New Product
SB1H90, SB1H100
Vishay General Semiconductor
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• High barrier technology for improved high TJ
• Guardring for overvoltage protection
DO-204AL (DO-41)
• Low power losses and high efficiency
• Low forward voltage drop
• Very low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
max. 175 °C
T
J
1.0 A
90 V, 100 V
50 A
0.62 V
1.0 μA
For use in middle voltage high frequency inverters,
freewheeling, dc-to-dc converters and polarity protection
applications.
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL SB1H90 SB1H100 UNIT
Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current I
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
Peak repetitive reverse surge current at t
Maximum operating junction temperature T
Storage temperature range T
) dV/dt 10 000 V/μs
R
= 2.0 μs, 1 kHz I
p
I
RRM
RMS
DC
F(AV)
FSM
RRM
J
STG
90 100 V
63 70 V
90 100 V
1.0 A
50 A
1.0 A
175 °C
- 55 to + 175 °C
Document Number: 88716 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 04-Aug-09 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
New Product
SB1H90, SB1H100
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL SB1H90 SB1H100 UNIT
= 25 °C
T
J
= 125 °C 0.62
T
J
= 25 °C 0.86
T
J
T
= 125 °C 0.70
J
T
= 25 °C
J
= 125 °C 0.5 mA
T
J
(1)
V
F
(2)
I
R
Maximum instantaneous forward voltage
Maximum reverse current at rated V
R
I
= 1.0 A
F
= 2.0 A
I
F
Notes
(1)
Pulse test: 300 ms pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL SB1H90 SB1H100 UNIT
(1)
R
Maximum thermal resistance
Note
(1)
P.C.B. mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
θJA
(1)
R
θJL
0.77
1.0 μA
57
15
V
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SB1H100-E3/54 0.34 54 5500 13" diameter paper tape and reel
SB1H100-E3/73 0.34 73 3000 Ammo pack packaging
SB1H100HE3/54
SB1H100HE3/73
(1)
(1)
0.34 54 5500 13" diameter paper tape and reel
0.34 73 3000 Ammo pack packaging
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.2
1.0
0.8
0.6
0.4
0.2
Average Forward Current (A)
0
0
5025 75 100 125 150 175
Case Temperature (°C)
200
100
Instantaneous Forward Current (A)
0.01
10
TJ = 150 °C
1
0.1
0.20 0.4 0.8 1.0
Instantaneous Forward Voltage (V)
TJ = 175 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
0.6 1.4 1.6 1.8
1.2
Fig. 1 - Forward Current Derating Curve Fig. 2 - Typical Instantaneous Forward Characteristics
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88716
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 04-Aug-09
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