Vishay MURD620CTPBF Data Sheet
D-PAK (TO-252AA)
VS-MURD620CTPbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt
Anode Anode
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
V
R
V
at I
F
F
t
typ. See Recovery table
rr
max. 175 °C
T
J
Diode variation Common cathode
Base
common
cathode
4
2
Common
cathode
13
2 x 3 A
200 V
1.0 V
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION/APPLICATIONS
VS-MURD620CTPbF is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
Average rectified forward current per device I
Peak repetitive forward current per diode I
Operating junction and storage temperatures T
F(AV)
FSM
, T
J
RRM
FM
Total device, rated VR, TC = 146 °C 6
Rated VR, square wave, 20 kHz, TC = 146 °C 6
Stg
200 V
50
- 65 to 175 °C
ANon-repetitive peak surge current I
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
,
V
BR
V
R
IR = 100 μA 200 - -
R
IF = 3 A - - 1.0
I
= 3 A, TJ = 125 °C - - 0.96
F
T
S
F
I
= 6 A - - 1.2
F
I
= 6 A, TJ = 125 °C - - 1.13
F
VR = VR rated - - 5
T
= 125 °C, VR = VR rated - - 250
J
VR = 200 V - 12 - pF
Measured lead to lead 5 mm from package body - 8.0 - nH
V
μA
Document Number: 94084 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 13-Jan-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
VS-MURD620CTPbF
Vishay Semiconductors
Ultrafast Rectifier,
2 x 3 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 0.5 A, IR = 1.0 A, I
I
F
T
= 25 °C
J
= 125 °C - 26 -
T
J
TJ = 25 °C - 3.1 -
T
= 125 °C - 4.6 -
J
TJ = 25 °C - 30 -
rr
T
= 125 °C - 60 -
J
= 0.25 A - - 25
REC
-19-
= 3 A
I
F
dI
/dt = 200 A/μs
F
V
= 160 V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style D-PAK MURD620CT
, T
T
J
Stg
R
--9.0
thJC
R
thJA
R
thCS
Mounting surface, flat, smooth and
greased
- 65 - 175 °C
--80
---
-0.3- g
-0.01- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
ns
A
nC
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94084
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 13-Jan-11
0.01
0.1
1
10
100
0 100 150
VR - Reverse Voltage (V)
I
R
- Reverse Current (µA)
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
20050
0.001
100
1 10 100 1000
10
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
VS-MURD620CTPbF
100
10
1
0.1
- Instantaneous Forward Current (A)
F
I
0 0.4 0.8
TJ = 175 °C
= 150 °C
T
J
= 25 °C
T
J
0.2 0.6 1.0 1.4
1.2
Ultrafast Rectifier,
2 x 3 A FRED Pt
1.6
®
Vishay Semiconductors
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94084 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 13-Jan-11 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
thJC
Characteristics
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