PRODUCT SUMMARY
J/SST201 Series
Vishay Siliconix
N-Channel JFETs
J201 SST201
J202 SST202
J204 SST204
Part Number V
J/SST201 −0.3 to −1.5 −40 0.5 0.2
J/SST202 −0.8 to −4 −40 1 0.9
J/SST204 −0.3 to −2 −25 0.5 0.2
GS(off)
(V) V
(BR)GSS
Min (V) g
Min (mS) I
fs
Min (mA)
DSS
FEATURES BENEFITS APPLICATIONS
D Low Cutoff Voltage: J201 <1.5 V
D High Input Impedance
D Very Low Noise
D High Gain: A
= 80 @ 20 mA
V
D Full Performance from Low Voltage
Power Supply: Down to 1.5 V
D Low Signal Loss/System Error
D High System Sensitivity
D High Quality Low-Level Signal
Amplification
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Infrared Detector Amplifiers
D Ultra High Input Impedance
Pre-Amplifiers
DESCRIPTION
The J/SST201 series features low leakage, very low noise,
and low cutoff voltage for use with low-level power supplies.
The J/SST201 is excellent for battery powered equipment and
low current amplifiers.
The J series, TO-226 (TO-92) plastic package, provides low
cost, while the SST series, TO-236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA (TO-18) packaging, see the
2N4338/4339/4340/4341 data sheet.
For applications information see AN102 and AN106.
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
D
S
G
TO-226AA
(TO-92)
1
2
3
Top View
J201
J202
J204
TO-236
(SOT-23)
1
D
S
2
Top View
SST201 (P1)*
SST202 (P2)*
SST204 (P4)*
*Marking Code for TO-236
G
3
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1
J/SST201 Series
V
VDS = 15 V, VGS = 0 V
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage −40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
Storage Temperature −55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Operating Junction Temperature −55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
Notes
a. Derate 2.8 mW/_C above 25_C
a
350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST201 J/SST202
J/SST204
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage V
Saturation Drain Current
Gate Reverse Current I
Gate Operating Current I
Drain Cutoff Current I
Gate-Source Forward Voltage V
b
V
(BR)GSS
GS(off)
I
DSS
GSS
D(off)
GS(F)
IG = −1 mA , VDS = 0 V
VDS = 15 V, ID = 10 nA −0.3 −1.5 −0.8 −4 −0.3 −2
VDS = 15 V, VGS = 0 V 0.2 1 0.9 4.5 0.2 3 mA
VGS = −20 V, VDS = 0 V −2 −100 −100 −100 pA
TA = 125_C
G
VDG = 10 V, ID = 0.1 mA −2
VDS = 15 V, VGS = −5 V 2
IG = 1 mA , VDS = 0 V 0.7 V
−40 −40 −25
−1 nA
Dynamic
Common-Source
Forward Transconductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage e
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NPA, NH
b. Pulse test: PW v300 ms duty cycle v3%.
c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves.
g
fs
C
iss
C
rss
n
VDS = 15 V, VGS = 0 V
f = 1 kHz
VDS = 15 V, VGS = 0 V
f = 1 MHz
VDS = 10 V, VGS = 0 V
f = 1 kHz
0.5 1 0.5 mS
4.5
1.3
6
c
V
pA
pF
nV⁄
√Hz
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Document Number: 70233
S-40393—Rev. G, 15-Mar-04
J/SST201 Series
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
10
8
vs. Gate-Source Cutoff Voltage
I
@ VDS = 10 V, VGS = 0 V
DSS
@ VDS = 10 V, VGS = 0 V
g
fs
f = 1 kHz
6
g
fs
4
− Saturation Drain Current (mA)
2
DSS
I
I
DSS
5
g
fs
− Forward Transconductance (mS)
4
3
2
1
10 nA
1 nA
100 pA
10 pA
− Gate Leakage (A)
G
I
TA = 25_C
1 pA
Gate Leakage Current
TA = 125_C
Vishay Siliconix
IG @ ID = 500 mA
ID = 100 mA
I
@ 125_C
GSS
ID = 500 mA
ID = 100 mA
I
@ 25_C
GSS
− Drain-Source On-Resistance ( Ω )
r
− Drain Current (mA)
I
DS(on)
D
0
1500
1200
900
600
300
400
360
240
160
80
0 −5−4−3−2−1
V
− Gate-Source Cutoff Voltage (V)
GS(off)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
g
os
r
DS
rDS @ ID = 100 mA, VGS = 0 V
@ VDS = 10 V, VGS = 0 V, f = 1 kHz
g
os
0
0 −3 −5−4−2−1
− Gate-Source Cutoff Voltage (V)
GS(off)
Output Characteristics
V
= −0.7 V
GS(off)
−0.5 V
VGS = 0 V
−0.1 V
−0.2 V
−0.3 V
−0.4 V
0
0.1 pA
10
g
os
8
− Output Conductance (mS)
6 1.2
4
2
− Forward Transconductance (mS)
fs
g
0
− Drain Current (mA)
D
I
01530
V
− Drain-Gate Voltage (V)
DG
Common-Source Forward Transconductance
2
V
GS(off)
1.6
0.8
0.4
0
0.01 0.1 1
vs. Drain Current
= −1.5 V
ID − Drain Current (mA)V
25_C
VDS = 10 V
f = 1 kHz
TA = −55_C
125_C
Output Characteristics
2
V
= −1.5 V
GS(off)
1.6
1.2
0.8
0.4
−1.2 V
VGS= 0 V
−0.3 V
−0.6 V
−0.9 V
0
01216420
V
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
8
− Drain-Source Voltage (V)
DS
0
012168420
VDS − Drain-Source Voltage (V)
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3
J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
500
400
Transfer Characteristics
= −0.7 V
GS(off)
2
VDS = 10 VV
1.6
Transfer Characteristics
= −1.5 V
GS(off)
VDS = 10 VV
TA = −55_C
300
TA = −55_C
1.2
25_C
25_C
200
− Drain Current (mA)
D
I
125_C
100
0
0 −0.3−0.2−0.1 −0.4 −0.5
VGS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
1.5
VDS = 10 V
f = 1 kHz
1.2
V
GS(off)
= −0.7 V
0.8
− Drain Current (mA)
D
0.4
125_C
0
0 −1.2 −1.6 −2−0.8−0.4
Transconductance vs. Gate-Source Voltage
4
V
GS(off)
3.2
VGS − Gate-Source Voltage (V)
= −1.5 V
VDS = 10 V
f = 1 kHz
TA = −55_C
0.9
25_C
2.4
TA = −55_C
0.6
− Forward Transconductance (mS)
0.3
fs
g
0
0 −0.3 −0.4−0.2−0.1 −0.5
200
Circuit Voltage Gain vs. Drain Current
AV+
160
120
− Voltage Gain
V
A
Assume VDD = 15 V, VDS = 5 V
R
L
80
40
0
125_C
− Gate-Source Voltage (V)
V
GS
g
fsRL
1 ) RLg
+
10 V
I
D
os
−1.5 V
0.1 10.01
− Drain Current (mA)
I
D
V
GS(off)
= −0.7 V
1.6
0.8
− Forward Transconductance (mS)r
fs
g
125_C
25_C
0
−1.2 −2−1.6−0.8−0.40
− Gate-Source Voltage (V)
V
GS
2000
On-Resistance vs. Drain Current
1600
V
= −0.7 V
1200
GS(off)
800
−1.5 V
− Drain-Source On-Resistance ( Ω ) I
400
DS(on)
0
0.01 0.1 1
ID − Drain Current (mA)
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Document Number: 70233
S-40393—Rev. G, 15-Mar-04
J/SST201 Series
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
10
vs. Gate-Source Voltage
f = 1 MHz
Common-Source Reverse Feedback Capacitance
5
vs. Gate-Source Voltage
f = 1 MHz
Vishay Siliconix
8
6
VDS = 0 V
4
− Input Capacitance (pF)
iss
C
− Output Conductance (µS)
os
g
10 V
2
0
0 −12 −16 −20−8−4
Output Conductance vs. Drain Current
3
V
GS(off)
2.4
1.8
0.8
0.4
V
− Gate-Source Voltage (V)
GS
= −1.5 V
25_C
VDS = 10 V
f = 1 kHz
TA = −55_C
125_C
4
3
VDS = 0 V
2
1
− Reverse Feedback Capacitance (pF)
rss
C
0
0 −12 −20−16−8−4
Equivalent Input Noise Voltage vs. Frequency
20
VDS = 10 V
16
12
8
en − Noise Voltage nV / Hz
4
10 V
VGS − Gate-Source Voltage (V)
ID @ 100 mA
VGS = 0 V
0
0.01 0.1 1
300
V
= −0.7 V
GS(off)
240
180
120
− Drain Current (µA)
D
I
60
0
0 0.5
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
0.1 0.2 0.3 0.4
V
ID − Drain Current (mA)
Output Characteristics
−0.5
− Drain-Source Voltage (V)
DS
VGS = 0 V
−0.1
−0.2
−0.3
−0.4
0
10 100 1 k 100 k10 k
f − Frequency (Hz)
1.0
V
0.8
0.6
0.4
− Drain Current (mA)
D
I
0.2
0
0 1.0
Output Characteristics
= −1.5 V
GS(off)
VGS = 0 V
−0.3
−0.6
−0.9
−1.2
0.2 0.4 0.6 0.8
V
− Drain-Source Voltage (V)
DS
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