Vishay MURB820, MUR820, MURB820-1 Data Sheet

Ultrafast Rectifier

Bulletin PD-20731 rev. C 12/03

MUR820

MURB820

MURB820-1

Features

• Ultrafast Recovery Time

• Low Forward Voltage Drop

• Low Leakage Current

• 175°C Operating Junction Temperature

Description/ Applications

International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and ultra fast recovery time.
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free­wheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

t

= 25ns

rr

I

= 8Amp

F(AV)

VR = 200V

Absolute Maximum Ratings

Parameters Max Units

V

RRM

I

F(AV)

I

FSM

I

FM

TJ, T

Peak Repetitive Peak Reverse Voltage 200 V

Average Rectified Forward Current 8 A

Total Device, (Rated VR ), TC = 150°C

Non Repetitive Peak Surge Current 100

Peak Repetitive Forward Current 16

(Rated VR , Square wave, 20 KHz), TC = 150°C

Operating Junction and Storage Temperatures -65 to 175 °C

STG

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MUR820

TO-220AC

Case Styles

MURB820

D2PAK

MURB820-1

TO-262

1

MUR820, MURB820, MURB820-1

Bulletin PD-20731 rev. C 12/03

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameters Min Typ Max Units Test Conditions

VBR, VrBreakdown Voltage, 200 - - V IR = 100µA

Blocking Voltage

V

F

Forward Voltage - - 0.975 V IF = 8A

- - 0.895 V IF = 8A, TJ = 150°C

I

R

Reverse Leakage Current - - 5 µA VR = VR Rated

- - 250 µA TJ = 150°C, VR = VR Rated

C

T

L

S

Junction Capacitance - 25 - pF VR = 200V

Series Inductance - 8.0 - nH .

Measured lead to lead 5mm from package body

Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)

Parameters Min Typ Max Units Test Conditions

t

rr

I

RRM

Q

rr

Reverse Recovery Time --35 ns IF = 1.0A, diF/dt = 50A/µs, VR = 30V

--25 IF = 0.5A, IR = 1.0A, I

-20- TJ = 25°C

34 TJ = 125°C

= 0.25A

REC

IF = 8A

VR = 160V

diF /dt = 200A/µs

Peak Recovery Current - 1.7 - A TJ = 25°C

- 4.2 - TJ = 125°C

Reverse Recovery Charge - 23 - nC TJ = 25°C

-75- TJ = 125°C

Thermal - Mechanical Characteristics

Parameters Min Typ Max Units

T

J

T

Stg

R

thJC

R

thJA

R

thCS

Wt Weight - 2.0 - g

c Mounting Surface, Flat, Smooth and Greased

2

Max. Junction Temperature Range - - - 65 to 175 °C

Max. Storage Temperature Range - - - 65 to 175

Thermal Resistance, Junction to Case - - 3.0 °C/ W

Thermal Resistance, Junction to Ambient - - 50

c

Thermal Resistance, Case to Heatsink - 0.5 -

- 0.07 - (oz)

Mounting Torque 6.0 - 12 Kg-cm

5.0 - 10 lbf.in

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MUR820, MURB820, MURB820-1

Bulletin PD-20731 rev. C 12/03

100

10

(A)

F

1

Instantaneous Forward Current - I

T = 175˚C

J

T = 150˚C

J

T = 25˚C

J

100

T = 175˚C

J

(µA)

R

10

1

150˚C
125˚C

100˚C

0.1

Reverse Current - I

0.01

0.001
0 50 100 150 200 250

25˚C

Reverse Voltage - VR (V)

Fig. 2 - Typical Values Of Reverse Current

Vs. Reverse Voltage

1000

(pF)

T

T = 25˚C

J

100

0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

Forward Voltage Drop - VFM (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics

10

1

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

(°C/W)

thJC

0.1

Single Pulse

Thermal Impedance Z

0.01

0.00001 0.0001 0.001 0.01 0.1 1

(Thermal Resistance)

t1, Rectangular Pulse Duration (Seconds)

Fig. 4 - Max. Thermal Impedance Z

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Junction Capacitance - C

10

1 10 100 1000

Reverse Voltage - VR (V)

Fig. 3 - Typical Junction Capacitance

Vs. Reverse Voltage

P

DM

t

1

t

2

Notes:

1. Duty factor D = t1/ t2

2. Peak Tj = Pdm x ZthJC + Tc

Characteristics

thJC

3

MUR820, MURB820, MURB820-1

0

0

Bulletin PD-20731 rev. C 12/03

180

170

160

150

Square wave (D = 0.50)
Rated Vr applied

DC

140

Allowable Case Temperature (°C)

see note (2)

130

036912

Average Forward Current - IF

(AV)

Fig. 5 - Max. Allowable Case Temperature

Vs. Average Forward Current

50

IF = 16A
IF = 8 A

40

IF = 4 A

(A)

10

8

6

D = 0.01
D = 0.02
D = 0.05

4

RMS Limit

2

Average Power Loss ( Watts )

0

036912

DC

Average Forward Current - IF

D = 0.10
D = 0.20
D = 0.50

(A)

(AV)

Fig. 6 - Forward Power Loss Characteristics

200

V = 160V

R

T = 125˚C

J

T = 25˚C

J

160

IF = 16A
IF = 8 A
IF = 4 A

120

30

trr ( nC )

20

V = 160V

R

T = 125˚C

J

T = 25˚C

J

10

100 100

di

F

(2) Formula used: TC = TJ - (Pd + Pd

Pd = Forward Power Loss = I

Pd

= Inverse Power Loss = VR1 x IR (1 - D); IR @ V

REV

F(AV)

4

/dt (A/µs )

) x R

REV

x VFM @ (I

;

thJC

/ D) (see Fig. 6);

F(AV)

/dt

F

= rated V

R1

Qrr ( nC )

80

40

0

100 100

di F /dt (A/µs )

Fig. 8 - Typical Stored Charge vs. di

R

/dtFig. 7 - Typical Reverse Recovery vs. di

F

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MUR820, MURB820, MURB820-1

Reverse Recovery Circuit

V = 200V

R

0.01

Ω

L = 70µH

D.U.T.

Bulletin PD-20731 rev. C 12/03

di F /dt

dif/dt
ADJUST

G

Fig. 9- Reverse Recovery Parameter Test Circuit

I

F

t

a

0

1

di F /dt

di /dt

f

1. diF/dt - Rate of change of current through zero
crossing

2. I

- Peak reverse recovery current

RRM

3. t

- Reverse recovery time measured from zero

rr

crossing point of negative going IF to point where
a line passing through 0.75 I
extrapolated to zero current

RRM

and 0.50 I

RRM

3

2

D

IRFP250

S

t

rr

t

b

Q

I

RRM

0.5

di(rec)M/dt

0.75

I

RRM

4. Qrr - Area under curve defined by t
and I

RRM

Q

rr

5. di

/ dt - Peak rate of change of

(rec) M

current during t b portion of t

I

=

rr

RRM

t rr x I

4

5

rr

RRM

2

rr

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Fig. 10 - Reverse Recovery Waveform and Definitions

5

MUR820, MURB820, MURB820-1

e

Bulletin PD-20731 rev. C 12/03

Outline Table

10.54 (0.41)

15.24 (0.60)

14.84 (0.58)

14.09 (0.55)

13.47 (0.53)

4.57 (0.18)

4.32 (0.17)

MAX.

1

1.40 (0.05)

1.15 (0.04)

1

TERM 2

3

2.04 (0.080) MAX.

0.94 (0.04)

0.69 (0.03)

3

5.08 (0.20) REF.

3.78 (0.15)

3.54 (0.14)

2.92 (0.11)

2.54 (0.10)

Modified JEDEC outline TO-262

Dimensions in millimeters and (inches)

DIA.

3.96 (0.16)

3.55 (0.14)

0.61 (0.02) MAX.

6.48 (0.25)

6.23 (0.24)

1.32 (0.05)

1.22 (0.05)

2°

0.10 (0.004)

Base

Cathode

1

Cathode

2.89 (0.11)

2.64 (0.10)

Conforms to JEDEC Outline TO-220AC

Dimensions in millimeters and (inches)

3

Anode

2

1

N/C

6

3

Anod

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Outline Table

e

MUR820, MURB820, MURB820-1

Bulletin PD-20731 rev. C 12/03

10.16 (0.40)
REF.

1.40 (0.055)

3X

1.14 (0.045)

93°

8.89 (0.35)

13

2

2.61 (0.10)

2.32 (0.09)

REF.

0.93 (0.37)

2X

0.69 (0.27)

5.08 (0.20) REF.

15.49 (0.61)

14.73 (0.58)

Conforms to JEDEC Outline D2PAK

Dimensions in millimeters and (inches)

Ordering Information Table

Device Code

6.47 (0.25)

6.18 (0.24)

4.57 (0.18)

4.32 (0.17)

0.61 (0.02) MAX.

4.69 (0.18)

4.20 (0.16)

1.32 (0.05)

1.22 (0.05)

5.28 (0.21)

4.78 (0.19)

0.55 (0.02)

0.46 (0.02)

MINIMUM R EC OMMENDE D FOOT PRIN T

8.89 (0.35)

3.81 (0.15)

2.08 (0.08)

2X

11.43 (0.45)

17.78 (0.70)

2.54 (0.10)

2X

N/C

Base

Cathode

1

2

2

3

Anod

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MUR B 8 20 CT -1

524

1

3

1 - Ultrafast MUR Series

2 -B = D2Pak/ TO-262

None = TO-220AC

3 - Current Rating (8 = 8A)

4 - Voltage Rating (20 = 200V)

5 - CT = Center Tap (Dual) TO-220 /D2PAK/ TO-262

6 - "-1" = TO-262 Option

6

7

MUR820, MURB820, MURB820-1

Bulletin PD-20731 rev. C 12/03

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.

Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information. 12/03

8

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