VISHAY S858TA1 Datasheet
Vishay Telefunken
BIPMIC – Cascadable Silicon Bipolar Amplifier
Electrostatic sensitive device.
Observe precautions for handling.
Applications
General purpose 50 W gain block for narrow and broad
band IF and RF amplifiers in commercial and industrial
applications. The 50 W level allows directly to cascade
Features
D
Broadband amplification
D
Low operating voltage (6 V)
D
50 W cascadable gain block
D
High gain (17.5 dB @900 MHz)
this amplifier with minimal external circuitry, thus providing a simple, cost effective way to achieve low level
amplification.
D
Low noise figure (3.3 db @900 Mhz)
D
Low cost surface mount plastic package
D
Few external components
S858TA1
21
94 9279
13 579
43
S858TA1 Marking: 858
Plastic case (SOT 143)
1 = RF-output, 2 = Ground,
3 = RF-input, 4 = Ground
Typical biasing configuration
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Device current I
RF input power P
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60 °C P
amb
bias
in
tot
stg
35 mA
20 dBm
200 mW
j
150
–65 to +150
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Document Number 85053
Rev. 3, 20-Jan-99
3
R
thJA
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450 K/W
1 (3)
S858TA1
Vishay Telefunken
Electrical AC Characteristics
I
= 29 mA , Z0 = 50 W,T
bias
Parameter Test Conditions Symbol Min Typ Max Unit
Power gain f = 900 MHz G
3 dB bandwidth f
Input VSWR f = 0.1 to 2.5 GHz VSWR 1.8:1
Output VSWR f = 0.1 to 2.5 GHz VSWR 1.8:1
Noise figure f = 900 MHz F 3.3 dB
Intermodulation distortion 22.5 mV input voltage IM
Output power @1dB gain compression P
Device voltage V
Dimensions of S858TA1 in mm
= 25_C, unless otherwise specified
amb
p
3dB
3
–1dB
d
17 17.5 dB
0.5 GHz
50 dB
5 dBm
4.0 5.0 6.0 V
www.vishay.de • FaxBack +1-408-970-5600
2 (3)
96 12240
Document Number 85053
Rev. 3, 20-Jan-99
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