Vishay SSTJ211, SSTJ212, J210, J211, J212 Schematics

PRODUCT SUMMARY

J/SSTJ210 Series

Vishay Siliconix

N-Channel JFETs

J210 SSTJ211
J211 SSTJ212
J212

Part Number V

J210 –1 to –3 –25 4 2
J/SSTJ211 –2.5 to –4.5 –25 6 7
J/SSTJ212 –4 to –6 –25 7 15

GS(off)

(V) V

(BR)GSS

Min (V) gfs Min (mS) I

Min (mA)

DSS

FEATURES BENEFITS APPLICATIONS

D Excellent High Frequency Gain:

J211/212, Gps 12 dB (typ) @ 400 MHz

D Very Low Noise: 3 dB (typ) @

400 MHz

D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: AV = 35 @ 100 mA

D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High-Quality Low-Level Signal

Amplification

D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches

DESCRIPTION

The J/SSTJ210 Series n-channel JFETs are general-purpose
and high-frequency amplifiers for a wide range of applications.
These devices feature low leakage (I

< 100 pA).

GSS

capability. The J/SSTJ210 Series is available in tape-and-reel
for automated assembly (see Packaging Information).

The TO-226AA (TO-92) plastic package, provides low cost
while the TO-236 (SOT-23) package provides surface-mount

TO-226AA

(TO-92)

D

S

G

For applications information see AN104.

Document Number: 70234
S-04028—Rev. E, 04-Jun-01

1

2

3

Top View

J210
J211
J212

For similar dual products, see the 2N5911/5912 and U440/441
data sheets.

TO-236

(SOT-23)

1

D

3

G

S

2

Top View

SSTJ211 ( Z 1 ) *
SSTJ212 (Z2)*

*Marking Code for TO-236

www.vishay.com

7-1

J/SSTJ210 Series

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .

Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation

Notes
a. Derate 2.8 mW/_C above 25_C

a

350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

J210 J/SSTJ211 J/SSTJ212

Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit

Static

Gate-Source
Breakdown Voltage

Gate-Source Cutoff Voltage V
Saturation Drain Current

Gate Reverse Current I

Gate Operating Current
Drain Cutoff Current I
Gate-Source Forward Voltage V

b

a

Dynamic

Common-Source
Forward Transconductance

Common-Source
Output Conductance

Common-Source
Input Capacitance

Common-Source
Reverse Transfer Capacitance

Equivalent Input Noise Voltage e

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZF
b. Pulse test: PW v300 ms duty cycle v3%.

b

V

(BR)GSS

GS(off)

I

DSS

GSS

D(off)

GS(F)

g

C

C

IG = –1 mA , VDS = 0 V

VDS = 15 V, ID = 1 nA

VDS = 15 V, VGS = 0 V

VGS = –15 V, VDS = 0 V –1

TA = 125_C

I

G

g

fs

os

iss

rss

n

VDG = 10 V, ID = 1 mA –1

VDS = 10 V, VGS = –8 V 1

IG = 1 mA , VDS = 0 V 0.7 V

VDS = 15 V, VGS = 0 V

VDS = 15 V, VGS = 0 V

f = 1 kHz

VDS = 15 V, VGS = 0 V

VDS = 15 V, VGS = 0 V

f = 1 MHz

VDS = 15 V, VGS = 0 V

f = 1 kHz

–35

–25 –25 –25

–1 –3 –2.5 –4.5 –4 –6

15

2

–100 –100 –100

–0.5 nA

12

4

150 200 200

4

1.5

5

20

7

12

6

15

7

40 mA

pA

pA

12 mS

mS

pF

nV⁄

√Hz

V

V

www.vishay.com

7-2

Document Number: 70234

S-04028—Rev. E, 04-Jun-01

J/SSTJ210 Series

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance

vs. Gate-Source Cutoff Voltage

50

I

@ VDS = 10 V, VGS = 0 V

DSS

g

@ V

= 10 V, V

DS

fs

f = 1 kHz

40

30

20

– Saturation Drain Current (mA)

10

DSS

I

0

g

fs

I

DSS

0 –10–8–2

V

– Gate-Source Cutoff Voltage (V)

GS(off

)

= 0 V

GS

–4 –6

20

g

fs

– Forward Transconductance (mS)

16

12

8

4

0

100 nA

10 nA

1 nA

100 pA

– Gate Leakage

10 pA

G

I

1 pA

0.1 pA

I

G(on)

TA = 125_C

I

GSS

TA = 25_C

0 4 16 20812

Gate Leakage Current

@ I

D

@ 125_C

VDG – Drain-Gate Voltage (V)

Vishay Siliconix

10 mA

1 mA

I

GSS

1 mA

@ 25_C

10 mA

On-Resistance and Output Conductance

vs. Gate-Source Cutoff Voltage

200

g

os

160

120

80 80

r

DS

– Drain-Source On-Resistance ( Ω )

40

DS(on)

r

r

@ I

= 1 mA, VGS = 0 V

DS

D

g

@ VDS = 10 V, VGS = 0 V

os

f = 1 kHz

0

0 –10–8–2

V

GS(off)

–4 –6

– Gate-Source Cutoff Voltage (V)

Output Characteristics

5

V

= –2 V

GS(off)

4

3

2

– Drain Current (µA)

D

I

1

VGS= 0 V

–0.2 V

–0.4 V

–0.6 V

–0.8 V

–1.0 V
–1.2 V

200

160

120

40

0

Common-Source Forward Transconductance

vs. Drain Current

10

V

= –5 V VDS = 10 V

GS(off)

g

os

– Output Conductance (mS)

8

6

25_C

4

– Forward Transconductance (mS)

2

fs

g

0

0.1

110

ID – Drain Current (mA)

15

Output Characteristics

V

= –5 V

GS(off)

12

9

–1.0 V

–1.5 V

–2.0 V

6

– Drain Current (mA)

D

I

3

f = 1 kHz

TA = –55_C

125_C

VGS= 0 V

–0.5 V

–2.5 V
–3.0 V

–3.5 V

0

0 0.2 0.8 1

Document Number: 70234
S-04028—Rev. E, 04-Jun-01

0.4 0.6

VDS – Drain-Source Voltage (V)

0

0 0.2 0.8 1

0.4 0.6

V

– Drain-Source Voltage (V)

DS

www.vishay.com

7-3