VISHAY LH1502BAC Technical data

DIP

S1 S1'

S2

i179032

LH1502BAC, LH1502BACTR, LH1502BB

Vishay Semiconductors

Dual 1 Form A/B, C Solid State Relay

FEATURES

SMD

S2'S2S1 S1'

8 76 5

S2'

1234

• Current limit protection

• Isolation test voltage 3750 V

• Typical RON 20 Ω

• Load voltage 350 V

• Load current 150 mA

• High surge capability

• Clean bounce free switching

• Low power consumption

• SMD lead available on tape and reel

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC

RMS

DESCRIPTION

The LH1502 relays contain normally open and normally
closed switches that can be used independently as a 1 form
A and 1 form B relay, or when used together, as a 1 form C
relay. The relays are constructed as a multi-chip hybrid
device. Actuation control is via an infrared LED. The output
switch is a combination of a photodiode array with MOSFET
switches and control circuity.

APPLICATIONS

• General telecom switching

- On/off hook control

- Ring delay

- Dial pulse

- Ground start

- Ground fault protection

• Instrumentation

• Industrial controls

AGENCY APPROVALS

UL1577: file no. E52744 system code H or J, double

CSA: certification 093751

protection

ORDER INFORMATION

PART REMARKS PACKAGE

LH1502BAC Tubes SMD-8

LH1502BACTR Tape and reel SMD-8

LH1502BB Tubes DIP-8

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

SSR

LED continuous forward current I

LED reverse voltage I

DC or peak AC load voltage I

Continuous DC load current
(form C operation)

Peak load current, form A t = 100 ms I

Peak load current (single shot), form B I

(1)

≤ 10 µA V

R

≤ 50 µA V

L

F

R

L

I

L

P

P

50 mA

8.0 V

350 V

150 mA

(4)

350 mA

Document Number: 83806 For technical questions, please contact: [e-mail]
Rev. 1.3, 08-May-08 73

www.vishay.com

LH1502BAC, LH1502BACTR, LH1502BB

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS

Dual 1 Form A/B, C Solid State Relay

(1)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

SSR

Ambient operating temperature range T

Storage temperature range T

Pin soldering temperature

Input to output isolation test voltage t = 1.0 s, I

Pole-to-pole isolation voltage (S1 to S2)

(2)

(3)

,

t = 10 s max. T

= 10 µA max. V

ISo

(dry air, dust free, at sea level)

Output power dissipation (continuous) P

amb

stg

sld

ISO

diss

- 40 to + 85 °C

- 40 to + 125 °C

260 °C

3750 V

RMS

1600 V

600 mW

Notes

(1)

T

= 25 °C, unless otherwise specified.

amb

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.

(2)

Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).

(3)

Breakdown occurs between the output pins external to the package.

(4)

Refer to current limit performance application note for a discussion on relay operation during transient currents.

ELECTRICAL CHARACTERISTICS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

INPUT

LED forward current, switch turn-on (NO) I

LED forward current, switch turn-off (NO) V

LED forward current, switch turn-on (NC) I

LED forward current, switch turn-off (NC) V

LED forward voltage I

OUTPUT

On-resistance (NO, NC)

Off-resistance (NO) I

Off-resistance (NC) I

Current limit (NO) I

Off-state leakage current (NO) I

Off-state leakage current (NC) I

Off-state leakage current (NO, NC)

Output capacitance (NO) I

Output capacitance (NC) I

TRANSFER

Capacitance (input to output) V

Turn-on time (NO)

Turn-on time (NC)

Turn-off time (NO)

Turn-off time (NC)

Note

= 25 °C, unless otherwise specified.

T

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

www.vishay.com For technical questions, please contact: [e-mail]
74 Rev. 1.3, 08-May-08

= 100 mA, t = 10 ms I

L

= ± 300 V I

L

= 300 mA, t = 10 ms I

L

= ± 300 V I

L

= 10 mA V

F

I

= 5.0 mA (NO), IF = 0 mA (NC),

F

I

= 50 mA (NC)

L

= 0 mA, VL = ± 100 V R

F

= 5.0 mA, VL = ± 100 V R

F

= 5.0 mA, t = 5.0 ms, VL = ± 5.0 V I

F

= 0 mA, VL = ± 100 V I

F

= 5.0 mA, VL = ± 100 V I

F

I

= 0 mA (NO), IF = 5.0 mA (NC),

F

V

= ± 200 V

L

= 0 mA, VL = 50 V C

F

= 5.0 mA, VL = 50 V C

F

= 1.0 V C

ISO

I

= 10 mA, IL = 37.5 mA,

F

V

= 150 V

L

I

= 10 mA, IL = 37.5 mA,

F

V

= 150 V

L

I

= 10 mA, IL = 37.5 mA,

F

V

= 150 V

L

I

= 10 mA, IL = 37.5 mA,

F

V

= 150 V

L

R

Fon

Foff

Fon

Foff

ON

OFF

OFF

LMT

O

O

I

O

t

on

t

on

t

off

t

off

0.6 2.0 mA

0.4 0.5 mA

0.2 0.9 mA

1.0 2.0 mA

F

1.15 1.26 1.45 V

12 20 25 Ω

0.35 5000 GΩ

0.1 1.4 GΩ

270 290 380 mA

0.02 1000 nA

0.07 1.0 µA

1.0 µA

O

O

IO

50 pF

50 pF

3.0 pF

0.2 3.2 6.0 ms

0.2 3.8 6.0 ms

1.6 3.0 ms

0.8 3.0 ms

Document Number: 83806

LH1502BAC, LH1502BACTR, LH1502BB

Dual 1 Form A/B, C Solid State Relay

TYPICAL CHARACTERISTICS

T

= 25 °C, unless otherwise specified

amb

150

120

90

60

30

Load Current (mA)

0

Form A

- 40 - 20 0 20 40 60 80

ilh1502bb_00

Ambient Temperature (°C)

Fig. 1 - Recommended Operating Conditions Fig. 2 - Recommended Operating Conditions

PACKAGE DIMENSIONS in inches (millimeters)

DIP

5.0 mA

0.380 (9.65)

0.100 (2.54)

6 to 0.031 (6 to 0.80) dia.

Vishay Semiconductors

150

120

90

50

Load Current (mA)

30

0

Form B

- 40 - 20 0 20 40 60 80

ilh1502bb_01

Ambient Temperature (°C)

0.100 (2.54)

5.0 mA

0.250 (6.35)

i178017

SMD

0.018 (0.46)

0.318 (8.08)

ISO method A

0.380 (9.65)

0.100 (2.54)

0.018 (0.46)

0.318 (8.08)

0.360 (9.14)

0.375 (9.53)0.250 (6.35)

0.250 (6.35)

0.130 (3.30)

0.075 (1.90)

0.300 (7.62)

0.300 (7.62)

0.300 (7.62)

0.285 (7.24) typ.

0.360 (9.14) typ.

0.100 (2.54)

0.327 (8.31)

0.059 (1.50)

0.300 (7.62)

0.130 (3.30)

0.025 (0.64) typ.

0.010 (0.25) typ.

i178018

0.175 (4.45)

ISO method A

Document Number: 83806 For technical questions, please contact: [e-mail]

www.vishay.com

Rev. 1.3, 08-May-08 75

LH1502BAC, LH1502BACTR, LH1502BB

Vishay Semiconductors

Dual 1 Form A/B, C Solid State Relay

OZONE DEPLETING SUBSTANCES POLICY STATEMENT

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the

customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall

indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any

claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

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76 Rev. 1.3, 08-May-08

Document Number: 83806

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1