 100% V 3140 t = 8.3ms reapplied Sinusoidal half wave,
58 t = 8.3ms reapplied 45 t = 10ms 100% V
41 t = 8.3ms reapplied
A
KA2s
V
m
F(AV)
), TJ = TJ max.
F(AV)
F(AV)
), TJ = TJ max.
F(AV)
RRM
RRM
< I < π x I
< I < π x I
), TJ = TJ max.
F(AV)
), TJ = TJ max.
F(AV)
max.
RRM
= 125°C
J
35
Recovery Characteristics
Code
T
= 25 oC
J
typical t
@ 25% I
rr
RRM
Test conditions Max. values @ T
I
pk
Square Pulse @ 25% I
di/dt V
r
t
rr
(µs) (A) (A/µs) (V) (µs) (µC) (A)
S10 1.0 1.6 21 27 S15 1.5 350 25 -30 2.3 61 37
S20 2.0 3.2 75 3 9
J
QrrI
RRM
2
= 125 °C
rr
www.irf.com
SD103N/R Series
Bulletin I2062 rev. B 12/96
Thermal and Mechanical Specification
Parameter SD103N/R Units Conditions
T
Max. operating temperature range -40 to 125
J
Max. storage temperature range -40 to 150
T
stg
Max. thermal resistance, junction to case 0.16 DC operation
R
thJC
Max. thermal resistance, case to heatsink 0.10 Mounting surface, smooth, flat and greased
R
thCS
T Mounting torque ± 10% 15.5 Not lubricated threads
13.5 Lubricated threads
wt Approximate weight 120 g
Case style DO-205AC(DO-30) See Outline Table
R
Conduction
thJC
(The following table shows the increment of thermal resistence R
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.011 0.012 T 120° 0.016 0.019
90° 0.021 0.023 K/ W 60° 0.029 0.030 30° 0.041 0.041
°C
K/W
Nm
when devices operate at different conduction angles than DC)
thJC
= TJ max.
J
Ordering Information Table
1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5 - Voltage code: Code x 100 = V 6 -trr code (see Recovery Characteristics table) 7 - P = Stud base DO-205AC (DO-30) 1/2" 20UNF-2A
M = Stud base DO-205AC (DO-30) M12 X 1.75
8 -7 B = Flag top terminals (for Cathode/ Anode Leads)
S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
None = Not isolated lead
9 - C = Ceramic housing (over 1600V)
V = Glass-metal seal (only up to 1600V)
Device Code
SD 10 3 R 25 S20 P B C
4
(see Voltage Ratings table)
RRM
51 2 3
7
6 89
www.irf.com
3
Loading...
+ 6 hidden pages