Vishay MURD620CTPBF Data Sheet

D-PAK (TO-252AA)

VS-MURD620CTPbF

Vishay Semiconductors

Ultrafast Rectifier, 2 x 3 A FRED Pt

Anode Anode

PRODUCT SUMMARY

Package D-PAK (TO-252AA)

I

F(AV)

V

R

V

at I

F

F

t

typ. See Recovery table

rr

max. 175 °C

T

J

Diode variation Common cathode

Base

common

cathode

4

2

Common

cathode

13

2 x 3 A

200 V

1.0 V

®

FEATURES

• Ultrafast recovery time

• Low forward voltage drop

• Low leakage current

• 175 °C operating junction temperature

• Compliant to RoHS Directive 2002/95/EC

• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C

DESCRIPTION/APPLICATIONS

VS-MURD620CTPbF is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Peak repetitive reverse voltage V

Average rectified forward current per device I

Peak repetitive forward current per diode I

Operating junction and storage temperatures T

F(AV)

FSM

, T

J

RRM

FM

Total device, rated VR, TC = 146 °C 6

Rated VR, square wave, 20 kHz, TC = 146 °C 6

Stg

200 V

50

- 65 to 175 °C

ANon-repetitive peak surge current I

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

,

V

BR

V

R

IR = 100 μA 200 - -

R

IF = 3 A - - 1.0

I

= 3 A, TJ = 125 °C - - 0.96

F

T

S

F

I

= 6 A - - 1.2

F

I

= 6 A, TJ = 125 °C - - 1.13

F

VR = VR rated - - 5

T

= 125 °C, VR = VR rated - - 250

J

VR = 200 V - 12 - pF

Measured lead to lead 5 mm from package body - 8.0 - nH

V

μA

Document Number: 94084 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 13-Jan-11 [e-mail]

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VS-MURD620CTPbF

Vishay Semiconductors

Ultrafast Rectifier,
2 x 3 A FRED Pt

®

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

= 0.5 A, IR = 1.0 A, I

I

F

T

= 25 °C

J

= 125 °C - 26 -

T

J

TJ = 25 °C - 3.1 -

T

= 125 °C - 4.6 -

J

TJ = 25 °C - 30 -

rr

T

= 125 °C - 60 -

J

= 0.25 A - - 25

REC

-19-

= 3 A

I

F

dI

/dt = 200 A/μs

F

V

= 160 V

R

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and
storage temperature range

Thermal resistance,
junction to case per leg

Thermal resistance,
junction to ambient per leg

Thermal resistance,
case to heatsink

Weight

Mounting torque

Marking device Case style D-PAK MURD620CT

, T

T

J

Stg

R

--9.0

thJC

R

thJA

R

thCS

Mounting surface, flat, smooth and
greased

- 65 - 175 °C

--80

---

-0.3- g

-0.01- oz.

6.0

(5.0)

-

12

(10)

kgf · cm

(lbf · in)

ns

A

nC

°C/W

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0.01

0.1

1

10

100

0 100 150

VR - Reverse Voltage (V)

I

R

- Reverse Current (µA)

TJ = 175 °C

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 25 °C

20050

0.001

100

1 10 100 1000

10

VR - Reverse Voltage (V)

C

T

- Junction Capacitance (pF)

TJ = 25 °C

0.01

0.1

10

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

.

.

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

1

Single pulse

(thermal resistance)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

VS-MURD620CTPbF

100

10

1

0.1

- Instantaneous Forward Current (A)

F

I

0 0.4 0.8

TJ = 175 °C

= 150 °C

T

J

= 25 °C

T

J

0.2 0.6 1.0 1.4

1.2

Ultrafast Rectifier,

2 x 3 A FRED Pt

1.6

®

Vishay Semiconductors

VF - Forward Voltage Drop (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

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Revision: 13-Jan-11 [e-mail]

Fig. 4 - Maximum Thermal Impedance Z

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thJC

Characteristics

VS-MURD620CTPbF

01

Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

160

170

180

See note (1)

150

DC

140

130

23

Square wave (D = 0.50)
Rated V

R

applied

4

5

120

02

Average Power Loss (W)

I

F(AV)

- Average Forward Current (A)

0

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50

DC

13

1.0

2.0

4.5

3.0

4.0

RMS limit

4

5

3.5

2.5

1.5

0.5

Vishay Semiconductors

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

Ultrafast Rectifier,
2 x 3 A FRED Pt

®

50

40

30

(ns)

rr

t

20

10

Fig. 7 - Typical Reverse Recovery Time vs. dI

140

120

100

80

(nC)

rr

60

Q

40

VR = 30 V

= 125 °C

T

J

= 25 °C

T

J

IF = 3 A

= 6 A

I

F

100 1000

dIF/dt (A/µs)

F

VR = 30 V

= 125 °C

T

J

= 25 °C

T

J

IF = 6 A

= 3 A

I

F

/dt

Note

(1)

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Fig. 6 - Forward Power Loss Characteristics

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

REV

x VFM at (I

F(AV)

) x R

;

thJC

/D) (see fig. 6);

F(AV)

20

0

100 1000

dIF/dt (A/µs)

Fig. 8 - Typical Stored Charge vs. dI

R

/dt

F

, [e-mail], [e-mail] Revision: 13-Jan-11

Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

VS-MURD620CTPbF

Ultrafast Rectifier,

2 x 3 A FRED Pt

= 200 V

V

R

L = 70 μH

dIF/dt
adjust

Fig. 9 - Reverse Recovery Parameter Test Circuit

G

®

0.01 Ω

D.U.T.

D

IRFP250

S

Vishay Semiconductors

Document Number: 94084 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 13-Jan-11 [e-mail]

Fig. 10 - Reverse Recovery Waveform and Definitions

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VS-MURD620CTPbF

2

- Ultrafast MUR series

1

- Vishay Semiconductors product

3

- D = D-PAK

4

- Current rating (6 = 6 A)

5

- Voltage rating (20 = 200 V)

6

- CT = Center tap (dual)

7

- Tape and reel suffix

- PbF = Lead (Pb)-free

8

TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)

Device code

51 32 4 6 7 8

MURVS- D 6 20 CT TRL PbF

Vishay Semiconductors

Ultrafast Rectifier,
2 x 3 A FRED Pt

®

ORDERING INFORMATION TABLE

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95016

Part marking information www.vishay.com/doc?95059

Packaging information www.vishay.com/doc?95033

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D-PAK (TO-252AA)

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay High Power Products

Ø 2

(2) L5

b2

SYMBOL

(5)

(3)

3

A

L3 (3)

D (5)

b

0.010

Lead tip

0.010

B

L4

M

M

CAB

Detail “C”

CAB

Rotated 90 °CW

Ø 1

Detail “C”

Scale: 20:1

Gauge

plane

L2

E

b3

4

1

2

e

2 x

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

C

A

c2

A

Seating
plane

Ø

c

(L1)

C

C

L

D1

H

3241

A

A1

NOTES SYMBOL

E1

0.488 (12.40)

0.409 (10.40)

0.06

(1.524)

0.093 (2.38)

0.085 (2.18)

H

(7)

C

Seating

plane

MILLIMETERS INCHES

MIN.

Pad layout

0.265
MIN.

(6.74)

0.245
(6.23)

0.089
(2.28)

NOTES

A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC

A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410

b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070

b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.

b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC

c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3

c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040

D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2

D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10°

E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15°

E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension uncontrolled in L5

(3)

Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad

(4)

Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip

(5)

Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(6)

Dimension b1 and c1 applied to base metal only

(7)

Datum A and B to be determined at datum plane H

(8)

Outline conforms to JEDEC outline TO-252AA

MIN.

MIN.

Document Number: 95016 For technical questions concerning discrete products, contact: [e-mail]
Revision: 04-Nov-08 For technical questions concerning module products, contact: [e-mail]

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