Vishay Telefunken
BIPMIC – Cascadable Silicon Bipolar Amplifier
Electrostatic sensitive device.
Observe precautions for handling.
Applications
General purpose for narrow and broad band IF and RF
amplifiers in commercial and industrial applications
with low power consumption. This allows to build am-
Features
D
Broadband amplification
D
Low operating voltage (3 V)
D
Low operating current
plifiers with minimal external circuitry , thus providing a
simple, cost effective way to achieve low level amplification, for example in cordless phones.
D
High gain (8.5 dB @900 MHz and 50 W)
D
Low cost surface mount plastic package
D
Few external components
S860T
21
94 9279
13 579
43
S860T Marking: 860
Plastic case (SOT 143)
1 = RF-output, 2 = Ground,
3 = RF-input, 4 = Ground
Typical biasing configuration
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Device current I
RF input power P
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 146 °C P
amb
bias
in
tot
stg
4 mA
0 dBm
8 mW
j
150
–65 to +150
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Document Number 85055
Rev. 3, 20-Jan-99
3
R
thJA
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450 K/W
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S860T
g
g
Vishay Telefunken
Electrical AC Characteristics
I
= 3 mA , Z0 = 50 W, T
bias
Parameter Test Conditions Symbol Min Typ Max Unit
Power gain f = 900 MHz G
3 dB bandwidth f
Noise figure f = 900 MHz F 5.5 dB
Intermodulation distortion 7 mV input voltage, f = 900 MHz IM
Device voltage V
= 25_C, unless otherwise specified
amb
6 8.5 dB
5 7.5 dB
2.5 GHz
f = 1.9 GHz G
p
p
3dB
f = 1.9 GHz F 6.5 dB
40 dB
45 dB
1.8 V
7 mV input voltage, f = 1.9 GHz IM
3
3
d
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Document Number 85055
Rev. 3, 20-Jan-99
Common Emitter S–Parameters
S860T
Vishay Telefunken
VCC = 2.4 V , R
f/MHz
100 –2.28 –2.7 7.78 174.9 –20.37 19.2 –2.06 –11.3
200 –2.34 –5.4 7.72 170.2 –20.00 15.3 –2.54 –10.6
300 –2.40 –8.1 7.69 165.6 –19.49 16.1 –2.86 –12.4
400 –2.46 –10.3 7.64 160.4 –19.28 18.9 –2.88 –14.5
500 –2.57 –13.0 7.63 155.7 –18.93 22.0 –2.84 –17.6
600 –2.66 –15.5 7.59 150.7 –18.39 25.4 –2.84 –21.4
700 –2.71 –17.7 7.49 146.6 –17.63 27.0 –3.01 –25.7
800 –2.75 –20.2 7.41 141.9 –16.93 27.1 –3.40 –29.7
900 –2.85 –22.5 7.38 137.2 –17.21 26.0 –3.45 –26.4
1000 –2.93 –24.9 7.33 132.9 –16.42 27.6 –3.62 –32.3
1100 –3.05 –27.1 7.24 128.6 –15.89 29.2 –3.55 –36.3
1200 –3.18 –29.7 7.10 124.4 –15.36 29.2 –3.67 –39.9
1300 –3.28 –32.6 7.08 120.1 –14.63 30.4 –3.53 –45.5
1400 –3.37 –35.0 7.03 116.4 –14.18 27.5 –4.22 –49.1
1500 –3.54 –37.4 6.87 112.1 –13.88 26.0 –4.62 –51.5
1600 –3.63 –40.4 6.91 108.2 –13.64 24.4 –5.03 –53.6
1700 –3.75 –43.1 6.82 104.5 –13.36 23.4 –5.24 –55.4
1800 –3.90 –46.1 6.76 100.8 –13.03 23.0 –5.26 –58.0
1900 –4.10 –49.0 6.78 96.5 –12.66 22.3 –5.40 –61.9
2000 –4.24 –52.2 6.73 93.0 –12.35 20.6 –5.75 –65.3
2100 –4.35 –55.7 6.65 89.1 –12.14 19.0 –6.09 –67.7
2200 –4.54 –59.1 6.64 85.4 –11.98 17.7 –6.34 –69.9
2300 –4.81 –62.2 6.46 81.8 –11.79 17.1 –6.40 –72.0
2400 –4.75 –65.7 6.61 78.5 –11.35 16.6 –6.31 –76.7
2400 –5.02 –72.4 6.74 74.4 –10.86 13.3 –6.69 –82.9
2600 –5.61 –75.7 6.61 69.5 –10.64 10.7 –7.13 –87.0
2700 –6.05 –80.4 6.54 65.3 –10.54 8.6 –7.60 –89.9
2800 –6.50 –84.4 6.56 61.8 –10.48 6.3 –8.10 –92.8
2900 –7.02 –89.6 6.33 57.3 –10.42 3.9 –8.60 –96.0
3000 –7.45 –94.6 6.31 53.0 –10.38 1.8 –9.11 –99.0
= 200 W , Z0 = 50 W,
bias
S11 S21 S12 S22
LOG
MAG
dB deg dB deg dB deg dB deg
ANG
T
= 25_C, unless otherwise specified
amb
LOG
MAG
ANG
LOG
MAG
ANG
LOG
MAG
ANG
Document Number 85055
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
3 (5)
S860T
Vishay Telefunken
Dimensions of S860T in mm
96 12240
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Document Number 85055
Rev. 3, 20-Jan-99
S860T
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 85055
Rev. 3, 20-Jan-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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