Vishay MURD620CTPBF Data Sheet

D-PAK (TO-252AA)
VS-MURD620CTPbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt
Anode Anode
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
V
R
V
at I
F
F
t
typ. See Recovery table
rr
max. 175 °C
T
J
Diode variation Common cathode
Base
common
cathode
4
2
Common
cathode
13
2 x 3 A
200 V
1.0 V
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
DESCRIPTION/APPLICATIONS
VS-MURD620CTPbF is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
Average rectified forward current per device I
Peak repetitive forward current per diode I
Operating junction and storage temperatures T
F(AV)
FSM
, T
J
RRM
FM
Total device, rated VR, TC = 146 °C 6
Rated VR, square wave, 20 kHz, TC = 146 °C 6
Stg
200 V
50
- 65 to 175 °C
ANon-repetitive peak surge current I
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
,
V
BR
V
R
IR = 100 μA 200 - -
R
IF = 3 A - - 1.0
I
= 3 A, TJ = 125 °C - - 0.96
F
T
S
F
I
= 6 A - - 1.2
F
I
= 6 A, TJ = 125 °C - - 1.13
F
VR = VR rated - - 5
T
= 125 °C, VR = VR rated - - 250
J
VR = 200 V - 12 - pF
Measured lead to lead 5 mm from package body - 8.0 - nH
V
μA
Document Number: 94084 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 13-Jan-11 DiodesAmericas@vishay.com
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VS-MURD620CTPbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 0.5 A, IR = 1.0 A, I
I
F
T
= 25 °C
J
= 125 °C - 26 -
T
J
TJ = 25 °C - 3.1 -
T
= 125 °C - 4.6 -
J
TJ = 25 °C - 30 -
rr
T
= 125 °C - 60 -
J
= 0.25 A - - 25
REC
-19-
= 3 A
I
F
dI
/dt = 200 A/μs
F
V
= 160 V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range
Thermal resistance, junction to case per leg
Thermal resistance, junction to ambient per leg
Thermal resistance, case to heatsink
Weight
Mounting torque
Marking device Case style D-PAK MURD620CT
, T
T
J
Stg
R
--9.0
thJC
R
thJA
R
thCS
Mounting surface, flat, smooth and greased
- 65 - 175 °C
--80
---
-0.3- g
-0.01- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
ns
A
nC
°C/W
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0.01
0.1
1
10
100
0 100 150
VR - Reverse Voltage (V)
I
R
- Reverse Current (µA)
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
20050
0.001
100
1 10 100 1000
10
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
1
Single pulse
(thermal resistance)
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
VS-MURD620CTPbF
100
10
1
0.1
- Instantaneous Forward Current (A)
F
I
0 0.4 0.8
TJ = 175 °C
= 150 °C
T
J
= 25 °C
T
J
0.2 0.6 1.0 1.4
1.2
Ultrafast Rectifier,
2 x 3 A FRED Pt
1.6
®
Vishay Semiconductors
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
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Fig. 4 - Maximum Thermal Impedance Z
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thJC
Characteristics
VS-MURD620CTPbF
01
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
160
170
180
See note (1)
150
DC
140
130
23
Square wave (D = 0.50) Rated V
R
applied
4
5
120
02
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50
DC
13
1.0
2.0
4.5
3.0
4.0
RMS limit
4
5
3.5
2.5
1.5
0.5
Vishay Semiconductors
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Ultrafast Rectifier, 2 x 3 A FRED Pt
®
50
40
30
(ns)
rr
t
20
10
Fig. 7 - Typical Reverse Recovery Time vs. dI
140
120
100
80
(nC)
rr
60
Q
40
VR = 30 V
= 125 °C
T
J
= 25 °C
T
J
IF = 3 A
= 6 A
I
F
100 1000
dIF/dt (A/µs)
F
VR = 30 V
= 125 °C
T
J
= 25 °C
T
J
IF = 6 A
= 3 A
I
F
/dt
Note
(1)
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Fig. 6 - Forward Power Loss Characteristics
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
REV
REV
x VFM at (I
F(AV)
) x R
;
thJC
/D) (see fig. 6);
F(AV)
20
0
100 1000
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
R
/dt
F
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Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dIF/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured from zero crossing point of negative going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
trr x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-MURD620CTPbF
Ultrafast Rectifier,
2 x 3 A FRED Pt
= 200 V
V
R
L = 70 μH
dIF/dt adjust
Fig. 9 - Reverse Recovery Parameter Test Circuit
G
®
0.01 Ω
D.U.T.
D
IRFP250
S
Vishay Semiconductors
Document Number: 94084 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 13-Jan-11 DiodesAmericas@vishay.com
Fig. 10 - Reverse Recovery Waveform and Definitions
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VS-MURD620CTPbF
2
- Ultrafast MUR series
1
- Vishay Semiconductors product
3
- D = D-PAK
4
- Current rating (6 = 6 A)
5
- Voltage rating (20 = 200 V)
6
- CT = Center tap (dual)
7
- Tape and reel suffix
- PbF = Lead (Pb)-free
8
TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented)
Device code
51 32 4 6 7 8
MURVS- D 6 20 CT TRL PbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt
®
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95016
Part marking information www.vishay.com/doc?95059
Packaging information www.vishay.com/doc?95033
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94084 6 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 13-Jan-11
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
Outline Dimensions
Vishay High Power Products
Ø 2
(2) L5
b2
SYMBOL
(5)
(3)
3
A
L3 (3)
D (5)
b
0.010
Lead tip
0.010
B
L4
M
M
CAB
Detail “C”
CAB
Rotated 90 °CW
Ø 1
Detail “C”
Scale: 20:1
Gauge
plane
L2
E
b3
4
1
2
e
2 x
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
C
A
c2
A
Seating plane
Ø
c
(L1)
C
C
L
D1
H
3241
A
A1
NOTES SYMBOL
E1
0.488 (12.40)
0.409 (10.40)
0.06
(1.524)
0.093 (2.38)
0.085 (2.18)
H
(7)
C
Seating
plane
MILLIMETERS INCHES
MIN.
Pad layout
0.265 MIN.
(6.74)
0.245 (6.23)
0.089 (2.28)
NOTES
A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC
A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410
b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070
b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.
b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC
c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3
c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040
D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2
D1 5.21 - 0.205 - 3 Ø 10° 10°
E 6.35 6.73 0.250 0.265 5 Ø1 15° 15°
E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension uncontrolled in L5
(3)
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4)
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5)
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
(6)
Dimension b1 and c1 applied to base metal only
(7)
Datum A and B to be determined at datum plane H
(8)
Outline conforms to JEDEC outline TO-252AA
MIN.
MIN.
Document Number: 95016 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 04-Nov-08 For technical questions concerning module products, contact: ind-modules@vishay.com
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