VISHAY S153P Datasheet
Silicon PIN Photodiode
Description
S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package.
Due to its flat, waterclear glass window the device is
sensitive to visible and near infrared radiation.
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle.
Features
D
High photo sensitivity
D
Large radiant sensitive area A=7.5 mm
D
Fast response times
D
Small junction capacitance
D
For photodiode and photovoltaic operation
D
Hermetically sealed case
D
Wide angle of half sensitivity ϕ = ± 55
D
Suitable for visible and near infrared radiation
D
Suitable to couple with glass fiber
2
°
S153P
Vishay Telefunken
94 8482
Applications
Applications requiring high speed and high sensitive PIN photodiodes in hermetically sealed packages.
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation
Junction Temperature T
Operating Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
T
x 50 °C
amb
t x 5 s
P
T
R
V
j
amb
sd
thJA
50 V
300 mW
125
–55...+125
260
250 K/W
°
C
°
C
°
C
Document Number 81535
Rev. 2, 20-May-99
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1 (5)
S153P
g
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Breakdown Voltage IR = 100 mA, E = 0 V
Reverse Dark Current VR = 10 V, E = 0 I
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C
VR = 3 V, f = 1 MHz, E = 0 C
Open Circuit Voltage EA = 1 klx V
Temp. Coefficient of V
o
EA = 1 klx TK
Short Circuit Current EA = 1 klx I
Ee = 1 mW/cm2,
l
= 950 nm
Temp. Coefficient of I
k
EA = 1 klx TK
Reverse Light Current EA = 1 klx, VR = 5 V I
Ee = 1 mW/cm2,
l
= 950 nm, V
= 5 V
R
(BR)
ro
D
D
o
k
I
k
ra
I
ra
Absolute Spectral Sensitivity VR = 5 V, l = 900 nm s(l) 0.6 A/W
Angle of Half Sensitivity ϕ ±55 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
l
p
l
0.5
Noise Equivalent Power VR = 10 V, l = 950 nm NEP 4.2x10
Rise Time VR = 10 V, RL = 1 kW,
l
= 820 nm
Fall Time VR = 10 V, RL = 1 kW,
l
= 820 nm
t
r
t
f
50 V
2 30 nA
75 pF
25 40 pF
350 mV
Vo
–2.6 mV/K
80
47
Ik
0.18 %/K
85
40 50
900 nm
600...1050 nm
–14
100 ns
100 ns
m
m
m
m
W/√ Hz
A
A
A
A
Typical Characteristics (T
5
10
4
10
3
10
2
10
1
10
ro
I – Reverse Dark Current ( nA )
0
10
Figure 1. Reverse Dark Current vs. Ambient Temperature
www.vishay.de • FaxBack +1-408-970-5600
2 (5) Rev. 2, 20-May-99
40 60 80
T
– Ambient Temperature ( °C )94 8463
amb
VR=10V
10020
= 25_C unless otherwise specified)
amb
1.5
1.4
VR=5V
l
=950nm
T
– Ambient Temperature ( °C )94 8464
amb
Ambient Temperature
120
1.3
1.2
1.1
1.0
0.9
ra rel
I – Relative Reverse Light Current
0.8
020406080
Figure 2. Relative Reverse Light Current vs.
120
100
Document Number 81535
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