VISHAY S860T Datasheet
Vishay Telefunken
BIPMIC – Cascadable Silicon Bipolar Amplifier
Electrostatic sensitive device.
Observe precautions for handling.
Applications
General purpose for narrow and broad band IF and RF
amplifiers in commercial and industrial applications
with low power consumption. This allows to build am-
Features
D
Broadband amplification
D
Low operating voltage (3 V)
D
Low operating current
plifiers with minimal external circuitry , thus providing a
simple, cost effective way to achieve low level amplification, for example in cordless phones.
D
High gain (8.5 dB @900 MHz and 50 W)
D
Low cost surface mount plastic package
D
Few external components
S860T
21
94 9279
13 579
43
S860T Marking: 860
Plastic case (SOT 143)
1 = RF-output, 2 = Ground,
3 = RF-input, 4 = Ground
Typical biasing configuration
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Device current I
RF input power P
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 146 °C P
amb
bias
in
tot
stg
4 mA
0 dBm
8 mW
j
150
–65 to +150
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Document Number 85055
Rev. 3, 20-Jan-99
3
R
thJA
www.vishay.de • FaxBack +1-408-970-5600
450 K/W
1 (5)
S860T
g
g
Vishay Telefunken
Electrical AC Characteristics
I
= 3 mA , Z0 = 50 W, T
bias
Parameter Test Conditions Symbol Min Typ Max Unit
Power gain f = 900 MHz G
3 dB bandwidth f
Noise figure f = 900 MHz F 5.5 dB
Intermodulation distortion 7 mV input voltage, f = 900 MHz IM
Device voltage V
= 25_C, unless otherwise specified
amb
6 8.5 dB
5 7.5 dB
2.5 GHz
f = 1.9 GHz G
p
p
3dB
f = 1.9 GHz F 6.5 dB
40 dB
45 dB
1.8 V
7 mV input voltage, f = 1.9 GHz IM
3
3
d
www.vishay.de • FaxBack +1-408-970-5600
2 (5)
Document Number 85055
Rev. 3, 20-Jan-99
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