VISHAY S268P Datasheet
Silicon PIN Photodiode Array
Description
S268P is a silicon PIN photodiode array in a inline configuration.
Three single photodiode chips with a common cathode
are mounted in a waterclear 8 pin dual in line package.
Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm
Features
D
Three photodiodes with common cathode
D
Fast response times
D
Small junction capacitance
D
High photo sensitivity
D
Large radiant sensitive area (A = 3 x 7.5 mm2)
D
Wide angle of half sensitivity ϕ = ± 65
D
Suitable for visible and near infrared radiation
2
.
°
S268P
Vishay Telefunken
94 8684
Applications
High speed and high sensitive PIN photodiode array for industrial applications, measuring and control
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation
Junction Temperature T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
T
x 25 °C
amb
t x 3 s, mounted on
plated, printed board
P
T
R
V
j
stg
sd
thJA
60 V
215 mW
100
–55...+100
260
350 K/W
°
C
°
C
°
C
Document Number 81538
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
S268P
g
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Breakdown Voltage IR = 100 mA, E = 0 V
Reverse Dark Current VR = 10 V, E = 0 I
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C
VR = 3 V, f = 1 MHz, E = 0 C
Open Circuit Voltage Ee = 1 mW/cm
Temp. Coefficient of V
o
Ee = 1 mW/cm
2
2
Short Circuit Current EA = 1 klx I
Ee = 1 mW/cm2, l = 950 nm I
Temp. Coefficient of I
k
EA = 1 mW/cm2,
l
= 950 nm
Reverse Light Current EA = 1 klx, VR = 5 V I
Ee = 1 mW/cm2,
l
= 950 nm, V
= 5 V
R
TK
TK
(BR)
ro
D
D
V
o
k
k
ra
I
ra
Reverse Light Current Ratio of
Two Diodes
Angle of Half Sensitivity ϕ ±65 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
l
p
l
0.5
Noise Equivalent Power VR = 10 V, l = 950 nm NEP 4x10
Rise Time VR = 10 V, RL = 1 kW,
l
= 820 nm
Fall Time VR = 10 V, RL = 1 kW,
l
= 820 nm
t
r
t
f
60 V
2 30 nA
70 pF
25 40 pF
350 mV
Vo
–2.6 mV/K
70
47
Ik
0.1 %/K
75
40 50
900 nm
600...1050 nm
–14
100 ns
100 ns
m
m
m
m
1:1.2
W/√ Hz
A
A
A
A
Typical Characteristics (T
1000
100
10
ro
I – Reverse Dark Current ( nA )
1
20 40 60 80
T
94 8403
Figure 1. Reverse Dark Current vs. Ambient Temperature
www.vishay.de • FaxBack +1-408-970-5600
2 (5) Rev. 2, 20-May-99
– Ambient Temperature ( °C )
amb
VR=10V
= 25_C unless otherwise specified)
amb
1.4
VR=5V
l
=950nm
– Ambient Temperature ( °C )
amb
Ambient Temperature
100
1.2
1.0
0.8
ra rel
I – Relative Reverse Light Current
0.6
020406080
94 8416
Figure 2. Relative Reverse Light Current vs.
T
100
Document Number 81538
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