Vishay SST308, SST309, SST310, U309, U310 Schematics

N-Channel JFETs

PRODUCT SUMMARY

Part Number V

J308 −1 to −6.5 −25 8 12

J309 −1 to −4 −25 10

J310 −2 to −6.5 −25 8

SST308 −1 to −6.5 −25 8 12

SST309 −1 to −4 −25

SST310 −2 to −6.5 −25 8

U309 −1 to −4 −25

U310 −2.5 to −6 −25

GS(off)

(V) V

Min (V) g

(BR)GSS

Min (mS) I

fs

10 12

10 12

10 24

J/SST/U308 Series

Vishay Siliconix

J308 SST308 U309
J309 SST309 U310
J310 SST310

Min (mA)

DSS

12

24

24

FEATURES BENEFITS APPLICATIONS

D Excellent High Frequency Gain:

Gps 11.5 dB @ 450 MHz

D Very Low Noise: 2.7 dB @ 450 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation

D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification

D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches

DESCRIPTION

The J/SST/U308 series offers superb amplification characteristics.
Of special interest is its high-frequency performance. Even at 450
MHz, this series offers high power gain at low noise.

Low-cost J series TO-226AA (TO-92) packaging supports
automated assembly with tape-and-reel options. The SST series
TO-236 (SOT-23) package provides surface-mount capabilities

D

S

TO-226AA

(TO-92)

1

2

D

S

TO-236

(SOT-23)

1

2

and is available with tape-and-reel options. The U series
hermetically-sealed TO-206AC (TO-52) package supports full
military processing. (See Military and Packaging Information for
further details.)

For similar dual products packaged in the TO-78, see the
U430/431 data sheet.

TO-206AC

(TO-52)

S

3

G

1

G

3

Top View

J308
J309
J310

For applications information see AN104.

Document Number: 70237
S-50149—Rev. H, 24-Jan-05

Top View
SST308 (Z8)*
SST309 (Z9)*
SST310 (Z0)*

*Marking Code for TO-236

23

D

Top View

U309
U310

G and Case

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1

J/SST/U308 Series

VDS = 10 V, ID = 10 mA

Common-Source

DS

Common Source

C

f = 1 MHz

Common-Gate

Common-Gate

VDS = 10 V

dB

Noise Fi

NF

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage −25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate Current : (J/SST Prefixes) 10 mA. . . . . . . . . . . . . . . . . . . .

Lead Temperature (

Storage Temperature : (J/SST Prefixes) −55 to 150_C. . . . . . . . . . . . . .

(U Prefix) 20 mA. . . . . . . . . . . . . . . . . . . . . . . . . .

1

/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .

(U Prefix) −65 to 175_C. . . . . . . . . . . . . . . . . . . .

SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25_C UNLESS NOTED)

Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit

Static

Gate-Source
Breakdown Voltage

Gate-Source Cutoff Voltage V

Saturation Drain Current

Gate Reverse Current I

Gate Operating Current I

Drain-Source On-Resistance r

Gate-Source Forward Voltage V

b

Dynamic

Common-Source
Forward Transconductance

Common-Source
Output Conductance

Common-Source
Input Capacitance

Common-Source
Reverse Transfer Capacitance

Equivalent Input
Noise Voltage

High Frequency

Common-Gate
Forward Transconductance

Common-Gate
Output Conductance

Common-Gate Power Gain

gure

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZB
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (G

) measured at optimum input noise match.

pg

c

V

(BR)GSS

GS(off)

I

DSS

GSS

DS(on)

GS(F)

g

g

C

e

g

g

G

IG = −1 mA , VDS = 0 V

VDS = 10 V, ID = 1 nA −1

VDS = 10 V, VGS = 0 V

VGS = −15 V, VDS = 0 V −0.002 −1 −1 −1 nA

G

fs

os

iss

rss

n

fg

og

pg

VDG = 9 V, ID = 10 mA

VGS = 0 V, ID = 1 mA 35

IG = 10 mA

V

= 0 V

DS

VDS = 10 V, ID = 10 mA

f = 1 kHz

VDS = 10 V

VGS = −10 V

f = 1 MHz

VDS = 10 V, ID = 10 mA

f = 100 Hz

VDS = 10 V

ID = 10 mA

Operating Junction Temperature −55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation : (J/SST Prefixes)

Notes
a. Derate 2.8 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C

(U Prefix)

b

Limits

J/SST308 J/SST309 J/SST310

−35 −25 −25 −25 V

−6.5

−1

TA = 125_C

f = 105 MHz 14

f = 450 MHz 13

f = 105 MHz 0.16

f = 450 MHz 0.55

f = 105 MHz 16

f = 450 MHz 11.5

f = 105 MHz 1.5

f = 450 MHz 2.7

−0.001 −1 −1 −1

−15 pA

J 0.7 1 1 1 V

14

110

J 4 5 5 5

SST 4

J 1.9

SST 1.9

6

12 60

8 10 8

12

250 250 250

2.5 2.5 2.5

a

−4 −2 −6.5 V

30

24

350 mW. . . . . . . . . . . . . . . . .

500 mW. . . . . . . . . . . . . . . . . . . . . . .

60 mA

mA

W

mS

mS

pF

nV⁄

√Hz

mS

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Document Number: 70237

S-50149—Rev. H, 24-Jan-05

SPECIFICATIONS FOR U309 AND U310 (TA = 25_C UNLESS NOTED)

VDS = 10 V, ID = 10 mA

VDS = 10 V, VGS = −10 V

Common-Gate

Common-Gate

VDS = 10 V

d

dB

Noise Fi

d

NF

Parameter Symbol Test Conditions TypaMin Max Min Max Unit

Static

J/SST/U308 Series

Vishay Siliconix

Limits

U309 U310

Gate-Source Breakdown Voltage V

Gate-Source Cutoff Voltage V

Saturation Drain Current

Gate Reverse Current I

Gate Operating Current I

Drain-Source On-Resistance r

Gate-Source Forward Voltage V

b

(BR)GSS

GS(off)

I

DSS

GSS

G

DS(on)

GS(F)

IG = −1 mA , VDS = 0 V

VDS = 10 V, ID = 1 nA −1

VDS = 10 V, VGS = 0 V 12 30 24

VGS = −15 V, VDS = 0 V −0.002

TA = 125_C

VDG = 9 V, ID = 10 mA

VGS = 0 V, ID = 1 mA 35

IG = 10 mA , VDS = 0 V 0.7

−35 −25 −25 V

−4 −2.5 −6 V

60 mA

−0.15 −0.15

−0.001

−15 pA

−0.15 −0.15

1 1

nA

mA

W

V

Dynamic

Common-Source
Forward Transconductance

Common-Source
Output Conductance

Common-Source
Input Capacitance

Common-Source
Reverse Transfer Capacitance

Equivalent Input Noise Voltage e

g

fs

g

os

C

iss

C

rss

n

VDS = 10 V, ID = 10 mA

f = 1 kHz

VDS = 10 V, VGS = −10 V

f = 1 MHz

VDS = 10 V, ID = 10 mA

f = 100 Hz

14

110

4 5 5

1.9

6

10 10

250 250

2.5 2.5

mS

mS

pF

nV⁄

√Hz

High Frequency

Common-Gate
Forward Transconductance

Common-Gate
Output Conductance

Common-Gate Power Gain

d

gure

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZB
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (G
d. Not a production test.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only , and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability .

) measured at optimum input noise match.

pg

c,

g

fg

g

og

G

pg

V

= 10 V

ID = 10 mA

f = 105 MHz 14

f = 450 MHz 13

f = 105 MHz 0.16

f = 450 MHz 0.55

f = 105 MHz 16

f = 450 MHz 11.5

f = 105 MHz 1.5

f = 450 MHz 2.7

mS

14 14

10 10

2 2

3.5 3.5

Document Number: 70237
S-50149—Rev. H, 24-Jan-05

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3