Bulletin I2062 rev. B 12/96
SD103N/R SERIES
FAST RECOVERY DIODES Stud Version
Features
High power FAST recovery diode series
1.0 to 2.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version JEDEC DO-30
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
1 10A
Major Ratings and Characteristics
Parameters SD103N/R Units
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
I2t@
V
RRM
trrrange 1.0 to 2.0 µs
T
J
@ 50Hz 3570 A
@ 60Hz 3730 A
50Hz 64 KA2s
@ 60Hz 58 KA
range 400 to 2500 V
@ T
J
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110 A
85 °C
173 A
25 °C
- 40 to 125 °C
2
s
case style
DO-205AC (DO-30)
1
SD103N/R Series
Bulletin I2062 rev. B 12/96
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
Type number Code peak and off-state voltage repetitive peak voltage T
04 400 500
SD103N/R..S10 08 800 900
10 1000 1100
12 1200 1300
SD103N/R..S15 14 1400 1500
16 1600 1700
SD103N/R..S20
20 2000 2100
25 2500 2600
Forward Conduction
Parameter SD103N/R Units Conditions
I
Max. average forward current 110 A 180° conduction, half sine wave.
F(AV)
@ Case temperature 85 °C
I
Max. RMS current 173 A DC @ 75°C case temperature
F(RMS)
Max. peak, one-cycle 3570 t = 10ms No voltage
I
FSM
non-repetitive forward current 3730 t = 8.3ms reapplied
2
t Maximum I2t for fusing 64 t = 10ms No voltage Initial TJ = TJ max.
I
2
I
√t Maximum I2√t for fusing 636 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
Low level of threshold voltage 1.36 (16.7% x π x I
F(TO)1
High level of threshold voltage 1.94 (I > π x I
V
F(TO)2
r
Low level of forward slope resistance 2.55 (16.7% x π x I
f1
r
High level of forward slope resistance 1.11 (I > π x I
f2
V
Max. forward voltage 2.23 V Ipk= 345A, TJ = 25°C, tp = 400 µs square pulse
FM
max. repetitive V
RRM
, maximum non- I
RSM
VVmA
3000 t = 10ms 100% V
3140 t = 8.3ms reapplied Sinusoidal half wave,
58 t = 8.3ms reapplied
45 t = 10ms 100% V
41 t = 8.3ms reapplied
A
KA2s
V
mΩ
F(AV)
), TJ = TJ max.
F(AV)
F(AV)
), TJ = TJ max.
F(AV)
RRM
RRM
< I < π x I
< I < π x I
), TJ = TJ max.
F(AV)
), TJ = TJ max.
F(AV)
max.
RRM
= 125°C
J
35
Recovery Characteristics
Code
T
= 25 oC
J
typical t
@ 25% I
rr
RRM
Test conditions Max. values @ T
I
pk
Square Pulse @ 25% I
di/dt V
r
t
rr
(µs) (A) (A/µs) (V) (µs) (µC) (A)
S10 1.0 1.6 21 27
S15 1.5 350 25 -30 2.3 61 37
S20 2.0 3.2 75 3 9
J
QrrI
RRM
2
= 125 °C
rr
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SD103N/R Series
Bulletin I2062 rev. B 12/96
Thermal and Mechanical Specification
Parameter SD103N/R Units Conditions
T
Max. operating temperature range -40 to 125
J
Max. storage temperature range -40 to 150
T
stg
Max. thermal resistance, junction to case 0.16 DC operation
R
thJC
Max. thermal resistance, case to heatsink 0.10 Mounting surface, smooth, flat and greased
R
thCS
T Mounting torque ± 10% 15.5 Not lubricated threads
13.5 Lubricated threads
wt Approximate weight 120 g
Case style DO-205AC(DO-30) See Outline Table
∆R
Conduction
thJC
(The following table shows the increment of thermal resistence R
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.011 0.012 T
120° 0.016 0.019
90° 0.021 0.023 K/ W
60° 0.029 0.030
30° 0.041 0.041
°C
K/W
Nm
when devices operate at different conduction angles than DC)
thJC
= TJ max.
J
Ordering Information Table
1 - Diode
2 - Essential part number
3 - 3 = Fast recovery
4 - N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5 - Voltage code: Code x 100 = V
6 -trr code (see Recovery Characteristics table)
7 - P = Stud base DO-205AC (DO-30) 1/2" 20UNF-2A
M = Stud base DO-205AC (DO-30) M12 X 1.75
8 -7 B = Flag top terminals (for Cathode/ Anode Leads)
S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
None = Not isolated lead
9 - C = Ceramic housing (over 1600V)
V = Glass-metal seal (only up to 1600V)
Device Code
SD 10 3 R 25 S20 P B C
4
(see Voltage Ratings table)
RRM
51 2 3
7
6 89
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