Bulletin I27504 08/97
MT..KB SERIES
THREE PHASE AC SWITCH
Features
Package fully compatible with the industry standard INT-A-pak
power modules series
High thermal conductivity package, electrically insulated case
Outstanding number of power encapsulated components
Excellent power volume ratio
4000 V
UL E78996 approved
isolating voltage
RMS
Description
A range of extremely compact, encapsulated three phase
AC-switches offering efficient and reliable operation. They
are intended for use in general purpose and heavy duty
applications as control motor starter.
Major Ratings and Characteristics
Power Modules
50 A
90 A
100 A
Parameters 54MT.KB 94MT.KB 104MT.KB Units
I
O
@ T
C
I
@ 50Hz 390 950 1130 A
FSM
@ 60Hz 410 1000 1180 A
I2t @ 50Hz 770 4525 6380 A2s
@ 60Hz 700 4130 5830 A2s
I2√t 7700 45250 63800 A2√s
V
range 800 to 1600 V
RRM
T
range - 40 to 125 °C
STG
TJrange - 40 to 125 °C
50 90 100 A
80 80 80 °C
www.irf.com
1
54-94-104MT..KB Series
Bulletin I27504 08/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
Type number Code repetitive peak non-repetitive peak peak off-state voltage,
80 800 900 800
100 1000 1100 1000
54MT..KB 120 1200 1300 1200 20 *
140 1400 1500 1400
160 1600 1700 1600
80 800 900 800
100 1000 1100 1000
94/104MT..KB 12 0 1200 1300 1200 40 *
140 1400 1500 1400
160 1600 1700 1600
* For single AC switch
Forward Conduction
Parameter 54MT.KB 94MT.KB 104MT.KB Units Conditions
IOMaximum I
@ Case temperature 80 80 80 °C
Maximum peak, one-cycle 3 9 0 9 5 0 1130 A t = 10ms No voltage
I
TSM
forward, non-repetitive 410 1000 1180 t = 8.3ms reapplied
on state surge current 330 800 95 0 t = 10ms 100% V
2
t Maximum I2t for fusing 770 4525 6380 A2s t = 10ms No voltage TJ = TJ max.
I
2
√t Maximum I2√t for fusing 7700 45250 63800 A2√s t = 0.1 to 10ms, no voltage reapplied
I
Low level value of threshold 1.16 0.99 0.99 V (16.7% x π x I
V
T(TO)1
voltage
High level value of threshold 1.44 1.19 1.15 (I > π x I
V
T(TO)2
voltage
Low level value on-state 12.54 4.16 3.90 mΩ (16.7% x π x I
r
t1
slope resistance
High level value on-state 11.00 3.56 3.48 (I > π x I
r
t2
slope resistance
Maximum on-state voltage drop 2.68 1.55 1.53 V Ipk = 150A, TJ = 25°C
V
TM
di/dt Max. non-repetitive rate 150 A/µs T
of rise of turned on current I
Max. holding current 200 TJ = 25oC, anode supply = 6V,
I
H
Max. latching current 400 TJ = 25oC, anode supply = 6V, resistive load
I
L
output current 5 0 90 100 A For all conduction angle
RMS
, maximum V
RRM
, maximum V
RSM
, max. repetitive I
DRM
RRM /IDRM
@ TJ = 125°C
reverse voltage reverse voltage gate open circuit
VVVmA
345 840 1000 t = 8.3ms reapplied Initial
700 4130 5830 t = 8.3ms reapplied
540 3200 4510 t = 10ms 100% V
500 2920 4120 t = 8.3ms reapplied
(AV)
T
(AV)
T
= 400µs single junction
t
p
= 25oC, from 0.67 V
J
= 500mA,tr < 0.5 µs, tp > 6 µs
g
mA resistive load, gate open circuit
RRM
RRM
< I < π x I
T(AV)
), @ TJ max.
< I < π x I
(AV)
T
), @ TJ max.
DRM
), @ TJ max.
T(AV)
), @ TJ max.
(AV)
T
, I
= π x I
TM
max.
T(AV)
,
2
www.irf.com
54-94-104MT..KB Series
Bulletin I27504 08/97
Blocking
Parameter 54MT.KB 94MT.KB 104MT.KB Units Conditions
V
RMS isolation voltage 4000 V TJ = 25oC all terminal shorted
INS
dv/dt Max. critical rate of rise 500 V/µs T
of off-state voltage (*) gate open circuit
(*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 104MT160KBS90.
Triggering
Parameter 54MT.KB 94MT.KB 104MT.KB Units Conditions
PGMMax. peak gate power 10 W TJ = TJ max.
Max. average gate power 2.5
P
G(AV)
Max. peak gate current 2.5 A
I
GM
Max. peak negative 10 V
-V
GT
gate voltage
Max. required DC gate 4.0 V TJ = - 40°C Anode supply = 6V, resistive load
V
GT
voltage to trigger 2.5 T
1.7 T
Max. required DC gate 270 TJ = - 40°C Anode supply = 6V, resistive load
I
GT
current to trigger 150 mA T
80 T
Max. gate voltage 0.25 V @ TJ = TJ max., rated V
V
GD
that will not trigger
Max. gate current 6 mA
I
GD
that will not trigger
f = 50Hz, t = 1s
= TJ max., linear to 0.67 V
J
= 25°C
J
= 125°C
J
= 25°C
J
= 125°C
J
DRM
DRM
applied
,
Thermal and Mechanical Specifications
Parameter 54MT.KB 94MT.KB 104MT.KB Units Conditions
TJMax. junction operating -40 to 125 °C
temperature range
Max. storage temperature -40 to 125 °C
T
stg
range
Max. thermal resistance, 0.52 0.39 0.34 K/W DC operation per single AC switch
R
thJC
junction to case 1.05 0.77 0.69 DC operation per junction
0.56 0.40 0.36 180° Sine cond. angle per single AC switch
1.12 0.80 0.72 180° Sine cond. angle per junction
Max. thermal resistance, 0.03 K/W Per module
R
thCS
case to heatsink Mounting surface smooth, flat and greased
T Mounting to heatsink 4 to 6 Nm
torque ± 10% to terminal 3 to 4
wt Approximate weight 225 g
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
Lubricated threads.
www.irf.com
3
54-94-104MT..KB Series
Bulletin I27504 08/97
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
Devices Units
54MT.KB 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236 K/W
94MT.KB 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100
104MT.KB 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082
Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max.
o
180o120
o
90
60
Ordering Information Table
Device Code
10 4 MT 160 K B S90
when devices operate at different conduction angles than DC)
thJC
o
o
30
180
o
120
o
o
90
o
60
o
30
1 23
4
1- Current rating code: 5 = 50 A (Avg)
9 = 90 A (Avg)
10 = 100 A (Avg)
2 - AC Switch
3 - Essential part number
4 - Voltage code: Code x 10 = V
(See Voltage Ratings Table)
RRM
5 - Generation II
6 - Critical dv/dt: None = 500V/µs (Standard value)
S90 = 1000V/µs (Special selection)
5
6
NOTE: To order the Optional Hardware see Bulletin I27900
4
www.irf.com
Outline Table (with optional barriers)
54-94-104MT..KB Series
Bulletin I27504 08/97
All dimensions in millimeters (inches)
Outline Table (without optional barriers)
www.irf.com
All dimensions in millimeters (inches)
5
Optional Hardware
MT..KB Series
GATE LEADS
Ident No. Device Series Description
6443.2112.AA 51, 91, 111MT..KB 2 DX connectors with yellow and white leads
6443.2113.AA 52, 92, 112MT..KB 1 SX + 1 DX connectors with yellow and white leads
6443.2114.AA 53, 93, 113MT..KB 1 SX + 2 DX connectors with yellow and white leads
54, 94, 104MT..KB
All dimensions are in millimeters (inches)
BARRIERS
Ident No. 6444.0211.AA for all MT..KB Series
Barriers Mounting Instructions
Coat uniformly the groove on the plastic box
with a silicon adhesive. Insert the barriers into
the groove on the plastic box. Cure the silicon
adhesive according to its technical notes.
We suggest the use of DOW CORNING
Silastic 744RTV (time curing 30 min. at room
temperature).
All dimensions are in millimeters (inches)
Bulletin I27900 rev. A 12/99 1
54-94-104MT ..KB Series
Bulletin I27504 08/97
130
54MT..KB Series
120
Device Fully Turned-on
110
100
Per Single AC Switch
90
80
70
For all Conduction Angles
Maximum Allowable Case Temperature (°C)
60
0 102030405060
R M S Outp ut Current ( A)
Fig. 1 - Current Ratings Characteristic
350
54MT..KB Series
T = 125°C
300
Device Fully
Turned-on
250
J
180°
120°
90°
60°
30°
200
150
(Per Total Module)
Conduction Angle
100
Maximum Total Power Loss (W)
50
1000
T = 25°C
J
T = 125°C
100
J
10
54MT..KB Series
Ins tantaneous On-state C u rrent (A)
1
0123456
Per Junction
Instantaneous On- s tate V olt age (V)
Fig. 2 - Forward Voltage Drop Characteristics
R
0
.
1
t
h
S
K
A
/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
5
K
/
W
0
.
7
K
/
W
1
K
/
W
2
K
/
W
=
0
.
0
5
K
/
W
-
D
e
l
t
a
R
0
0102030405060
RMS Output Current (A)
0 25 50 75 100 125
Maximum Allowable Ambient Temperature ( °C)
Fig. 3 - Total Power Loss Characteristics
350
325
300
275
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Initial T = 125°C
J
@ 60 H z 0.0083 s
@ 50 H z 0.0100 s
400
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
350
300
Of Conduction May Not Be Maintained.
Rated V Reapplied
Init ial T = 125°C
No Voltage Reapplied
RRM
250
225
200
175
54MT..KB Series
Peak H alf Sine Wave On-state Current (A)
Per Junction
150
1 10 100
Number Of Equal Amplit ude Half Cycle Current Pulses (N)
250
200
54MT..KB Series
Peak Ha l f Sine Wave On-st a te Current (A)
Per Junction
150
0.01 0.1 1
Pul se Train Du ration (s )
Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current
6
www.irf.com
J
54-94-104MT ..KB Series
Bulletin I27504 08/97
130
94MT..KB Series
120
Device Fully Turned-on
110
100
90
Per Single AC Switch
80
70
60
For all Conduction Angles
Maximum Allowabl e Case Temperature (°C)
50
0 20406080100120
RMS Output Current (A)
Fig. 6 - Current Ratings Characteristic
450
94MT..KB Series
400
T = 125°C
J
350
300
250
Device Fully
Turned-on
180°
120°
90°
60°
30°
200
150
(Per Total Module)
Conduction Angle
100
Maximum Total Power Loss (W)
50
0
0102030405060708090100
RMS Output Current (A)
Fig. 8 - Total Power Loss Characteristics
1000
100
T = 25°C
J
10
Instantaneous On-state Current (A)
1
012345
T = 125°C
J
94MT..KB Series
Per Junction
Instantane ous On -state Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
R
0
t
.
h
0
S
5
0
.
1
5
K
/
W
0
.
3
K
/
W
0
.
5
K
/
W
0
.
7
K
/
W
1
K
W
/
1
.
5
K
/
W
A
K
=
/
W
0
.
0
3
K
/
W
-
D
e
l
t
a
R
0 255075100125
Maximum Allowable Ambient Temperature (°C)
750
700
650
600
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
900
800
700
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
In itial T = 125 °C
No Voltage Reapplied
Rated V Reapplied
550
500
450
400
94MT..KB Series
Peak Half S ine Wave On-sta te Current (A)
Per Junction
350
110100
Num b er Of Equal A m p litud e H al f Cyc le C u rre nt Pul ses (N)
600
500
400
94MT..KB Series
Pea k Ha lf Sine Wave On-state Current (A)
Per Junction
300
0.01 0.1 1
Pulse Trai n Duration (s)
Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current
www.irf.com
J
RRM
7
54-94-104MT ..KB Series
Bulletin I27504 08/97
130
104MT..KB Series
120
Device Fully Turned- on
110
100
Per Single AC Switch
90
80
70
For all Conduction Angles
Maximum Allowable Case Temperature (°C)
60
0 20406080100120
RMS O utput Current (A)
Fig. 11 - Current Ratings Characteristic
500
104MT..KB Series
450
T = 125°C
J
De vice Fully
400
Turned-on
350
180°
120°
90°
60°
30°
300
250
200
Conduction Angle
(Per Total Module)
150
100
Maximum Total Power Loss (W)
50
0
0 20406080100120
RMS Output Current (A)
Fig. 13 - Total Power Loss Characteristics
1000
100
T = 25°C
J
10
Instantaneous On-state Current (A)
1
012345
T = 125°C
J
104MT..KB Series
Pe r Junction
Instantaneous On-state Voltage (V)
Fig. 12 - Forward Voltage Drop Characteristics
R
t
0
h
.
S
0
A
5
0.
1
5
K
/W
0
.
3
K
/
W
0
.
5
K
/
W
0
.
7
K
/
W
1
K/
W
1
.
5
K
/
W
=
K
/
0
W
.
0
3
K
/
W
-
D
e
l
t
a
R
0 255075100125
Maximum Allo wable Ambient Temp erature (°C)
1100
1000
900
800
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Initial T = 1 2 5°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1200
1100
1000
900
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
In itial T = 125 °C
No Voltage Reapplied
Rated V Reapplied
RRM
800
700
600
500
104MT..KB Series
Peak H a lf Sin e Wave On-sta te Curren t (A)
Per Junction
400
1 10 100
Num b er Of Equa l Amplitude Ha lf C ycle C urren t P ulses (N)
700
600
104M T..K B Se ries
500
Peak H a lf Sine Wave On-state Current (A)
Per Junction
400
0.01 0.1 1
Puls e Train Dur ation (s)
Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
8
www.irf.com
J
10
1
th JC
0.1
Steady State Value
R = 1.05 K/W
thJC
R = 0.77 K/W
thJC
R = 0.69 K/W
thJC
(DC Operation)
94MT..KB Series
54-94-104MT ..KB Series
Bulletin I27504 08/97
54MT..KB Series
104MT..KB Series
0.01
Tran sien t The rm al Im pe danc e Z (K/W)
0.001
0.001 0. 01 0.1 1 10
Pe r Junction
Square Wa ve Pulse D ura tion (s)
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp > = 6 µ s
b) Recommended load line for
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µ s, tp >= 6 µs
10
Fig. 16 - Thermal Impedance Z
(a)
(b)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
Characteristics
thJC
(1) PG M = 100 W , tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
1
(4)
Inst antaneou s Gate Voltage (V)
VGD
IGD
0.1
0.001 0.01 0.1 1 10 100 1000
54/ 94/ 104MT..KB Series
Frequency Limited b y PG(AV)
(2) (1)
(3)
Ins ta n tan e ous Gate C u rre n t (A )
Fig. 17 - Gate Characteristics
www.irf.com
9
Loading...