VISHAY S504T, S504TR, S504TRW Datasheet
S504T/S504TR/S504TRW
Vishay Telefunken
MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device.
Observe precautions for handling.
Applications
D
RFC
C block
V
DD
RF out
13650
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
Features
D
Easy Gate 1 switch-off with PNP switching
transistors inside PLL
D
High AGC-range with less steep slope
D
Integrated gate protection diodes
C block
AGC
C block
RF in
V
DD
D
Low noise figure
D
High gain
D
Improved cross modulation at gain reduction
D
SMD package
G2
G1
S
RG1
21
94 9279
13 579
43
S504T Marking: 504
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
2
1
13 56613 654
34
S504TRW Marking: W04
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
21
94 9278
95 10831
43
S504TR Marking: 54R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85043
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
S504T/S504TR/S504TRW
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Drain - source voltage V
Drain current I
Gate 1/Gate 2 - source peak current ±I
Gate 1/Gate 2 - source voltage ±V
Total power dissipation T
≤ 60 °C P
amb
Channel temperature T
Storage temperature range T
DS
D
G1/G2SM
G1/G2SM
tot
Ch
stg
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
3
R
thChA
8 V
30 mA
10 mA
6 V
200 mW
150
–55 to +150
450 K/W
°
C
°
C
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain - source
operating current
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
ID = 10 mA, V
±I
= 10 mA, V
G1S
±I
= 10 mA, V
G2S
+V
= 5 V, V
G1S
±V
= 5 V, V
G2S
VDS = V
RG1
VDS = 5 V, V
VDS = V
RG1
= V
G2S
G2S
G1S
G2S
G1S
= 5 V, V
= 4 V, ID = 20 mA V
G2S
= 0 V
G1S
= VDS = 0 ±V
= VDS = 0 ±V
= VDS = 0 +I
= VDS = 0 ±I
= 4 V, RG1 = 220 k
G2S
W
= 5 V, RG1 = 220 kW, ID = 20 mA V
(BR)DSS
(BR)G1SS
(BR)G2SS
G1SS
G2SS
I
DSO
G1S(OFF)
G2S(OFF)
15 V
7 10 V
7 10 V
7 10 14 mA
0.4 1.0 V
1.0 V
20 nA
20 nA
Remark on driving the MOSMIC and improving intermodulation behavior:
Set RG1 = 220 kW for driving MOSMIC near typical value of I
of I
will raise up to 15 mA and improved intermodulation behavior will be performed.
DSO
www.vishay.de • FaxBack +1-408-970-5600
2 (5)
= 10 mA.By setting RG1 = 150 kW typical value
DSO
Document Number 85043
Rev. 3, 20-Jan-99
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