VISHAY S350P Datasheet
Silicon NPN Phototransistor
Description
S350P is a high sensitive silicon NPN epitaxial planar
phototransistor in a miniature plastic case with flat window.
With a lead center–to–center spacing of 2.54mm and
a package width of 2.4mm the devices are easily
stackable on PC boards and assembled to arrays of
unlimited size.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters with
Features
D
High radiant sensitivity
D
Miniature T–¾ flat plastic package with IR filter
D
Very wide angle of half sensitivity ϕ = ± 40
D
Suitable for near infrared radiation
D
Suitable for 0.1” (2.54 mm) center–to–center
spacing
l
> 850nm.
p
°
S350P
Vishay Telefunken
94 8640
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage V
Emitter Collector Voltage V
Collector Current I
Peak Collector Current
Total Power Dissipation
Junction Temperature T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
tp/T = 0.5, tp x 10 ms
T
x 55 °C
amb
t x 3 s
CEO
ECO
C
I
CM
P
tot
stg
T
sd
thJA
32 V
5 V
50 mA
100 mA
100 mW
j
100
–55...+100
260
450 K/W
°
C
°
C
°
C
Document Number 81543
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
S350P
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector Emitter Breakdown
Voltage
Collector Dark Current VCE = 20 V, E = 0 I
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E=0 C
Collector Light Current Ee = 1 mW/cm2,
Angle of Half Sensitivity ϕ ±40 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time VS = 5 V, IC = 5 mA,
Turn–Off Time VS = 5 V, IC = 5 mA,
Cut–Off Frequency VS = 5 V, IC = 5 mA,
IC = 1 mA V
l
= 950 nm, VCE = 5 V
Ee = 1 mW/cm2,
l
= 950 nm, IC = 0.1 mA
RL = 100
RL = 100
R
= 100
L
W
W
W
(BR)CE
O
CEO
CEO
I
ca
l
p
l
0.5
V
CEsat
t
on
t
off
f
c
32 V
2 200 nA
6 pF
0.2 1 mA
925 nm
860...990 nm
0.3 V
6
5
110 kHz
m
s
m
s
Typical Characteristics (T
125
100
75
50
25
tot
P – Total Power Dissipation ( mW )
0
020406080
T
94 8308
Figure 1. Total Power Dissipation vs.
– Ambient Temperature ( °C )
amb
Ambient Temperature
= 25_C unless otherwise specified)
amb
4
10
3
10
VCE=20V
40 60 80
T
– Ambient Temperature ( °C )
amb
CEO
I – Collector Dark Current ( nA )
94 8260
2
10
1
10
0
10
20
R
thJA
100
Figure 2. Collector Dark Current vs. Ambient Temperature
100
www.vishay.de • FaxBack +1-408-970-5600
2 (5) Rev. 2, 20-May-99
Document Number 81543
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