VISHAY S413D Datasheet
Vishay Telefunken
Fast Soft Recovery Rectifier
Features
D
Hermetically sealed glass envelope
D
Glass passivated
D
Low reverse current
D
Miniature axial leaded
Applications
TV and monitor
Electronic ballast
SMPS
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage=Repetitive peak reverse
voltage
Peak forward surge current tp=8.3ms, half–sinewave I
Average forward current T
Junction and storage temperature range Tj=T
= 45°C, l = 10 mm I
amb
VR=V
FSM
FAV
95 10526
RRM
–55...+175°C
stg
S413D
50 V
30 A
1.25 A
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient lead length l = 10mm, TL = constant R
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A V
Reverse current VR=V
Reverse breakdown voltage IR=100mA V
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
Document Number 86055
Rev. 2, 24-Jun-98
VR=V
RRM
, Tj=150°C I
RRM
(BR)R
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thJA
F
I
R
R
50 V
rr
60 K/W
1.2 V
5
m
150
150 ns
m
A
A
1 (4)
S413D
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
10
Tj=175°C
1
Tj=25°C
0.1
0.01
F
I – Forward Current ( A )
0.001
0 0.5 1.0 1.5 2.0 2.5 3.0
VF – Forward Voltage ( V )15946
Figure 1. Forward Current vs. Forward Voltage
1.6
1.4
1.2
1.0
0.8
0.6
R
=110K/W
0.4
0.2
FAV
I – Average Forward Current ( A )
0
thJA
PCB: d=25mm
0 20 40 60 80 100 120 140 160 180
T
– Ambient Temperature ( °C )15947
amb
VR=V
RRM
half sinewave
R
=60K/W
thJA
l=10mm
1000
VR = V
RRM
m
100
10
R
I – Reverse Current ( A )
1
25 50 75 100 125 150 175
Tj – Junction Temperature ( °C )15949
Figure 4. Reverse Current vs. Junction Temperature
f=1MHz
20
10
D
C – Diode Capacitance ( pF )
0
0.1 1.0 10.0 100.0
VR – Reverse Voltage ( V )15950
Figure 2. Average Forward Current vs.
Ambient Temperature
30
VR = V
25
20
15
10
5
R
P – Reverse Power Dissipation ( mW )
0
25 50 75 100 125 150 175
R
60K/W
150K/W
Tj – Junction Temperature ( °C )15948
thJA
=
Figure 3. Max. Reverse Power Dissipation vs.
Junction Temperature
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2 (4)
Figure 5. Diode Capacitance vs. Reverse Voltage
RRM
Document Number 86055
Rev. 2, 24-Jun-98
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