VISHAY S952T, S952TR, S952TRW Datasheet
S952T/S952TR/S952TRW
Vishay Telefunken
MOSMIC for TV–Tuner Prestage with 9 V Supply
Voltage
MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 9 V supply voltage.
Features
D
Easy Gate 1 switch-off with PNP switching transistors inside PLL
D
High AGC-range with less steep slope
D
Integrated gate protection diodes
C block
AGC
RF in
C block
D
Low noise figure
D
High gain
D
Improved cross modulation at gain reduction
D
SMD package
G2
G1
S
RFC
D
C block
V
DD
RF out
94 9296
21
94 9279
13 579
43
S952T Marking: 952
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
2
1
13 56613 654
34
S952TRW Marking: W95
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
21
94 9278
95 10831
43
S952TR Marking: 52R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85062
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
S952T/S952TR/S952TRW
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Drain - source voltage V
Drain current I
Gate 1/Gate 2 - source peak current ±I
Gate 1/Gate 2 - source voltage ±V
Total power dissipation T
≤ 60 °C P
amb
Channel temperature T
Storage temperature range T
DS
D
G1/G2SM
G1/G2SM
tot
Ch
stg
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
3
R
thChA
12 V
30 mA
10 mA
6 V
200 mW
150
–55 to +150
450 K/W
°
C
°
C
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Drain - source
±I
G1S
= 10 mA, V
G2S
= V
= 0 ±V
G1S
(BR)DSS
15 V
breakdown voltage
Gate 1 - source
±I
G1S
= 10 mA, V
= VDS = 0 ±V
G2S
(BR)G1SS
7 10 V
breakdown voltage
Gate 2 - source
±I
G2S
= 10 mA, V
= VDS = 0 ±V
G1S
(BR)G2SS
7 10 V
breakdown voltage
Gate 1 - source
+V
G1S
= 5 V, V
= VDS = 0 +I
G2S
G1SS
leakage current
Gate 2 - source
±V
= 5 V, V
G2S
= VDS = 0 ±I
G1S
G2SS
leakage current
Drain - source
VDS = V
RG1
= 9 V, V
= 4 V, RG1 = 390 k
G2S
W
I
DSO
7 10 14 mA
operating current
Gate 1 - source
VDS = V
RG1
= 9 V, V
= 4 V, ID = 100 mA V
G2S
G1S(OFF)
0.4 1.2 V
cut-off voltage
Gate 2 - source
VDS = V
= 9 V, RG1 = 390 kW, ID = 100 mA V
RG1
G2S(OFF)
1.0 V
cut-off voltage
Remark on improving intermodulation behavior:
By setting RG1 = 300 kW instead of 390 kW, typical value of I
modulation behavior will be performed.
will raise up to about 15 mA and improved inter-
DSO
20 nA
20 nA
www.vishay.de • FaxBack +1-408-970-5600
2 (6)
Document Number 85062
Rev. 3, 20-Jan-99
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