VISHAY SD103AWS-V, SD103BWS-V, SD103CWS-V Technical data
SD103AWS-V/103BWS-V/103CWS-V
Small Signal Schottky Diodes
Features
• The SD103 series is a metal-on-silicon
Schottky barrier device which is protected
by a PN junction guard ring
•
This diode is also available in the
Mini-MELF case with the type designations LL103A
to LL103C, DO35 case with the type designations
SD103A to SD103C and SOD123 case with type
designations SD103AW-V to SD103CW-V
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching
and low logic level applications
• For general purpose applications
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e3
Vishay Semiconductors
20145
Mechanical Data
Case: SOD323 Plastic case
Weight: approx. 4.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Par t Ordering code Type Marking Remarks
SD103AWS-V SD103AWS-V-GS18 or SD103AWS-V-GS08 S6 Tape and Reel
SD103BWS-V SD103BWS-V-GS18 or SD103BWS-V-GS08 S7 Tape and Reel
SD103CWS-V SD103CWS-V-GS18 or SD103CWS-V-GS08 S8 Tape and Reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Val ue Unit
Peak reverse voltage
Power dissipation
Single cycle surge 10 µs square wave
1)
Valid provided that electrodes are kept at ambient temperature
SD103AWS-V
SD103BWS-V
SD103CWS-V
V
V
V
RRM
RRM
RRM
P
I
FSM
40 V
30 V
20 V
1)
tot
200
2A
mW
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Valu e Unit
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Valid provided that electrodes are kept at ambient temperature
R
thJA
T
j
T
stg
1)
500
1)
125
- 55 to + 150
K/W
°C
1)
°C
Document Number 85682
Rev. 1.7, 18-Sep-06
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1
SD103AWS-V/103BWS-V/103CWS-V
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Par t Symbol Min Ty p. Max Unit
Leakage current V
V
V
Forward voltage drop I
Diode capacitance
Reverse recovery time I
F
I
F
V
F
recover to 0.1 I
Typical Characteristics
T
= 25 °C unless otherwise specified
amb
= 30 V
R
= 20 V
R
= 10 V
R
SD103AWS-V
SD103BWS-V
SD103CWS-V
= 20 mA V
= 200 mA V
= 0 V, f = 1 MHz C
R
= IR = 50 mA to 200 mA,
R
I
R
I
R
I
R
F
F
D
t
rr
5µA
5µA
5µA
370 mV
600 mV
50 pF
10 ns
1000
100
10
1
F
0.1
I - Forward Current (mA)
0.01
0 0.4 0.6 0.8 1.00.2
18488
VF- Forward Voltage (V)
Figure 1. Typical Variation of Forward Current vs. Forward Voltage
5
= 300 ms
t
p
4
duty cycle = 2 %
3
2
1000
= 125 °C
T
amb
100
10
1
- Reverse Current (µA)
0.1
R
I
0.01
0 5 10 15 20 25 30 35 40 45 50
20084
V - Reverse Voltage (V)
R
100 °C
75 °C
50 °C
25 °C
Figure 3. Typical Variation of Reverse Current at Various
Temperatures
100
10
F
1
I - Forward Current (A)
0
18489
0.5 1.00 1.5
VF- Forward Voltage (V)
Figure 2. Typical High Current Forward Conduction Curve
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2
D
C- Diode Capacitance (pF)
1
10 20 30 40 050
18491
V R - Reverse Voltag e (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
Document Number 85682
Rev. 1.7, 18-Sep-06
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