VISHAY K847PH, K827PH, K817P9, K817P8, K817P6 Datasheet
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K817P/ K827PH/ K847PH
Optocoupler with Phototransistor Output
Description
The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in an 4-lead up to 16-lead
plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Programmable logic controllers, modems, answering
machines, general applications
Features
D
Endstackable to 2.54 mm (0.1’) spacing
D
DC isolation test voltage V
D
Low coupling capacitance of typical 0.3 pF
D
Current Transfer Ratio (CTR) selected into
groups
D
Low temperature coefficient of CTR
D
Wide ambient temperature range
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
CSA (C–UL) 1577 recognized,
file number E-76222 – Double Protection
D
Coupling System U
= 5 kV
IO
Coll. Emitter
Anode Cath.
4 PIN
8 PIN
16 PIN
C
Vishay Telefunken
14925
13929
Order Instruction
Ordering Code CTR Ranking Remarks
K817P 50 to 600% 4 Pin = Single channel
K827PH 50 to 600% 8 Pin = Dual channel
K847PH 50 to 600% 16 Pin = Quad channel
K817P1 40 to 80% 4 Pin = Single channel
K817P2 63 to 125% 4 Pin = Single channel
K817P3 100 to 200% 4 Pin = Single channel
K817P4 160 to 320% 4 Pin = Single channel
K817P5 50 to 150% 4 Pin = Single channel
K817P6 100 to 300% 4 Pin = Single channel
K817P7 80 to 160% 4 Pin = Single channel
K827P8 130 to 260% 4 Pin = Single channel
K817P9 200 to 400% 4 Pin = Single channel
Rev. A2, 11–Jan–99 177
K817P/ K827PH/ K847PH
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Peak collector current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T
Junction temperature T
≤ 25°C P
amb
≤ 25°C P
amb
R
F
FSM
V
CEO
ECO
C
CM
V
6 V
60 mA
1.5 A
100 mW
j
125
°
C
70 V
7 V
50 mA
100 mA
150 mW
j
125
°
C
Coupler
Parameter Test Conditions Symbol V alue Unit
AC isolation test voltage (RMS) t = 1 min VIO
Total power dissipation T
Operating ambient temperature
range
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 10 s T
1)
Related to standard climate 23/50 DIN 50014
≤ 25°C P
amb
T
tot
amb
stg
sd
1)
5 kV
250 mW
–40 to +100
–55 to +125
260
°
C
°
C
°
C
Rev. A2, 11–Jan–99178
K817P/ K827PH/ K847PH
C F
Vishay Telefunken
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA V
Junction capacitance VR = 0 V, f = 1 MHz C
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 100 mA V
Emitter collector voltage IE = 100 mA V
Collector dark current VCE = 20 V, IF = 0, E = 0 I
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter
saturation voltage
Cut-off frequency IF = 10 mA, VCE = 5 V,
Coupling capacitance f = 1 MHz C
IF = 10 mA, IC = 1 mA V
R
L
= 100
W
F
j
CEO
ECO
CEO
CEsat
f
c
k
1.25 1.6 V
50 pF
70 V
7 V
100 nA
0.3 V
100 kHz
0.3 pF
Current Transfer Ratio (CTR)
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/I
F
VCE = 5 V, IF = 5 mA K817P CTR 0.5 6.0
VCE = 5 V, IF = 5 mA K827PH CTR 0.5 6.0
VCE = 5 V, IF = 5 mA K847PH CTR 0.5 6.0
VCE = 5 V, IF = 10 mA K817P1 CTR 0.4 0.8
VCE = 5 V, IF = 10 mA K817P2 CTR 0.63 1.25
VCE = 5 V, IF = 10 mA K817P3 CTR 1.0 2.0
VCE = 5 V, IF = 10 mA K817P4 CTR 1.6 3.2
VCE = 5 V, IF = 5 mA K817P5 CTR 0.5 1.5
VCE = 5 V, IF = 5 mA K817P6 CTR 1.0 3.0
VCE = 5 V, IF = 5 mA K817P7 CTR 0.8 1.6
VCE = 5 V, IF = 5 mA K817P8 CTR 1.3 2.6
VCE = 5 V, IF = 5 mA K817P9 CTR 2.0 4.0
Rev. A2, 11–Jan–99 179
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