Vishay MT..KB SERIES Data Sheet

Bulletin I27504 08/97

MT..KB SERIES

THREE PHASE AC SWITCH

Features

Package fully compatible with the industry standard INT-A-pak
power modules series

High thermal conductivity package, electrically insulated case
Outstanding number of power encapsulated components
Excellent power volume ratio
4000 V
UL E78996 approved

isolating voltage

RMS

Description

A range of extremely compact, encapsulated three phase
AC-switches offering efficient and reliable operation. They
are intended for use in general purpose and heavy duty
applications as control motor starter.

Major Ratings and Characteristics

Power Modules

50 A
90 A

100 A

Parameters 54MT.KB 94MT.KB 104MT.KB Units

I

O

@ T

C

I

@ 50Hz 390 950 1130 A

FSM

@ 60Hz 410 1000 1180 A

I2t @ 50Hz 770 4525 6380 A2s

@ 60Hz 700 4130 5830 A2s

I2√t 7700 45250 63800 A2√s
V

range 800 to 1600 V

RRM

T

range - 40 to 125 °C

STG

TJrange - 40 to 125 °C

50 90 100 A
80 80 80 °C

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54-94-104MT..KB Series

Bulletin I27504 08/97

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

Type number Code repetitive peak non-repetitive peak peak off-state voltage,

80 800 900 800

100 1000 1100 1000

54MT..KB 120 1200 1300 1200 20 *

140 1400 1500 1400
160 1600 1700 1600

80 800 900 800

100 1000 1100 1000

94/104MT..KB 12 0 1200 1300 1200 40 *

140 1400 1500 1400
160 1600 1700 1600

* For single AC switch

Forward Conduction

Parameter 54MT.KB 94MT.KB 104MT.KB Units Conditions

IOMaximum I

@ Case temperature 80 80 80 °C
Maximum peak, one-cycle 3 9 0 9 5 0 1130 A t = 10ms No voltage

I

TSM

forward, non-repetitive 410 1000 1180 t = 8.3ms reapplied
on state surge current 330 800 95 0 t = 10ms 100% V

2

t Maximum I2t for fusing 770 4525 6380 A2s t = 10ms No voltage TJ = TJ max.

I

2

√t Maximum I2√t for fusing 7700 45250 63800 A2√s t = 0.1 to 10ms, no voltage reapplied

I

Low level value of threshold 1.16 0.99 0.99 V (16.7% x π x I

V

T(TO)1

voltage
High level value of threshold 1.44 1.19 1.15 (I > π x I

V

T(TO)2

voltage
Low level value on-state 12.54 4.16 3.90 mΩ (16.7% x π x I

r

t1

slope resistance
High level value on-state 11.00 3.56 3.48 (I > π x I

r

t2

slope resistance
Maximum on-state voltage drop 2.68 1.55 1.53 V Ipk = 150A, TJ = 25°C

V

TM

di/dt Max. non-repetitive rate 150 A/µs T

of rise of turned on current I
Max. holding current 200 TJ = 25oC, anode supply = 6V,

I

H

Max. latching current 400 TJ = 25oC, anode supply = 6V, resistive load

I

L

output current 5 0 90 100 A For all conduction angle

RMS

, maximum V

RRM

, maximum V

RSM

, max. repetitive I

DRM

RRM /IDRM

@ TJ = 125°C

reverse voltage reverse voltage gate open circuit

VVVmA

345 840 1000 t = 8.3ms reapplied Initial

700 4130 5830 t = 8.3ms reapplied
540 3200 4510 t = 10ms 100% V
500 2920 4120 t = 8.3ms reapplied

(AV)

T

(AV)

T

= 400µs single junction

t

p

= 25oC, from 0.67 V

J

= 500mA,tr < 0.5 µs, tp > 6 µs

g

mA resistive load, gate open circuit

RRM

RRM

< I < π x I

T(AV)

), @ TJ max.

< I < π x I

(AV)

T

), @ TJ max.

DRM

), @ TJ max.

T(AV)

), @ TJ max.

(AV)

T

, I

= π x I

TM

max.

T(AV)

,

2

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54-94-104MT..KB Series

Bulletin I27504 08/97

Blocking

Parameter 54MT.KB 94MT.KB 104MT.KB Units Conditions

V

RMS isolation voltage 4000 V TJ = 25oC all terminal shorted

INS

dv/dt Max. critical rate of rise 500 V/µs T

of off-state voltage (*) gate open circuit

(*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 104MT160KBS90.

Triggering

Parameter 54MT.KB 94MT.KB 104MT.KB Units Conditions

PGMMax. peak gate power 10 W TJ = TJ max.

Max. average gate power 2.5

P

G(AV)

Max. peak gate current 2.5 A

I

GM

Max. peak negative 10 V

-V

GT

gate voltage
Max. required DC gate 4.0 V TJ = - 40°C Anode supply = 6V, resistive load

V

GT

voltage to trigger 2.5 T

1.7 T

Max. required DC gate 270 TJ = - 40°C Anode supply = 6V, resistive load

I

GT

current to trigger 150 mA T

80 T

Max. gate voltage 0.25 V @ TJ = TJ max., rated V

V

GD

that will not trigger
Max. gate current 6 mA

I

GD

that will not trigger

f = 50Hz, t = 1s

= TJ max., linear to 0.67 V

J

= 25°C

J

= 125°C

J

= 25°C

J

= 125°C

J

DRM

DRM

applied

,

Thermal and Mechanical Specifications

Parameter 54MT.KB 94MT.KB 104MT.KB Units Conditions

TJMax. junction operating -40 to 125 °C

temperature range
Max. storage temperature -40 to 125 °C

T

stg

range
Max. thermal resistance, 0.52 0.39 0.34 K/W DC operation per single AC switch

R

thJC

junction to case 1.05 0.77 0.69 DC operation per junction

0.56 0.40 0.36 180° Sine cond. angle per single AC switch

1.12 0.80 0.72 180° Sine cond. angle per junction

Max. thermal resistance, 0.03 K/W Per module

R

thCS

case to heatsink Mounting surface smooth, flat and greased

T Mounting to heatsink 4 to 6 Nm

torque ± 10% to terminal 3 to 4

wt Approximate weight 225 g

A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
Lubricated threads.

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