PRODUCT SUMMARY
J/SSTJ210 Series
Vishay Siliconix
N-Channel JFETs
J210 SSTJ211
J211 SSTJ212
J212
Part Number V
J210 –1 to –3 –25 4 2
J/SSTJ211 –2.5 to –4.5 –25 6 7
J/SSTJ212 –4 to –6 –25 7 15
GS(off)
(V) V
(BR)GSS
Min (V) gfs Min (mS) I
Min (mA)
DSS
FEATURES BENEFITS APPLICATIONS
D Excellent High Frequency Gain:
J211/212, Gps 12 dB (typ) @ 400 MHz
D Very Low Noise: 3 dB (typ) @
400 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: AV = 35 @ 100 mA
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High-Quality Low-Level Signal
Amplification
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
DESCRIPTION
The J/SSTJ210 Series n-channel JFETs are general-purpose
and high-frequency amplifiers for a wide range of applications.
These devices feature low leakage (I
< 100 pA).
GSS
capability. The J/SSTJ210 Series is available in tape-and-reel
for automated assembly (see Packaging Information).
The TO-226AA (TO-92) plastic package, provides low cost
while the TO-236 (SOT-23) package provides surface-mount
TO-226AA
(TO-92)
D
S
G
For applications information see AN104.
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
1
2
3
Top View
J210
J211
J212
For similar dual products, see the 2N5911/5912 and U440/441
data sheets.
TO-236
(SOT-23)
1
D
3
G
S
2
Top View
SSTJ211 ( Z 1 ) *
SSTJ212 (Z2)*
*Marking Code for TO-236
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7-1
J/SSTJ210 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
Notes
a. Derate 2.8 mW/_C above 25_C
a
350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J210 J/SSTJ211 J/SSTJ212
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage V
Saturation Drain Current
Gate Reverse Current I
Gate Operating Current
Drain Cutoff Current I
Gate-Source Forward Voltage V
b
a
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage e
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZF
b. Pulse test: PW v300 ms duty cycle v3%.
b
V
(BR)GSS
GS(off)
I
DSS
GSS
D(off)
GS(F)
g
C
C
IG = –1 mA , VDS = 0 V
VDS = 15 V, ID = 1 nA
VDS = 15 V, VGS = 0 V
VGS = –15 V, VDS = 0 V –1
TA = 125_C
I
G
g
fs
os
iss
rss
n
VDG = 10 V, ID = 1 mA –1
VDS = 10 V, VGS = –8 V 1
IG = 1 mA , VDS = 0 V 0.7 V
VDS = 15 V, VGS = 0 V
VDS = 15 V, VGS = 0 V
f = 1 kHz
VDS = 15 V, VGS = 0 V
VDS = 15 V, VGS = 0 V
f = 1 MHz
VDS = 15 V, VGS = 0 V
f = 1 kHz
–35
–25 –25 –25
–1 –3 –2.5 –4.5 –4 –6
15
2
–100 –100 –100
–0.5 nA
12
4
150 200 200
4
1.5
5
20
7
12
6
15
7
40 mA
pA
pA
12 mS
mS
pF
nV⁄
√Hz
V
V
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7-2
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
J/SSTJ210 Series
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
50
I
@ VDS = 10 V, VGS = 0 V
DSS
g
@ V
= 10 V, V
DS
fs
f = 1 kHz
40
30
20
– Saturation Drain Current (mA)
10
DSS
I
0
g
fs
I
DSS
0 –10–8–2
V
– Gate-Source Cutoff Voltage (V)
GS(off
)
= 0 V
GS
–4 –6
20
g
fs
– Forward Transconductance (mS)
16
12
8
4
0
100 nA
10 nA
1 nA
100 pA
– Gate Leakage
10 pA
G
I
1 pA
0.1 pA
I
G(on)
TA = 125_C
I
GSS
TA = 25_C
0 4 16 20812
Gate Leakage Current
@ I
D
@ 125_C
VDG – Drain-Gate Voltage (V)
Vishay Siliconix
10 mA
1 mA
I
GSS
1 mA
@ 25_C
10 mA
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
200
g
os
160
120
80 80
r
DS
– Drain-Source On-Resistance ( Ω )
40
DS(on)
r
r
@ I
= 1 mA, VGS = 0 V
DS
D
g
@ VDS = 10 V, VGS = 0 V
os
f = 1 kHz
0
0 –10–8–2
V
GS(off)
–4 –6
– Gate-Source Cutoff Voltage (V)
Output Characteristics
5
V
= –2 V
GS(off)
4
3
2
– Drain Current (µA)
D
I
1
VGS= 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
200
160
120
40
0
Common-Source Forward Transconductance
vs. Drain Current
10
V
= –5 V VDS = 10 V
GS(off)
g
os
– Output Conductance (mS)
8
6
25_C
4
– Forward Transconductance (mS)
2
fs
g
0
0.1
110
ID – Drain Current (mA)
15
Output Characteristics
V
= –5 V
GS(off)
12
9
–1.0 V
–1.5 V
–2.0 V
6
– Drain Current (mA)
D
I
3
f = 1 kHz
TA = –55_C
125_C
VGS= 0 V
–0.5 V
–2.5 V
–3.0 V
–3.5 V
0
0 0.2 0.8 1
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
0.4 0.6
VDS – Drain-Source Voltage (V)
0
0 0.2 0.8 1
0.4 0.6
V
– Drain-Source Voltage (V)
DS
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7-3
J/SSTJ210 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10
V
= –2 V
GS(off)
8
6
4
– Drain Current (mA)
D
I
2
0
068210
4
VDS – Drain-Source Voltage (V)
VGS= 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
Transfer Characteristics
10
V
Output Characteristics
8
6
= –2 V
GS(off)
TA = –55_C
25_C
VDS = 10 V VDS = 10 V
30
VGS= 0 V
24
18
12
– Drain Current (mA)
D
I
6
V
= –5 V
0
08210
VDS – Drain-Source Voltage (V)
GS(off)
46
–0.5 V
–1.0 V
–1.5 V
–2.0 V
–2.5 V
–3.0 V
–3.5 V
Transfer Characteristics
30
V
= –5 V
GS(off)
24
TA = –55_C
Output Characteristics
18
25_C
4
– Drain Current (mA)
D
I
– Forward Transconductance (mS)
fs
g
125_C
2
0
0 –0.4 –1.6 –2
Transconductance vs. Gate-Source Voltage
10
V
= –2 V
GS(off)
8
6
4
2
0
TA = –55_C
125_C
0 –1.2 –1.6–0.4 –2
–0.8 –1.2
VGS – Gate-Source Voltage (V)
25_C
–0.8
VGS – Gate-Source Voltage (V)
VDS = 10 V
f = 1 kHz
12
– Drain Current (mA)
D
I
6
0
0 –4 –5–1
125_C
Transconductance vs. Gate-Source Voltage
10
8
6
4
2
– Forward Transconductance (mS)
fs
g
0
25_C
VDS = 10 V
f = 1 kHz
–2 –3
VGS – Gate-Source Voltage (V)
V
= –5 V
GS(off)
TA = –55_C
125_C
–2 –3
VGS – Gate-Source Voltage (V)
–5–4–10
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7-4
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
J/SSTJ210 Series
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
– Drain-Source On-Resistance ( Ω )
DS(on)
r
200
160
120
On-Resistance vs. Drain Current
V
= –2 V
GS(off)
V
= –5 V
80
40
0
GS(off)
– Voltage Gain
V
A
TA = 25_C
ID – Drain Current (mA) ID – Drain Current (mA)
Circuit Voltage Gain vs. Drain Current
50
A
V
40
Assume VDD = 15 V, VDS = 5 V
R
L
30
20
V
GS(off)
10
0
Vishay Siliconix
g
R
L
fs
+
1 ) RLg
+
= –5 V
10 V
I
D
1100.11 10 100
os
V
= –2 V
GS(off)
– Input Capacitance (pF)C
iss
10
8
6
4
2
0
100
10
Common-Source Input Capacitance
vs. Gate-Source Voltage
f = 1 MHz
V
= 5 V
DS
VDS = 0 V
0 –16 –20–4
–8 –12 –8
V
– Gate-Source Voltage (V)
GS
Input Admittance
TA = 25_C
V
= 10 V
DS
I
= 10 mA
D
g
ig
VDS = 10 V
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
5
f = 1 MHz
4
3
V
= 5 V
DS
2
1
– Reverse Feedback Capacitance (pF)
rss
C
VDS = 0 V
VDS = 10 V
0
0 –12 –20–16–4
V
– Gate-Source Voltage (V)
GS
Forward Admittance
100
TA = 25_C
V
= 10 V
DS
I
= 10 mA
D
10
b
(mS)
is
1
b
ig
g
is
0.1
100 1000
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
200 500
f – Frequency (MHz)
(mS)
–b
fs
b
fg
1
0.1
100 1000
200 500
f – Frequency (MHz)
–g
fg
g
fs
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7-5
J/SSTJ210 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10
Reverse Admittance
TA = 25_C
V
= 10 V
DS
I
= 10 mA
D
–b
rs
1
(mS)
0.1
0.01
100 1000
Equivalent Input Noise Voltage vs. Frequency
50
VDS = 10 V
40
30
20
en – Noise Voltage nV/ Hz
10
–b
rg
–g
rs
–g
rg
g
rg
200 500 200 500
f – Frequency (MHz)
ID = 1 mA
ID = 10 mA
100
T
= 25_C
A
V
= 10 V
DS
I
= 10 mA
D
Output Admittance
10
(mS)
b
b
og,
os
1
g
g
og,
os
0.1
100 1000
f – Frequency (MHz)
Output Conductance vs. Drain Current
150
V
GS(off)
= –5 V
VDS = 10 V
f = 1 kHz
120
TA = –55_C
90
25_C
60
– Output Conductance (µS)
os
g
30
125_C
0
10 100 1 k 100 k10 k
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7-6
f – Frequency (Hz)
0
0.1 1 10
– Drain Current (mA)
I
D
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
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