Vishay SST174, SST175, SST176, SST177, J174 Schematics
...
J/SST174/175/176/177 Series
Vishay Siliconix
P-Channel JFETs
J174 SST174
J175 SST175
J176 SST176
J177 SST177
PRODUCT SUMMARY
Part Number V
J/SST174 5 to 10 85 –10 25
J/SST175 3 to 6 125 –10 25
J/SST176 1 to 4 250 –10 25
J/SST177 0.8 to 2.25 300 –10 25
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: J174 <85 W
D Fast Switching—tON: 25 ns
D Low Leakage: –10 pA
D Low Capacitance: 5 pF
D Low Insertion Loss
GS(off)
(V)
r
DS(on)
I
Max (W)
Typ (pA) tON Typ (ns)
D(off)
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response
D Eliminates Additional Buffering
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
DESCRIPTION
The J/SST174 series consists of p-channel analog switches
designed to provide low on-resistance and fast switching. This
series simplifies series-shunt switching applications when
combined with the Siliconix J/SST111 series.
TO-226AA
(TO-92)
D
G
S
For applications information see AN104.
1
2
3
Top View
J174
J175
J176
J177
The TO-226AA (TO-92) plastic package provides a low-cost
option, while the TO-236 (SOT-23) package provides
surface-mount capability. Both the J and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
TO-236
(SOT-23)
1
D
3
G
2
S
Top View
SST174 (S4)*
SST175 (S5)*
SST176 (S6)*
SST177 (S7)*
*Marking Code for TO-236
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-1
J/SST174/175/176/177 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current –50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
SPECIFICATIONS FOR J/SST174 AND J/SST175 (T
Lead Temperature (
Power Dissipation
Notes
a. Derate 2.8 mW/_C above 25_C
= 25_C UNLESS OTHERWISE NOTED)
A
1
/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
a
350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Limits
J/SST174 J/SST175
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V
Gate-Source Cutoff Voltage V
Saturation Drain Current
Gate Reverse Current I
Gate Operating Current I
Drain Cutoff Current I
Drain-Source On-Resistance r
Gate-Source Forward Voltage V
b
(BR)GSS
GS(off)
I
DSS
GSS
G
D(off)
DS(on)
GS(F)
IG = 1 mA , VDS = 0 V
VDS = –15 V, ID = –10 nA 5 10 3 6
VDS = –15 V, VGS = 0 V –20 –135 –7 –70 mA
VGS = 20 V, VDS = 0 V 0.01 1 1
TA = 125_C
VDG = –15 V, ID = –1 mA 0.01
VDS = –15 V, VGS = 10 V –0.01 –1 –1
TA = 125_C
VGS = 0 V, VDS = –0.1 V 85 125
IG = –1 mA , VDS = 0 V –0.7 V
45 30 30
5
–5
V
nA
W
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source On-Resistance r
Common-Source Input Capacitance C
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage e
g
fs
g
os
ds(on)
iss
C
rss
n
VDS = –15 V, ID = –1 mA
VDS = –15 V, ID = –1 mA
f = 1 kHz
VGS = 0 V, ID = 0 mA , f = 1 kHz 85 125
VDS = 0 V, VGS = 0 V, f = 1 MHz 20
VDS = 0 V, VGS = 10 V
f = 1 MHz
VDG = –10 V, ID = –1 mA
f = 1 kHz
4.5 mS
20
5
20
mS
W
pF
nV⁄
√Hz
Switching
t
Turn-On Time
Turn-Off Time
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. PSCIA
b. Pulse test: PW v300 ms duty cycle v3%.
d(on)
t
d(off)
t
r
t
f
V
= 0 V, V
GS(L)
GS(L) GS(H)
See Switching Circuit
GS(H)
= 10 V
10
15
10
20
ns
www.vishay.com
9-2
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
J/SST174/175/176/177 Series
Vishay Siliconix
SPECIFICATIONS FOR J/SST176 AND J/SST177 (T
= 25_C UNLESS OTHERWISE NOTED)
A
Limits
J/SST176 J/SST177
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V
Gate-Source Cutoff Voltage V
Saturation Drain Current
Gate Reverse Current I
Gate Operating Current I
Drain Cutoff Current I
Drain-Source On-Resistance r
Gate-Source Forward Voltage V
b
(BR)GSS
GS(off)
I
DSS
GSS
G
D(off)
DS(on)
GS(F)
IG = 1 mA , VDS = 0 V
VDS = –15 V, ID = –10 nA 1 4 0.8 2.25
VDS = –15 V, VGS = 0 V –2 –35 –1.5 –20 mA
VGS = 20 V, VDS = 0 V 0.01 1 1
TA = 125_C
VDG = –15 V, ID = –1 mA 0.01
VDS = –15 V, VGS = 10 V –0.01 –1 –1
TA = 125_C
VGS = 0 V, VDS = –0.1 V 250 300
IG = –1 mA , VDS = 0 V –0.7 V
45 30 30
5
–5
V
nA
W
Dynamic
Common-Source
Forward Transconductance
Common-Source Output Conductance g
Drain-Source On-Resistance r
Common-Source Input Capacitance C
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage e
g
fs
os
ds(on)
iss
C
rss
n
VDS = –15 V, ID = –1 mA
f = 1 kHz
VGS = 0 V, ID = 0 mA , f = 1 kHz 250 300
VDS = 0 V, VGS = 0 V, f = 1 MHz 20
VDS = 0 V, VGS = 10 V
f = 1 MHz
VDG = –10 V, ID = –1 mA
f = 1 kHz
4.5 mS
20
5
20
mS
W
pF
nV⁄
√Hz
Switching
t
Turn-On Time
Turn-Off Time
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. PSCIA
b. Pulse test: PW v300 ms duty cycle v3%.
d(on)
t
d(off)
t
r
t
f
V
= 0 V, V
GS(L)
GS(L) GS(H)
See Switching Circuit
GS(H)
= 10 V
10
15
10
20
ns
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-3
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