VISHAY S949T, S949TR, S949TRW Datasheet
S949T/S949TR/S949TRW
Vishay Telefunken
MOSMIC for TV–Tuner Prestage with 9 V Supply
Voltage
MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 9 V supply voltage.
Features
D
Integrated gate protection diodes
D
Low noise figure
D
High gain
D
Biasing network on chip
C block
AGC
RF in
C block
D
Improved cross modulation at gain reduction
D
High AGC-range
D
SMD package
G2
G1
S
RFC
D
C block
V
DD
RF out
94 9296
21
94 9279
13 579
43
S949T Marking: 949
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
2
1
13 56613 654
34
S949TRW Marking: W99
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
21
94 9278
95 10831
43
S949TR Marking: 99R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85061
Rev. 3, 20-Jan-99
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S949T/S949TR/S949TRW
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Drain - source voltage V
Drain current I
Gate 1/Gate 2 - source peak current ±I
Gate 1/Gate 2 - source voltage ±V
Total power dissipation T
≤ 60 °C P
amb
Channel temperature T
Storage temperature range T
DS
D
G1/G2SM
G1/G2SM
tot
Ch
stg
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
3
R
thChA
12 V
30 mA
10 mA
6 V
200 mW
150
–55 to +150
450 K/W
°
C
°
C
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Gate 1 - source
±I
G1S
= 10 mA, V
= VDS = 0 ±V
G2S
(BR)G1SS
7 10 V
breakdown voltage
Gate 2 - source
±I
G2S
= 10 mA, V
= VDS = 0 ±V
G1S
(BR)G2SS
7 10 V
breakdown voltage
Gate 1 - source +V
leakage current
Gate 2 - source
–V
±V
= 5 V, V
G1S
= 5 V, V
G1S
= 5 V, V
G2S
= VDS = 0 +I
G2S
= VDS = 0 –I
G2S
= VDS = 0 ±I
G1S
G1SS
G1SS
G2SS
leakage current
Drain current VDS = 9 V, V
Self-biased
VDS = 9 V, V
G1S
G1S
= 0, V
= nc, V
= 4 V I
G2S
= 4 V I
G2S
DSS
DSP
50 500mA
8 12 16 mA
operating current
Gate 2 - source
VDS = 9 V, V
= nc, ID = 100 mA V
G1S
G2S(OFF)
1.0 V
cut-off voltage
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with V
Using open collector switching transistor (inside of PLL), insert 10 kW collector resistor.
< 0.7 V is feasible.
G1S
50
m
100mA
20 nA
A
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Document Number 85061
Rev. 3, 20-Jan-99
Electrical AC Characteristics
g
g
S949T/S949TR/S949TRW
Vishay Telefunken
VDS = 9 V, V
= 4 V, f = 1 MHz , T
G2S
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward transadmittance y
Gate 1 input capacitance C
Feedback capacitance C
Output capacitance C
Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz G
GS = 3,3 mS, GL = 1 mS, f = 800 MHz G
AGC range VDS = 9 V, V
= 1 to 4 V, f = 800 MHz
G2S
25 30 35 mS
21s
2.3 2.7 pF
25 fF
1 pF
28 dB
17 20 dB
45 dB
D
issg1
rss
oss
ps
ps
G
ps
Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1 dB
GS = 3,3 mS, GL = 1 mS, f = 800 MHz F 1.3 dB
Common Source S–Parameters
VDS = 9 V , V
f/MHz
50 –0.01 –4.7 9.57 174.6 –62.54 87.6 –0.17 –2.3
100 –0.03 –9.5 9.48 168.3 –56.18 84.2 –0.23 –3.6
150 –0.12 –14.0 9.38 161.8 –52.86 81.0 –0.24 –5.4
200 –0.19 –18.4 9.26 155.8 –50.58 78.7 –0.26 –7.1
250 –0.29 –23.1 9.11 149.3 –48.96 75.6 –0.28 –9.1
300 –0.40 –27.4 8.96 143.7 –47.89 73.4 –0.33 –10.6
350 –0.52 –31.9 8.73 138.0 –47.02 71.5 –0.36 –12.3
400 –0.66 –35.9 8.57 132.0 –46.44 70.0 –0.40 –14.0
450 –0.80 –39.9 8.33 126.9 –46.25 69.1 –0.44 –15.6
500 –0.95 –44.0 8.14 121.5 –46.08 68.7 –0.48 –17.2
550 –1.08 –47.9 7.93 116.3 –46.21 69.9 –0.51 –18.8
600 –1.25 –51.6 7.70 110.9 –46.22 73.2 –0.55 –20.4
650 –1.40 –55.3 7.48 106.5 –46.19 74.3 –0.59 –21.7
700 –1.53 –59.0 7.25 101.6 –46.47 78.5 –0.61 –23.4
750 –1.68 –62.5 7.10 96.9 –47.15 83.5 –0.62 –24.9
800 –1.83 –66.0 6.90 92.1 –47.48 92.3 –0.65 –26.4
850 –1.98 –69.4 6.71 87.6 –47.39 103.5 –0.67 –28.0
900 –2.08 –72.7 6.52 82.6 –46.82 115.7 –0.70 –29.8
950 –2.21 –76.0 6.36 78.0 –45.32 125.0 –0.71 –31.4
1000 –2.34 –79.4 6.17 74.0 –44.07 129.4 –0.68 –33.0
1050 –2.47 –82.6 6.02 69.7 –43.32 134.1 –0.70 –34.6
1100 –2.62 –85.6 5.80 65.0 –42.50 140.6 –0.74 –36.0
1150 –2.74 –88.8 5.69 60.5 –41.25 145.5 –0.72 –37.8
1200 –2.84 –91.8 5.56 56.3 –39.97 150.1 –0.69 –39.7
1250 –2.92 –94.8 5.52 51.9 –38.65 153.2 –0.60 –41.9
1300 –3.04 –97.7 5.34 47.1 –37.46 154.8 –0.67 –43.3
= 4 V , Z0 = 50 W,T
G2S
S11 S21 S12 S22
LOG
MAG
dB deg dB deg dB deg dB deg
ANG
= 25_C, unless otherwise specified
amb
LOG
MAG
ANG
LOG
MAG
ANG
LOG
MAG
ANG
Document Number 85061
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
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