S503T/S503TR/S503TRW
Vishay Telefunken
MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device.
Observe precautions for handling.
Applications
D
RFC
C block
V
DD
RF out
13650
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
Features
D
Easy Gate 1 switch-off with PNP switching
transistors inside PLL
D
High AGC-range with less steep slope
D
Integrated gate protection diodes
C block
AGC
C block
RF in
V
DD
D
Low noise figure
D
High gain
D
Improved cross modulation at gain reduction
D
SMD package
G2
G1
S
RG1
21
94 9279
13 579
43
S503T Marking: 503
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
2
1
13 56613 654
34
S503TRW Marking: W03
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
21
94 9278
95 10831
43
S503TR Marking: 53R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85042
Rev. 3, 20-Jan-99
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S503T/S503TR/S503TRW
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Drain - source voltage V
Drain current I
Gate 1/Gate 2 - source peak current ±I
Gate 1/Gate 2 - source voltage ±V
Total power dissipation T
≤ 60 °C P
amb
Channel temperature T
Storage temperature range T
DS
D
G1/G2SM
G1/G2SM
tot
Ch
stg
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
3
R
thChA
8 V
30 mA
10 mA
6 V
200 mW
150
–55 to +150
450 K/W
°
C
°
C
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain - source
operating current
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
ID = 10 mA, V
±I
= 10 mA, V
G1S
±I
= 10 mA, V
G2S
+V
= 5 V, V
G1S
±V
= 5 V, V
G2S
VDS = V
RG1
VDS = 5 V, V
VDS = V
RG1
= V
G2S
G2S
G1S
G2S
G1S
= 5 V, V
= 4, ID = 20 mA V
G2S
= 0 V
G1S
= VDS = 0 ±V
= VDS = 0 ±V
= VDS = 0 +I
= VDS = 0 ±I
= 4 V, RG1 = 470 k
G2S
W
= 5 V, RG1 = 470 kW, ID = 20 mA V
(BR)DSS
(BR)G1SS
(BR)G2SS
G1SS
G2SS
I
DSO
G1S(OFF)
G2S(OFF)
15 V
7 10 V
7 10 V
8 13 18 mA
0.3 1.0 V
1.0 V
20 nA
20 nA
Remark on improving intermodulation behavior:
By setting RG1 smaller than 470 kW. e.g., 390 kW typical value of I
behavior will be performed.
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will raise and improved intermodulation
DSO
Document Number 85042
Rev. 3, 20-Jan-99
Electrical AC Characteristics
g
g
S503T/S503TR/S503TRW
Vishay Telefunken
VDS = 5 V, V
= 4 V, ID = 13 mA, f = 1 MHz , T
G2S
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward transadmittance
Gate 1 input capacitance C
Feedback capacitance C
Output capacitance C
Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz G
GS = 3,3 mS, GL = 1 mS, f = 800 MHz G
AGC range VDS = 5 V, V
= 1 to 4 V, f = 800 MHz
G2S
D
y
21s
issg1
rss
oss
G
35 40 50 mS
3.2 pF
30 fF
1.5 pF
ps
ps
ps
28 dB
20 23 dB
40 dB
Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1 dB
GS = 3,3 mS, GL = 1 mS, f = 800 MHz F 1.3 dB
Dimensions of S503T in mm
96 12240
Document Number 85042
Rev. 3, 20-Jan-99
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S503T/S503TR/S503TRW
Vishay Telefunken
Dimensions of S503TR in mm
Dimensions of S503TRW in mm
96 12239
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96 12238
Document Number 85042
Rev. 3, 20-Jan-99
S503T/S503TR/S503TRW
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 85042
Rev. 3, 20-Jan-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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